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1. 发明授权

US08400806B2 Semiconductor device 失效
公开(公告)号：US08400806B2
公开(公告)日：2013-03-19
申请号：US12972238
申请日：2010-12-17
申请人： Toshio Sasaki , Yoshihiko Yasu , Takashi Kuraishi , Ryo Mori
发明人： Toshio Sasaki , Yoshihiko Yasu , Takashi Kuraishi , Ryo Mori
IPC分类号： G11C5/02
CPC分类号： G11C5/145 , G11C5/025 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/49 , H01L2924/01015 , H01L2924/1306 , H01L2924/14 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A technology that makes it possible to reduce fluctuation in operating voltage for operating the circuits formed in the core region of a semiconductor device is provided. This semiconductor device is so arranged that the core region is divided into multiple functional blocks and power can be supplied and this power supply can be interrupted with respect to each of the divided functional blocks. The core region formed in the semiconductor chip is divided into multiple functional blocks. A power switch row in which multiple power switches are arranged is disposed in the boundaries between the divided functional blocks. These power switches have a function of controlling the supply of reference potential to each of functional blocks and the interruption of this supply. A feature of the invention is that reference pads are disposed directly above the power switch rows. This shortens the wires coupling together the reference pads and the power switches.

2. 发明申请

US20110085400A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20110085400A1
公开(公告)日：2011-04-14
申请号：US12972238
申请日：2010-12-17
申请人： TOSHIO SASAKI , Yoshihiko Yasu , Takashi Kuraishi , Ryo Mori
发明人： TOSHIO SASAKI , Yoshihiko Yasu , Takashi Kuraishi , Ryo Mori
IPC分类号： G11C5/14
CPC分类号： G11C5/145 , G11C5/025 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/49 , H01L2924/01015 , H01L2924/1306 , H01L2924/14 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A technology that makes it possible to reduce fluctuation in operating voltage for operating the circuits formed in the core region of a semiconductor device is provided. This semiconductor device is so arranged that the core region is divided into multiple functional blocks and power can be supplied and this power supply can be interrupted with respect to each of the divided functional blocks. The core region formed in the semiconductor chip is divided into multiple functional blocks. A power switch row in which multiple power switches are arranged is disposed in the boundaries between the divided functional blocks. These power switches have a function of controlling the supply of reference potential to each of functional blocks and the interruption of this supply. A feature of the invention is that reference pads are disposed directly above the power switch rows. This shortens the wires coupling together the reference pads and the power switches.
摘要翻译：提供了一种能够减少用于操作形成在半导体器件的芯区域中的电路的工作电压的波动的技术。该半导体器件被布置成使得芯区域被分成多个功能块并且可以提供电力，并且该电源可以相对于每个分割的功能块被中断。形成在半导体芯片中的芯区域被分成多个功能块。配置有多个功率开关的电源开关列设置在分割的功能块之间的边界。这些电源开关具有控制每个功能块的参考电位供应和该电源的中断的功能。本发明的特征在于，参考焊盘直接设置在功率开关行的正上方。这会缩短将参考焊盘和电源开关连接在一起的电线。

3. 发明申请

US20100090113A1 METHOD AND APPARATUS FOR RETRIEVING INFORMATION FROM OPTICAL STORAGE MEDIUM 审中-公开
标题翻译：从光存储介质检索信息的方法和装置
公开(公告)号：US20100090113A1
公开(公告)日：2010-04-15
申请号：US12578828
申请日：2009-10-14
申请人： Toshio SASAKI
发明人： Toshio SASAKI
IPC分类号： G01T1/20
CPC分类号： G11B7/005 , G11B7/1359 , G11B7/1381 , G11B2007/0013
摘要： To retrieve information from an optical storage medium having a recording layer in which binary information is recorded in a form of presence or absence of a fluorescing property, the recording layer is illuminated with a light beam in a linearly polarized state, to induce fluorescence in the recording layer. Fluorescent light is isolated from light reflected in the optical storage medium by a polarized light separation element attenuating a linearly polarized component (including the light reflected in the optical storage medium) of the light coming from the optical storage medium, and the fluorescent light derived from the induced fluorescence is detected by a photosensor, which outputs a signal bearing the binary information recorded in the recording layer.
摘要翻译：为了从具有以存在或不存在荧光性质的形式记录二进制信息的记录层的光学存储介质检索信息，以线偏振状态的光束照射记录层，以在记录层。荧光灯通过使来自光存储介质的光的线偏振分量（包括光存储介质中反射的光）衰减的偏振光分离元件与从光存储介质反射的光隔离，感应荧光由光电传感器检测，光电传感器输出承载记录在记录层中的二进制信息的信号。

