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1. 发明申请

US20220388706A1 BOTTLE EASY TO CARRY AND CLEAN 有权
公开(公告)号：US20220388706A1
公开(公告)日：2022-12-08
申请号：US17336590
申请日：2021-06-02
申请人： KUEI YING HSU
发明人： KUEI YING HSU
IPC分类号： B65D1/02 , B65D43/02 , B65D41/04
摘要： A bottle that is easy to carry and clean includes a bottle body and a bottle cap. The bottle body includes an upper section and a lower section. The lower section has a lower chamber therein and an opening at a top end thereof. The upper section has an upper chamber therein and a bottle mouth at a top end thereof. The upper section is detachably coupled to the lower section through a coupling portion and closes the opening. The upper chamber communicates with the lower chamber. The bottle body has a flat configuration with a width greater than twice a thickness after the upper section and the lower section are combined together. The bottle cap is configured to cover the bottle mouth.

2. 发明授权

US09216788B1 Bicycle saddle 有权
标题翻译：自行车马鞍
公开(公告)号：US09216788B1
公开(公告)日：2015-12-22
申请号：US14560617
申请日：2014-12-04
申请人： Chung-Ying Hsu , Chien-Shun Lai , Chia-Wen Lee
发明人： Chung-Ying Hsu , Chien-Shun Lai , Chia-Wen Lee
IPC分类号： B62J1/00 , B62J1/18 , B62J1/08
CPC分类号： B62J1/10
摘要： A bicycle saddle includes a leather cushion, a rail, and an adjusting assembly. The rail has a front end provided with an upward-extending portion, and has a rear end fixed to a rear end of the leather cushion. The adjusting assembly has a bolt holder, an adjusting bolt, and an adjusting seat. The bolt holder is fixed to a front end of the leather cushion and has a through hole. The adjusting bolt is rotatably received in the through hole of the bolt holder. The adjusting seat is fixed to the upward-extending portion of the rail and is screwed and engaged with the threaded trunk of the adjusting bolt. Thereby, the saddle is unlikely to sway and remains structurally stable during cycling, and noise can be effectively reduced.
摘要翻译：自行车鞍座包括皮革衬垫，轨道和调整组件。导轨具有设置有向上延伸部分的前端，并且其后端固定到皮革衬垫的后端。调节组件具有螺栓保持器，调节螺栓和调节座。螺栓保持器固定在皮革衬垫的前端，并具有通孔。调节螺栓可旋转地容纳在螺栓保持器的通孔中。调节座固定在轨道的向上延伸部分上，并与调整螺栓的螺纹螺纹螺纹接合。因此，鞍座在循环期间不太可能摇摆并保持结构稳定，并且可以有效地降低噪声。

3. 发明申请

US20150018724A1 Balance Augmentation Sensors 审中-公开
标题翻译：平衡增强传感器
公开(公告)号：US20150018724A1
公开(公告)日：2015-01-15
申请号：US14331686
申请日：2014-07-15
申请人： Ying Hsu , Ellwood Payson , Itzhak Sapir , Virgilio Villacorta
发明人： Ying Hsu , Ellwood Payson , Itzhak Sapir , Virgilio Villacorta
IPC分类号： A61B5/11
CPC分类号： A61B5/1116 , A61B5/0002 , A61B5/112 , A61B5/1121 , A61B5/4023 , A61B5/6823 , A61B5/7455 , A61B2505/09 , A61B2562/0219
摘要： Current rehabilitative treatment of balance disorder requires long and intensive processes. The development of a wearable device for use in clinic as well as at home and during daily routine activities would enable continuous treatment outside of specialized training settings and accelerated relieve of balance disorder. The patent describes a wearable device that utilizes inertial sensors and sensor fusion processing to measure body posture and provide real-time feedback to alert the wearer to remain in the region of stability, and that utilizes wireless communication to support therapy and training providers.
摘要翻译：目前平衡障碍的康复治疗需要长期和密集的过程。在临床以及家庭和日常生活中使用的可穿戴设备的开发将可以在专门的训练环境之外持续进行治疗，并加速缓解平衡障碍。该专利描述了一种可穿戴设备，其利用惯性传感器和传感器融合处理来测量身体姿势并提供实时反馈以警告佩戴者保持在稳定区域，并且利用无线通信来支持治疗和训练提供者。

