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    • 3. 发明授权
    • Cleaning apparatus
    • 清洁装置
    • US5685039A
    • 1997-11-11
    • US644811
    • 1996-05-10
    • Tomoko HamadaMitiaki MatsushitaKiyohisa TateyamaAkira Yonemizu
    • Tomoko HamadaMitiaki MatsushitaKiyohisa TateyamaAkira Yonemizu
    • A46B13/04
    • H01L21/67046A46B13/04
    • A cleaning apparatus includes a spin chuck for holding and rotating a wafer, a brush for rubbing the surface of the wafer, and an arm for supporting the brush. A support is coupled to the arm through a linear guide. The arm and the support moves together in a horizontal direction and can relatively displace in a vertical direction. A compression spring is arranged between the arm and the support and deformed in accordance with a relative displacement of the arm and the support in the vertical direction. When the brush contacts the wafer held by the spin chuck, a biasing force of the brush against the wafer is generated in correspondence with deformation of the compression spring. The biasing force of the brush is set by adjusting the downward moving amount of the support in the vertical direction.
    • 清洁装置包括用于保持和旋转晶片的旋转卡盘,用于摩擦晶片表面的刷子和用于支撑刷子的臂。 支撑件通过线性引导件与臂连接。 臂和支撑件在水平方向上一起移动并且可以在垂直方向上相对移位。 压缩弹簧布置在臂和支撑件之间,并且根据臂和支撑件在垂直方向上的相对位移而变形。 当电刷接触由旋转卡盘保持的晶片时,与压缩弹簧的变形相对应地产生刷对着晶片的偏置力。 通过调节支撑件在垂直方向上的向下移动量来设定刷子的偏置力。
    • 5. 发明授权
    • Processing apparatus
    • 处理装置
    • US06178580B2
    • 2001-01-30
    • US09299628
    • 1999-04-27
    • Akira IshiharaKazuyoshi NambaAkira YonemizuTakanori Miyazaki
    • Akira IshiharaKazuyoshi NambaAkira YonemizuTakanori Miyazaki
    • A46B1304
    • H01L21/67046
    • A drive unit 42 for driving a brush 8 is provided on a tip of a rotatable arm 26. The drive unit 42 includes a motor 61 for driving the processing member 24 having a brush 58 for rotation and an adjustment mechanism 45 for adjusting a force to urge the processing member 24 against a wafer W. With no intermediary of a flexible transmitting means, such as a belt, the processing member 24 is securely joined to the motor 61 through a shaft 55 and driven by the motor 61 directly. The adjustment mechanism 45 is constituted by an electromagnetic actuator which includes a stationary element 46 and a movable element 48 capable of elevating along the stationary element 46. The motor 61 is coupled to the armature 48. The adjustment mechanism 45 controls the position of the processing member 24 with respect to the upward and downward direction as well as the force to urge the processing member 24 against a wafer W.
    • 用于驱动刷子8的驱动单元42设置在可旋转臂26的尖端上。驱动单元42包括用于驱动具有用于旋转的刷子58的处理构件24的马达61和用于调节力的调节机构45 将加工构件24推向晶片W.在没有诸如带之类的柔性传输装置的介质的情况下,处理构件24通过轴55牢固地接合到马达61,并由马达61直接驱动。 调节机构45由电磁致动器构成,电磁致动器包括固定元件46和能够沿着固定元件46升高的可移动元件48.马达61联接到电枢48.调节机构45控制处理的位置 构件24相对于向上和向下方向以及将处理构件24推向晶片W的力。
    • 6. 发明授权
    • Scrub washing method
    • 擦洗方法
    • US06491760B2
    • 2002-12-10
    • US09892090
    • 2001-06-26
    • Akira IshiharaAkira YonemizuTakanori Miyazaki
    • Akira IshiharaAkira YonemizuTakanori Miyazaki
    • B08B102
    • H01L21/67051B08B1/04G05G1/08H01L21/67046Y10S134/902
    • A scrub washing apparatus comprises a spin chuck for holding a substrate to be processed substantially horizontally, a nozzle for supplying a washing liquid to the substrate mounted on the spin chuck, an arm vertically and horizontally movably supported, an output shaft provided at the arm, a sponge brush connected directly or indirectly to the output shaft, for scrubbing the substrate on the spin chuck in contact therewith, a press mechanism moving the sponge brush downward together with the output shaft, for pressing the sponge brush against the substrate on the spin chuck, and a rotation drive mechanism provided above the press mechanism at a position where the rotation drive mechanism is capable of being engaged with the output shaft, for directly rotating the sponge brush by engaging with the output shaft.
