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1. 发明申请

US20070111498A1 Method of fabricating n-type semiconductor diamond, and semiconductor diamond 有权
公开(公告)号：US20070111498A1
公开(公告)日：2007-05-17
申请号：US11651502
申请日：2007-01-10
申请人： Akihiko Nambo , Takahiro Imai , Yoshiki Nishibayashi
发明人： Akihiko Nambo , Takahiro Imai , Yoshiki Nishibayashi
IPC分类号： H01L21/44
CPC分类号： C30B25/02 , C30B29/04 , H01L21/02376 , H01L21/0243 , H01L21/02433 , H01L21/02444 , H01L21/02494 , H01L21/02527 , H01L21/02576 , H01L21/02587 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L21/041 , H01L29/66022 , H01L29/66037
摘要： An n-type diamond epitaxial layer 20 is formed by processing a single-crystalline {100} diamond substrate 10 so as to form a {111} plane, and subsequently by causing diamond to epitaxially grow while n-doping the diamond {111} plane. Further, a combination of the n-type semiconductor diamond, p-type semiconductor diamond, and non-doped diamond, obtained in the above-described way, as well as the use of p-type single-crystalline {100} diamond substrate allow for a pn junction type, a pnp junction type, an npn junction type and a pin junction type semiconductor diamond to be obtained.

2. 发明申请

US20090160307A1 DIAMOND ELECTRON SOURCE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：金刚石电子源及其制造方法
公开(公告)号：US20090160307A1
公开(公告)日：2009-06-25
申请号：US12094250
申请日：2007-09-18
申请人： Akihiko Ueda , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
发明人： Akihiko Ueda , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： H01J1/16 , H01J9/02
CPC分类号： H01J1/3044 , H01J9/025 , H01J37/065 , H01J37/073 , H01J2201/30407 , H01J2201/30411 , H01J2201/30419 , H01J2201/30457 , H01J2237/06341 , H01J2237/26 , H01J2237/3137 , H01J2237/3146 , H01J2237/31749 , H01J2237/3175
摘要： A diamond electron source in which a single sharpened tip is formed at one end of a pillar-shaped diamond monocrystal of a size for which resist application is difficult in a microfabrication process, as an electron emission point used in an electron microscope or other electron beam device, and a method for manufacturing the diamond electron source. One end of a pillar-shaped diamond monocrystal 10 is ground to form a smooth flat surface 11, and a ceramic layer 12 is formed on the smooth flat surface 11. A thin-film layer 14 having a prescribed shape is deposited on the ceramic layer 12 using a focused ion beam device, after which the ceramic layer 12 is patterned by etching using the thin-film layer 14 as a mask. A single sharpened tip is formed at one end of the pillar-shaped diamond monocrystal 10 by dry etching using the resultant ceramic mask.
摘要翻译：一种金刚石电子源，其中在微细加工过程中难以施加抗蚀剂尺寸的柱状金刚石单晶的一端形成单个锐化尖端作为电子显微镜或其他电子束中使用的电子发射点器件，以及金刚石电子源的制造方法。将柱状金刚石单晶10的一端研磨成平滑的平坦面11，在平坦的平坦面11上形成陶瓷层12.具有规定形状的薄膜层14沉积在陶瓷层上 12，使用聚焦离子束装置，之后通过使用薄膜层14作为掩模的蚀刻对陶瓷层12进行图案化。通过使用所得到的陶瓷掩模的干蚀刻，在柱状金刚石单晶10的一端形成单个尖锐的尖端。

3. 发明申请

US20050202665A1 Method of fabricating n-type semiconductor diamond, and semiconductor diamond 有权
标题翻译：制造n型半导体金刚石和半导体金刚石的方法
公开(公告)号：US20050202665A1
公开(公告)日：2005-09-15
申请号：US11013450
申请日：2004-12-17
申请人： Akihiko Namba , Takahiro Imai , Yoshiki Nishibayashi
发明人： Akihiko Namba , Takahiro Imai , Yoshiki Nishibayashi
IPC分类号： C30B25/02 , C30B29/04 , H01L21/04 , H01L21/20 , H01L21/205 , H01L21/44
CPC分类号： C30B25/02 , C30B29/04 , H01L21/02376 , H01L21/0243 , H01L21/02433 , H01L21/02444 , H01L21/02494 , H01L21/02527 , H01L21/02576 , H01L21/02587 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L21/041 , H01L29/66022 , H01L29/66037
摘要： An n-type diamond epitaxial layer 20 is formed by processing a single-crystalline {100} diamond substrate 10 so as to form a {111} plane, and subsequently by causing diamond to epitaxially grow while n-doping the diamond {111} plane. Further, a combination of the n-type semiconductor diamond, p-type semiconductor diamond, and non-doped diamond, obtained in the above-described way, as well as the use of p-type single-crystalline {100} diamond substrate allow for a pn junction type, a pnp junction type, an npn junction type and a pin junction type semiconductor diamond to be obtained.
摘要翻译：通过处理单晶{100}金刚石衬底10以形成{111}面，然后通过使金刚石外延生长同时n掺杂金刚石{111}面而形成n型金刚石外延层20 。此外，以上述方式获得的n型半导体金刚石，p型半导体金刚石和非掺杂金刚石以及使用p型单晶{100}金刚石衬底的组合允许对于pn结型，pnp结型，npn结型和pin结型半导体金刚石。

