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1. 发明授权

US09345132B2 Substrate structure and the process manufacturing the same 有权
标题翻译：基板结构和工艺制造相同
公开(公告)号：US09345132B2
公开(公告)日：2016-05-17
申请号：US13761172
申请日：2013-02-07
申请人： Yu-Ru Chang , Yu-Fang Hsia , Ling-Chih Chou
发明人： Yu-Ru Chang , Yu-Fang Hsia , Ling-Chih Chou
IPC分类号： H05K1/03 , H05K1/02 , H01L23/498 , H01L23/60
CPC分类号： H05K1/0298 , H01L23/49822 , H01L23/49838 , H01L23/60 , H01L2924/0002 , H05K1/0286 , H05K1/11 , H05K1/18 , H05K3/10 , H05K3/22 , H05K3/4694 , H05K2201/09127 , H05K2201/09972 , H05K2203/0228 , Y10T29/49155 , H01L2924/00
摘要： The present invention discloses a package substrate layout design to achieve multiple substrate functions for engineering development and verification. The substrate layout contains a connection structure to connect to a plurality of power/ground domains on the package substrate. With different combination of the cutting lines on the package substrate, the invention can achieve multiple substrate functions without impacting the customer's PCB or system board design and provide cost effective and fast cycle time for engineering development phase.
摘要翻译：本发明公开了一种封装基板布局设计，以实现用于工程开发和验证的多个基板功能。衬底布局包含连接到封装衬底上的多个电源/接地区域的连接结构。通过封装基板上切割线的不同组合，本发明可以实现多种基板功能，而不会影响客户的PCB或系统板设计，并为工程开发阶段提供成本效益和快速的周期时间。

2. 发明申请

US20140216802A1 SUBSTRATE STRUCTURE AND THE PROCESS MANUFACTURING THE SAME 有权
标题翻译：基板结构及其制造方法
公开(公告)号：US20140216802A1
公开(公告)日：2014-08-07
申请号：US13761172
申请日：2013-02-07
申请人： Yu-Ru Chang , Yu-Fang Hsia , Ling-Chih Chou
发明人： Yu-Ru Chang , Yu-Fang Hsia , Ling-Chih Chou
IPC分类号： H05K1/11 , H05K3/10
CPC分类号： H05K1/0298 , H01L23/49822 , H01L23/49838 , H01L23/60 , H01L2924/0002 , H05K1/0286 , H05K1/11 , H05K1/18 , H05K3/10 , H05K3/22 , H05K3/4694 , H05K2201/09127 , H05K2201/09972 , H05K2203/0228 , Y10T29/49155 , H01L2924/00
摘要： The present invention discloses a package substrate layout design to achieve multiple substrate functions for engineering development and verification. The substrate layout contains a connection structure to connect to a plurality of power/ground domains on the package substrate. With different combination of the cutting lines on the package substrate, the invention can achieve multiple substrate functions without impacting the customer's PCB or system board design and provide cost effective and fast cycle time for engineering development phase.
摘要翻译：本发明公开了一种封装基板布局设计，以实现用于工程开发和验证的多个基板功能。衬底布局包含连接到封装衬底上的多个电源/接地区域的连接结构。通过封装基板上切割线的不同组合，本发明可以实现多种基板功能，而不会影响客户的PCB或系统板设计，并为工程开发阶段提供成本效益和快速的周期时间。

3. 发明授权

US08772071B2 Method of manufacturing thin film solar cells 有权
标题翻译：制造薄膜太阳能电池的方法
公开(公告)号：US08772071B2
公开(公告)日：2014-07-08
申请号：US13314332
申请日：2011-12-08
申请人： Jun-Chin Liu , Yu-Hung Chen , Chien-Liang Wu , Yu-Ru Chen , Yu-Ming Wang
发明人： Jun-Chin Liu , Yu-Hung Chen , Chien-Liang Wu , Yu-Ru Chen , Yu-Ming Wang
IPC分类号： H01L31/00 , H01L31/0224 , H01L21/00
CPC分类号： H01L31/1888 , H01L31/0463 , H01L31/056 , Y02E10/52
摘要： A method for manufacturing thin film solar cells, includes forming a light permeable first electrode layer in the back light surface of a glass substrate, and formed in the first electrode layer a plurality of first openings for exposing a part of the back light surface therefrom; forming a photoelectric conversion layer on the first electrode layer and the exposed back light surface, and forming a plurality of second openings in the photoelectric conversion layer for exposing a part of the first electrode layer therefrom; and forming a glistening second electrode layer having a plurality of third openings formed therein, wherein the second electrode layer comprises a conductive colloid comprised of non-diffractive fillings and polymeric base material.
摘要翻译：一种制造薄膜太阳能电池的方法，包括在玻璃基板的背光表面形成透光性第一电极层，在第一电极层上形成多个第一开口，用于使背光表面露出一部分; 在所述第一电极层和所述暴露的背光表面上形成光电转换层，以及在所述光电转换层中形成多个第二开口，用于使所述第一电极层的一部分露出; 以及形成其中形成有多个第三开口的闪光的第二电极层，其中所述第二电极层包括由非衍射填料和聚合物基材构成的导电胶体。

