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1. 发明授权

US08400806B2 Semiconductor device 失效
公开(公告)号：US08400806B2
公开(公告)日：2013-03-19
申请号：US12972238
申请日：2010-12-17
申请人： Toshio Sasaki , Yoshihiko Yasu , Takashi Kuraishi , Ryo Mori
发明人： Toshio Sasaki , Yoshihiko Yasu , Takashi Kuraishi , Ryo Mori
IPC分类号： G11C5/02
CPC分类号： G11C5/145 , G11C5/025 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/49 , H01L2924/01015 , H01L2924/1306 , H01L2924/14 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A technology that makes it possible to reduce fluctuation in operating voltage for operating the circuits formed in the core region of a semiconductor device is provided. This semiconductor device is so arranged that the core region is divided into multiple functional blocks and power can be supplied and this power supply can be interrupted with respect to each of the divided functional blocks. The core region formed in the semiconductor chip is divided into multiple functional blocks. A power switch row in which multiple power switches are arranged is disposed in the boundaries between the divided functional blocks. These power switches have a function of controlling the supply of reference potential to each of functional blocks and the interruption of this supply. A feature of the invention is that reference pads are disposed directly above the power switch rows. This shortens the wires coupling together the reference pads and the power switches.

2. 发明申请

US20110085400A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20110085400A1
公开(公告)日：2011-04-14
申请号：US12972238
申请日：2010-12-17
申请人： TOSHIO SASAKI , Yoshihiko Yasu , Takashi Kuraishi , Ryo Mori
发明人： TOSHIO SASAKI , Yoshihiko Yasu , Takashi Kuraishi , Ryo Mori
IPC分类号： G11C5/14
CPC分类号： G11C5/145 , G11C5/025 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/49 , H01L2924/01015 , H01L2924/1306 , H01L2924/14 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A technology that makes it possible to reduce fluctuation in operating voltage for operating the circuits formed in the core region of a semiconductor device is provided. This semiconductor device is so arranged that the core region is divided into multiple functional blocks and power can be supplied and this power supply can be interrupted with respect to each of the divided functional blocks. The core region formed in the semiconductor chip is divided into multiple functional blocks. A power switch row in which multiple power switches are arranged is disposed in the boundaries between the divided functional blocks. These power switches have a function of controlling the supply of reference potential to each of functional blocks and the interruption of this supply. A feature of the invention is that reference pads are disposed directly above the power switch rows. This shortens the wires coupling together the reference pads and the power switches.
摘要翻译：提供了一种能够减少用于操作形成在半导体器件的芯区域中的电路的工作电压的波动的技术。该半导体器件被布置成使得芯区域被分成多个功能块并且可以提供电力，并且该电源可以相对于每个分割的功能块被中断。形成在半导体芯片中的芯区域被分成多个功能块。配置有多个功率开关的电源开关列设置在分割的功能块之间的边界。这些电源开关具有控制每个功能块的参考电位供应和该电源的中断的功能。本发明的特征在于，参考焊盘直接设置在功率开关行的正上方。这会缩短将参考焊盘和电源开关连接在一起的电线。

3. 发明授权

US07534989B2 Detecting device and laminated body manufacturing apparatus employing such detecting device 失效
标题翻译：使用这种检测装置的检测装置和层叠体制造装置
公开(公告)号：US07534989B2
公开(公告)日：2009-05-19
申请号：US11631783
申请日：2005-07-06
申请人： Kazuyoshi Suehara , Ryo Mori , Nobuyasu Akiyoshi
发明人： Kazuyoshi Suehara , Ryo Mori , Nobuyasu Akiyoshi
IPC分类号： G06M7/00 , G01N21/86
CPC分类号： G01N21/8916
摘要： A laser beam emitted from a laser diode of each of detectors is applied to a partly cut region of a photosensitive sheet film which is spread toward the detectors by a film bending roller. Part of the laser beam which is reflected from the partly cut region is detected by an amount-of-light sensor. The laser beam that is applied to a surface of the photosensitive sheet film other than the partly cut region is reflected outside of a light-detecting area of the amount-of light sensor, and is not detected by the amount-of-light sensor.
摘要翻译：从每个检测器的激光二极管发射的激光束被施加到通过膜弯曲辊向检测器扩散的感光片的部分切割区域。由部分切割区域反射的激光束的一部分由光量传感器检测。施加到除了部分切割区域之外的感光片膜的表面的激光束被反射到光传感器的光检测区域的外部，并且不被光量传感器检测。

