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1. 发明授权

US09089195B2 Automatic hair washing apparatus 有权
标题翻译：自动洗发器
公开(公告)号：US09089195B2
公开(公告)日：2015-07-28
申请号：US13816979
申请日：2011-08-15
申请人： Osamu Mizuno , Soichiro Fujioka , Tohru Nakamura , Akinobu Okuda , Tsuyoshi Tojo
发明人： Osamu Mizuno , Soichiro Fujioka , Tohru Nakamura , Akinobu Okuda , Tsuyoshi Tojo
IPC分类号： A45D19/14 , A45D19/02 , A45D19/00
CPC分类号： A45D19/14 , A45D19/02 , A45D2019/005
摘要： Provided is an automatic hair washing apparatus for washing person's hair in a safe and effective manner without applying a straining force on person's neck. An automatic hair washing apparatus 100 comprises a bowl 101 having a head support 11; washing units 12L and 12R arranged with the head support 11 interposed therebetween, the support shafts thereof being attached to the bowl 101; a driving section for rotating the washing units 12L and 12R about the respective support shafts 104L and 104R; and a control section for controlling the driving of the driving section; wherein each of the washing units 12L and 12R comprises a plurality of contacts 109 on a surface opposite to the surface supported by the support shaft 104L and 104R.
摘要翻译：本发明提供一种自动洗发装置，以安全有效的方式洗涤人的头发，而不会对人的颈部施加紧张力。自动洗发装置100包括具有头部支撑件11的碗101; 洗涤单元12L和12R与头部支撑件11插入在其间，其支撑轴安装在碗101上; 用于使洗涤单元12L和12R围绕各个支撑轴104L和104R旋转的驱动部分; 以及控制部分，用于控制驱动部分的驱动; 其中每个洗涤单元12L和12R在与由支撑轴104L和104R支撑的表面相对的表面上包括多个触点109。

2. 发明申请

US20100318224A1 MANIPULATOR AND METHOD OF CONTROLLING THE SAME 有权
标题翻译：操纵器及其控制方法
公开(公告)号：US20100318224A1
公开(公告)日：2010-12-16
申请号：US12866959
申请日：2009-03-05
申请人： Akinobu Okuda , Soichiro Fujioka , Osamu Mizuno , Yoshihiko Matsukawa , Tsuyoshi Tojo , Rie Takahashi , Tohru Nakamura
发明人： Akinobu Okuda , Soichiro Fujioka , Osamu Mizuno , Yoshihiko Matsukawa , Tsuyoshi Tojo , Rie Takahashi , Tohru Nakamura
IPC分类号： B25J13/08 , B25J17/02 , B25J18/00 , B25J9/00 , G05B15/00 , G06F19/00 , B25J19/06
CPC分类号： B25J9/1676 , G05B2219/39082 , Y10T74/20329
摘要： A manipulator is provided with an arm, an arm, a holding section, a first joint section pivotally interconnecting the arm and the arm, a second joint section pivotally interconnecting the arm and the holding section, a first joint driving section capable of driving the first joint section, a second joint driving section capable of driving the second joint section, a member specifying section for specifying one of the arms which has a possibility of collision with an obstacle or which has collided with the obstacle, and a control device for controlling the first joint driving section and the second joint driving section to pivotally move the one of the arms specified by the member specifying section in a direction away from the obstacle, and pivotally move the other of the arms in a direction toward the obstacle.
摘要翻译：操纵器具有臂，臂，保持部，枢转地互连臂和臂的第一接合部，将臂和保持部枢转地相互连接的第二接头部，能够驱动第一接头的第一接头驱动部接合部，能够驱动第二接合部的第二关节驱动部，用于指定具有与障碍物碰撞的可能性或与障碍物碰撞的一个臂的部件指定部，以及用于控制第一关节驱动部和第二关节驱动部，用于使远离障碍物的方向枢转地移动由构件指定部指定的臂中的一个臂，并且使臂中的另一个朝向障碍物的方向。