4. 发明授权

US08766319B2 Semiconductor device with ultra thin silicide layer 有权
标题翻译：具有超薄硅化物层的半导体器件
公开(公告)号：US08766319B2
公开(公告)日：2014-07-01
申请号：US13456238
申请日：2012-04-26
申请人： Kuo-Chih Lai , Chia Chang Hsu , Nien-Ting Ho , Bor-Shyang Liao , Shu Min Huang , Min-Chung Cheng , Yu-Ru Yang
发明人： Kuo-Chih Lai , Chia Chang Hsu , Nien-Ting Ho , Bor-Shyang Liao , Shu Min Huang , Min-Chung Cheng , Yu-Ru Yang
IPC分类号： H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L21/76889 , H01L29/41791 , H01L29/66795
摘要： A manufacturing method of a semiconductor device comprises the following steps. First, a substrate is provided, at least one fin structure is formed on the substrate, and a metal layer is then deposited on the fin structure to form a salicide layer. After depositing the metal layer, the metal layer is removed but no RTP is performed before the metal layer is removed. Then a RTP is performed after the metal layer is removed.
摘要翻译：半导体器件的制造方法包括以下步骤。首先，提供基板，在基板上形成至少一个翅片结构，然后在翅片结构上沉积金属层以形成自对准硅化物层。在沉积金属层之后，除去金属层，但在除去金属层之前不进行RTP。然后在去除金属层之后执行RTP。

5. 发明申请

US20130221542A1 Functional Spacer for SIP and Methods for Forming the Same 有权
标题翻译： SIP功能间隔器及其形成方法
公开(公告)号：US20130221542A1
公开(公告)日：2013-08-29
申请号：US13405018
申请日：2012-02-24
申请人： Yu-Ru Chang , Chung-Kai Wang , Ming-Che Wu
发明人： Yu-Ru Chang , Chung-Kai Wang , Ming-Che Wu
IPC分类号： H01L23/498 , H01L21/50
CPC分类号： H01L24/97 , H01L21/308 , H01L21/78 , H01L23/13 , H01L23/3128 , H01L23/49816 , H01L23/49833 , H01L23/552 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L2224/0231 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48227 , H01L2224/48464 , H01L2224/73204 , H01L2224/73257 , H01L2224/73265 , H01L2224/8385 , H01L2224/92247 , H01L2224/94 , H01L2224/97 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06537 , H01L2225/06572 , H01L2924/00014 , H01L2924/10253 , H01L2924/15156 , H01L2924/15184 , H01L2924/15311 , H01L2924/181 , H01L2924/19107 , H01L2924/3025 , H01L2924/00 , H01L2924/00012 , H01L2224/81 , H01L2224/83 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： A device includes a spacer, which includes a recess extending from a top surface of the spacer into the spacer, and a conductive feature including a first portion and a second portion continuously connected to the first portion. The first portion extends into the recess. The second portion is on the top surface of the spacer. A die is attached to the spacer, and a lower portion of the first die extends into the recess.
摘要翻译：一种装置包括间隔件，其包括从隔离件的顶表面延伸到间隔件中的凹部，以及包括连续地连接到第一部分的第一部分和第二部分的导电特征。第一部分延伸到凹槽中。第二部分位于间隔物的顶表面上。模具附接到间隔件，并且第一模具的下部延伸到凹部中。

