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    • 2. 发明申请
    • Method of Purifying (Z)-1-Chloro-3,3,3-Trifluoropropene
    • 纯化(Z)-1-氯-3,3,3-三氟丙烯的方法
    • US20110270001A1
    • 2011-11-03
    • US13142531
    • 2010-01-25
    • Akira IshiharaYasuo HibinoRyoichi Tamai
    • Akira IshiharaYasuo HibinoRyoichi Tamai
    • C07C17/386
    • C07C17/386C07C21/18
    • Disclosed is a method of purifying (Z)-1-chloro-3,3,3-trifluoropropene of the formula [1], comprising: distilling a mixture containing (Z)-1-chloro-3,3,3-trifluoropropene and 1-chloro-1,3,3,3-tetrafluoropropane (CF3CH2CHClF), wherein the distilling is performed by extractive distillation of the mixture in the coexistence of at least one kind of compound selected from the group consisting of halogenated hydrocarbons of the formula [2], halogenated unsaturated hydrocarbons, nitriles, ketones, carbonates, ethers, esters and alcohols as an extractant [Chem. 8] CFnCl3-nCHXCClFmH2-m  [2] where X represents a hydrogen atom (H), a fluorine atom (F) or a chlorine atom (Cl); n represents an integer of 0 to 3; and m represents an integer of 0 to 2.
    • 公开了一种纯化式[1]的(Z)-1-氯-3,3,3-三氟丙烯的方法,其包括:蒸馏含有(Z)-1-氯-3,3,3-三氟丙烯和 1-氯-1,3,3,3-四氟丙烷(CF 3 CH 2 CHClF),其中通过萃取蒸馏混合物进行蒸馏,所述混合物共存于至少一种选自式[ 2],卤代不饱和烃,腈,酮,碳酸酯,醚,酯和醇作为萃取剂[Chem。 8] CF nCl 3-n CHXCClFmH 2-m [2]其中X表示氢原子(H),氟原子(F)或氯原子(Cl); n表示0〜3的整数, m表示0〜2的整数。
    • 4. 发明授权
    • Method of purifying (Z)-1-chloro-3,3,3-trifluoropropene
    • 纯化(Z)-1-氯-3,3,3-三氟丙烯的方法
    • US08524956B2
    • 2013-09-03
    • US13142531
    • 2010-01-25
    • Akira IshiharaYasuo HibinoRyoichi Tamai
    • Akira IshiharaYasuo HibinoRyoichi Tamai
    • C07C17/38
    • C07C17/386C07C21/18
    • Disclosed is a method of purifying (Z)-1-chloro-3,3,3-trifluoropropene of the formula [1], comprising: distilling a mixture containing (Z)-1-chloro-3,3,3-trifluoropropene and 1-chloro-1,3,3,3-tetrafluoropropane (CF3CH2CHClF), wherein the distilling is performed by extractive distillation of the mixture in the coexistence of at least one kind of compound selected from the group consisting of halogenated hydrocarbons of the formula [2], halogenated unsaturated hydrocarbons, nitriles, ketones, carbonates, ethers, esters and alcohols as an extractant [Chem. 8] CFnCl3-nCHXCClFmH2-m  [2] where X represents a hydrogen atom (H), a fluorine atom (F) or a chlorine atom (Cl); n represents an integer of 0 to 3; and m represents an integer of 0 to 2.
    • 公开了一种纯化式[1]的(Z)-1-氯-3,3,3-三氟丙烯的方法,其包括:蒸馏含有(Z)-1-氯-3,3,3-三氟丙烯和 1-氯-1,3,3,3-四氟丙烷(CF 3 CH 2 CHClF),其中通过萃取蒸馏混合物进行蒸馏,所述混合物共存于至少一种选自式[ 2],卤代不饱和烃,腈,酮,碳酸酯,醚,酯和醇作为萃取剂[Chem。 8] CF nCl 3-n CHXCClFmH 2-m [2]其中X表示氢原子(H),氟原子(F)或氯原子(Cl); n表示0〜3的整数, m表示0〜2的整数。
    • 7. 发明授权
    • Cleaning processing system and cleaning processing apparatus
    • 清洁处理系统和清洁处理设备
    • US06842932B2
    • 2005-01-18
    • US09966082
    • 2001-10-01
    • Akira Ishihara
    • Akira Ishihara
    • H01L21/304B08B1/04H01L21/00H03H17/02H03H21/00A46B13/04A46B13/02
    • H01L21/67051B08B1/04H01L21/67046
    • A cleaning processing system for applying a cleaning processing to a substrate such as a semiconductor wafer comprises a cleaning processing section including a plurality of process units each serving to apply a predetermined treatment to a wafer W and a loading/unloading section 2 for loading and unloading the wafer W into and out of the cleaning processing section. The cleaning processing section includes four scrub cleaning units consisting of two scrub cleaning units arranged side by side and two additional cleaning units stacked on the two scrub cleaning units arranged side by side, respectively, so as to form upper and lower stages of the scrub cleaning units, a wafer inversion unit for turning the wafer W upside down, a wafer transit unit having the wafer W disposed thereon temporarily for performing the transfer of the wafer W to and from the transfer section, and a main wafer transfer mechanism capable of gaining access to all of these units and performing the transfer of the wafer W between different units.
