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1. 发明授权

US08772071B2 Method of manufacturing thin film solar cells 有权
标题翻译：制造薄膜太阳能电池的方法
公开(公告)号：US08772071B2
公开(公告)日：2014-07-08
申请号：US13314332
申请日：2011-12-08
申请人： Jun-Chin Liu , Yu-Hung Chen , Chien-Liang Wu , Yu-Ru Chen , Yu-Ming Wang
发明人： Jun-Chin Liu , Yu-Hung Chen , Chien-Liang Wu , Yu-Ru Chen , Yu-Ming Wang
IPC分类号： H01L31/00 , H01L31/0224 , H01L21/00
CPC分类号： H01L31/1888 , H01L31/0463 , H01L31/056 , Y02E10/52
摘要： A method for manufacturing thin film solar cells, includes forming a light permeable first electrode layer in the back light surface of a glass substrate, and formed in the first electrode layer a plurality of first openings for exposing a part of the back light surface therefrom; forming a photoelectric conversion layer on the first electrode layer and the exposed back light surface, and forming a plurality of second openings in the photoelectric conversion layer for exposing a part of the first electrode layer therefrom; and forming a glistening second electrode layer having a plurality of third openings formed therein, wherein the second electrode layer comprises a conductive colloid comprised of non-diffractive fillings and polymeric base material.
摘要翻译：一种制造薄膜太阳能电池的方法，包括在玻璃基板的背光表面形成透光性第一电极层，在第一电极层上形成多个第一开口，用于使背光表面露出一部分; 在所述第一电极层和所述暴露的背光表面上形成光电转换层，以及在所述光电转换层中形成多个第二开口，用于使所述第一电极层的一部分露出; 以及形成其中形成有多个第三开口的闪光的第二电极层，其中所述第二电极层包括由非衍射填料和聚合物基材构成的导电胶体。

2. 发明申请

US20130078755A1 METHOD OF MANUFACTURING THIN FILM SOLAR CELLS 有权
标题翻译：制造薄膜太阳能电池的方法
公开(公告)号：US20130078755A1
公开(公告)日：2013-03-28
申请号：US13314332
申请日：2011-12-08
申请人： Jun-Chin LIU , Yu-Hung Chen , Chien-Liang Wu , Yu-Ru Chen , Yu-Ming Wang
发明人： Jun-Chin LIU , Yu-Hung Chen , Chien-Liang Wu , Yu-Ru Chen , Yu-Ming Wang
IPC分类号： H01L31/18
CPC分类号： H01L31/1888 , H01L31/0463 , H01L31/056 , Y02E10/52
摘要： A method for manufacturing thin film solar cells, includes forming a light permeable first electrode layer in the back light surface of a glass substrate, and formed in the first electrode layer a plurality of first openings for exposing a part of the back light surface therefrom; forming a photoelectric conversion layer on the first electrode layer and the exposed back light surface, and forming a plurality of second openings in the photoelectric conversion layer for exposing a part of the first electrode layer therefrom; and forming a glistening second electrode layer having a plurality of third openings formed therein, wherein the second electrode layer comprises a conductive colloid comprised of non-diffractive fillings and polymeric base material.
摘要翻译：一种制造薄膜太阳能电池的方法，包括在玻璃基板的背光表面形成透光性第一电极层，在第一电极层上形成多个第一开口，用于使背光表面露出一部分; 在所述第一电极层和所述暴露的背光表面上形成光电转换层，以及在所述光电转换层中形成多个第二开口，用于使所述第一电极层的一部分露出; 以及形成其中形成有多个第三开口的闪光的第二电极层，其中所述第二电极层包括由非衍射填料和聚合物基材构成的导电胶体。