3. 发明申请

US20090312868A1 MANIPULATOR AND MANIPULATOR POSTURE CONTROL METHOD 有权
标题翻译：操纵器和操纵器姿态控制方法
公开(公告)号：US20090312868A1
公开(公告)日：2009-12-17
申请号：US12480973
申请日：2009-06-09
申请人： Tsuyoshi TOJO , Osamu Mizuno , Akinobu Okuda , Yoshihiko Matsukawa , Rie Takahashi , Soichiro Fujioka , Tohru Nakamura
发明人： Tsuyoshi TOJO , Osamu Mizuno , Akinobu Okuda , Yoshihiko Matsukawa , Rie Takahashi , Soichiro Fujioka , Tohru Nakamura
IPC分类号： G06F19/00
CPC分类号： B25J9/1676
摘要： It is aimed to provide a manipulator capable of reducing a colliding force exerted to an obstacle even in the case where the manipulator collides without being able to avoid a collision with the obstacle.A manipulator 1 includes an arm unit 3 rotatably provided on a main unit 2. A posture detector 10 executes a control to incline the arm unit 3 obliquely backward with respect to a moving direction P when the main unit 2 of the manipulator 1 is moved. Thus, the arm unit 3 collides with an obstacle 11 in an inclined state, wherefore a colliding force exerted to the obstacle 11 can be distributed.
摘要翻译：目的在于提供一种即使在机械手碰撞而不能避免与障碍物碰撞的情况下也能够减小施加于障碍物的碰撞力的机械手。机械手1包括可旋转地设置在主单元2上的臂单元3.姿态检测器10执行使得当机械手1的主单元2移动时相对于移动方向P向后倾斜的臂单元3的控制。因此，臂单元3以倾斜状态与障碍物11碰撞，由此可以分配施加到障碍物11的碰撞力。

4. 发明申请

US20080108160A1 Semiconductor Light Emitting Device, Its Manufacturing Method, Semiconductor Device and Its Manufacturing Method 有权
标题翻译：半导体发光器件及其制造方法，半导体器件及其制造方法
公开(公告)号：US20080108160A1
公开(公告)日：2008-05-08
申请号：US11969088
申请日：2008-01-03
申请人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
发明人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
IPC分类号： H01L33/00
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/0425 , H01S5/2004 , H01S5/2013 , H01S5/3201 , H01S5/34333 , H01S2301/173 , H01S2304/12
摘要： A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.
摘要翻译：由氮化物III-V化合物半导体制成的半导体发光器件包括由In和Ga等InGaN的第一氮化物III-V化合物半导体构成的有源层; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。

5. 发明授权

US06954477B2 Semiconductor laser device and fabrication method thereof 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US06954477B2
公开(公告)日：2005-10-11
申请号：US10821342
申请日：2004-04-09
申请人： Shiro Uchida , Tsuyoshi Tojo
发明人： Shiro Uchida , Tsuyoshi Tojo
IPC分类号： H01S5/042 , H01S5/22 , H01S5/00
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/2213
摘要： A method of fabricating a ridge-waveguide type semiconductor laser device having a large half-value width and a high kink level is provided. First, an effective refractive index difference Δn between an effective refractive index neff1 of the ridge and an effective refractive index neff2 of a portion on each of both sides of the ridge is taken as Δn=neff1−neff2, and a ridge width is taken as W. On such an assumption, constants “a”, “b”, “c”, and “d” of the following three equations are set on X-Y coordinates (X-axis: W, Y-axis: Δn) The first equation is expressed by Δn≦a×W+b, where “a” and “b” are constants determining a kink level. The second equation is expressed by W≧c, where “c” is a constant specifying a minimum ridge width at the time of formation of the ridge. The third equation is expressed by Δn≧d, where “d” is a constant specified by a desired half-width value θpara. Then at least either of a kind and a thickness of an insulating film, a thickness of an electrode film on the insulating film, and a kind and a thickness of a portion, located on each of both the sides of the ridge, of the upper cladding layer is set in such a manner that a combination of Δn and W satisfies the above three equations.
摘要翻译：提供一种制造具有大的半值宽度和高扭结等级的脊 - 波导型半导体激光器件的方法。首先，脊的两侧的部分的有效折射率nλeff1 <！ - SIPO - >的有效折射率差值Deltan，被取为Deltan = n eff1 eff2 ，并且脊宽度取为W.在这样的假设下，常数“a”，“b”，“c 在XY坐标（X轴：W，Y轴：Deltan）上设置以下三个方程的“d”和“d”。第一方程由Deltan <= axW + b表示，其中“a”和“b” 是确定扭结水平的常数。第二方程用W> = c表示，其中“c”是指定形成脊时的最小脊宽度的常数。第三个方程由Deltan> = d表示，其中“d”是由期望的半角值θ指定的常数。然后，将绝缘膜的种类和厚度，绝缘膜上的电极膜的厚度和位于隆起的两侧的每一侧上的部分的种类和厚度中的至少一个，上部以如下方式设置包层：Deltan和W的组合满足上述三个等式。