4. 发明申请

US20090078365A1 APPARATUS FOR AND METHOD OF MANUFACTURING PHOTOSENSITIVE LAMINATED BODY 审中-公开
标题翻译：制造感光层压体的方法及方法
公开(公告)号：US20090078365A1
公开(公告)日：2009-03-26
申请号：US11909558
申请日：2006-01-05
申请人： Kazuyoshi Suehara , Nobuyasu Akiyoshi , Kenichi Imoto , Ryoichi Sugihara , Ryo Mori , Chiaki Suzuki
发明人： Kazuyoshi Suehara , Nobuyasu Akiyoshi , Kenichi Imoto , Ryoichi Sugihara , Ryo Mori , Chiaki Suzuki
IPC分类号： B32B37/06
CPC分类号： B32B38/185 , B32B37/223 , B32B38/0004 , B32B38/10 , B32B2037/268 , B32B2038/1891 , B32B2457/08 , B32B2457/20 , B32B2559/00
摘要： A manufacturing apparatus has a reel-out mechanism, a processing mechanism, a label bonding mechanism, a reservoir mechanism, a peeling mechanism, a substrate feed mechanism, an attachment mechanism, and a base peeling mechanism. A cooling mechanism is disposed between the attachment mechanism and the base peeling mechanism, for cooling an attached substrate, the attached substrate being made up of a glass substrate and a photosensitive web attached thereto, from which a protective film has been peeled off, together with a heating mechanism for heating a resin layer, for example a cushion layer, inside the cooled attached substrate to within a predetermined temperature range, which is at or below the glass transition temperature.
摘要翻译：制造装置具有卷取机构，处理机构，标签接合机构，储存器机构，剥离机构，基板进给机构，附接机构和基部剥离机构。冷却机构设置在安装机构和基部剥离机构之间，用于冷却附着的基板，附着的基板由玻璃基板和附着于其上的感光卷材组成，保护膜从该剥离机构剥离下来，连同加热机构，用于将冷却的附接基板内的树脂层，例如缓冲层加热至处于或低于玻璃化转变温度的预定温度范围内。

5. 发明申请

US20080030734A1 Detecting Device And Laminated Body Manufacturing Apparatus Employing Such Detecting Device 失效
标题翻译：使用这种检测装置的检测装置和层压体制造装置
公开(公告)号：US20080030734A1
公开(公告)日：2008-02-07
申请号：US11631783
申请日：2005-07-06
申请人： Kazuyoshi Suehara , Ryo Mori , Nobuyasu Akiyoshi
发明人： Kazuyoshi Suehara , Ryo Mori , Nobuyasu Akiyoshi
IPC分类号： G01N21/84
CPC分类号： G01N21/8916
摘要： A laser beam (LB) emitted from a laser diobe of each of detectors is applied to a partly cut region of a photosensitive sheet film which is spread toward the detectors by a film bending roller. Part of the laser beam (LB) which is reflected from the partly cut region is detected by an amount-of-light sensor. The laser beam (LB) that is applied to a surface of the photosensitive sheet film other than the partly cut region is reflected outside of a light-detecting area of the amount-of light sensor, and is not detected by the amount-of-light sensor.
摘要翻译：从每个检测器的激光二极管发射的激光束（LB）被施加到通过膜弯曲辊向检测器扩散的感光片的部分切割区域。由部分切割区域反射的部分激光束（LB）由光量传感器检测。施加到除了部分切割区域之外的感光片的表面的激光束（LB）被反射到光量传感器的光检测区域外面，光传感器。

