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1. 发明授权

US08258591B2 Micro-electro-mechanical systems (MEMS) device 有权
标题翻译：微机电系统（MEMS）装置
公开(公告)号：US08258591B2
公开(公告)日：2012-09-04
申请号：US12014810
申请日：2008-01-16
申请人： Chien-Hsing Lee , Tsung-Min Hsieh
发明人： Chien-Hsing Lee , Tsung-Min Hsieh
IPC分类号： H01L29/84
CPC分类号： B81C1/00246 , B81B2201/0235 , B81B2201/0242 , B81B2201/0257 , B81C2201/014 , B81C2203/0714 , B81C2203/0735
摘要： The present invention provides a MEMS device, be implemented on many MEMS device, such as MEMS microphone, MEMS speaker, MEMS accelerometer, MEMS gyroscope. The MEMS device includes a substrate. A dielectric structural layer is disposed over the substrate, wherein the dielectric structural layer has an opening to expose the substrate. A diaphragm layer is disposed over the dielectric structural layer, wherein the diaphragm layer covers the opening of the dielectric structural layer to form a chamber. A conductive electrode structure is adapted in the diaphragm layer and the substrate to store nonvolatile charges.
摘要翻译：本发明提供了一种MEMS器件，可在诸如MEMS麦克风，MEMS扬声器，MEMS加速度计，MEMS陀螺仪的许多MEMS器件上实现。 MEMS器件包括衬底。电介质结构层设置在衬底上，其中电介质结构层具有露出衬底的开口。隔膜层设置在电介质结构层上，其中隔膜层覆盖电介质结构层的开口以形成室。导电电极结构适用于隔膜层和基板以存储非易失性电荷。

2. 发明授权

US08217474B2 Hermetic MEMS device and method for fabricating hermetic MEMS device and package structure of MEMS device 有权
标题翻译：用于制造MEMS器件的密封MEMS器件和封装结构的密封MEMS器件和方法
公开(公告)号：US08217474B2
公开(公告)日：2012-07-10
申请号：US12647559
申请日：2009-12-28
申请人： Chien-Hsing Lee , Tsung-Min Hsieh , Jhyy-Cheng Liou
发明人： Chien-Hsing Lee , Tsung-Min Hsieh , Jhyy-Cheng Liou
IPC分类号： H01L27/14
CPC分类号： B81C1/00246 , B81B7/0064 , B81B2207/015 , B81B2207/07 , B81B2207/092 , B81C2203/0714 , H01L2224/48091 , H01L2224/48247 , H01L2924/1461 , H01L2924/00014 , H01L2924/00
摘要： A hermetic microelectromechanical system (MEMS) package includes a CMOS MEMS chip and a second substrate. The CMOS MEMS Chip has a first substrate, a structural dielectric layer, a CMOS circuit and a MEMS structure. The structural dielectric layer is disposed on a first side of the first structural substrate. The structural dielectric layer has an interconnect structure for electrical interconnection and also has a protection structure layer. The first structural substrate has at least a hole. The hole is under the protection structure layer to form at least a chamber. The chamber is exposed to the environment in the second side of the first structural substrate. The chamber also comprises a MEMS structure. The second substrate is adhered to a second side of the first substrate over the chamber to form a hermetic space and the MEMS structure is within the space.
摘要翻译：密封微机电系统（MEMS）封装包括CMOS MEMS芯片和第二基板。 CMOS MEMS芯片具有第一衬底，结构介电层，CMOS电路和MEMS结构。结构介电层设置在第一结构基板的第一侧上。结构介电层具有用于电互连的互连结构，并且还具有保护结构层。第一结构基底具有至少一个孔。该孔位于保护结构层之下，以形成至少一个腔室。该室暴露于第一结构基板的第二侧的环境。该腔室还包括MEMS结构。第二衬底在室上粘附到第一衬底的第二侧以形成密封空间，并且MEMS结构在空间内。