6. 发明授权

US06721342B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US06721342B2
公开(公告)日：2004-04-13
申请号：US10342984
申请日：2003-01-15
申请人： Yoshifumi Yabuki , Tsuyoshi Tojo
发明人： Yoshifumi Yabuki , Tsuyoshi Tojo
IPC分类号： H01S304
CPC分类号： H01S5/4031 , H01S5/0014 , H01S5/0224 , H01S5/02252 , H01S5/02276 , H01S5/02469 , H01S5/02476 , H01S5/32341
摘要： Disclosed is an array type semiconductor laser device including a plurality of semiconductor laser chips each of which has an active layer for forming a light emitting point, wherein the semiconductor laser chips are arrayed on the same substrate in such a manner as to be spaced from each other at intervals. In this laser device, an array configuration of the semiconductor laser chips is specified such that a gap between arbitrary adjacent two laser chips located inwardly from both outermost laser chips positioned at both the edges of the semiconductor laser device is wider than a gap between each of said outermost laser chips and an LD chip adjacent thereto. This laser device is advantageous in reducing the effect of thermal interference mutually exerted on the laser chips, thereby ensuring a thermal uniformity over the entire laser chips.
摘要翻译：公开了一种阵列型半导体激光器件，其包括多个半导体激光器芯片，每个半导体激光器芯片具有用于形成发光点的有源层，其中半导体激光器芯片以与每个半导体激光器芯片间隔开的方式排列在同一基板上其他的间隔。在该激光装置中，规定了半导体激光芯片的阵列结构，使得位于半导体激光装置的两端的两个最外侧的激光芯片的位于内侧的任意相邻的两个激光芯片之间的间隙宽于所述最外面的激光芯片和与其相邻的LD芯片。该激光装置有利于减少相互施加在激光芯片上的热干扰的影响，从而确保整个激光芯片的热均匀性。

7. 发明授权

US06455342B2 Semiconductor device, its manufacturing method and substrate for manufacturing a semiconductor device 有权
标题翻译：半导体装置及其制造方法以及半导体装置的制造用基板
公开(公告)号：US06455342B2
公开(公告)日：2002-09-24
申请号：US09840199
申请日：2001-04-23
申请人： Toshimasa Kobayashi , Tsuyoshi Tojo
发明人： Toshimasa Kobayashi , Tsuyoshi Tojo
IPC分类号： H01L2100
CPC分类号： H01L33/0095 , H01L29/045 , H01L33/007 , H01S5/0201 , H01S5/0202 , H01S5/0213 , H01S5/32341
摘要： It is intended to provide a semiconductor device, its manufacturing method and substrate for manufacturing the semiconductor device which ensures that good cleavable surfaces be made stably in a semiconductor layer under precise control upon making edges of cleaves surfaces in the semiconductor layer stacked on a substrate even when the substrate is non-cleavable, difficult to cleave or different in cleavable orientation from the semiconductor layer. A semiconductor layer 2 made of III-V compound semiconductors is stacked to form a laser structure on a sapphire substrate 1. In selective locations other than the location of a ridge stripe portion 11 and a mesa portion 12 along a portion of a semiconductor layer 2 where a cavity edge 3 should be made, namely, in locations at opposite sides of the mesa portion 12, stripe-shaped cleavage-assist grooves 4 are made to extend in parallel to the (11-20)-oriented surface of the semiconductor layer 2, and the semiconductor layer 2 and the sapphire substrate 1 are cleaved from the cleavage-assist groove 4 to make the cavity edge 3 made up of the cleavable surface of the semiconductor layer 2.
摘要翻译：旨在提供一种用于制造半导体器件的半导体器件，其制造方法和用于制造半导体器件的衬底，其确保了在半导体层中的层叠在衬底上的裂纹表面的边缘上，在精确控制下，在半导体层中稳定地制备良好的可切割表面当衬底不可切割时，难以从半导体层切割或不同于可切割取向。层叠由III-V族化合物半导体构成的半导体层2，以在蓝宝石基板1上形成激光结构。在沿着半导体层2的一部分的棱条部11和台面部12的位置以外的选择位置其中应当制造空腔边缘3，即在台面部分12的相对侧的位置处，条形切割辅助槽4被制成平行于半导体层的（11-20）取向的表面延伸 2，并且半导体层2和蓝宝石衬底1从解理辅助槽4断裂，以形成由半导体层2的可切割表面构成的空腔边缘3。

