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1. 发明申请

US20110210403A1 NOVEL STRUCTURES AND METHODS TO STOP CONTACT METAL FROM EXTRUDING INTO REPLACEMENT GATES 有权
标题翻译：新的结构和方法阻止接触金属从排出到更换浇口
公开(公告)号：US20110210403A1
公开(公告)日：2011-09-01
申请号：US12713395
申请日：2010-02-26
申请人： Lee-Wee TEO , Ming Zhu , Chi-Ju Lee , Sheng-Chen Chung , Kai-Shyang You , Harry-Hak-Lay Chuang
发明人： Lee-Wee TEO , Ming Zhu , Chi-Ju Lee , Sheng-Chen Chung , Kai-Shyang You , Harry-Hak-Lay Chuang
IPC分类号： H01L29/78 , H01L21/768
CPC分类号： H01L29/66545 , H01L21/823842 , H01L29/4966 , H01L29/78
摘要： The methods and structures described are used to prevent protrusion of contact metal (such as W) horizontally into gate stacks of neighboring devices to affect the work functions of these neighboring devices. The metal gate under contact plugs that are adjacent to devices and share the (or are connected to) metal gate is defined and lined with a work function layer that has good step coverage to prevent contact metal from extruding into gate stacks of neighboring devices. Only modification to the mask layout for the photomask(s) used for removing dummy polysilicon is involved. No additional lithographical operation or mask is needed. Therefore, no modification to the manufacturing processes or additional substrate processing steps (or operations) is involved or required. The benefits of using the methods and structures described above may include increased device yield and performance.
摘要翻译：所描述的方法和结构用于防止接触金属（例如W）水平地突出到相邻设备的门堆叠中，以影响这些相邻设备的功能。定义了与设备相邻并且共享（或连接到）金属栅极的接触插塞下面的金属栅，并且衬有具有良好阶梯覆盖的功函数层，以防止接触金属挤出到相邻器件的栅极堆叠中。仅涉及用于去除伪多晶硅的光掩模的掩模布局的修改。不需要额外的光刻操作或掩模。因此，不涉及制造工艺或附加的基板处理步骤（或操作）的修改。使用上述方法和结构的好处可以包括提高器件产量和性能。

2. 发明授权

US08343867B2 Method for main spacer trim-back 有权
标题翻译：主间隔装饰方法
公开(公告)号：US08343867B2
公开(公告)日：2013-01-01
申请号：US13234674
申请日：2011-09-16
申请人： Jin-Aun Ng , Yu-Ying Hsu , Chi-Ju Lee , Sin-Hua Wu , Bao-Ru Young , Harry-Hak-Lay Chuang
发明人： Jin-Aun Ng , Yu-Ying Hsu , Chi-Ju Lee , Sin-Hua Wu , Bao-Ru Young , Harry-Hak-Lay Chuang
IPC分类号： H01L21/4763
CPC分类号： H01L21/823425 , H01L21/823468 , H01L21/823475
摘要： The embodiments of methods described in this disclosure for trimming back nitride spacers for replacement gates allows the hard mask layers (or hard mask) to protect the polysilicon above the high-K dielectric during trim back process. The process sequence also allows determining the trim-back amount based on the process uniformity (or control) of nitride deposition and nitride etchback (or trimming) processes. Nitride spacer trim-back process integration is critical to avoid creating undesirable consequences, such as silicided polyisicon on top of high-K dielectric described above. The integrated process also allows widening the space between the gate structures to allow formation of silicide with good quality and allow contact plugs to have sufficient contact with the silicide regions. The silicide with good quality and good contact between the contact plugs and the silicide regions increase the yield of contact and allows the contact resistance to be in acceptable and workable ranges.
摘要翻译：在本公开中描述的用于修整用于替换栅极的氮化物间隔物的方法的实施例允许硬掩模层（或硬掩模）在修整回复工艺期间保护高K电介质上方的多晶硅。工艺顺序还允许基于氮化物沉积和氮化物回蚀（或修整）工艺的工艺均匀性（或控制）确定修剪量。氮化物间隔件后退工艺集成对于避免产生不期望的后果至关重要，例如上述高K电介质顶部的硅化聚异氰酸酯。集成的过程还允许扩大栅极结构之间的空间以允许形成具有良好质量的硅化物，并允许接触插塞与硅化物区域充分接触。接触插塞和硅化物区域之间质量好，接触良好的硅化物提高了接触的收率，并使接触电阻达到可接受和可操作的范围。