4. 发明授权

US08440511B1 Method for manufacturing multi-gate transistor device 有权
标题翻译：多栅极晶体管器件制造方法
公开(公告)号：US08440511B1
公开(公告)日：2013-05-14
申请号：US13298264
申请日：2011-11-16
申请人： Chin-I Liao , Chia-Lin Hsu , Ming-Yen Li , Min-Ying Hsu , Hsin-Huei Wu , Yung-Lun Hsieh , Chien-Hao Chen , Bo-Syuan Lee
发明人： Chin-I Liao , Chia-Lin Hsu , Ming-Yen Li , Min-Ying Hsu , Hsin-Huei Wu , Yung-Lun Hsieh , Chien-Hao Chen , Bo-Syuan Lee
IPC分类号： H01L21/00
CPC分类号： H01L21/306 , H01L29/66795 , H01L29/7854
摘要： A method for manufacturing multi-gate transistor device includes providing a semiconductor substrate having a patterned semiconductor layer and a patterned hard mask sequentially formed thereon, removing the patterned hard mask, performing a thermal treatment to rounding the patterned semiconductor layer with a process temperature lower than 800° C., and sequentially forming a gate dielectric layer and a gate layer covering a portion of the patterned semiconductor layer on the semiconductor substrate.
摘要翻译：一种用于制造多栅极晶体管器件的方法包括：提供具有图案化半导体层的半导体衬底和在其上依次形成的图案化硬掩模，去除图案化的硬掩模，进行热处理以使处理温度低于 800℃，并顺序地形成覆盖半导体衬底上的图案化半导体层的一部分的栅极电介质层和栅极层。

5. 发明授权

US08343867B2 Method for main spacer trim-back 有权
标题翻译：主间隔装饰方法
公开(公告)号：US08343867B2
公开(公告)日：2013-01-01
申请号：US13234674
申请日：2011-09-16
申请人： Jin-Aun Ng , Yu-Ying Hsu , Chi-Ju Lee , Sin-Hua Wu , Bao-Ru Young , Harry-Hak-Lay Chuang
发明人： Jin-Aun Ng , Yu-Ying Hsu , Chi-Ju Lee , Sin-Hua Wu , Bao-Ru Young , Harry-Hak-Lay Chuang
IPC分类号： H01L21/4763
CPC分类号： H01L21/823425 , H01L21/823468 , H01L21/823475
摘要： The embodiments of methods described in this disclosure for trimming back nitride spacers for replacement gates allows the hard mask layers (or hard mask) to protect the polysilicon above the high-K dielectric during trim back process. The process sequence also allows determining the trim-back amount based on the process uniformity (or control) of nitride deposition and nitride etchback (or trimming) processes. Nitride spacer trim-back process integration is critical to avoid creating undesirable consequences, such as silicided polyisicon on top of high-K dielectric described above. The integrated process also allows widening the space between the gate structures to allow formation of silicide with good quality and allow contact plugs to have sufficient contact with the silicide regions. The silicide with good quality and good contact between the contact plugs and the silicide regions increase the yield of contact and allows the contact resistance to be in acceptable and workable ranges.
摘要翻译：在本公开中描述的用于修整用于替换栅极的氮化物间隔物的方法的实施例允许硬掩模层（或硬掩模）在修整回复工艺期间保护高K电介质上方的多晶硅。工艺顺序还允许基于氮化物沉积和氮化物回蚀（或修整）工艺的工艺均匀性（或控制）确定修剪量。氮化物间隔件后退工艺集成对于避免产生不期望的后果至关重要，例如上述高K电介质顶部的硅化聚异氰酸酯。集成的过程还允许扩大栅极结构之间的空间以允许形成具有良好质量的硅化物，并允许接触插塞与硅化物区域充分接触。接触插塞和硅化物区域之间质量好，接触良好的硅化物提高了接触的收率，并使接触电阻达到可接受和可操作的范围。