4. 发明申请

US20100061212A1 METHOD AND DEVICE FOR OPTICAL RECORDING MEDIUM, AND OPTICAL RECORDING AND REPRODUCING APPARATUS 审中-公开
标题翻译：光记录介质的方法和装置，以及光学记录和再现装置
公开(公告)号：US20100061212A1
公开(公告)日：2010-03-11
申请号：US12295424
申请日：2006-12-18
申请人： Makoto Kamo , Yoshihisa Usami , Toshio Sasaki
发明人： Makoto Kamo , Yoshihisa Usami , Toshio Sasaki
IPC分类号： G11B7/00
CPC分类号： G11B7/00781 , G03H1/18 , G03H1/182 , G03H2223/14 , G11B7/0065 , G11B7/0938 , G11B7/1275 , G11B7/1392 , G11B7/24038 , G11B7/24044 , G11B7/26
摘要： The present invention is to provide a method for treating an optical recording medium including irradiating a recording layer, which has recorded information, with a treatment light through a light diffusion member having a haze of 70% to 100%, wherein the optical recording medium contains at least the recording layer which records information using holography, and a device for treating an optical recording medium containing a light source for the treatment light, and the light diffusion member having a haze of 70% to 100% and disposed between the light source and the optical recording medium, wherein the recording layer is irradiated with the treatment light through the light diffusion member from the light source. The preferred aspects are that a half width of wavelength for an energy intensity of the treatment light is 5 nm to 700 nm; and the optical recording medium is a write-once read-many optical recording medium.
摘要翻译：本发明提供一种处理光记录介质的方法，包括用具有70％至100％的雾度的光漫射构件用处理光照射具有记录信息的记录层的光记录介质，其中光记录介质包含至少使用全息记录信息的记录层，以及用于处理含有处理用光源的光源的光记录媒体的装置以及具有70％〜100％的雾度的光漫射部件，配置在光源和光记录介质，其中记录层通过来自光源的光漫射构件用处理光照射。优选的方面是处理光的能量强度的波长的一半宽度为5nm至700nm; 并且光记录介质是一次写入多次的光记录介质。

5. 发明申请

US20080254374A1 HOLOGRAPHIC RECORDING COMPOSITION AND HOLOGRAPHIC RECORDING MEDIUM 失效
标题翻译：全息记录组合物和全息记录介质
公开(公告)号：US20080254374A1
公开(公告)日：2008-10-16
申请号：US12061954
申请日：2008-04-03
申请人： Satoru YAMADA , Makoto Kamo , Toshio Sasaki
发明人： Satoru YAMADA , Makoto Kamo , Toshio Sasaki
IPC分类号： G03F7/00
CPC分类号： G11B7/245 , G11B7/00781 , G11B7/24044 , G11B7/244 , G11B7/2492 , G11B7/2533 , G11B7/2534 , G11B7/2536 , G11B7/2585
摘要： The present invention provides a holographic recording composition and a holographic recording medium comprising a recording layer formed with the holographic recording composition. The holographic recording composition comprises a bifunctional or greater isocyanate, a polyfunctional alcohol comprising a bifunctional alcohol and a trifunctional or greater alcohol, a titanocene-based radical polymerization initiator, a bifunctional or greater acrylate monomer, and an amidine salt denoted by General Formula (1). In General Formula (1), R1, R2, and R3 each independently denote an alkyl group, aryl group, amino group, or acyl group, R1 and R2 may be bonded together to form a ring, R2 and R3 may be bonded together to form a ring, and A− denotes an anion.
摘要翻译：本发明提供一种全息记录组合物和全息记录介质，其包括由全息记录组合物形成的记录层。全息记录组合物包含双官能或更大的异氰酸酯，包含双官能醇和三官能以上醇的多官能醇，二茂钛基自由基聚合引发剂，双官能或更高级丙烯酸酯单体和由通式（1）表示的脒盐）。在通式（1）中，R 1，R 2，R 3和R 3各自独立地表示烷基，芳基，氨基，或酰基，R 1和R 2可以结合在一起形成环，R 2和R 3 >可以键合在一起以形成环，并且“A”表示阴离子。