    • 擦洗洗涤装置包括:旋转卡盘,用于保持大致水平的待处理基板;喷嘴,用于将洗涤液供给到安装在旋转卡盘上的基板;水平移动支撑的支臂;设置在该臂上的输出轴; 直接或间接连接到输出轴的海绵刷,用于擦拭与其接触的旋转卡盘上的基底;压力机构,与输出轴一起向下移动海绵刷,用于将海绵刷压在旋转卡盘上的基底上 以及旋转驱动机构,其设置在所述按压机构的上方的旋转驱动机构能够与所述输出轴接合的位置,以通过与所述输出轴接合来直接旋转所述海绵刷。
    • 7. 发明授权
    • Method for wet etching of thin film
    • 湿法蚀刻薄膜的方法
    • US06096233A
    • 2000-08-01
    • US935837
    • 1997-09-23
    • Hiroki TaniyamaMiyako YamasakaHiroyuki KudouAkira Yonemizu
    • Hiroki TaniyamaMiyako YamasakaHiroyuki KudouAkira Yonemizu
    • H01L21/00H01L21/66H01L21/302
    • H01L21/6708H01L22/26
    • The present invention provides a wet etching method applied to a thin, including the steps of (a) setting in advance an etching rate of said thin film in view of a kind of the thin film to be etched, components of said etchant solution, and temperature, (b) loading the substrate on a spin chuck such that the surface having the thin film formed thereon faces upward and, (c) detecting a thickness of the thin film in at least a peripheral portion and a central portion of the substrate. The method also includes the steps (d) calculating moving speeds of a nozzle at predetermined passing points of said nozzle on the basis of the etching rate set in step (a) and a film thickness detected in the step (c), (e) rotating the substrate by driving the spin chuck, and (f) controlling the moving speed of the nozzle, while allowing the nozzle to supply the etchant solution to the thin film formed on the surface of the substrate which is being rotated, to conform with the moving speeds calculated in step (d) at the predetermined passing points of the nozzle so as to move the nozzle in a radial direction of the substrate.
    • 本发明提供了一种应用于薄的湿式蚀刻方法,包括以下步骤:(a)考虑到要蚀刻的薄膜的种类,所述蚀刻剂溶液的成分和所述蚀刻剂溶液的成分,预先设定所述薄膜的蚀刻速率 温度,(b)将基板装载在旋转卡盘上,使得其上形成有薄膜的表面朝上,(c)在基板的至少周边部分和中心部分检测薄膜的厚度。 该方法还包括步骤(d)基于步骤(a)中设定的蚀刻速率和在步骤(c)中检测到的膜厚度计算喷嘴在预定通过点处的移动速度,(e) 通过驱动旋转卡盘旋转基板,和(f)控制喷嘴的移动速度,同时允许喷嘴将蚀刻剂溶液供应到正在旋转的基板的表面上形成的薄膜,以符合 在步骤(d)中计算出的在喷嘴的预定通过点处的移动速度,以沿着基板的径向方向移动喷嘴。
    • 10. 发明授权
    • Apparatus for washing both surfaces of a substrate
    • 用于洗涤基底的两个表面的装置
    • US06173468B1
    • 2001-01-16
    • US09333915
    • 1999-06-16
    • Akira YonemizuYuji Matsuyama
    • Akira YonemizuYuji Matsuyama
    • B08B104
    • H01L21/67028B08B1/007B08B1/04B08B7/0057Y10S134/902
    • A method for washing both surfaces of a substrate, comprising (a) a first washing step for washing a front surface of a substrate, which is kept rotated, by bringing a scrubbing member into contact with said front surface of the substrate while supplying a washing liquid onto the front surface, (b) a second washing step for washing a back surface of the substrate, which is kept rotated, by bringing a scrubbing member into contact with said back surface of the substrate while supplying a washing liquid onto the back surface, (c) a heating step for drying under heat the wet surfaces of the substrate, (d) a recipe determining step for determining whether said heating step (c) is performed, at a period between said first washing step (a) and second washing step (b) and at a period after the second washing step (b), whether the heating step (c) is performed only once after the second washing step (b), or whether the heating step (c) is not performed, and (e) a conducting step for performing or not performing the heating step (C) in accordance with the recipe determined in said recipe determining step (d).
    • 一种用于洗涤基材的两个表面的方法,包括:(a)第一洗涤步骤,用于洗涤保持旋转的基材的前表面,通过使洗涤部件与所述基材的所述前表面接触,同时提供洗涤 液体到前表面上,(b)第二洗涤步骤,用于洗涤保持旋转的衬底的背面,通过使洗涤构件与衬底的所述背面接触,同时将洗涤液体供应到背面 (c)用于在加热下在基底的湿表面上干燥的加热步骤,(d)配方确定步骤,用于在所述第一洗涤步骤(a)和第二洗涤步骤(a)之间的时间段确定是否执行所述加热步骤(c) 洗涤步骤(b),并且在第二洗涤步骤(b)之后的时间段,在第二洗涤步骤(b)之后是否仅进行一次加热步骤(c),或者是否不进行加热步骤(c) 和(e)用于执行的导电步骤 或者根据在所述配方确定步骤(d)中确定的配方不执行加热步骤(C)。