3. 发明授权

US08173471B2 Method for fabricating micro-electro-mechanical system (MEMS) device 有权
标题翻译：微机电系统（MEMS）装置的制造方法
公开(公告)号：US08173471B2
公开(公告)日：2012-05-08
申请号：US12111208
申请日：2008-04-29
申请人： Tsung-Min Hsieh , Chien-Hsing Lee
发明人： Tsung-Min Hsieh , Chien-Hsing Lee
IPC分类号： H01L21/00 , H01L29/84
CPC分类号： B81C1/00246 , B81B2201/0235 , B81B2207/015 , B81C2203/0714 , B81C2203/0735 , G01P15/0802 , G01P15/125
摘要： A method for fabricating MEMS device includes providing a substrate having a first side and a second side. Then, a structural dielectric layer is formed over the substrate at the first side, wherein a structural conductive layer is embedded in the structural dielectric layer. A multi-stage patterning process is performed on the substrate from the second side, wherein a plurality of regions of the substrate with different levels is formed and a portion of the structural dielectric layer is exposed. An isotropic etching process is performed from the second side of the substrate or from the both side of the substrate to etch the structural dielectric layer, wherein a remaining portion of the structural dielectric layer comprises the structural conductive layer and a dielectric portion enclosed by the structural conductive layer.
摘要翻译：一种用于制造MEMS器件的方法包括提供具有第一侧和第二侧的衬底。然后，在第一侧的基板上形成结构介电层，其中结构导电层嵌入结构介电层中。从第二侧在基板上进行多级图案化处理，其中形成具有不同层次的基板的多个区域，并且结构介电层的一部分被暴露。从衬底的第二侧或从衬底的两侧进行各向同性蚀刻工艺，以蚀刻结构电介质层，其中结构介电层的剩余部分包括结构导电层和由结构介电层包围的电介质部分导电层。

4. 发明授权

US08030112B2 Method for fabricating MEMS device 有权
标题翻译：制造MEMS器件的方法
公开(公告)号：US08030112B2
公开(公告)日：2011-10-04
申请号：US12691754
申请日：2010-01-22
申请人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
发明人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
IPC分类号： H01L21/00
CPC分类号： B81C1/00246 , B81B2203/0315 , B81B2207/015 , B81C2201/016 , B81C2203/0714 , H04R19/005 , H04R19/04 , H04R31/00
摘要： A method for fabricating MEMS device includes: providing a single crystal substrate, having first surface and second surface and having a MEMS region and an IC region; forming SCS mass blocks on the first surface in the MEMS region; forming a structural dielectric layer over the first surface of the substrate, wherein a dielectric member of the structural dielectric layer is filled in spaces surrounding the SCS mass blocks in the MEMS region, the IC region has a circuit structure with an interconnection structure formed in the structural dielectric layer; patterning the single crystal substrate by an etching process on the second surface to expose a portion of the dielectric member filled in the spaces surrounding the SCS mass blocks; performing isotropic etching process at least on the dielectric portion filled in the spaces surrounding the SCS mass blocks. The SCS mass blocks are exposed to release a MEMS structure.
摘要翻译：一种制造MEMS器件的方法包括：提供具有第一表面和第二表面并具有MEMS区域和IC区域的单晶衬底; 在MEMS区域的第一表面上形成SCS质量块; 在所述基板的所述第一表面上形成结构介电层，其中所述结构介电层的电介质部件填充在所述MEMS区域中围绕所述SCS质量块的空间中，所述IC区域具有形成在所述MEMS区域中的互连结构的电路结构结构介电层; 通过在第二表面上的蚀刻工艺对单晶衬底进行图案化，以暴露填充在围绕SCS质量块的空间中的电介质构件的一部分; 至少在填充在SCS质量块周围的空间中的电介质部分上进行各向同性蚀刻处理。暴露SCS质量块以释放MEMS结构。