3. 发明申请

US20110237040A1 MAIN SPACER TRIM-BACK METHOD FOR REPLACEMENT GATE PROCESS 有权
标题翻译：用于替换门过程的主间隔三角法
公开(公告)号：US20110237040A1
公开(公告)日：2011-09-29
申请号：US12730375
申请日：2010-03-24
申请人： Jin-Aun NG , Yu-Ying HSU , Chi-Ju LEE , Sin-Hua WU , Bao-Ru YOUNG , Harry-Hak-Lay CHUANG
发明人： Jin-Aun NG , Yu-Ying HSU , Chi-Ju LEE , Sin-Hua WU , Bao-Ru YOUNG , Harry-Hak-Lay CHUANG
IPC分类号： H01L21/336
CPC分类号： H01L21/823425 , H01L21/823468 , H01L21/823475
摘要： The embodiments of methods described in this disclosure for trimming back nitride spacers for replacement gates allows the hard mask layers (or hard mask) to protect the polysilicon above the high-K dielectric during trim back process. The process sequence also allows determining the trim-back amount based on the process uniformity (or control) of nitride deposition and nitride etchback (or trimming) processes. Nitride spacer trim-back process integration is critical to avoid creating undesirable consequences, such as silicided polyisicon on top of high-K dielectric described above. The integrated process also allows widening the space between the gate structures to allow formation of silicide with good quality and allow contact plugs to have sufficient contact with the silicide regions. The silicide with good quality and good contact between the contact plugs and the silicide regions increase the yield of contact and allows the contact resistance to be in acceptable and workable ranges.
摘要翻译：在本公开中描述的用于修整用于替换栅极的氮化物间隔物的方法的实施例允许硬掩模层（或硬掩模）在修整回复工艺期间保护高K电介质上方的多晶硅。工艺顺序还允许基于氮化物沉积和氮化物回蚀（或修整）工艺的工艺均匀性（或控制）确定修剪量。氮化物间隔件后退工艺集成对于避免产生不期望的后果至关重要，例如上述高K电介质顶部的硅化聚异氰酸酯。集成的过程还允许扩大栅极结构之间的空间以允许形成具有良好质量的硅化物，并允许接触插塞与硅化物区域充分接触。接触插塞和硅化物区域之间质量好，接触良好的硅化物提高了接触的收率，并使接触电阻达到可接受和可操作的范围。

4. 发明授权

US08525270B2 Structures and methods to stop contact metal from extruding into replacement gates 有权
标题翻译：阻止接触金属挤压成替换门的结构和方法
公开(公告)号：US08525270B2
公开(公告)日：2013-09-03
申请号：US12713395
申请日：2010-02-26
申请人： Lee-Wee Teo , Ming Zhu , Chi-Ju Lee , Sheng-Chen Chung , Kai-Shyang You , Harry-Hak-Lay Chuang
发明人： Lee-Wee Teo , Ming Zhu , Chi-Ju Lee , Sheng-Chen Chung , Kai-Shyang You , Harry-Hak-Lay Chuang
IPC分类号： H01L21/70
CPC分类号： H01L29/66545 , H01L21/823842 , H01L29/4966 , H01L29/78
摘要： The methods and structures described are used to prevent protrusion of contact metal (such as W) horizontally into gate stacks of neighboring devices to affect the work functions of these neighboring devices. The metal gate under contact plugs that are adjacent to devices and share the (or are connected to) metal gate is defined and lined with a work function layer that has good step coverage to prevent contact metal from extruding into gate stacks of neighboring devices. Only modification to the mask layout for the photomask(s) used for removing dummy polysilicon is involved. No additional lithographical operation or mask is needed. Therefore, no modification to the manufacturing processes or additional substrate processing steps (or operations) is involved or required. The benefits of using the methods and structures described above may include increased device yield and performance.
摘要翻译：所描述的方法和结构用于防止接触金属（例如W）水平地突出到相邻设备的门堆叠中，以影响这些相邻设备的功能。定义了与设备相邻并且共享（或连接到）金属栅极的接触插塞下面的金属栅，并且衬有具有良好阶梯覆盖的功函数层，以防止接触金属挤出到相邻器件的栅极堆叠中。仅涉及用于去除伪多晶硅的光掩模的掩模布局的修改。不需要额外的光刻操作或掩模。因此，不涉及制造工艺或附加的基板处理步骤（或操作）的修改。使用上述方法和结构的好处可以包括提高器件产量和性能。

