专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07148131B1 Method for implanting ions in a semiconductor 有权
标题翻译：在半导体中注入离子的方法
公开(公告)号：US07148131B1
公开(公告)日：2006-12-12
申请号：US10226884
申请日：2002-08-23
申请人： Agajan Suvkhanov , Mohammad Mirabedini
发明人： Agajan Suvkhanov , Mohammad Mirabedini
IPC分类号： H01L21/425
CPC分类号： H01L29/66537 , H01L21/26513 , H01L21/324 , Y10S438/914
摘要： A method for implanting ions in a semiconductor is disclosed. The method includes implanting indium ions into a substrate of a semiconductor material of the semiconductor device for a first time period. The method also includes implanting boron ions into the substrate for a second time period, wherein the first time period is initiated prior to the second time period.
摘要翻译：公开了一种在半导体中注入离子的方法。该方法包括在第一时间段内将铟离子注入到半导体器件的半导体材料的衬底中。该方法还包括在第二时间段内将硼离子注入衬底中，其中第一时间段在第二时间段之前启动。

2. 发明申请

US20050167654A1 Ion recoil implantation and enhanced carrier mobility in CMOS device 有权
标题翻译：离子反冲注入和CMOS器件中增强的载流子迁移率
公开(公告)号：US20050167654A1
公开(公告)日：2005-08-04
申请号：US11098290
申请日：2005-04-04
申请人： Agajan Suvkhanov , Mohammad Mirabedini
发明人： Agajan Suvkhanov , Mohammad Mirabedini
IPC分类号： H01L21/265 , H01L21/8238 , H01L29/10 , H01L31/109
CPC分类号： H01L21/823864 , H01L21/26506 , H01L21/26526 , H01L21/823807 , H01L29/1054
摘要： An integrated circuit (IC) includes a CMOS device formed above a semiconductor substrate having ions therein that are implanted in the semiconductor substrate by an ion recoil procedure. The IC preferably, but not necessarily, incorporates sub-0.1 micron technology in the CMOS device. The implanted ions may preferably be germanium ions. A strained-silicon layer is preferably, but not necessarily, formed above the ion-implanted layer of the semiconductor substrate. The strained-silicon layer may be formed by a silicon epitaxial growth on the ion-implanted layer or by causing the ions to recoil into the semiconductor substrate with such energy that a region of the semiconductor substrate in the vicinity of the surface thereof is left substantially free of the ions, thereby forming a strained-silicon layer in the substantially ion-free region.
摘要翻译：集成电路（IC）包括在其上具有离子的半导体衬底之上形成的CMOS器件，其通过离子反冲程序注入到半导体衬底中。 IC优选但不一定在CMOS器件中并入次0.1微米技术。注入的离子可以优选为锗离子。应变硅层优选但不一定形成在半导体衬底的离子注入层的上方。应变硅层可以通过在离子注入层上的硅外延生长或通过使离子以这样的能量回到半导体衬底中形成，使得其表面附近的半导体衬底的区域基本上保持没有离子，从而在基本上无离子的区域中形成应变硅层。

3. 发明授权

US07429749B2 Strained-silicon for CMOS device using amorphous silicon deposition or silicon epitaxial growth 有权
标题翻译：应变硅，用于使用非晶硅沉积或硅外延生长的CMOS器件
公开(公告)号：US07429749B2
公开(公告)日：2008-09-30
申请号：US10455489
申请日：2003-06-04
申请人： Agajan Suvkhanov , Mohammad R. Mirabedini
发明人： Agajan Suvkhanov , Mohammad R. Mirabedini
IPC分类号： H01L29/04
CPC分类号： H01L29/78 , H01L21/26506 , H01L29/1054
摘要： An integrated circuit (IC) includes a strained-silicon layer formed by deposition of amorphous silicon onto either a region of a semiconductor layer that has been implanted with ions to create a larger spacing between atoms in a crystalline lattice of the semiconductor layer or a silicon-ion layer that has been epitaxially grown on the semiconductor layer to have an increased spacing between atoms in the silicon-ion layer. Alternatively, the IC includes a strained-silicon layer formed by silicon epitaxial growth onto the region of the semiconductor layer that has been implanted with ions. The IC also preferably includes a CMOS device that preferably, but not necessarily, incorporates sub-0.1 micron technology. The implanted ions may preferably be heavy ions, such as germanium ions, antimony ions or others. Ion implantation may be done with a single implantation process, as well as with multiple implantation processes.
摘要翻译：集成电路（IC）包括通过将非晶硅沉积在已经注入离子的半导体层的区域上形成的应变硅层，以在半导体层的晶格中形成较大的原子之间或硅已经在半导体层上外延生长以在硅离子层中的原子之间具有增加的间隔。或者，IC包括通过硅外延生长形成在已经注入离子的半导体层的区域上的应变硅层。 IC还优选地包括优选但不一定包含次0.1微米技术的CMOS器件。注入的离子可以优选为重离子，例如锗离子，锑离子等。离子注入可以通过单个注入工艺以及多次注入工艺完成。