5. 发明申请

US20110104844A1 METHOD FOR FABRICATING MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) DEVICE 有权
标题翻译：用于制造微机电系统（MEMS）器件的方法
公开(公告)号：US20110104844A1
公开(公告)日：2011-05-05
申请号：US12111208
申请日：2008-04-29
申请人： Tsung-Min Hsieh , Chien-Hsing Lee
发明人： Tsung-Min Hsieh , Chien-Hsing Lee
IPC分类号： H01L21/02
CPC分类号： B81C1/00246 , B81B2201/0235 , B81B2207/015 , B81C2203/0714 , B81C2203/0735 , G01P15/0802 , G01P15/125
摘要： A method for fabricating MEMS device includes providing a substrate having a first side and a second side. Then, a structural dielectric layer is formed over the substrate at the first side, wherein a structural conductive layer is embedded in the structural dielectric layer. A multi-stage patterning process is performed on the substrate from the second side, wherein a plurality of regions of the substrate with different levels is formed and a portion of the structural dielectric layer is exposed. An isotropic etching process is performed from the second side of the substrate or from the both side of the substrate to etch the structural dielectric layer, wherein a remaining portion of the structural dielectric layer comprises the structural conductive layer and a dielectric portion enclosed by the structural conductive layer.
摘要翻译：一种用于制造MEMS器件的方法包括提供具有第一侧和第二侧的衬底。然后，在第一侧的基板上形成结构介电层，其中结构导电层嵌入结构介电层中。从第二侧在基板上进行多级图案化处理，其中形成具有不同层次的基板的多个区域，并且结构介电层的一部分被暴露。从衬底的第二侧或从衬底的两侧进行各向同性蚀刻工艺，以蚀刻结构电介质层，其中结构介电层的剩余部分包括结构导电层和由结构介电层包围的电介质部分导电层。

6. 发明申请

US20100330722A1 CMOS MICROELECTROMECHANICAL SYSTEM (MEMS) DEVICE AND FABRICATION METHOD THEREOF 有权
标题翻译： CMOS微电子机电系统（MEMS）器件及其制造方法
公开(公告)号：US20100330722A1
公开(公告)日：2010-12-30
申请号：US12490318
申请日：2009-06-24
申请人： Tsung-Min Hsieh , Chien-Hsing Lee
发明人： Tsung-Min Hsieh , Chien-Hsing Lee
IPC分类号： H01L21/30
CPC分类号： B81C1/00246 , B81B2201/0235 , B81C2203/0714 , G01L9/0042 , G01P15/0802 , G01P15/125 , G01P2015/0828
摘要： A method for fabricating the MEMS device includes providing a substrate. Then, a structural dielectric layer is formed over the substrate at a first side, wherein a diaphragm is embedded in the structural dielectric layer. The substrate is patterned from a second side to form a cavity in corresponding to the diaphragm and a plurality of venting holes in the substrate. An isotropic etching process is performed from the first side and the second side of the substrate via vent holes to remove a dielectric portion of the structural dielectric layer for exposing a central portion of the diaphragm while an end portion is held by a residue portion of the structural dielectric layer.
摘要翻译：一种用于制造MEMS器件的方法包括提供衬底。然后，在第一面上在基板上形成结构介电层，其中隔膜嵌入在结构介电层中。衬底从第二侧构图，以形成对应于隔膜的空腔和衬底中的多个排气孔。从衬底的第一侧和第二侧经由通气孔进行各向同性蚀刻处理，以去除结构介质层的电介质部分，用于暴露隔膜的中心部分，同时端部被残留部分保持结构介电层。

7. 发明申请

US20050237777A1 Nonvolatile memory device and method for fabricating the same 失效
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20050237777A1
公开(公告)日：2005-10-27
申请号：US10987045
申请日：2004-11-12
申请人： Tsung-Min Hsieh , Jhyy-Cheng Liou , Chien-Hsing Lee , Chin-Hsi Lin
发明人： Tsung-Min Hsieh , Jhyy-Cheng Liou , Chien-Hsing Lee , Chin-Hsi Lin
IPC分类号： G11C16/04 , H01L21/8246 , H01L27/115
CPC分类号： G11C16/0491 , G11C16/0475 , H01L27/115 , H01L27/11568
摘要： A structure of non-volatile memory has a plurality of buried bit lines in a substrate, extending along a first direction. Selection gate structure lines are located between the buried bit lines. A plurality of stack dielectric films on the both sides of the selection gate structure lines serving as a charge storage region, does not extend to the bit lines and a dielectric layer contacting a surface of substrate adjacent to stacked dielectric films. Word lines are over the substrate, wherein stacked dielectric films and a dielectric layer are interposed between WL and substrate on the region excluding the selection gate structure line, extending along a second direction different from the first direction. Since the charge storage layer does not completely cover between the selection gate structure lines and the bit lines, an additional control gate is formed.
摘要翻译：非易失性存储器的结构在衬底中具有沿着第一方向延伸的多个掩埋位线。选择栅极结构线位于掩埋位线之间。在用作电荷存储区域的选择栅极结构线的两侧上的多个堆叠电介质膜不延伸到位线，并且电介质层与基板的与堆叠的电介质膜相邻的表面接触。字线在衬底上方，其中堆叠的电介质膜和电介质层插入在除了选择栅极结构线之外的区域之间的WL和衬底之间，沿着不同于第一方向的第二方向延伸。由于电荷存储层不完全覆盖在选择栅极结构线和位线之间，所以形成附加的控制栅极。