    • 一种用于对诸如半导体晶片的衬底进行清洁处理的清洁处理系统包括清洁处理部分,其包括多个处理单元,每个处理单元用于对晶片W施加预定处理和用于装载和卸载的装载/卸载部分2 晶片W进入和离开清洁处理部分。 清洗处理部分包括四个擦洗清洁单元,它们由并排布置的两个擦洗清洁单元和两个并排布置的两个擦洗清洁单元上的两个另外的清洁单元组成,以便分别形成洗涤清洁的上段和下段 单元,用于使晶片W倒转的晶片反转单元,临时设置晶片W的晶片传输单元,用于执行将晶片W传送到转印部分和从转印部分传送晶片W;以及主晶片传送机构,其能够获得访问 到所有这些单元并且在不同单元之间执行晶片W的转移。
    • 8. 发明授权
    • Elastic fluorohydrocarbon resin and method of producing same
    • 弹性氟代烃树脂及其制备方法
    • US5902859A
    • 1999-05-11
    • US880545
    • 1997-06-23
    • Chikashi KawashimaAkira IshiharaKatunori KawamuraSeiiti Minegishi
    • Chikashi KawashimaAkira IshiharaKatunori KawamuraSeiiti Minegishi
    • C08F2/00C08F259/08C08L51/00
    • C08L51/00C08F259/08
    • The invention relates to an elastic fluorohydrocarbon resin. This resin is obtained by graft copolymerization of a first segment which is one of fluorine-containing elastomeric and crystalline polymers with a second segment which is the other of these polymers. The first segment is prepared by copolymerizing at least one first unsaturated monomer that has peroxy bond with at least one second fluorine-containing monomer. When the first monomer is dissolved in a first solvent prior to the copolymerization, the copolymerization can be safely conducted with higher yield. This first solvent is selected from a carboxylic ester of t-butanol, methylene chloride, 1,1,1-trichloroethane, and first, second, third and fourth compounds which are respectively represented by R.sup.1 COOR.sup.2, C.sub.2 H.sub.x Cl.sub.y F.sub.z, C.sub.3 H.sub.x Cl.sub.y F.sub.z, and C.sub.4 H.sub.x Cl.sub.y F.sub.z. When the fluorine-containing elastomeric copolymer as the first segment is purified by contact with a barium salt prior to the graft copolymerization, the elastic fluorohydrocarbon resin becomes improved in thermal stability. When the fluorine-containing elastomeric copolymer having a water content of 0.1-50 wt % as the first segment is dispersed in a liquid medium containing t-butanol and water, it becomes unnecessary to dry this elastomeric copolymer prior to the graft copolymerization. When the fluorine-containing elastomeric copolymer as the first segment is dispersed in another liquid medium containing t-butanol, water, a carboxylic ester and barium hydroxide, the elastic fluorohydrocarbon resin becomes improved in thermal stability with higher graft copolymerization rate.
