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1. 发明授权

US5766342A Method for forming silicon film and silicon film forming apparatus 失效
标题翻译：用于形成硅膜和硅膜形成装置的方法
公开(公告)号：US5766342A
公开(公告)日：1998-06-16
申请号：US544016
申请日：1995-10-17
申请人： Munehiro Shibuya , Masatoshi Kitagawa , Yuji Mukai , Takashi Hirao , Akihisa Yoshida
发明人： Munehiro Shibuya , Masatoshi Kitagawa , Yuji Mukai , Takashi Hirao , Akihisa Yoshida
IPC分类号： C23C16/24 , C23C16/448 , C30B23/06
CPC分类号： C23C16/4486 , C23C16/24 , Y10T117/1024
摘要： The method for forming a silicon film of this invention includes the steps of introducing a compound containing silicon and chlorine and being in a liquid form under normal pressure and at an ordinary temperature into a reaction chamber, and spraying the compound in the liquid form in a fine particle state to a surface of a substrate supported in the reaction chamber, and decomposing the compound in the fine particle state by energy applied from outside of the reaction chamber, and depositing a silicon film on the substrate supported in the reaction chamber.
摘要翻译：本发明的形成硅膜的方法包括以下步骤：在常压和常温下将含有硅和氯的化合物以液体形式引入反应室中，并将液体形式的化合物喷雾在微粒状态到支撑在反应室中的基板的表面，并且通过从反应室外部施加的能量分解微细状态的化合物，并在支撑在反应室中的基板上沉积硅膜。

2. 发明授权

US6123774A Apparatus and method of manufacturing semiconductor element 失效
标题翻译：半导体元件制造装置及其制造方法
公开(公告)号：US6123774A
公开(公告)日：2000-09-26
申请号：US867487
申请日：1997-06-02
申请人： Takashi Hirao , Akihisa Yoshida , Masatoshi Kitagawa
发明人： Takashi Hirao , Akihisa Yoshida , Masatoshi Kitagawa
IPC分类号： H01L21/00 , H01L21/205 , H01L21/223 , H01L21/265 , H01L21/28 , H01L21/336 , H01J37/00
CPC分类号： H01L21/2236 , H01L21/67213 , H01L29/66765
摘要： A large area semiconductor element can be manufactured with high productivity, which has low electric resistance at the boundary face of a metal and a semiconductor and has excellent characteristics and reliability. A manufacturing apparatus comprises an ion irradiation means for simultaneously irradiating hydrogen ions and ions containing an element serving as a dopant of a semiconductor to a semiconductor film or a substrate in an atmosphere under reduced pressure, and a film forming means which forms a thin film or a heat treatment means which conducts a heat treatment without exposing a sample to an air. When a sample having an a-Si:H thin film is brought into a sample preparation chamber by opening a gate valve, the chamber is exhausted to have the inside pressure of 10.sup.2 to 10.sup.-3 Pa. Then, the sample is forwarded to an ion irradiation chamber from the sample preparation chamber via an intermediate chamber of which the pressure is maintained in the range of 10.sup.-3 to 10.sup.-7 Pa, and ions such as phosphous are irradiated. After the ion irradiation, a gate valve is opened to transfer the sample to the intermediate chamber, and then a gate valve is opened to forward the sample to a deposition chamber. Subsequently, Ar gas is let in to the deposition chamber and a metal film of Al/Ti is deposited by a sputtering method. After the deposition, the sample is forwarded to a sample carry-out chamber via the intermediate chamber.
摘要翻译：可以以高生产率制造大面积半导体元件，其在金属和半导体的边界面处具有低电阻并且具有优异的特性和可靠性。一种制造装置包括：离子照射装置，用于在减压下的气氛中同时向半导体膜或基板中含有含有半导体的掺杂剂的氢离子和离子的离子和离子;以及成膜装置，其形成薄膜或进行热处理而不将样品暴露于空气的热处理装置。当通过打开闸阀将具有a-Si：H薄膜的样品送入样品制备室时，将室排出至内部压力为102至10 -3 Pa，然后将样品送至离子照射室从样品制备室经过其中压力保持在10 -3至10 -7 Pa的范围的中间室，并且照射诸如磷的离子。在离子照射之后，打开闸阀以将样品转移到中间室，然后打开闸阀以将样品转移到沉积室。随后，将Ar气体进入沉积室，通过溅射法沉积Al / Ti的金属膜。沉积后，样品通过中间室送到样品进样室。