6. 发明授权

US07245521B2 Semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件
公开(公告)号：US07245521B2
公开(公告)日：2007-07-17
申请号：US11169800
申请日：2005-06-30
申请人： Ryo Mori , Toshio Yamada , Tetsuya Muraya
发明人： Ryo Mori , Toshio Yamada , Tetsuya Muraya
IPC分类号： G11C11/00 , G11C5/14
CPC分类号： G11C11/412
摘要： The present invention provides a semiconductor integrated circuit device having an SRAM in which leak current is reduced. In an SRAM comprising a plurality of memory cells each constructed by a storage in which input and output terminals of two inverter circuits are cross-connected and a selection MOSFET provided between the storage and complementary bit lines and whose gate is connected to a word line, a substrate bias switching circuit is provided. In normal operation, the substrate bias switching circuit supplies a power source voltage to an N-type well in which a P-channel MOSFET of a memory cell is formed and supplies a ground potential of the circuit to a P-type well in which an N-channel MOSFET is formed. In the standby state, the substrate bias switching circuit supplies a predetermined voltage which is lower than the power source voltage and by which a PN junction between the N-type well and the source of the P-channel MOSFET is not forward biased to the N-type well, and supplies a predetermined voltage which is higher than the ground potential and by which a PN junction between the P-type well and the source of the N-channel MOSFET is not forward biased to the P-type well.
摘要翻译：本发明提供一种半导体集成电路器件，其具有泄漏电流降低的SRAM。在包括多个存储单元的SRAM中，每个存储单元由两个反相器电路的输入和输出端子交叉存储的存储器构成，以及设置在存储和互补位线之间并且其栅极连接到字线的选择MOSFET，提供了衬底偏置开关电路。在正常操作中，衬底偏置开关电路将电源电压提供给形成存储单元的P沟道MOSFET的N型阱，并将电路的接地电位提供给P型阱，其中，形成N沟道MOSFET。在待机状态下，衬底偏置开关电路提供低于电源电压的预定电压，并且N型阱和P沟道MOSFET的源极之间的PN结不被正向偏置到N 并且提供比地电位高的预定电压，并且P型阱和N沟道MOSFET的源极之间的PN结未被正向偏置到P型阱。

7. 发明申请

US20060060610A1 Fluid dispenser and lens inspection device 有权
公开(公告)号：US20060060610A1
公开(公告)日：2006-03-23
申请号：US11273089
申请日：2005-11-15
申请人： Masaya Morita , Ryo Mori , Fumio Yuito
发明人： Masaya Morita , Ryo Mori , Fumio Yuito
IPC分类号： B65D88/54 , G01F11/06 , G01F11/30 , G01F11/36 , G01F11/42
CPC分类号： G01N21/8483 , B01F7/00291 , B01F13/0827 , B01F13/0863 , B05B15/25 , B05C11/1021 , G01M11/02 , G01M11/0207 , G01M11/0214 , G01M11/0221 , G01M11/0257 , G01N21/8806 , G01N21/896 , G01N21/958 , G01N2021/9511 , G01N2021/9583
摘要： A fluid dispenser dispenses a fluid alternately from one of a pair of ports (29,31) that are provided on opposite ends of a syringe (26) by moving a piston (42) back and forth inside the syringe. A pair of stirrers (47,48) are provided in the syringe on opposite axial sides of the piston. The stirrers may each individually rotate on an axis that extends in parallel with the moving direction of the piston. A pair of stirrer driving rings (49,50) are mounted on an outer periphery of the syringe in correspondence with the stirrers. Magnets (55,56,59,60) are embedded in the stirrers and the stirrer driving rings such that the stirrer is rotated by magnetic fields that are generated from the stirrer driving ring, as the stirrer driving ring is rotated by a motor (51,52).

8. 发明授权

US08253481B2 Semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件
公开(公告)号：US08253481B2
公开(公告)日：2012-08-28
申请号：US13244553
申请日：2011-09-25
申请人： Toshio Sasaki , Kazuki Fukuoka , Ryo Mori , Yoshihiko Yasu
发明人： Toshio Sasaki , Kazuki Fukuoka , Ryo Mori , Yoshihiko Yasu
IPC分类号： G05F1/10
CPC分类号： H03K19/0016 , G06F1/3203 , G06F1/3287 , H01L27/0207 , H01L27/088 , H01L2224/48091 , H01L2924/13091 , Y02D10/171 , Y02D50/20 , H01L2924/00014 , H01L2924/00
摘要： The present invention is directed to perform fine low-voltage control without largely increasing the circuit layout area in a low-power consumption structure. In the case of shifting a region to a low-speed mode, a system controller outputs a request signal and an enable signal to a power switch controller and a low-power drive circuit, respectively, to turn off a power switch and to perform a control so that the voltage level of a virtual reference potential becomes about 0.2 V to about 0.3V. The region operates on voltages between a power supply voltage and a virtual reference potential, so that it is controlled in the low-speed mode.
摘要翻译：本发明旨在在低功耗结构中大幅度地提高电路布局面积的同时执行精细的低电压控制。在将区域移动到低速模式的情况下，系统控制器分别向功率开关控制器和低功率驱动电路输出请求信号和使能信号，以关闭电源开关并执行控制使得虚拟参考电位的电压电平变为约0.2V至约0.3V。该区域在电源电压和虚拟参考电位之间的电压下工作，使得其在低速模式下被控制。