4. 发明授权

US06709730B2 Method of making diamond product and diamond product 失效
标题翻译：制造钻石产品和钻石产品的方法
公开(公告)号：US06709730B2
公开(公告)日：2004-03-23
申请号：US09995854
申请日：2001-11-29
申请人： Yoshiki Nishibayashi , Kiichi Meguro , Takahiro Imai , Yutaka Ando
发明人： Yoshiki Nishibayashi , Kiichi Meguro , Takahiro Imai , Yutaka Ando
IPC分类号： B32B900
CPC分类号： H01J9/025 , C30B29/04 , C30B33/00 , H01J1/3044 , Y10T428/24355 , Y10T428/24628 , Y10T428/30
摘要： The method of making a diamond product in accordance with the present invention comprises the steps of forming a diamond substrate (50) with a mask layer (52), and etching the diamond substrate (50) formed with the mask layer (52) with a plasma of a mixed gas composed of a gas containing an oxygen atom and a gas containing a fluorine atom, whereas the fluorine atom concentration is within the range of 0.04% to 6% with respect to the total number of atoms in the mixed gas.
摘要翻译：制造根据本发明的金刚石产品的方法包括以下步骤：用掩模层（52）形成金刚石基底（50），并用形成有掩模层（52）的金刚石基底（50）蚀刻由含有氧原子的气体和含有氟原子的气体组成的混合气体的等离子体，而氟原子浓度相对于混合气体中的原子总数为0.04〜6％的范围。

5. 发明授权

US07898161B2 Diamond electron radiation cathode, electron source, electron microscope, and electron beam exposer 失效
标题翻译：金刚石电子辐射阴极，电子源，电子显微镜和电子束曝光机
公开(公告)号：US07898161B2
公开(公告)日：2011-03-01
申请号：US12095430
申请日：2007-06-27
申请人： Yoshiyuki Yamamoto , Akihiko Ueda , Yoshiki Nishibayashi , Takahiro Imai
发明人： Yoshiyuki Yamamoto , Akihiko Ueda , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： H01J1/02
CPC分类号： H01J1/304 , B82Y10/00 , B82Y40/00 , H01J37/073 , H01J37/3174 , H01J2201/30457 , H01J2237/06341 , H01J2237/26
摘要： An object is to provide an electron emitting cathode achieving high luminance, low energy dispersion, and long life. It is therefore an object to provide a diamond electron emitting cathode graspable on a sufficiently stable basis, sharpened at the tip, and improved in electric field intensity. A diamond electron emitting cathode 110 according to the present invention is partitioned into at least three regions, i.e., a front end region 203 intended for electron emission at a tip of columnar shape, a rear end region 201 intended for grasping opposite in the longitudinal direction, and a thinned intermediate region 202, a cross-sectional area of the rear end region is not less than 0.2 mm2, the tip of the front end region is sharpened, and a maximum cross-sectional area of the thinned intermediate region is not more than 0.1 mm2.
摘要翻译：目的是提供一种实现高亮度，低能量分散和长寿命的电子发射阴极。因此，本发明的目的是提供一种能够在足够稳定的基础上掌握的金刚石电子发射阴极，其尖端锐化，并提高电场强度。根据本发明的金刚石电子发射阴极110被划分成至少三个区域，即用于在柱形形状的尖端处用于电子发射的前端区域203，用于在纵向上相对握持的后端区域201 ，以及减薄的中间区域202，后端区域的截面积为0.2mm 2以上，前端区域的前端被削尖，并且变薄的中间区域的最大截面积不大大于0.1 mm2。