6. 发明申请

US20080219082A1 NONVOLATILE SEMICONDUCTOR MEMORY 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US20080219082A1
公开(公告)日：2008-09-11
申请号：US12046150
申请日：2008-03-11
申请人： Masataka Kato , Tetsuo Adachi , Toshihiro Tanaka , Toshio Sasaki , Hitoshi Kume , Katsutaka Kimura
发明人： Masataka Kato , Tetsuo Adachi , Toshihiro Tanaka , Toshio Sasaki , Hitoshi Kume , Katsutaka Kimura
IPC分类号： G11C8/06 , G11C8/10
CPC分类号： G11C16/0416 , G11C8/08 , G11C16/10 , G11C16/12 , G11C16/16 , G11C16/34 , G11C16/3418 , G11C16/3427 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/7883 , H01L29/7885
摘要： Disclosed is a nonvolatile memory system including at least one nonvolatile memory each having a plurality of nonvolatile memory cells and a buffer memory; and a control device coupled to the nonvolatile memory. The control device is enabled to receive external data and to apply the data to the nonvolatile memory, and the nonvolatile memory is enabled to operate a program operation including storing the received data to the buffer memory and storing the data held in the buffer memory to ones of nonvolatile memory cells. Moreover, the control device is enabled to receive external data while the nonvolatile memory is operating in the program operation. Also, the buffer memory is capable of receiving a unit of data, equal to the data length of data to be stored at one time of the program operation, the data length being more than 1 byte.
摘要翻译：公开了一种非易失性存储器系统，包括至少一个非易失性存储器，每个非易失性存储器具有多个非易失性存储单元和缓冲存储器; 以及耦合到所述非易失性存储器的控制装置。控制装置能够接收外部数据并将数据应用于非易失性存储器，并且使非易失性存储器能够操作程序操作，包括将接收到的数据存储到缓冲存储器并将保存在缓冲存储器中的数据存储到缓冲存储器中的非易失性存储单元。此外，控制装置能够在非易失性存储器在程序操作中操作时接收外部数据。此外，缓冲存储器能够接收与程序运行一次要存储的数据的数据长度相等的数据单位，数据长度大于1字节。

7. 发明申请

US20070223348A1 Optical recording method, optical recording apparatus and optical recording medium 审中-公开
标题翻译：光记录方法，光记录装置和光记录介质
公开(公告)号：US20070223348A1
公开(公告)日：2007-09-27
申请号：US11727061
申请日：2007-03-23
申请人： Toshio Sasaki
发明人： Toshio Sasaki
IPC分类号： G11B7/00
CPC分类号： G11B7/0065 , G03H1/16 , G11B7/00781 , G11B7/24044 , G11B7/2405 , G11B7/245 , G11B7/246 , G11B7/2463 , G11B7/252 , G11B7/2585 , G11B7/26 , G11B20/1217 , G11B27/10 , G11B27/3027 , G11B2020/1287 , G11B2220/2504
摘要： To provide an optical recording method including: applying information and reference beams onto an optical recording medium to record information therein, the optical recording medium having a recording layer for recording the information by holography, wherein at least the information beam is passed through a spatial light modulator and is formed as a two-dimensional pattern composed of a data area and a plurality of synchronization marks for detecting information concerning the positions of data recorded in the data area, and wherein the synchronization marks are arranged in a random pattern so that in a Fourier-transformed image of the two-dimensional pattern, light intensities derived from the synchronization marks are lower than light intensities in a Fourier-transformed image of a two-dimensional pattern composed of a data area and a plurality of synchronization marks arranged in a grid pattern, the light intensities being derived from the synchronization marks arranged in a grid pattern.
摘要翻译：为了提供一种光学记录方法，包括：将信息和参考光束应用到光学记录介质上以在其中记录信息，所述光学记录介质具有用于通过全息记录信息的记录层，其中至少信息光束通过空间光并且形成为由数据区域和多个同步标记组成的二维图案，用于检测关于记录在数据区域中的数据的位置的信息，并且其中同步标记以随机图案排列，使得在二维图案的傅里叶变换图像，从同步标记导出的光强度低于由数据区域和布置在网格中的多个同步标记组成的二维图案的傅里叶变换图像中的光强度模式，光强度从布置在网格中的同步标记导出模式