3. 发明授权

US08557041B1 Method for manufacturing P-I-N microcrystalline silicon structure for thin-film solar cells 有权
标题翻译：薄膜太阳能电池用P-I-N微晶硅结构的制造方法
公开(公告)号：US08557041B1
公开(公告)日：2013-10-15
申请号：US13549049
申请日：2012-07-13
申请人： Yu-Hung Chen , Jun-Chin Liu , Chun-Heng Chen
发明人： Yu-Hung Chen , Jun-Chin Liu , Chun-Heng Chen
IPC分类号： C30B23/00 , C30B29/06 , C30B29/00 , C30B25/14 , H01L21/67
CPC分类号： C30B23/00 , C30B25/14 , C30B29/00 , C30B29/06 , H01L21/02532 , H01L21/0262 , H01L21/67253 , H01L31/075 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A method for manufacturing a P-I-N microcrystalline silicon structure for thin-film solar cells, includes the steps of: (a) forming a P-type layer; (b) forming an I-type layer including a plurality of sub-layers successively stacked on the P-type layer using gas mixtures including fluoride and hydride that have different gas ratios, respectively; and (c) forming an N-type layer on the I-type layer. First, second, and third I-type sub-layers may be formed on the P-type layer using gas mixtures including fluoride and hydride at a first, second, and third gas ratios, respectively. Then, advantageously, the third gas ratio may be larger than the second gas ratio and the second gas ratio may be larger than the first gas ratio, and the first gas ratio may be 8%, the second gas ratio may range between 15% and 35%, and the third gas ratio may range between 35% and 50%.
摘要翻译：一种薄膜太阳能电池用P-I-N微晶硅结构体的制造方法，包括以下步骤：（a）形成P型层; （b）使用分别具有不同气体比的氟化物和氢化物的气体混合物，分别形成包括依次层叠在P型层上的多个子层的I型层; 和（c）在I型层上形成N型层。可以分别在第一，第二和第三气体比例下使用包括氟化物和氢化物的气体混合物在P型层上形成第一，第二和第三I型亚层。那么有利地，第三气体比可以大于第二气体比，第二气体比可以大于第一气体比，第一气体比可以是8％，第二气体比可以在15％和 35％，第三气体比可以在35％至50％之间。

4. 发明申请

US20090269874A1 METHOD FOR FABRICATING FLEXIBLE PIXEL ARRAY SUBSTRATE 有权
标题翻译：用于制造柔性像素阵列基板的方法
公开(公告)号：US20090269874A1
公开(公告)日：2009-10-29
申请号：US12487657
申请日：2009-06-19
申请人： Chin-Jen Huang , Jung-Fang Chang , Yih-Rong Luo , Yu-Hung Chen
发明人： Chin-Jen Huang , Jung-Fang Chang , Yih-Rong Luo , Yu-Hung Chen
IPC分类号： H01L33/00
CPC分类号： H01L51/56 , G02F1/133305 , H01L27/3244 , H01L51/003 , H01L51/0097 , H01L51/5253 , H01L2227/326 , Y02E10/549
摘要： In a method for fabricating a flexible pixel array substrate, first, a release layer is formed on a rigid substrate. Next, on the release layer, a polymer film is formed, the adhesive strength between the rigid substrate and the release layer being higher than that between the release layer and the polymer film. The polymer film is formed by spin coating a polymer monomer and performing a curing process to form a polymer layer. Afterwards, a pixel array is formed on the polymer film. The polymer film with the pixel array formed thereon is separated from the rigid substrate.
摘要翻译：在柔性像素阵列基板的制造方法中，首先，在刚性基板上形成剥离层。接着，在剥离层上形成聚合物膜，刚性基材和剥离层之间的粘合强度高于剥离层与聚合物膜之间的粘合强度。聚合物膜通过旋涂聚合物单体并进行固化过程以形成聚合物层而形成。之后，在聚合物膜上形成像素阵列。其上形成有像素阵列的聚合物膜与刚性基板分离。