6. 发明申请

US20120229174A1 OUTPUT STAGE CIRCUIT FOR OUTPUTTING A DRIVING CURRENT VARYING WITH A PROCESS 有权
标题翻译：用于输出驱动电流变化的输出电路
公开(公告)号：US20120229174A1
公开(公告)日：2012-09-13
申请号：US13099380
申请日：2011-05-03
申请人： Chun Shiah , Hao-Jan Yang , Ching-Ying Hsu
发明人： Chun Shiah , Hao-Jan Yang , Ching-Ying Hsu
IPC分类号： H03K3/00
CPC分类号： H03K19/018521 , H03K19/09482
摘要： An output stage circuit includes a first P-type metal-oxide-semiconductor transistor, a second P-type metal-oxide-semiconductor transistor, an N-type metal-oxide-semiconductor transistor, and a current source. A voltage of a third terminal of the first P-type metal-oxide-semiconductor transistor is a first voltage minus a voltage drop between a first terminal and a second terminal of the first P-type metal-oxide-semiconductor transistor. The N-type metal-oxide-semiconductor transistor is coupled between the third terminal of the first P-type metal-oxide-semiconductor transistor and the current source. A second terminal of the second P-type metal-oxide-semiconductor transistor is coupled to the third terminal of the first P-type metal-oxide-semiconductor transistor. When a second terminal of the N-type metal-oxide-semiconductor transistor receives a kick signal, a driving current flowing through the second P-type metal-oxide-semiconductor transistor is relevant to the voltage of the third terminal of the first P-type metal-oxide-semiconductor transistor.
摘要翻译：输出级电路包括第一P型金属氧化物半导体晶体管，第二P型金属氧化物半导体晶体管，N型金属氧化物半导体晶体管和电流源。第一P型金属氧化物半导体晶体管的第三端子的电压是第一电压减去第一P型金属氧化物半导体晶体管的第一端子和第二端子之间的电压降。 N型金属氧化物半导体晶体管耦合在第一P型金属氧化物半导体晶体管的第三端子与电流源之间。第二P型金属氧化物半导体晶体管的第二端子耦合到第一P型金属氧化物半导体晶体管的第三端子。当N型金属氧化物半导体晶体管的第二端子接收到反冲信号时，流过第二P型金属氧化物半导体晶体管的驱动电流与第一P型金属氧化物半导体晶体管的第三端子的电压相关，型金属氧化物半导体晶体管。

7. 发明申请

US20120227917A1 HOLLOW SLAT 审中-公开
公开(公告)号：US20120227917A1
公开(公告)日：2012-09-13
申请号：US13042277
申请日：2011-03-07
申请人： WEN-YING LIANG , Sheng Ying Hsu
发明人： WEN-YING LIANG , Sheng Ying Hsu
IPC分类号： E06B9/386
CPC分类号： E06B9/386 , E06B9/266
摘要： A hollow slat includes an elongate body having a space defined therein and two ends of the elongate body are two closed ends. At least two through holes are defined through top and bottom surfaces of the elongate body and each through hole has a peripheral wall which is connected between the top and bottom surfaces of the elongate body such that the through holes are not in communication with the space in the elongate body.
摘要翻译：中空板条包括具有限定在其中的空间的细长主体，细长主体的两端是两个封闭端。至少两个通孔被限定在细长主体的顶表面和底表面之间，并且每个通孔具有连接在细长主体的顶表面和底表面之间的周壁，使得通孔不与空间连通细长的身体。

8. 发明授权

US08060741B2 System and method for wireless mobile network authentication 有权
标题翻译：无线移动网络认证的系统和方法
公开(公告)号：US08060741B2
公开(公告)日：2011-11-15
申请号：US11889466
申请日：2007-08-13
申请人： Jui-Tang Wang , Yuan-Ying Hsu , Jen-Shun Yang , Chien-Chao Tseng
发明人： Jui-Tang Wang , Yuan-Ying Hsu , Jen-Shun Yang , Chien-Chao Tseng
IPC分类号： H04L29/06
CPC分类号： H04L9/0833 , H04L9/3255 , H04L2209/80
摘要： A method for operating a wireless communication system including a mobile relay station group, a base station group, and an authentication server, includes: configuring, by the authentication server, group information into the mobile relay station group and the base station group; requesting, by the base station group, group authentication data for the mobile relay station group from the authentication server; and performing authentication between a member of the mobile relay station group and a member of the base station group and generating an authentication key individually by the member of the mobile relay station group and the member of the base station group. Also disclosed is a system for carrying out the method.
摘要翻译：一种用于操作包括移动中继站组，基站组和认证服务器的无线通信系统的方法，包括：通过认证服务器将组信息配置到移动中继站组和基站组中; 由所述基站组向所述认证服务器请求所述移动中继站组的组认证数据; 以及在所述移动中继站组的成员和所述基站组的成员之间执行认证，并且由所述移动中继站组的成员和所述基站组的成员分别生成认证密钥。还公开了一种用于执行该方法的系统。