8. 外观设计

USD483114S1 Heat-dissipation fan assembly 失效
标题翻译：散热风扇总成
公开(公告)号：USD483114S1
公开(公告)日：2003-12-02
申请号：US29177245
申请日：2003-03-07
申请人： Alex Horng , Yin-Rong Horng , Ching-Sheng Hong , Tsung-Min Hsieh
设计人： Alex Horng , Yin-Rong Horng , Ching-Sheng Hong , Tsung-Min Hsieh

9. 发明授权

US09314176B2 Apparatus and method for processing signal 有权
标题翻译：信号处理装置及方法
公开(公告)号：US09314176B2
公开(公告)日：2016-04-19
申请号：US13450930
申请日：2012-04-19
申请人： Sun-Hua Pao , Chieh-Neng Young , Tsung-Min Hsieh , Yio-Wha Shau
发明人： Sun-Hua Pao , Chieh-Neng Young , Tsung-Min Hsieh , Yio-Wha Shau
IPC分类号： H03F1/26 , A61B5/04 , H03H17/02 , A61B5/00 , A61B5/0432
CPC分类号： A61B5/04004 , A61B5/04017 , A61B5/04325 , A61B5/725 , A61B2560/0475 , H03H17/0261
摘要： An apparatus and a method for processing signal are provided. The signal processing apparatus comprises an input interface and a processing unit. The input interface receives smoothing parameters and a to-be-separated signal. The processing unit establishes an upper extreme envelope and a lower extreme envelope of the to-be-separated signal, and calculates a mean envelope between the upper extreme envelope and the lower extreme envelope. The processing unit performs smoothing according to the smoothing parameters and the mean envelope to generate a smoothed mean envelope, and determines a trend component or a non-trend component according to the smoothed mean envelope.
摘要翻译：提供了一种用于处理信号的装置和方法。信号处理装置包括输入接口和处理单元。输入接口接收平滑参数和待分离信号。处理单元建立待分离信号的上极限和下极限，并计算上极限和下极限之间的平均包络。处理单元根据平滑参数和平均包络进行平滑处理，以生成平滑的平均包络，并根据平滑的平均包络确定趋势分量或非趋势分量。

10. 发明授权

US08502329B2 Micro-electro-mechanical systems (MEMS) device and method for fabricating the same 有权
标题翻译：微机电系统（MEMS）装置及其制造方法
公开(公告)号：US08502329B2
公开(公告)日：2013-08-06
申请号：US13224297
申请日：2011-09-01
申请人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
发明人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
IPC分类号： H01L29/84
CPC分类号： B81C1/00698 , B81C1/00682 , H01G5/18 , H04R19/005 , H04R19/04
摘要： A MEMS device includes a substrate. The substrate has a plurality of through holes in the substrate within a diaphragm region and optionally an indent space from the second surface at the diaphragm region. A first dielectric structural layer is then disposed over the substrate from the first surface, wherein the first dielectric structural layer has a plurality of openings corresponding to the through holes, wherein each of the through holes remains exposed by the first dielectric structural layer. A second dielectric structural layer with a chamber is disposed over the first dielectric structural layer, wherein the chamber exposes the openings of the first dielectric structural layer and the through holes of the substrate to connect to the indent space. A MEMS diaphragm is embedded in the second dielectric structural layer above the chamber, wherein an air gap is formed between the substrate and the MEMS diaphragm.
摘要翻译： MEMS器件包括衬底。衬底在膜片区域内的衬底中具有多个通孔，并且可选地在隔膜区域处具有与第二表面相邻的凹陷空间。然后，第一介电结构层从第一表面设置在衬底上，其中第一介电结构层具有对应于通孔的多个开口，其中每个通孔保持被第一介电结构层暴露。具有腔室的第二电介质结构层设置在第一介电结构层上，其中腔室暴露第一介电结构层的开口和衬底的通孔以连接到凹陷空间。 MEMS隔膜嵌入在腔室上方的第二电介质结构层中，其中在衬底和MEMS隔膜之间形成气隙。

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