3. 发明授权

US5976919A Apparatus and method of manufacturing semiconductor element 失效
公开(公告)号：US5976919A
公开(公告)日：1999-11-02
申请号：US905052
申请日：1997-08-01
申请人： Takashi Hirao , Akihisa Yoshida , Masatoshi Kitagawa
发明人： Takashi Hirao , Akihisa Yoshida , Masatoshi Kitagawa
IPC分类号： H01L21/00 , H01L21/223 , H01L21/336 , H01L21/265 , H01L21/786
CPC分类号： H01L21/67213 , H01L21/2236 , H01L29/66765
摘要： A large area semiconductor element can be manufactured with high productivity, which has low electric resistance at the boundary face of a metal and a semiconductor and has excellent characteristics and reliability. A manufacturing apparatus comprises an ion irradiation means for simultaneously irradiating hydrogen ions and ions containing an element serving as a dopant of a semiconductor to a semiconductor film or a substrate in an atmosphere under reduced pressure, and a film forming means which forms a thin film or a heat treatment means which conducts a heat treatment without exposing a sample to an air. When a sample having an a-Si:H thin film is brought into a sample preparation chamber by opening a gate valve, the chamber is exhausted to have the inside pressure of 10.sup.2 to 10.sup.-3 Pa. Then, the sample is forwarded to an ion irradiation chamber from the sample preparation chamber via an intermediate chamber of which the pressure is maintained in the range of 10.sup.-3 to 10.sup.-7 Pa, and ions such as phosphous are irradiated. After the ion irradiation, a gate valve is opened to transfer the sample to the intermediate chamber, and then a gate valve is opened to forward the sample to a deposition chamber. Subsequently, Ar gas is let in to the deposition chamber and a metal film of Al/Ti is deposited by a sputtering method. After the deposition, the sample is forwarded to a sample carry-out chamber via the intermediate chamber.

4. 发明授权

US5141885A Method of fabrication of thin film transistors 失效
标题翻译：薄膜晶体管的制造方法
公开(公告)号：US5141885A
公开(公告)日：1992-08-25
申请号：US709495
申请日：1991-06-03
申请人： Akihisa Yoshida , Masatoshi Kitagawa , Takashi Hirao
发明人： Akihisa Yoshida , Masatoshi Kitagawa , Takashi Hirao
IPC分类号： H01L29/78 , H01L21/223 , H01L21/336 , H01L29/786
CPC分类号： H01L29/66765 , H01L21/2236 , H01L29/78669
摘要： A method of fabricating a thin film transistor on an insulating substrate such as quartz or glass without defect in the channel region in semiconductor thin layer, or at the boundary between the semiconductor thin layer and gate insulation layer, but with high mobility and high integration. For that purpose, ions produced by the discharge-decomposition of a hydride gas including dopant are accelerated and implanted into the semiconductor thin layer, wherein the protecting insulation layer for protection of the channel region is of a thickness larger than the projected range of the hydrogen ion.
摘要翻译：在半导体薄层的沟道区域或半导体薄层与栅极绝缘层之间的边界处，但具有高移动性和高集成度的绝缘基板（例如石英或玻璃等）的绝缘基板上制造薄膜晶体管的方法。为此，通过包括掺杂剂的氢化物气体的放电分解产生的离子被加速并注入到半导体薄层中，其中用于保护沟道区的保护绝缘层的厚度大于氢的投影范围离子。

5. 发明授权

US06518494B1 Silicon structure, method for producing the same, and solar battery using the silicon structure 失效
标题翻译：硅结构体及其制造方法以及使用硅结构的太阳能电池
公开(公告)号：US06518494B1
公开(公告)日：2003-02-11
申请号：US08701292
申请日：1996-08-22
申请人： Munehiro Shibuya , Masatoshi Kitagawa , Yuuji Mukai , Akihisa Yoshida
发明人： Munehiro Shibuya , Masatoshi Kitagawa , Yuuji Mukai , Akihisa Yoshida
IPC分类号： H01L3100
CPC分类号： H01L31/0547 , H01L31/02363 , H01L31/035227 , Y02E10/52
摘要： A silicon structure having little solar light beam reflection, which is suitable for a solar battery. On the entire surface of a quartz substrate, Mo is deposited at a thickness of approximately 51 &mgr;m to form a lower electrode. On the entire surface of the lower electrode, a p type silicon structure having a thickness of 30 to 40 &mgr;m comprising an aggregate of a plurality of columnar silicon members mainly comprising silicon and having random orientations is formed via a film mainly comprising silicon, using Si2Cl6 mixed with BCl3. On the surface of the p type silicon structure, P is diffused by a thermal diffusion method using POCl3 to form an n type region at the periphery of the columnar silicon members. On the entire surface of the p type silicon structure, a transparent electrode comprising indium-tin oxide having a thickness of 30 to 40 &mgr;m is formed, and an upper electrode comprising Al having a thickness of approximately 1 &mgr;m is formed on the transparent electrode.
摘要翻译：具有太阳光反射少的硅结构，适用于太阳能电池。在石英衬底的整个表面上，以约51μm的厚度沉积Mo以形成下电极。在下电极的整个表面上，通过使用Si 2 Cl 6混合的主要包含硅的膜，形成厚度为30至40μm的包含多个主要由硅构成并具有随机取向的多个柱状硅构件的聚集体的ap型硅结构与BCl3。在p型硅结构的表面上，P通过使用POCl 3的热扩散法扩散，在柱状硅构件的周围形成n型区域。在p型硅结构的整个表面上，形成厚度为30〜40μm的氧化铟锡的透明电极，在透明电极上形成厚度约为1μm的包含Al的上部电极。