6. 发明授权

US07863805B2 Diamond electron emission cathode, electron emission source, electron microscope, and electron beam exposure device 失效
标题翻译：金刚石电子发射阴极，电子发射源，电子显微镜和电子束曝光装置
公开(公告)号：US07863805B2
公开(公告)日：2011-01-04
申请号：US11665472
申请日：2006-06-19
申请人： Yoshiyuki Yamamoto , Akihiko Ueda , Yoshiki Nishibayashi , Takahiro Imai
发明人： Yoshiyuki Yamamoto , Akihiko Ueda , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： H01J1/02 , H01J9/02 , H01J1/62 , H01J63/04
CPC分类号： H01J1/15 , H01J1/14 , H01J37/06 , H01J2237/06308 , H01J2237/06316
摘要： It is possible to provide an electron emission cathode, an electron emission source having a high-luminance and narrow energy width by using diamond and an electronic device using them. The diamond electron discharge cathode has a monocrystal diamond at least at a part of it. The diamond electron emission cathode has a columnar shape including a sharpened section and a heating section. The sharpened section has an electron emission section. The electron emission section and the heating section are formed by diamond semiconductor, which is formed by a p-type semiconductor containing 2×1015 cm−3 of p-type impurities or above. The electron emission section has the semiconductor. A metal layer is formed on the surface of the electron emission cathode. The metal layer exists at least at a part of the heating section. The distance from the electron emission section to the position nearest to the end of the metal layer is 500 μm. A pair of current introduction terminals supplies current to the heating section to heat the heating section. A part of the introduced electrons is emitted from the electron emission section.
摘要翻译：可以通过使用金刚石和使用它们的电子装置来提供电子发射阴极，具有高亮度和窄能量宽度的电子发射源。金刚石电子放电阴极至少在其一部分具有单晶金刚石。金刚石电子发射阴极具有包括锐化部分和加热部分的柱状。锐化部分具有电子发射部分。电子发射部分和加热部分由金刚石半导体形成，其由含有2×10 15 cm -3的p型杂质或以上的p型半导体形成。电子发射部分具有半导体。在电子发射阴极的表面上形成金属层。金属层至少存在于加热部的一部分。从电子发射部到最接近金属层末端的位置的距离为500μm。一对电流引入端子向加热部分供电以加热加热部分。引入的电子的一部分从电子发射部分发射。

7. 发明申请

US20080042144A1 Electron emitting device with projection comprising base portion and electron emission portion 失效
标题翻译：具有包括基底部分和电子发射部分的突起的电子发射器件
公开(公告)号：US20080042144A1
公开(公告)日：2008-02-21
申请号：US11889389
申请日：2007-08-13
申请人： Natsuo Tatsumi , Akihiko Namba , Yoshiki Nishibayashi , Takahiro Imai
发明人： Natsuo Tatsumi , Akihiko Namba , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： H01L29/15
CPC分类号： H01J63/02 , H01J1/3044 , H01J1/308
摘要： The present invention relates to an electron emitting device having a structure for efficiently emitting electrons. The electron emitting device has a substrate comprised of an n-type diamond, and a pointed projection provided on the substrate. The projection comprises a base provided on the substrate side, and an electron emission portion provided on the base and emitting electrons from the tip thereof. The base is comprised of an n-type diamond. The electron emission portion is comprised of a p-type diamond. The length from the tip of the projection (electron emission portion) to the interface between the base and the electron emission portion is preferably 100 nm or less.
摘要翻译：本发明涉及具有有效发射电子的结构的电子发射器件。电子发射器件具有由n型金刚石构成的基板和设置在基板上的尖突起。突起包括设置在基板侧的基座和设置在基座上并从其尖端发射电子的电子发射部分。底座由n型钻石组成。电子发射部分由p型金刚石构成。从突起（电子发射部分）的尖端到基底和电子发射部分之间的界面的长度优选为100nm以下。

8. 发明授权

US07307377B2 Electron emitting device with projection comprising base portion and electron emission portion 失效
标题翻译：具有包括基底部分和电子发射部分的突起的电子发射器件
公开(公告)号：US07307377B2
公开(公告)日：2007-12-11
申请号：US10952477
申请日：2004-09-29
申请人： Natsuo Tatsumi , Akihiko Namba , Yoshiki Nishibayashi , Takahiro Imai
发明人： Natsuo Tatsumi , Akihiko Namba , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： H01J1/02
CPC分类号： H01J63/02 , H01J1/3044 , H01J1/308
摘要： The present invention relates to an electron emitting device having a structure for efficiently emitting electrons. The electron emitting device has a substrate comprised of an n-type diamond, and a pointed projection provided on the substrate. The projection comprises a base provided on the substrate side, and an electron emission portion provided on the base and emitting electrons from the tip thereof. The base is comprised of an n-type diamond. The electron emission portion is comprised of a p-type diamond. The length from the tip of the projection (electron emission portion) to the interface between the base and the electron emission portion is preferably 100 nm or less.
摘要翻译：本发明涉及具有有效发射电子的结构的电子发射器件。电子发射器件具有由n型金刚石构成的衬底和设置在衬底上的尖突起。突起包括设置在基板侧的基座和设置在基座上并从其尖端发射电子的电子发射部分。底座由n型钻石组成。电子发射部分由p型金刚石构成。从突起（电子发射部分）的尖端到基底和电子发射部分之间的界面的长度优选为100nm以下。