5. 发明授权

US08039388B1 Main spacer trim-back method for replacement gate process 有权
标题翻译：替代浇口工艺的主要间隔件修剪方法
公开(公告)号：US08039388B1
公开(公告)日：2011-10-18
申请号：US12730375
申请日：2010-03-24
申请人： Jin-Aun Ng , Yu-Ying Hsu , Chi-Ju Lee , Sin-Hua Wu , Bao-Ru Young , Harry-Hak-Lay Chuang
发明人： Jin-Aun Ng , Yu-Ying Hsu , Chi-Ju Lee , Sin-Hua Wu , Bao-Ru Young , Harry-Hak-Lay Chuang
IPC分类号： H01L21/4763
CPC分类号： H01L21/823425 , H01L21/823468 , H01L21/823475
摘要： The embodiments of methods described in this disclosure for trimming back nitride spacers for replacement gates allows the hard mask layers (or hard mask) to protect the polysilicon above the high-K dielectric during trim back process. The process sequence also allows determining the trim-back amount based on the process uniformity (or control) of nitride deposition and nitride etchback (or trimming) processes. Nitride spacer trim-back process integration is critical to avoid creating undesirable consequences, such as silicided polyisicon on top of high-K dielectric described above. The integrated process also allows widening the space between the gate structures to allow formation of silicide with good quality and allow contact plugs to have sufficient contact with the silicide regions. The silicide with good quality and good contact between the contact plugs and the silicide regions increase the yield of contact and allows the contact resistance to be in acceptable and workable ranges.
摘要翻译：在本公开中描述的用于修整用于替换栅极的氮化物间隔物的方法的实施例允许硬掩模层（或硬掩模）在修整回复工艺期间保护高K电介质上方的多晶硅。工艺顺序还允许基于氮化物沉积和氮化物回蚀（或修整）工艺的工艺均匀性（或控制）确定修剪量。氮化物间隔件后退工艺集成对于避免产生不期望的后果至关重要，例如上述高K电介质顶部的硅化聚异氰酸酯。集成的过程还允许扩大栅极结构之间的空间以允许形成具有良好质量的硅化物，并允许接触插塞与硅化物区域充分接触。接触插塞和硅化物区域之间质量好，接触良好的硅化物提高了接触的收率，并使接触电阻达到可接受和可操作的范围。

6. 发明申请

US20090077774A1 Slide fastener device having warning device 审中-公开
标题翻译：具有警告装置的滑动装置
公开(公告)号：US20090077774A1
公开(公告)日：2009-03-26
申请号：US11903545
申请日：2007-09-21
申请人： Chi Ju Lee , Chi Feng Feng , Leo Lin
发明人： Chi Ju Lee , Chi Feng Feng , Leo Lin
IPC分类号： A44B19/24 , G08B21/18
CPC分类号： G08B3/10 , A44B19/30 , Y10T24/25
摘要： A fastener device includes two fastening elements, one or more slider members slidably engaged onto the fastening elements for securing the fastening elements together, and a warning device having a detecting device which may include two detecting members attached to either of the slider members or a support member and selectively engageable with other, and a signal generating device coupled to the detecting device for generating a warning signal when the detecting members have not been contacted with each other and for preventing the fastener device from being opened by unauthorized persons.
摘要翻译：紧固件装置包括两个紧固元件，一个或多个可滑动地接合到紧固元件上的滑块，用于将紧固元件固定在一起，以及具有检测装置的报警装置，该检测装置可以包括附接到滑动件中的任一个的支承件构件，并且可选择地与其他构件接合;以及耦合到检测装置的信号发生装置，用于当检测构件没有彼此接触并且用于防止紧固件装置被未经授权的人打开时产生警告信号。

7. 发明申请

US20120009754A1 METHOD FOR MAIN SPACER TRIM-BACK 有权
标题翻译：主要间距方法
公开(公告)号：US20120009754A1
公开(公告)日：2012-01-12
申请号：US13234674
申请日：2011-09-16
申请人： Jin-Aun NG , Yu-Ying HSU , Chi-Ju LEE , Sin-Hua WU , Bao-Ru YOUNG , Harry-Hak-Lay CHUANG
发明人： Jin-Aun NG , Yu-Ying HSU , Chi-Ju LEE , Sin-Hua WU , Bao-Ru YOUNG , Harry-Hak-Lay CHUANG
IPC分类号： H01L21/336
CPC分类号： H01L21/823425 , H01L21/823468 , H01L21/823475
摘要： The embodiments of methods described in this disclosure for trimming back nitride spacers for replacement gates allows the hard mask layers (or hard mask) to protect the polysilicon above the high-K dielectric during trim back process. The process sequence also allows determining the trim-back amount based on the process uniformity (or control) of nitride deposition and nitride etchback (or trimming) processes. Nitride spacer trim-back process integration is critical to avoid creating undesirable consequences, such as silicided polyisicon on top of high-K dielectric described above. The integrated process also allows widening the space between the gate structures to allow formation of silicide with good quality and allow contact plugs to have sufficient contact with the silicide regions. The silicide with good quality and good contact between the contact plugs and the silicide regions increase the yield of contact and allows the contact resistance to be in acceptable and workable ranges.
摘要翻译：在本公开中描述的用于修整用于替换栅极的氮化物间隔物的方法的实施例允许硬掩模层（或硬掩模）在修整回复工艺期间保护高K电介质上方的多晶硅。工艺顺序还允许基于氮化物沉积和氮化物回蚀（或修整）工艺的工艺均匀性（或控制）确定修剪量。氮化物间隔件后退工艺集成对于避免产生不期望的后果至关重要，例如上述高K电介质顶部的硅化聚异氰酸酯。集成的过程还允许扩大栅极结构之间的空间以允许形成具有良好质量的硅化物，并允许接触插塞与硅化物区域充分接触。接触插塞和硅化物区域之间质量好，接触良好的硅化物提高了接触的收率，并使接触电阻达到可接受和可操作的范围。

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