6. 发明授权

US06577386B2 Method and apparatus for activating semiconductor impurities 失效
标题翻译：激活半导体杂质的方法和装置
公开(公告)号：US06577386B2
公开(公告)日：2003-06-10
申请号：US09852656
申请日：2001-05-11
申请人： Akihisa Yoshida , Masatoshi Kitagawa , Masao Uchida , Makoto Kitabatake , Tsuneo Mitsuyu
发明人： Akihisa Yoshida , Masatoshi Kitagawa , Masao Uchida , Makoto Kitabatake , Tsuneo Mitsuyu
IPC分类号： H01L21263
CPC分类号： H01L29/6606 , H01L21/046 , H01L29/1608 , H01L29/861 , Y10T29/41
摘要： An impurity doped SiC substrate 1 and SiC thin film 2 are irradiated with a laser light 5 having a wavelength longer than such a wavelength that a band edge absorption of a semiconductor is caused. The wavelength of the laser light 5 may be such a wavelength that an absorption is caused by a vibration by the bond of an impurity element and an element constituting the semiconductor, for example, a wavelength of 9 &mgr;m to 11 &mgr;m. Specifically, in the case where Al is doped in SiC, the wavelength of the laser light 5 may be within the range of 9.5 &mgr;m to 10 &mgr;m.
摘要翻译：用波长比发生半导体的带边缘吸收的波长的波长的激光5照射杂质掺杂的SiC衬底1和SiC薄膜2。激光5的波长可以是由杂质元素和构成半导体的元素的键合引起的吸收引起的波长，例如9μm〜11μm的波长。具体地，在Al中掺杂有Al的情况下，激光5的波长可以在9.5μm〜10μm的范围内。

7. 发明授权

US06207282B1 Substrate surface treatment method 失效
标题翻译：基材表面处理方法
公开(公告)号：US06207282B1
公开(公告)日：2001-03-27
申请号：US08996762
申请日：1997-12-22
申请人： Masahiro Deguchi , Akihisa Yoshida , Makoto Kitabatake , Takashi Hirao
发明人： Masahiro Deguchi , Akihisa Yoshida , Makoto Kitabatake , Takashi Hirao
IPC分类号： B32B900
CPC分类号： C30B33/00 , C30B29/04 , H01J2237/0812 , Y10T428/24355 , Y10T428/24479 , Y10T428/30
摘要： Cluster particles including a plurality of molecules or atoms are prepared by a gas cluster method, are accelerated, and are then irradiated onto a diamond in a low pressure atmosphere, so that the unevenness surfaces of the diamond are smoothed with no damages in the diamond. The cluster particles are prepared by the steps of forming, ionizing, mass-separating, and accelerating cluster particles. The cluster particles with a certain energy are irradiated onto the surface of the diamond. Irradiated cluster particles collide with the surface of the diamond, and then break apart into each molecule or atom while changing momentum (direction and speed) or energy. Thus, the surface of the diamond is efficiently smoothed and etched.
摘要翻译：包含多个分子或原子的簇粒子通过气体簇法制备，被加速，然后在低压气氛中照射到金刚石上，使得金刚石的不平坦表面在金刚石中没有损坏的情况下被平滑化。通过形成，离子化，质量分离和加速簇粒子的步骤制备簇粒子。具有一定能量的簇粒子被照射到金刚石的表面上。辐照的簇粒子与金刚石的表面碰撞，然后在改变动量（方向和速度）或能量的同时分解成每个分子或原子。因此，金刚石的表面被有效地平滑和蚀刻。