4. 发明授权

US06998343B1 Method for creating barrier layers for copper diffusion 失效
标题翻译：用于产生铜扩散的阻挡层的方法
公开(公告)号：US06998343B1
公开(公告)日：2006-02-14
申请号：US10721971
申请日：2003-11-24
申请人： Grace Sun , Vladimir Zubkov , William K. Barth , Sethuraman Lakshminarayanan , Sey-Shing Sun , Agajan Suvkhanov , Hao Cui
发明人： Grace Sun , Vladimir Zubkov , William K. Barth , Sethuraman Lakshminarayanan , Sey-Shing Sun , Agajan Suvkhanov , Hao Cui
IPC分类号： H01L21/44
CPC分类号： H01L21/76867 , H01L21/76807 , H01L21/76814 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76831 , H01L21/76834 , H01L21/76835 , H01L21/76841
摘要： A method for forming damascene interconnect copper diffusion barrier layers includes implanting calcium into the sidewalls of the trenches and vias. The calcium implantation into dielectric layers, such as oxides, is used to prevent Cu diffusion into oxide, such as during an annealing process step. The improved barrier layers of the present invention help prevent delamination of the Cu from the dielectric.
摘要翻译：用于形成镶嵌互连铜扩散阻挡层的方法包括将钙植入沟槽和通孔的侧壁中。诸如氧化物之类的介电层中的钙注入用于防止Cu扩散到氧化物中，例如在退火工艺步骤期间。本发明的改进的阻挡层有助于防止Cu从电介质分层。

5. 发明申请

US20060163581A1 Fabrication of strained silicon film via implantation at elevated substrate temperatures 审中-公开
标题翻译：在升高的基底温度下通过植入制造应变硅膜
公开(公告)号：US20060163581A1
公开(公告)日：2006-07-27
申请号：US11042275
申请日：2005-01-24
申请人： Agajan Suvkhanov
发明人： Agajan Suvkhanov
IPC分类号： H01L29/12 , H01L21/20 , H01L21/425
CPC分类号： H01L21/26506 , H01L29/1054 , H01L29/78
摘要： A strained-silicon film is disclosed. A silicon-germanium film is made by ion implantation of germanium into an epitaxial silicon layer, preferably at a temperature in the range of 200 C to 400 C. The wafer is annealed in situ or optionally after implantation. A silicon film is applied to the silicon-germanium film in a conventional manner to create the strained-silicon substrate.
摘要翻译：公开了应变硅膜。通过将锗离子注入外延硅层，优选在200℃至400℃范围内的温度下制造硅 - 锗膜。晶片在原位或任选地在植入后进行退火。以常规方式将硅膜施加到硅 - 锗膜上以产生应变硅衬底。