5. 发明申请

US20100080977A1 STRUCTURE OF THERMAL RESISTIVE LAYER AND THE METHOD OF FORMING THE SAME 有权
标题翻译：热电阻层的结构及其形成方法
公开(公告)号：US20100080977A1
公开(公告)日：2010-04-01
申请号：US12630204
申请日：2009-12-03
申请人： Jung-Fang Chang , Te-Chi Wong , Chien-Te Hsieh , Chin-Jen Huang , Yu-Hung Chen
发明人： Jung-Fang Chang , Te-Chi Wong , Chien-Te Hsieh , Chin-Jen Huang , Yu-Hung Chen
IPC分类号： B32B3/00
CPC分类号： H01L29/78603 , B32B3/085 , B32B3/20 , B32B3/266 , B32B5/16 , B32B5/18 , B32B15/00 , B32B15/08 , B32B15/16 , B32B27/06 , B32B27/08 , B32B27/14 , B32B2250/40 , B32B2255/10 , B32B2255/205 , B32B2264/102 , B32B2307/306 , B32B2307/704 , B32B2457/20 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L51/0096 , H01L51/529 , Y10T428/249953 , Y10T428/249969 , Y10T428/24997 , Y10T428/249971 , Y10T428/249974 , Y10T428/249975 , Y10T428/249987 , Y10T428/24999 , Y10T428/31678
摘要： The prevent invention discloses a structure of thermal resistive layer and the method of forming the same. The thermal resistive structures, formed on a plastic substrate, comprises a porous layer, formed on said plastic substrate, including a plurality of oxides of hollow structure, and a buffer layer, formed on said porous layer, wherein said porous layer can protect said plastic substrate from damage caused by the heat generated during manufacturing process. With the structure and method disclosed above, making a thin film transistor and forming electronic devices on the plastic substrate in the technology of Low Temperature PolySilicon, i.e. LTPS, without changing any parameters is easy to carry out.
摘要翻译：本发明公开了一种耐热层的结构及其形成方法。形成在塑料基板上的热电阻结构包括形成在所述塑料基板上的多孔层，所述多孔层包括多个中空结构的氧化物和形成在所述多孔层上的缓冲层，其中所述多孔层可以保护所述塑料基板由制造过程中产生的热量造成的损坏。利用上述结构和方法，在不改变任何参数的情况下，在低温多硅（即LTPS）的技术中，在塑料基板上制造薄膜晶体管并形成电子器件容易进行。

6. 发明授权

US08029890B2 Structure of thermal resistive layer and the method of forming the same 有权
标题翻译：热电阻层的结构及其形成方法
公开(公告)号：US08029890B2
公开(公告)日：2011-10-04
申请号：US12630204
申请日：2009-12-03
申请人： Jung-Fang Chang , Te-Chi Wong , Chien-Te Hsieh , Chin-Jen Huang , Yu-Hung Chen
发明人： Jung-Fang Chang , Te-Chi Wong , Chien-Te Hsieh , Chin-Jen Huang , Yu-Hung Chen
IPC分类号： B32B3/26
CPC分类号： H01L29/78603 , B32B3/085 , B32B3/20 , B32B3/266 , B32B5/16 , B32B5/18 , B32B15/00 , B32B15/08 , B32B15/16 , B32B27/06 , B32B27/08 , B32B27/14 , B32B2250/40 , B32B2255/10 , B32B2255/205 , B32B2264/102 , B32B2307/306 , B32B2307/704 , B32B2457/20 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L51/0096 , H01L51/529 , Y10T428/249953 , Y10T428/249969 , Y10T428/24997 , Y10T428/249971 , Y10T428/249974 , Y10T428/249975 , Y10T428/249987 , Y10T428/24999 , Y10T428/31678
摘要： The prevent invention discloses a structure of thermal resistive layer and the method of forming the same. The thermal resistive structures, formed on a plastic substrate, comprises a porous layer, formed on said plastic substrate, including a plurality of oxides of hollow structure, and a buffer layer, formed on said porous layer, wherein said porous layer can protect said plastic substrate from damage caused by the heat generated during manufacturing process. With the structure and method disclosed above, making a thin film transistor and forming electronic devices on the plastic substrate in the technology of Low Temperature PolySilicon, i.e. LTPS, without changing any parameters is easy to carry out.
摘要翻译：本发明公开了一种耐热层的结构及其形成方法。形成在塑料基板上的热电阻结构包括形成在所述塑料基板上的多孔层，所述多孔层包括多个中空结构的氧化物和形成在所述多孔层上的缓冲层，其中所述多孔层可以保护所述塑料基板由制造过程中产生的热量造成的损坏。利用上述结构和方法，在不改变任何参数的情况下，在低温多硅（即LTPS）的技术中，在塑料基板上制造薄膜晶体管并形成电子器件容易进行。