    • 本发明涉及弹性氟代烃树脂。 该树脂通过作为氟弹性体和结晶聚合物之一的第一链段与作为这些聚合物中的另一个的第二链段的接枝共聚获得。 第一段通过使至少一种具有过氧键的第一不饱和单体与至少一种第二含氟单体共聚来制备。 当在共聚之前将第一单体溶解在第一溶剂中时,可以更高的收率安全地进行共聚。 该第一溶剂选自叔丁醇,二氯甲烷,1,1,1-三氯乙烷的羧酸酯,以及分别由R1COOR2,C2HxClyFz,C3HxClyFz和C4HxClyFz表示的第一,第二,第三和第四化合物。 当作为第一段的含氟弹性体共聚物在接枝共聚之前通过与钡盐接触而纯化时,弹性氟代烃树脂的热稳定性提高。 当具有0.1-50重量%水含量的含氟弹性体共聚物作为第一链段分散在含有叔丁醇和水的液体介质中时,在接枝共聚之前不需要干燥该弹性体共聚物。 当作为第一段的含氟弹性体共聚物分散在含有叔丁醇,水,羧酸酯和氢氧化钡的另一种液体介质中时,弹性氟代烃树脂的热稳定性提高,接枝共聚速率更高。
    • 9. 发明授权
    • Cleaning processing system and cleaning processing apparatus
    • 清洁处理系统和清洁处理设备
    • US07451515B2
    • 2008-11-18
    • US10932265
    • 2004-09-02
    • Hidetomo UemukaiAkira Ishihara
    • Hidetomo UemukaiAkira Ishihara
    • B08B1/00B08B3/02A46B13/04
    • H01L21/67051B08B1/04H01L21/67046
    • Disclosed herein is a processing system for applying a cleaning processing to a substrate such as a semiconductor wafer which includes a cleaning processing section including a plurality of process units each serving to apply a predetermined treatment to a wafer and a loading/unloading section 2 The cleaning processing section includes four scrub cleaning units consisting of two scrub cleaning units arranged side by side and two additional cleaning units stacked on the two scrub cleaning units arranged side by side, respectively, so as to form upper and lower stages of the scrub cleaning units, a wafer inversion unit for turning the wafer upside down, a wafer transit unit having the wafer disposed thereon temporarily for performing the transfer of the wafer to and from the transfer section, and a main wafer transfer mechanism.
    • 本文公开了一种用于对诸如半导体晶片的衬底施加清洁处理的处理系统,其包括清洁处理部分,该清洁处理部分包括用于对晶片和装载/卸载部分施加预定处理的多个处理单元。2清洁 处理部分包括四个擦洗清洁单元,其包括并排布置的两个擦洗清洁单元和分别并排布置的两个擦洗清洁单元上的两个另外的清洁单元,以形成洗涤清洁单元的上段和下段, 用于将晶片倒置的晶片反转单元,具有临时设置在其上的晶片的晶片转移单元,用于执行将晶片传送到转移部分和从转印部分转移晶片,以及主晶片转移机构。
    • 10. 发明授权
    • Substrate dual-side processing apparatus
    • 基板双面处理装置
    • US06874515B2
    • 2005-04-05
    • US10131041
    • 2002-04-25
    • Akira IshiharaMichiaki MatsushitaYukihiko Sakata
    • Akira IshiharaMichiaki MatsushitaYukihiko Sakata
    • H01L21/677B08B1/04B08B3/02B08B11/02H01L21/304H01L21/687
    • B08B1/04B08B3/02B08B11/02B08B2203/0288G02F2001/1316H01L21/68707Y10S134/902
    • A substrate dual-side processing apparatus has a processor to apply a specific process to a front surface and a rear surface of a substrate, a reversing unit to reverse the substrate and a substrate-transfer mechanism to transfer the substrate between the processor and the reversing unit. The reversing unit has a holder for holding the substrate when the substrate is being transferred to and from the substrate-transfer mechanism and a rotating mechanism for rotating the substrate, thus the substrate being reversed while held by the holders. The reversing unit may have a pair of holders for holding the substrate at the front and rear surfaces, a drive mechanism for driving the pair of holders so that the holders become close to or apart from each other and a rotating mechanism for rotating the substrate, thus the substrate being reversed while held by the holders.
    • 基板双面处理装置具有处理器,用于对基板的前表面和后表面施加特定的处理,反转单元以反转基板和基板传送机构,以在处理器和反转之间传送基板 单元。 反转单元具有用于当基板被转移到基板传送机构和从基板传送机构传送的基板时用于保持基板的保持器和用于旋转基板的旋转机构,因此基板在由保持器保持的同时被反转。 反转单元可以具有用于将基板保持在前表面和后表面的一对保持器,用于驱动一对保持器以使保持器彼此接近或分离的驱动机构和用于旋转基板的旋转机构, 因此基板在由保持器保持的同时被反转。