6. 发明授权

US07414721B1 In-situ metrology system and method for monitoring metalization and other thin film formation 有权
标题翻译：用于监测金属化等薄膜形成的原位测量系统和方法
公开(公告)号：US07414721B1
公开(公告)日：2008-08-19
申请号：US10328066
申请日：2002-12-23
申请人： Agajan Suvkhanov , Ynhi Thi Le
发明人： Agajan Suvkhanov , Ynhi Thi Le
IPC分类号： G01J4/00
CPC分类号： G01B11/0641 , G01N21/211 , G01N21/8422 , G01N21/9501 , G01N2021/213 , G01N2021/8416 , G01N2021/8438 , H01L22/12
摘要： An in-line, in-process or in-situ and non-destructive metrology system, apparatus and method provides composition, quality and/or thickness measurement of a thin film or multi-layer thin film formed on a substrate in a thin film processing system. Particularly, the subject invention provides a spectroscopic ellipsometer performing spectroscopic ellipsometry while the wafer is in a thin film processing system. In one form, the spectroscopic ellipsometer is associated with a wet bench system portion of the thin film processing system. The spectroscopic ellipsometer obtains characteristic data regarding the formed thin film to calculate penetration depth (Dp) for a thin film formed on the substrate. Particularly, the ellipsometer obtains an extinction coefficient (k) which is used to calculate penetration depth (Dp). Penetration depth (Dp), being a unique function of the extinction coefficient (k) provides the information for the composition, quality and/or thickness monitoring of the thin film.
摘要翻译：在线，在制或原位和非破坏性的测量系统，装置和方法提供了在薄膜处理中形成在基底上的薄膜或多层薄膜的组成，质量和/或厚度测量系统。特别地，本发明提供了一种在晶片处于薄膜处理系统中时执行光谱椭偏仪的分光椭偏仪。在一种形式中，光谱椭偏仪与薄膜处理系统的湿式台架系统部分相关联。光谱椭偏仪获得关于所形成的薄膜的特征数据，以计算形成在基板上的薄膜的穿透深度（D＆lt; P＆lt; SUB）。特别地，椭偏仪获得用于计算穿透深度的消光系数（k）。作为消光系数（k）的唯一功能的穿透深度（D
P）提供了薄膜的组成，质量和/或厚度监测的信息。

7. 发明授权

US07129516B2 Ion recoil implantation and enhanced carrier mobility in CMOS device 有权
公开(公告)号：US07129516B2
公开(公告)日：2006-10-31
申请号：US11098290
申请日：2005-04-04
申请人： Agajan Suvkhanov , Mohammad R. Mirabedini
发明人： Agajan Suvkhanov , Mohammad R. Mirabedini
IPC分类号： H01L29/06 , H01L31/0328
CPC分类号： H01L21/823864 , H01L21/26506 , H01L21/26526 , H01L21/823807 , H01L29/1054
摘要： An integrated circuit (IC) includes a CMOS device formed above a semiconductor substrate having ions therein that are implanted in the semiconductor substrate by an ion recoil procedure. The IC preferably, but not necessarily, incorporates sub-0.1 micron technology in the CMOS device. The implanted ions may preferably be germanium ions. A strained-silicon layer is preferably, but not necessarily, formed above the ion-implanted layer of the semiconductor substrate. The strained-silicon layer may be formed by a silicon epitaxial growth on the ion-implanted layer or by causing the ions to recoil into the semiconductor substrate with such energy that a region of the semiconductor substrate in the vicinity of the surface thereof is left substantially free of the ions, thereby forming a strained-silicon layer in the substantially ion-free region.

8. 发明授权

US06982229B2 Ion recoil implantation and enhanced carrier mobility in CMOS device 失效
标题翻译：离子反冲注入和CMOS器件中增强的载流子迁移率
公开(公告)号：US06982229B2
公开(公告)日：2006-01-03
申请号：US10418375
申请日：2003-04-18
申请人： Agajan Suvkhanov , Mohammad R. Mirabedini
发明人： Agajan Suvkhanov , Mohammad R. Mirabedini
IPC分类号： H01L23/48
CPC分类号： H01L21/823864 , H01L21/26506 , H01L21/26526 , H01L21/823807 , H01L29/1054
摘要： An integrated circuit (IC) includes a CMOS device formed above a semiconductor substrate having ions therein that are implanted in the semiconductor substrate by an ion recoil procedure. The IC preferably, but not necessarily, incorporates sub-0.1 micron technology in the CMOS device. The implanted ions may preferably be germanium ions. A strained-silicon layer is preferably, but not necessarily, formed above the ion-implanted layer of the semiconductor substrate. The strained-silicon layer may be formed by a silicon epitaxial growth on the ion-implanted layer or by causing the ions to recoil into the semiconductor substrate with such energy that a region of the semiconductor substrate in the vicinity of the surface thereof is left substantially free of the ions, thereby forming a strained-silicon layer in the substantially ion-free region.
摘要翻译：集成电路（IC）包括在其上具有离子的半导体衬底之上形成的CMOS器件，其通过离子反冲程序注入到半导体衬底中。 IC优选但不一定在CMOS器件中并入次0.1微米技术。注入的离子可以优选为锗离子。应变硅层优选但不一定形成在半导体衬底的离子注入层的上方。应变硅层可以通过在离子注入层上的硅外延生长或通过使离子以这样的能量回到半导体衬底中形成，使得其表面附近的半导体衬底的区域基本上保持没有离子，从而在基本上无离子的区域中形成应变硅层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式