7. 发明授权

US07936551B2 Electronic device with electrostatic guiding structure 有权
标题翻译：具有静电引导结构的电子设备
公开(公告)号：US07936551B2
公开(公告)日：2011-05-03
申请号：US12511905
申请日：2009-07-29
申请人： Yu-Hung Chen
发明人： Yu-Hung Chen
IPC分类号： H02H1/00
CPC分类号： H05K9/0067
摘要： An electronic device with an electrostatic guiding structure includes a metal case, a plastic case overlapping the metal case, a conductive strip, and an electrically insulating strip. The conductive strip is electrically connected to a conductive region of the plastic case, and has at least one tip portion. An end point of the tip portion is located at an edge of the electrically insulating strip, and separated from the metal case with the electrically insulating strip. The conductive region is electrically connected to a ground region of an electronic module. Therefore, when electrostatic charges accumulated in the metal case is above a specific value, the electrostatic charges are discharged to the ground region of the electronic module according to point discharge principle, thereby protecting user of the electronic device from getting an electric shock.
摘要翻译：具有静电引导结构的电子设备包括金属外壳，与金属外壳重叠的塑料外壳，导电条和电绝缘条。导电带电连接到塑料外壳的导电区域，并具有至少一个尖端部分。尖端部分的端点位于电绝缘条的边缘处，并且与电绝缘条与金属壳分离。导电区域电连接到电子模块的接地区域。因此，当金属壳体中累积的静电电荷高于特定值时，根据点放电原理将静电电荷排出到电子模块的接地区域，从而保护电子设备的用户免受电击。

8. 发明授权

US07807551B2 Method for fabricating flexible pixel array substrate 有权
标题翻译：制造柔性像素阵列基板的方法
公开(公告)号：US07807551B2
公开(公告)日：2010-10-05
申请号：US12487657
申请日：2009-06-19
申请人： Chin-Jen Huang , Jung-Fang Chang , Yih-Rong Luo , Yu-Hung Chen
发明人： Chin-Jen Huang , Jung-Fang Chang , Yih-Rong Luo , Yu-Hung Chen
IPC分类号： H01L21/46
CPC分类号： H01L51/56 , G02F1/133305 , H01L27/3244 , H01L51/003 , H01L51/0097 , H01L51/5253 , H01L2227/326 , Y02E10/549
摘要： In a method for fabricating a flexible pixel array substrate, first, a release layer is formed on a rigid substrate. Next, on the release layer, a polymer film is formed, the adhesive strength between the rigid substrate and the release layer being higher than that between the release layer and the polymer film. The polymer film is formed by spin coating a polymer monomer and performing a curing process to form a polymer layer. Afterwards, a pixel array is formed on the polymer film. The polymer film with the pixel array formed thereon is separated from the rigid substrate.
摘要翻译：在柔性像素阵列基板的制造方法中，首先，在刚性基板上形成剥离层。接着，在剥离层上形成聚合物膜，刚性基材和剥离层之间的粘合强度高于剥离层与聚合物膜之间的粘合强度。聚合物膜通过旋涂聚合物单体并进行固化过程以形成聚合物层而形成。之后，在聚合物膜上形成像素阵列。其上形成有像素阵列的聚合物膜与刚性基板分离。