8. 发明授权

US06255201B1 Method and device for activating semiconductor impurities 失效
标题翻译：激活半导体杂质的方法和装置
公开(公告)号：US06255201B1
公开(公告)日：2001-07-03
申请号：US09341464
申请日：1999-07-12
申请人： Akihisa Yoshida , Masatoshi Kitagawa , Masao Uchida , Makoto Kitabatake , Tsuneo Mitsuyu
发明人： Akihisa Yoshida , Masatoshi Kitagawa , Masao Uchida , Makoto Kitabatake , Tsuneo Mitsuyu
IPC分类号： H01L2142
CPC分类号： H01L29/6606 , H01L21/046 , H01L29/1608 , H01L29/861 , Y10T29/41
摘要： An impurity doped SiC substrate 1 and SiC thin film 2 are irradiated with a laser light 5 having a wavelength longer than such a wavelength that a band edge absorption of a semiconductor is caused. The wavelength of the laser light 5 may be such a wavelength that an absorption is caused by a vibration by the bond of an impurity element and an element constituting the semiconductor, for example, a wavelength of 9 &mgr;m to 11 &mgr;m. Specifically, in the case where Al is doped in SiC, the wavelength of the laser light 5 may be within the range of 9.5 &mgr;m to 10 &mgr;m.
摘要翻译：用波长比发生半导体的带边缘吸收的波长的波长的激光5照射杂质掺杂的SiC衬底1和SiC薄膜2。激光5的波长可以是由杂质元素和构成半导体的元素的键合引起的吸收引起的波长，例如9μm〜11μm的波长。具体地，在Al中掺杂有Al的情况下，激光5的波长可以在9.5μm〜10μm的范围内。

9. 发明授权

US6127211A Method of manufacturing transistor 有权
标题翻译：制造晶体管的方法
公开(公告)号：US6127211A
公开(公告)日：2000-10-03
申请号：US162450
申请日：1998-09-29
申请人： Takashi Hirao , Akihisa Yoshida , Toru Fukumoto , Kazuyasu Adachi
发明人： Takashi Hirao , Akihisa Yoshida , Toru Fukumoto , Kazuyasu Adachi
IPC分类号： H01L21/18 , H01L21/336 , H01L21/84 , H01L29/786
CPC分类号： H01L29/78621
摘要： In a method of manufacturing a semiconductor device having an LDD structure, source gases for generating plural types of impurity ions exhibiting different molecular weights and different projected ranges in a target during impurity implantation are supplied to a plasma space, ionized, accelerated with a voltage, and implanted in a semiconductor region on the target substrate. In the case of manufacturing a top-gate transistor, a gate electrode on the semiconductor region has a sufficient thickness to serve as a mask. In the case of manufacturing a bottom-gate transistor, a mask and a resistor are used. An implantation angle is set to an optimum value as desired. Thereafter, the impurity is activated as desired. Thus, the semiconductor device having the LDD structure is manufactured by a single step of impurity implantation.
摘要翻译：在制造具有LDD结构的半导体器件的方法中，在杂质注入期间在靶中产生表现出不同分子量和不同投影范围的多种杂质离子的源气体被提供给等离子体空间，电离电压加速，并注入目标衬底上的半导体区域。在制造顶栅晶体管的情况下，半导体区域上的栅电极具有足够的厚度用作掩模。在制造底栅晶体管的情况下，使用掩模和电阻器。根据需要将植入角度设定为最佳值。此后，根据需要激活杂质。因此，具有LDD结构的半导体器件通过杂质注入的一个步骤来制造。

10. 发明授权

US5814194A Substrate surface treatment method 失效
标题翻译：基材表面处理方法
公开(公告)号：US5814194A
公开(公告)日：1998-09-29
申请号：US542008
申请日：1995-10-12
申请人： Masahiro Deguchi , Akihisa Yoshida , Makoto Kitabatake , Takashi Hirao
发明人： Masahiro Deguchi , Akihisa Yoshida , Makoto Kitabatake , Takashi Hirao
IPC分类号： C30B33/00 , C30B33/12
CPC分类号： C30B33/00 , C30B29/04 , H01J2237/0812 , Y10T428/24355 , Y10T428/24479 , Y10T428/30
摘要： Cluster particles including a plurality of molecules or atoms are prepared by a gas cluster method, are accelerated, and are then irradiated onto a diamond in a low pressure atmosphere, so that the unevenness surfaces of the diamond are smoothed with no damages in the diamond. The cluster particles are prepared by the steps of forming, ionizing, mass-separating, and accelerating cluster particles. The cluster particles with a certain energy are irradiated onto the surface of the diamond. Irradiated cluster particles collide with the surface of the diamond, and then break apart into each molecule or atom while changing momentum (direction and speed) or energy. Thus, the surface of the diamond is efficiently smoothed and etched.
摘要翻译：包含多个分子或原子的簇粒子通过气体簇法制备，被加速，然后在低压气氛中照射到金刚石上，使得金刚石的不平坦表面在金刚石中没有损坏的情况下被平滑化。通过形成，离子化，质量分离和加速簇粒子的步骤制备簇粒子。具有一定能量的簇粒子被照射到金刚石的表面上。辐照的簇粒子与金刚石的表面碰撞，然后在改变动量（方向和速度）或能量的同时分解成每个分子或原子。因此，金刚石的表面被有效地平滑和蚀刻。

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