8. 发明申请

US20070004092A1 Semiconductor device manufacturing method 审中-公开
标题翻译：半导体器件制造方法
公开(公告)号：US20070004092A1
公开(公告)日：2007-01-04
申请号：US10569735
申请日：2003-08-29
申请人： Hiromichi Suzuki , Fujio Ito , Toshio Sasaki
发明人： Hiromichi Suzuki , Fujio Ito , Toshio Sasaki
IPC分类号： H01L21/00
CPC分类号： H01L24/83 , H01L21/565 , H01L23/4334 , H01L23/49558 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48253 , H01L2224/73265 , H01L2224/83192 , H01L2224/838 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/07802 , H01L2924/181 , H01L2924/00 , H01L2924/3512 , H01L2224/05599 , H01L2924/00012
摘要： This manufacturing method of a semiconductor device prepares a lead frame to which a heat spreader, and the tip parts of a plurality of inner leads were joined via a thermoplastic insulating binding material, arranges a lead frame on a heat stage, and joins the semiconductor chip to the heat spreader via the thermoplastic binding material which was heated and softened after having arranged the semiconductor chip on the heat spreader. Die bonding can be performed without scattering inner leads by joining the semiconductor chip and the thermoplastic binding material, suppressing the tip parts of the inner leads to the heat stage side. Improvement in the assembling property of a semiconductor device can be aimed at.
摘要翻译：这种半导体装置的制造方法准备一个引线框架，散热器和多个内部引线的末端部分通过热塑性绝缘粘合材料接合，将引线框架布置在热台上，并连接半导体芯片通过在将散热器上布置半导体芯片之后被加热和软化的热塑性粘合材料到散热器。可以通过接合半导体芯片和热塑性粘合材料而不会使内部引线散射，从而将内部引线的顶端部分抑制到加热台侧来进行晶片接合。可以针对半导体器件的组装性能的改进。

9. 发明申请

US20070001271A1 Lead frame and method of manufacturing the lead frame 失效
标题翻译：引线框架和引线框架的制造方法
公开(公告)号：US20070001271A1
公开(公告)日：2007-01-04
申请号：US10569577
申请日：2003-08-29
申请人： Fujio Ito , Hiromichi Suzuki , Toshio Sasaki
发明人： Fujio Ito , Hiromichi Suzuki , Toshio Sasaki
IPC分类号： H01L23/495
CPC分类号： H01L23/49541 , H01L21/4842 , H01L23/49558 , H01L2924/0002 , H01L2924/00
摘要： A plurality of inner leads, a plurality of outer leads formed in one with each of the inner lead, a bar lead of the square ring shape arranged inside a plurality of inner leads, a corner part lead which has been arranged between the inner leads of the end portion of the inner lead groups which adjoin among four inner lead groups corresponding to each side of the bar lead, and was connected with the bar lead, and a tape member joined to the tip part of each inner lead, a bar lead, and a corner part lead are included. Since the corner part lead is formed as an object for reinforcement of a frame body between adjoining inner lead groups, the rigidity of the lead frame can be increased.
摘要翻译：多个内部引线，多个外部引线，每个外部引线与内部引线中的每一个形成一个，方形环形状的引脚布置在多个内部引线内;角部引线，其设置在内部引线之间所述内引线组的与所述棒引线的每一侧相对应的四个内引线组中相邻的所述内引线组的端部与所述引线连接，以及与所述内引线的前端接合的带部件，并包括角落部分铅。由于角部引线形成为在相邻的内引线组之间加强框架体的对象，所以可以提高引线框架的刚性。

10. 发明授权

US07073147B2 Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07073147B2
公开(公告)日：2006-07-04
申请号：US10694825
申请日：2003-10-29
申请人： Hiroyuki Ikeda , Toshio Sasaki , Akinobu Watanabe , Toshio Yamada , Akihisa Uchida
发明人： Hiroyuki Ikeda , Toshio Sasaki , Akinobu Watanabe , Toshio Yamada , Akihisa Uchida
IPC分类号： G06F17/50
CPC分类号： H01L27/11 , G11C5/14 , H01L27/0207
摘要： Wirings connected to a gate electrode of a slave switch circuit cell for substrate bias circuits are respectively electrically connected to a wiring for a power supply potential and a wiring for a reference potential. Thus, the switch operation of the slave switch circuit cell is made invalid. Wirings connected to n wells of respective circuit cells are electrically connected to a wiring for the power supply potential, and wirings connected to p wells of the respective circuit cells are electrically connected to the wiring. Thus, the n wells are fixed to the power supply potential, and the p wells are fixed to the reference potential.
摘要翻译：连接到用于衬底偏置电路的从属开关电路单元的栅电极的布线分别电连接到用于电源电位的布线和用于参考电位的布线。因此，从开关电路单元的开关动作无效。连接到各个电路单元的n个阱的布线电连接到用于电源电位的布线，并且连接到各个电路单元的p阱的布线电连接到布线。因此，n个阱被固定到电源电位，并且p阱被固定到参考电位。

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