9. 发明申请

US20100219800A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 有权
标题翻译：半导体集成电路设备
公开(公告)号：US20100219800A1
公开(公告)日：2010-09-02
申请号：US12714309
申请日：2010-02-26
申请人： Kazuki FUKUOKA , Yasuto Igarashi , Ryo Mori , Yoshihiko Yasu , Toshio Sasaki
发明人： Kazuki FUKUOKA , Yasuto Igarashi , Ryo Mori , Yoshihiko Yasu , Toshio Sasaki
IPC分类号： G05F1/10
CPC分类号： H03K5/00 , H01L27/0203 , H01L27/0207 , H01L27/0928 , H01L27/11807 , H03K3/00 , H03K19/0016
摘要： Efficient reduction in power consumption is achieved by combinational implementation of a power cutoff circuit technique using power supply switch control and a DVFS technique for low power consumption. A power supply switch section fed with power supply voltage, a circuit block in which a power cutoff is performed by the power supply switch section, and a level shifter are formed in a DEEP-NWELL region formed over a semiconductor substrate. Another power supply switch section fed with another power supply voltage, a circuit block in which a power cutoff is performed by the power supply switch section, and a level shifter are formed in another DEEP-NWELL region formed over the semiconductor substrate. In this arrangement, there arises no possibility of short-circuiting between different power supplies via each DEEP-NWELL region formed over the semiconductor substrate.
摘要翻译：通过使用电源开关控制和DVFS技术组合实现断电电路技术实现功耗的有效降低，实现低功耗。在半导体基板上形成的DEEP-NWELL区域中，形成供给电源电压的电源开关部，由电源开关部进行电源切断的电路块和电平移位器。供给另一电源电压的另一个电源开关部分，由电源开关部分执行电源切断的电路块和电平移位器形成在形成在半导体衬底上的另一个DEEP-NWELL区域中。在这种布置中，不存在通过半导体衬底上形成的每个DEEP-NWELL区域在不同电源之间短路的可能性。

10. 发明申请

US20100123515A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 有权
标题翻译：半导体集成电路设备
公开(公告)号：US20100123515A1
公开(公告)日：2010-05-20
申请号：US12608105
申请日：2009-10-29
申请人： TOSHIO SASAKI , Kazuki Fukuoka , Ryo Mori , Yoshihiko Yasu
发明人： TOSHIO SASAKI , Kazuki Fukuoka , Ryo Mori , Yoshihiko Yasu
IPC分类号： G05F1/10
CPC分类号： H03K19/0016 , G06F1/3203 , G06F1/3287 , H01L27/0207 , H01L27/088 , H01L2224/48091 , H01L2924/13091 , Y02D10/171 , Y02D50/20 , H01L2924/00014 , H01L2924/00
摘要： The present invention is directed to perform fine low-voltage control without largely increasing the circuit layout area in a low-power consumption structure. In the case of shifting a region to a low-speed mode, a system controller outputs a request signal and an enable signal to a power switch controller and a low-power drive circuit, respectively, to turn off a power switch and to perform a control so that the voltage level of a virtual reference potential becomes about 0.2 V to about 0.3V. The region operates on voltages between a power supply voltage and a virtual reference potential, so that it is controlled in the low-speed mode.
摘要翻译：本发明旨在在低功耗结构中大幅度地提高电路布局面积的同时执行精细的低电压控制。在将区域移动到低速模式的情况下，系统控制器分别向功率开关控制器和低功率驱动电路输出请求信号和使能信号，以关闭电源开关并执行控制使得虚拟参考电位的电压电平变为约0.2V至约0.3V。该区域在电源电压和虚拟参考电位之间的电压下工作，使得其在低速模式下被控制。

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