6. 发明授权

US08310012B2 Semiconductor device having metal gate and manufacturing method thereof 有权
标题翻译：具有金属栅极的半导体器件及其制造方法
公开(公告)号：US08310012B2
公开(公告)日：2012-11-13
申请号：US12759670
申请日：2010-04-13
申请人： Guang-Yaw Hwang , Yu-Ru Yang , Jiunn-Hsiung Liao , Pei-Yu Chou
发明人： Guang-Yaw Hwang , Yu-Ru Yang , Jiunn-Hsiung Liao , Pei-Yu Chou
IPC分类号： H01L29/78 , H01L21/3205
CPC分类号： H01L21/823842 , H01L21/82385 , H01L29/42372 , H01L29/4966 , H01L29/66545 , H01L29/66583 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device includes a semiconductor substrate, a gate dielectric layer formed on the semiconductor substrate, and at least a first conductive-type metal gate formed on the gate dielectric layer. The first conductive-type metal gate includes a filling metal layer and a U-type metal layer formed between the filling metal layer and the gate dielectric layer. A topmost portion of the U-type metal layer is lower than the filling metal layer.
摘要翻译：半导体器件包括半导体衬底，形成在半导体衬底上的栅极电介质层和形成在栅极介电层上的至少第一导电型金属栅极。第一导电型金属栅极包括在填充金属层和栅极介电层之间形成的填充金属层和U型金属层。 U型金属层的最上部比填充金属层低。

7. 发明申请

US20120132264A1 SOLAR CELL AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20120132264A1
公开(公告)日：2012-05-31
申请号：US13018370
申请日：2011-01-31
申请人： Chien-Hsun Chen , Yu-Ru Chen
发明人： Chien-Hsun Chen , Yu-Ru Chen
IPC分类号： H01L31/072 , H01L31/02
CPC分类号： H01L31/03529 , H01L31/0684 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A solar cell and a method for fabricating the same are described. A pyramid structure is formed on a silicon substrate. A laser treatment is performed on the pyramid structure, so that a top portion of the pyramid structure has an arc shape, and a round is formed at a crest line of the pyramid structure. Films formed during subsequent processes hence have a uniform thickness and conversion efficiency of the solar cell is improved.
摘要翻译：对太阳能电池及其制造方法进行说明。在硅衬底上形成金字塔结构。对金字塔结构进行激光处理，使得金字塔结构的顶部具有弧形，并且在金字塔结构的顶部线处形成圆形。因此，在后续处理中形成的膜具有均匀的厚度，并且提高了太阳能电池的转换效率。

8. 发明申请

US20110254060A1 Metal Gate Structure and Fabricating Method thereof 审中-公开
标题翻译：金属门结构及其制造方法
公开(公告)号：US20110254060A1
公开(公告)日：2011-10-20
申请号：US12760782
申请日：2010-04-15
申请人： Yu-Ru YANG , Tzung-Ying Lee , Chin-Fu Lin , Chi-Mao Hsu
发明人： Yu-Ru YANG , Tzung-Ying Lee , Chin-Fu Lin , Chi-Mao Hsu
IPC分类号： H01L29/772 , H01L21/28
CPC分类号： H01L29/518 , H01L21/28088 , H01L29/4966 , H01L29/513 , H01L29/665 , H01L29/66545 , H01L29/78
摘要： A method of fabricating a metal gate structure is provided. Firstly, a high-K gate dielectric layer is formed on a semiconductor substrate. Then, a first metal-containing layer having a surface away from the gate dielectric layer is formed on the gate dielectric layer. After that, the surface of the first metal-containing layer is treated to improve the nitrogen content thereof of the surface. Subsequently, a silicon layer is formed on the first metal-containing layer. Because the silicon layer is formed on the surface having high nitrogen content, the catalyzing effect to the silicon layer resulted from the metal material in the first metal-containing layer can be prevented. As a result, the process yield is improved.
摘要翻译：提供一种制造金属栅极结构的方法。首先，在半导体衬底上形成高K栅介质层。然后，在栅极电介质层上形成具有离开栅极电介质层的表面的第一含金属层。之后，处理第一含金属层的表面以改善其表面的氮含量。随后，在第一含金属层上形成硅层。由于在具有高氮含量的表面上形成硅层，所以可以防止由第一含金属层中的金属材料产生的对硅层的催化作用。结果，工艺产量提高。