9. 发明申请

US20060093807A1 Structure of thermal resistive layer and the method of forming the same 审中-公开
标题翻译：热电阻层的结构及其形成方法
公开(公告)号：US20060093807A1
公开(公告)日：2006-05-04
申请号：US11023569
申请日：2004-12-29
申请人： Jung-Fang Chang , Te-Chi Wong , Chien-Te Hsieh , Chin-Jen Huang , Yu-Hung Chen
发明人： Jung-Fang Chang , Te-Chi Wong , Chien-Te Hsieh , Chin-Jen Huang , Yu-Hung Chen
IPC分类号： B32B3/26 , B32B3/00
CPC分类号： H01L29/78603 , B32B3/085 , B32B3/20 , B32B3/266 , B32B5/16 , B32B5/18 , B32B15/00 , B32B15/08 , B32B15/16 , B32B27/06 , B32B27/08 , B32B27/14 , B32B2250/40 , B32B2255/10 , B32B2255/205 , B32B2264/102 , B32B2307/306 , B32B2307/704 , B32B2457/20 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L51/0096 , H01L51/529 , Y10T428/249953 , Y10T428/249969 , Y10T428/24997 , Y10T428/249971 , Y10T428/249974 , Y10T428/249975 , Y10T428/249987 , Y10T428/24999 , Y10T428/31678
摘要： The prevent invention discloses a structure of thermal resistive layer and the method of forming the same. The thermal resistive structures, formed on a plastic substrate, comprises a porous layer, formed on said plastic substrate, including a plurality of oxides of hollow structure, and a buffer layer, formed on said porous layer, wherein said porous layer can protect said plastic substrate from damage caused by the heat generated during manufacturing process. With the structure and method disclosed above, making a thin film transistor and forming electronic devices on the plastic substrate in the technology of Low Temperature PolySilicon, i.e. LTPS, without changing any parameters is easy to carry out.
摘要翻译：本发明公开了一种耐热层的结构及其形成方法。形成在塑料基板上的热电阻结构包括形成在所述塑料基板上的多孔层，所述多孔层包括多个中空结构的氧化物和形成在所述多孔层上的缓冲层，其中所述多孔层可以保护所述塑料基板由制造过程中产生的热量造成的损坏。利用上述结构和方法，在不改变任何参数的情况下，在低温多硅（即LTPS）的技术中，在塑料基板上制造薄膜晶体管并形成电子器件容易进行。

10. 发明授权

US08969146B2 Array substrate and manufacturing method thereof 有权
标题翻译：阵列基板及其制造方法
公开(公告)号：US08969146B2
公开(公告)日：2015-03-03
申请号：US13615661
申请日：2012-09-14
申请人： Yi-Chen Chung , Chia-Yu Chen , Hui-Ling Ku , Yu-Hung Chen , Chi-Wei Chou , Fan-Wei Chang , Hsueh-Hsing Lu , Hung-Che Ting
发明人： Yi-Chen Chung , Chia-Yu Chen , Hui-Ling Ku , Yu-Hung Chen , Chi-Wei Chou , Fan-Wei Chang , Hsueh-Hsing Lu , Hung-Che Ting
IPC分类号： H01L21/84
CPC分类号： H01L27/1288 , H01L21/28008 , H01L21/31133 , H01L27/1222 , H01L27/1225 , H01L27/124 , H01L2227/323
摘要： A manufacturing method of an array substrate includes the following steps. A gate electrode and a gate insulator layer are successively formed on a substrate. A semiconductor layer, an etching stop layer, a hard mask layer, and a second patterned photoresist are successively formed on the gate insulator layer. The second patterned photoresist is employed for performing an over etching process to the hard mask layer to form a patterned hard mask layer. The second patterned photoresist is employed for performing a first etching process to the etching stop layer. The second patterned photoresist is then employed for performing a second etching process to the semiconductor layer to form a patterned semiconductor layer. The etching stop layer uncovered by the patterned hard mask layer is then removed for forming a patterned etching stop layer.
摘要翻译：阵列基板的制造方法包括以下步骤。在基板上依次形成栅极电极和栅极绝缘体层。在栅极绝缘体层上依次形成半导体层，蚀刻停止层，硬掩模层和第二图案化光致抗蚀剂。第二图案化的光致抗蚀剂用于对硬掩模层进行过蚀刻工艺以形成图案化的硬掩模层。第二图案化光刻胶用于对蚀刻停止层进行第一蚀刻处理。然后使用第二图案化的光致抗蚀剂来对半导体层执行第二蚀刻工艺以形成图案化的半导体层。由图案化的硬掩模层未覆盖的蚀刻停止层然后被去除以形成图案化的蚀刻停止层。

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