9. 发明申请

US20050133735A1 Electron emitting device 失效
标题翻译：电子发射器件
公开(公告)号：US20050133735A1
公开(公告)日：2005-06-23
申请号：US10952477
申请日：2004-09-29
申请人： Natsuo Tatsumi , Akihiko Namba , Yoshiki Nishibayashi , Takahiro Imai
发明人： Natsuo Tatsumi , Akihiko Namba , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： H01J1/304 , H01J1/308 , H01J63/02 , G21G5/00
CPC分类号： H01J63/02 , H01J1/3044 , H01J1/308
摘要： The present invention relates to an electron emitting device having a structure for efficiently emitting electrons. The electron emitting device has a substrate comprised of an n-type diamond, and a pointed projection provided on the substrate. The projection comprises a base provided on the substrate side, and an electron emission portion provided on the base and emitting electrons from the tip thereof. The base is comprised of an n-type diamond. The electron emission portion is comprised of a p-type diamond. The length from the tip of the projection (electron emission portion) to the interface between the base and the electron emission portion is preferably 100 nm or less.
摘要翻译：本发明涉及具有有效发射电子的结构的电子发射器件。电子发射器件具有由n型金刚石构成的衬底和设置在衬底上的尖突起。突起包括设置在基板侧的基座和设置在基座上并从其尖端发射电子的电子发射部分。底座由n型钻石组成。电子发射部分由p型金刚石构成。从突起（电子发射部分）的尖端到基底和电子发射部分之间的界面的长度优选为100nm以下。

10. 发明授权

US07737614B2 Diamond electron emission cathode, electron emission source, electron microscope, and electron beam exposure device 失效
标题翻译：金刚石电子发射阴极，电子发射源，电子显微镜和电子束曝光装置
公开(公告)号：US07737614B2
公开(公告)日：2010-06-15
申请号：US11665459
申请日：2006-06-19
申请人： Akihiko Ueda , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
发明人： Akihiko Ueda , Yoshiyuki Yamamoto , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： H01J1/02 , H01J19/06
CPC分类号： H01J1/15 , H01J1/14 , H01J37/06 , H01J2237/06308 , H01J2237/06316
摘要： An object is to provide an electron emission cathode and an electron emission source using diamond and having a high brightness and a small energy width that are suitable for electron ray and electron beam devices and vacuum tubes, in particular, electron microscopes and electron beam exposure devices, and also electronic devices using such cathode and source. A diamond electron emission cathode according to the present invention has single crystal diamond in at least part thereof, the diamond electron emission cathode having a columnar shape formed by a sharpened acute section and a heating section, being provided with one electron emitting portion in the sharpened acute section, and being constituted of at least two types of semiconductors that differ in electric properties. One of the types constituting the semiconductors is an n-type semiconductor containing n-type impurities at 2×1015 cm3 or higher, the other one is a p-type semiconductor containing p-type impurities at 2×1015 cm−3 or higher, the p-type semiconductor and the n-type semiconductor are joined together, the heating section is energized parallel to the junction surface and directly heated by a pair of current introducing terminals, and some of the introduced electrons are emitted from the electron emitting portion.
摘要翻译：目的是提供使用金刚石的电子发射阴极和电子发射源，其具有适用于电子射线和电子束装置和真空管，特别是电子显微镜和电子束曝光装置的高亮度和小的能量宽度，以及使用这种阴极和源的电子设备。根据本发明的金刚石电子发射阴极在其至少一部分中具有单晶金刚石，金刚石电子发射阴极具有由锐化尖锐部分形成的柱状形状和加热部分，在锐化部分中设置有一个电子发射部分并且由电性能不同的至少两种类型的半导体构成。构成半导体的种类之一是含有2×1015cm3以上的n型杂质的n型半导体，另一种是含有2×10 15 cm -3以上的p型杂质的p型半导体， p型半导体和n型半导体结合在一起，加热部分被平行于接合面激励并被一对电流引入端直接加热，并且一些引入的电子从电子发射部分发射。

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