9. 发明授权

US07405209B2 Protease inhibitors 失效
标题翻译：蛋白酶抑制剂
公开(公告)号：US07405209B2
公开(公告)日：2008-07-29
申请号：US11152745
申请日：2005-06-14
申请人： Robert Wells Marquis, Jr. , Yu Ru , Daniel Frank Veber , Maxwell David Cummings , Scott Kevin Thompson , Dennis Shinji Yamashita
发明人： Robert Wells Marquis, Jr. , Yu Ru , Daniel Frank Veber , Maxwell David Cummings , Scott Kevin Thompson , Dennis Shinji Yamashita
IPC分类号： A61P19/00 , A61K31/55 , A61K31/00 , C07D223/08 , C07D403/00 , C07D405/00 , C07D409/00
CPC分类号： C07D405/14 , A61K38/00 , C07D223/12 , C07D401/10 , C07D401/12 , C07D401/14 , C07D403/12 , C07D405/12 , C07D409/12 , C07D409/14 , C07D413/14 , C07D417/12 , C07D417/14 , C07D471/04 , C07D491/04 , C07D495/04 , C07K5/06139
摘要： The present invention provides 4-amino-azepan-3-one protease inhibitors and pharmaceutically acceptable salts, hydrates and solvates thereof which inhibit proteases, including cathepsin K, pharmaceutical compositions of such compounds, novel intermediates of such compounds, and methods for treating diseases of excessive bone loss or cartilage or matrix degradation, including osteoporosis; gingival disease including gingivitis and periodontitis; arthritis, more specifically, osteoarthritis and rheumatoid arthritis; Paget's disease; hypercalcemia of malignancy; and metabolic bone disease, comprising inhibiting said bone loss or excessive cartilage or matrix degradation by administering to a patient in need thereof a compound of the present invention.
摘要翻译：本发明提供了抑制蛋白酶的4-氨基 - 氮杂-3-酮蛋白酶抑制剂及其药学上可接受的盐，水合物和溶剂化物，包括组织蛋白酶K，这些化合物的药物组合物，这些化合物的新中间体，以及治疗疾病的方法骨质疏松过多或软骨或基质降解，包括骨质疏松症; 牙龈疾病包括牙龈炎和牙周炎; 关节炎，更具体地，骨关节炎和类风湿性关节炎; 佩吉特病恶性高钙血症; 和代谢性骨病，其包括通过向有需要的患者施用本发明的化合物来抑制所述骨丢失或过度软骨或基质降解。

10. 发明授权

US07259034B2 Self-alignment manufacturing method of the microlens and the aperture using in optical devices 有权
标题翻译：微透镜的自对准制造方法和光学器件中使用的孔径
公开(公告)号：US07259034B2
公开(公告)日：2007-08-21
申请号：US11052875
申请日：2005-02-09
申请人： Yi Chiu , Wen Syang Hsu , Yu-Ru Chang
发明人： Yi Chiu , Wen Syang Hsu , Yu-Ru Chang
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , H01L27/14627 , H01L31/02327
摘要： The present invention discloses a self-alignment manufacturing method of a microlens and an aperture using in an optical device. The method manufactures the aperture and the circular opening in the opaque film on a transparent substrate, and utilizes the self-alignment backside exposure technology to precisely integrate the aperture and the microlens made by macromolecule material without any combination step. The claimed method is simpler than conventional technology and can precisely align and integrate the microlens and the aperture with a continuous batch manufacture. Since the aperture and the circular opening are concentric circles and formed in same step, the microlens and the aperture can be precisely aligned with the backside exposure. The claimed invention can effectively improve the optical resolution and efficiency of the optical access and measurement devices.
摘要翻译：本发明公开了一种在光学装置中使用的微透镜和孔径的自对准制造方法。该方法在透明基板上制造不透明膜中的孔径和圆形开口，并利用自对准背面曝光技术精确地将孔径和由大分子材料制成的微透镜整合，而无需任何组合步骤。要求保护的方法比常规技术简单，并且可以通过连续批量制造精确对准和整合微透镜和孔。由于光圈和圆形开口是同心圆并且在同一步骤中形成，因此微透镜和光圈可以与背面曝光精确对准。所要求保护的发明可以有效地提高光学接入和测量装置的光学分辨率和效率。

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