8. 发明授权

US06323059B1 Method of fabricating a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06323059B1
公开(公告)日：2001-11-27
申请号：US09550209
申请日：2000-04-17
申请人： Hiroshi Yoshida , Tsuyoshi Tojo , Masafumi Ozawa
发明人： Hiroshi Yoshida , Tsuyoshi Tojo , Masafumi Ozawa
IPC分类号： H01L2148
CPC分类号： H01S5/02212 , B82Y20/00 , H01L2224/48091 , H01S5/0207 , H01S5/0224 , H01S5/02252 , H01S5/02272 , H01S5/02469 , H01S5/32341 , H01S5/34313 , H01S5/34333 , H01S5/4031 , H01S2304/12 , H01L2924/00014
摘要： A conductive mounting board provided in a package has recessed portion and a projecting portion, and an insulating mounting board is disposed on the recessed portion. The insulating mounting board is disposed on the recessed portion. The insulating mounting board has an insulating board on the surface of which a wiring portion is disposed. A semiconductor laser, constituted by stacked semiconductor layers each being made from a compound semiconductor composed of a group III based nitride, is disposed on the insulating mounting board and the conductive mounting board. An n-side electrode of the semiconductor laser is in contact with the insulating mounting board and a p-side electrode thereof is in contact with the conductive mounting board.
摘要翻译：设置在封装体中的导电性安装板具有凹部和突出部，绝缘安装基板设置在凹部上。绝缘安装板设置在凹部上。绝缘安装板在其表面上设置有布线部分的绝缘板。由绝缘安装基板和导电性安装基板配置由层叠半导体层构成的半导体激光器，其由由III族氮化物构成的复合半导体构成。半导体激光器的n侧电极与绝缘安装基板接触，其p侧电极与导电性安装基板接触。

9. 发明授权

US08647305B2 Syringe drive device 有权
标题翻译：注射器驱动装置
公开(公告)号：US08647305B2
公开(公告)日：2014-02-11
申请号：US13257338
申请日：2010-03-23
申请人： Akihiro Ohta , Tohru Nakamura , Osamu Mizuno , Soichiro Fujioka , Akinobu Okuda , Tsuyoshi Tojo
发明人： Akihiro Ohta , Tohru Nakamura , Osamu Mizuno , Soichiro Fujioka , Akinobu Okuda , Tsuyoshi Tojo
IPC分类号： A61M5/00
CPC分类号： A61M5/007 , A61M5/1407 , A61M5/14546 , A61M5/1456 , A61M5/1782 , A61M2005/1403
摘要： A syringe drive device drives a syringe including a cylindrical cylinder and a piston. The cylinder includes a solution supply port at one end, and an opening at the other end. The piston is inserted into the cylinder through the opening. The syringe drive device includes a cylinder holder to rotatably hold the cylinder of the syringe, and a piston driver to drive the piston in its axial direction with respect to the cylinder held in the cylinder holder.
摘要翻译：注射器驱动装置驱动包括圆柱形气缸和活塞的注射器。圆筒包括一端的溶液供给口和另一端的开口。活塞通过开口插入气缸。注射器驱动装置包括可旋转地保持注射器的气缸的气缸保持器和用于相对于保持在气缸保持器中的气缸沿其轴向方向驱动活塞的活塞驱动器。

10. 发明授权

US08402860B2 Structure, manipulator and structure control system 有权
标题翻译：结构，机械手和结构控制系统
公开(公告)号：US08402860B2
公开(公告)日：2013-03-26
申请号：US12249414
申请日：2008-10-10
申请人： Osamu Mizuno , Akinobu Okuda , Tsuyoshi Tojo , Tohru Nakamura , Rie Takahashi , Soichiro Fujioka , Yoshihiko Matsukawa
发明人： Osamu Mizuno , Akinobu Okuda , Tsuyoshi Tojo , Tohru Nakamura , Rie Takahashi , Soichiro Fujioka , Yoshihiko Matsukawa
IPC分类号： B25J18/00
CPC分类号： B25J19/063 , B25J9/1045 , B25J18/06 , Y10T74/20305
摘要： A structure is provided with a first member at a base end side, a third member at a leading end side, a second member arranged between the first and third members, and a coupling force generator for generating a first coupling force for pressing an end surface of the first member and that of the second member against each other and a second coupling force for pressing an end surface of the second member and that of the third member against each other. In this structure, the first and third members are relatively displaced upon the application of an external force larger than a coupling force generated between the end surface of the first member and that of the second member by the first coupling force, whereas the second and third members are relatively displaced upon the application of an external force larger than a coupling force generated between the end surface of the second member and that of the first member by the second coupling force.
摘要翻译：一种结构在基端侧具有第一构件，在前端侧具有第三构件，在第一构件和第三构件之间设置有第二构件，以及联接力发生器，用于产生用于按压端面的第一联接力的第一构件和第二构件的第二构件和第二构件彼此抵靠的第二联接力。在该结构中，第一和第三构件在施加比第一构件的端面和第二构件的端面之间产生的耦合力大的外力作用第一联接力时相对移位，而第二和第三构件当施加大于通过第二联接力在第二构件的端面与第一构件的端面之间产生的联接力的外力时，构件相对移位。

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