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    • 6. 发明授权
    • Method for manufacturing a gallium nitride group compound semiconductor
    • 氮化镓基化合物半导体的制造方法
    • US06984536B2
    • 2006-01-10
    • US10052347
    • 2002-01-23
    • Katsuhide ManabeAkira MabuchiHisaki KatoMichinari SassaNorikatsu KoideShiro YamazakiMasafumi HashimotoIsamu Akasaki
    • Katsuhide ManabeAkira MabuchiHisaki KatoMichinari SassaNorikatsu KoideShiro YamazakiMasafumi HashimotoIsamu Akasaki
    • H01L21/20
    • H01L33/32H01L33/007H01L33/025
    • Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.
    • 本文公开了(1)使用氮化镓化合物半导体(Al x Ga 1-x N)的发光半导体器件,其中n层n 型氮化镓化合物半导体(Al x Ga 1-x N)是包括低载流子浓度的n层和n < 高载流子浓度的+层,前者与绝缘氮化镓化合物半导体(Al x Ga 1-x N)的i层相邻, ; (2)具有上述类似结构的发光半导体器件,其中i层是双层结构,包括相对较低的含有p型杂质的低杂质浓度的i L层 低浓度和高浓度的含有p型杂质的高杂质浓度的i H +层,前者与n层相邻; (3)具有上述两个特征的发光半导体器件和(4)制造n型氮化镓系化合物半导体层的方法(Al x Ga Ga 1-x N),通过气相外延从有机金属化合物具有受控的导电性,通过以可控混合比将含硅气体和其它原料气体一起供给到一起。