9. 发明授权

US08040823B2 Method and system for network data transmitting 有权
标题翻译：网络数据传输方法与系统
公开(公告)号：US08040823B2
公开(公告)日：2011-10-18
申请号：US11955582
申请日：2007-12-13
申请人： Tzu-Ming Lin , Yuan-Ying Hsu , Jen-Shun Yang , Jui-Tang Wang
发明人： Tzu-Ming Lin , Yuan-Ying Hsu , Jen-Shun Yang , Jui-Tang Wang
IPC分类号： H04L12/28
CPC分类号： H04L45/48 , H04L29/12254 , H04L45/02 , H04L45/46 , H04L45/742 , H04L61/2038 , H04W8/26 , H04W40/00
摘要： A method and system for network data transmitting in a communication system includes transmitting a data from at least one transmission node to at least one receiving node of a transmission-receiving group among the plurality of communication nodes by utilizing a node ID, the node ID of communication node in the group is being assigned by a N-carry operation of a determined number N.
摘要翻译：在通信系统中网络数据发送的方法和系统包括：通过利用节点ID，从多个通信节点中的至少一个发送节点向至少一个接收节点的接收节点发送数据，节点ID为组中的通信节点正通过确定数量N的N携带操作分配。

10. 发明申请

US20110237040A1 MAIN SPACER TRIM-BACK METHOD FOR REPLACEMENT GATE PROCESS 有权
标题翻译：用于替换门过程的主间隔三角法
公开(公告)号：US20110237040A1
公开(公告)日：2011-09-29
申请号：US12730375
申请日：2010-03-24
申请人： Jin-Aun NG , Yu-Ying HSU , Chi-Ju LEE , Sin-Hua WU , Bao-Ru YOUNG , Harry-Hak-Lay CHUANG
发明人： Jin-Aun NG , Yu-Ying HSU , Chi-Ju LEE , Sin-Hua WU , Bao-Ru YOUNG , Harry-Hak-Lay CHUANG
IPC分类号： H01L21/336
CPC分类号： H01L21/823425 , H01L21/823468 , H01L21/823475
摘要： The embodiments of methods described in this disclosure for trimming back nitride spacers for replacement gates allows the hard mask layers (or hard mask) to protect the polysilicon above the high-K dielectric during trim back process. The process sequence also allows determining the trim-back amount based on the process uniformity (or control) of nitride deposition and nitride etchback (or trimming) processes. Nitride spacer trim-back process integration is critical to avoid creating undesirable consequences, such as silicided polyisicon on top of high-K dielectric described above. The integrated process also allows widening the space between the gate structures to allow formation of silicide with good quality and allow contact plugs to have sufficient contact with the silicide regions. The silicide with good quality and good contact between the contact plugs and the silicide regions increase the yield of contact and allows the contact resistance to be in acceptable and workable ranges.
摘要翻译：在本公开中描述的用于修整用于替换栅极的氮化物间隔物的方法的实施例允许硬掩模层（或硬掩模）在修整回复工艺期间保护高K电介质上方的多晶硅。工艺顺序还允许基于氮化物沉积和氮化物回蚀（或修整）工艺的工艺均匀性（或控制）确定修剪量。氮化物间隔件后退工艺集成对于避免产生不期望的后果至关重要，例如上述高K电介质顶部的硅化聚异氰酸酯。集成的过程还允许扩大栅极结构之间的空间以允许形成具有良好质量的硅化物，并允许接触插塞与硅化物区域充分接触。接触插塞和硅化物区域之间质量好，接触良好的硅化物提高了接触的收率，并使接触电阻达到可接受和可操作的范围。

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