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1. 发明申请

US20120229174A1 OUTPUT STAGE CIRCUIT FOR OUTPUTTING A DRIVING CURRENT VARYING WITH A PROCESS 有权
标题翻译：用于输出驱动电流变化的输出电路
公开(公告)号：US20120229174A1
公开(公告)日：2012-09-13
申请号：US13099380
申请日：2011-05-03
申请人： Chun Shiah , Hao-Jan Yang , Ching-Ying Hsu
发明人： Chun Shiah , Hao-Jan Yang , Ching-Ying Hsu
IPC分类号： H03K3/00
CPC分类号： H03K19/018521 , H03K19/09482
摘要： An output stage circuit includes a first P-type metal-oxide-semiconductor transistor, a second P-type metal-oxide-semiconductor transistor, an N-type metal-oxide-semiconductor transistor, and a current source. A voltage of a third terminal of the first P-type metal-oxide-semiconductor transistor is a first voltage minus a voltage drop between a first terminal and a second terminal of the first P-type metal-oxide-semiconductor transistor. The N-type metal-oxide-semiconductor transistor is coupled between the third terminal of the first P-type metal-oxide-semiconductor transistor and the current source. A second terminal of the second P-type metal-oxide-semiconductor transistor is coupled to the third terminal of the first P-type metal-oxide-semiconductor transistor. When a second terminal of the N-type metal-oxide-semiconductor transistor receives a kick signal, a driving current flowing through the second P-type metal-oxide-semiconductor transistor is relevant to the voltage of the third terminal of the first P-type metal-oxide-semiconductor transistor.
摘要翻译：输出级电路包括第一P型金属氧化物半导体晶体管，第二P型金属氧化物半导体晶体管，N型金属氧化物半导体晶体管和电流源。第一P型金属氧化物半导体晶体管的第三端子的电压是第一电压减去第一P型金属氧化物半导体晶体管的第一端子和第二端子之间的电压降。 N型金属氧化物半导体晶体管耦合在第一P型金属氧化物半导体晶体管的第三端子与电流源之间。第二P型金属氧化物半导体晶体管的第二端子耦合到第一P型金属氧化物半导体晶体管的第三端子。当N型金属氧化物半导体晶体管的第二端子接收到反冲信号时，流过第二P型金属氧化物半导体晶体管的驱动电流与第一P型金属氧化物半导体晶体管的第三端子的电压相关，型金属氧化物半导体晶体管。

2. 发明授权

US08536903B2 Output stage circuit for outputting a driving current varying with a process 有权
标题翻译：用于输出随工艺变化的驱动电流的输出级电路
公开(公告)号：US08536903B2
公开(公告)日：2013-09-17
申请号：US13099380
申请日：2011-05-03
申请人： Chun Shiah , Hao-Jan Yang , Ching-Ying Hsu
发明人： Chun Shiah , Hao-Jan Yang , Ching-Ying Hsu
IPC分类号： H03B19/06
CPC分类号： H03K19/018521 , H03K19/09482
摘要： An output stage circuit includes a first P-type metal-oxide-semiconductor transistor, a second P-type metal-oxide-semiconductor transistor, an N-type metal-oxide-semiconductor transistor, and a current source. A voltage of a third terminal of the first P-type metal-oxide-semiconductor transistor is a first voltage minus a voltage drop between a first terminal and a second terminal of the first P-type metal-oxide-semiconductor transistor. The N-type metal-oxide-semiconductor transistor is coupled between the third terminal of the first P-type metal-oxide-semiconductor transistor and the current source. A second terminal of the second P-type metal-oxide-semiconductor transistor is coupled to the third terminal of the first P-type metal-oxide-semiconductor transistor. When a second terminal of the N-type metal-oxide-semiconductor transistor receives a kick signal, a driving current flowing through the second P-type metal-oxide-semiconductor transistor is relevant to the voltage of the third terminal of the first P-type metal-oxide-semiconductor transistor.
摘要翻译：输出级电路包括第一P型金属氧化物半导体晶体管，第二P型金属氧化物半导体晶体管，N型金属氧化物半导体晶体管和电流源。第一P型金属氧化物半导体晶体管的第三端子的电压是第一电压减去第一P型金属氧化物半导体晶体管的第一端子和第二端子之间的电压降。 N型金属氧化物半导体晶体管耦合在第一P型金属氧化物半导体晶体管的第三端子与电流源之间。第二P型金属氧化物半导体晶体管的第二端子耦合到第一P型金属氧化物半导体晶体管的第三端子。当N型金属氧化物半导体晶体管的第二端子接收到反冲信号时，流过第二P型金属氧化物半导体晶体管的驱动电流与第一P型金属氧化物半导体晶体管的第三端子的电压相关，型金属氧化物半导体晶体管。

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