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1. 发明申请

US20090061575A1 Display device and fabrication method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20090061575A1
公开(公告)日：2009-03-05
申请号：US12285997
申请日：2008-10-17
申请人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
发明人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
IPC分类号： H01L21/84
CPC分类号： H01L27/1285 , G02F1/13454
摘要： The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO2 film, a precursor film which is constituted of an a-Si layer or a fine particle crystalline p-Si layer is formed and the implantation is applied to the precursor film. Here, an acceleration voltage and a dose quantity are adjusted such that a proper quantity of dopant is dosed in the inside of the precursor film. When the precursor film is melted by laser radiation, the dopant dosed in the precursor film is activated and taken into the precursor.
摘要翻译：本发明提供一种显示装置，其在混合物的基板上形成彼此不同的薄膜晶体管电路和显示装置的制造方法。在具有通过层叠SiN膜和SiO 2膜形成的背景层的玻璃基板上形成由a-Si层或微粒结晶性p-Si层构成的前体膜，并将其注入前体膜。这里，调整加速电压和剂量，使得在前体膜的内部配入适量的掺杂剂。当前体膜通过激光辐射熔化时，投入到前体膜中的掺杂剂被激活并被吸收到前体中。

2. 发明申请

US20050266594A1 Manufacturing method for display device 审中-公开
标题翻译：显示装置的制造方法
公开(公告)号：US20050266594A1
公开(公告)日：2005-12-01
申请号：US11138471
申请日：2005-05-27
申请人： Takuo Kaitoh , Takahiro Kamo , Hidekazu Miyake , Toshihiko Itoga
发明人： Takuo Kaitoh , Takahiro Kamo , Hidekazu Miyake , Toshihiko Itoga
IPC分类号： G02F1/1368 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L51/50 , H05B33/14
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1229 , H01L27/1285
摘要： A manufacturing method for a display device includes: a first thin film transistor that is formed in a first region over a substrate and has a first threshold value according to doping of a first impurity into a semiconductor layer in a channel region; and a second thin film transistor that is formed in a second region over the substrate and has a second threshold value, which is different from the first threshold value, according to doping of a second impurity into a semiconductor layer in a channel region, wherein a crystallized semiconductor layer, which is used in the channel region of the second thin film transistor, is obtained by subjecting a semiconductor layer in the second region to fusing treatment in a state in which the second impurity is applied over the semiconductor layer.
摘要翻译：一种显示装置的制造方法，包括：第一薄膜晶体管，其形成在衬底上的第一区域中，并且具有根据第一杂质掺杂到沟道区域中的半导体层中的第一阈值; 以及第二薄膜晶体管，其形成在所述衬底上的第二区域中，并且具有根据第二杂质掺杂到沟道区域中的半导体层中的与所述第一阈值不同的第二阈值，其中，在第二薄膜晶体管的沟道区域中使用的结晶半导体层通过在第二区域中的半导体层在半导体层上施加第二杂质的状态下进行熔合处理来获得。

3. 发明申请

US20090261329A1 DISPLAY DEVICE 审中-公开
标题翻译：显示设备
公开(公告)号：US20090261329A1
公开(公告)日：2009-10-22
申请号：US12423865
申请日：2009-04-15
申请人： Ichiro YAMAKAWA , Kazuhiko Horikoshi , Yoshiki Yonamoto , Naotoshi Akamatsu , Toshihiko Itoga , Takuo Kaitoh , Takahiro Kamo , Gi-il Kim , Takeshi Sakai , Noboru Ooki
发明人： Ichiro YAMAKAWA , Kazuhiko Horikoshi , Yoshiki Yonamoto , Naotoshi Akamatsu , Toshihiko Itoga , Takuo Kaitoh , Takahiro Kamo , Gi-il Kim , Takeshi Sakai , Noboru Ooki
IPC分类号： H01L33/00 , H01L29/786
CPC分类号： H01L29/78609 , H01L29/66765 , H01L29/78669 , H01L31/02161
摘要： Provided is a display device using a TFT serving as a switching element, in which image deterioration of the display device is prevented by suppressing a photo leakage current to be small, and in particular, in which a density of defects which become positive fixed charges by light present in a protective insulating film of the TFT is defined to suppress the photo leakage current. In the display device using the TFT, the TFT includes an insulating film, an amorphous silicon film, a drain electrode and a source electrode, and a protective insulating film laminated on a gate electrode covering a part of a surface of an insulating substrate in the stated order, in which the protective insulating film includes a defect which becomes a positive fixed charge under light irradiation. A surface density of the defects is preferably 2.5×1010 cm−2 or more to 4.0×1010 cm−2 or less.
摘要翻译：提供一种使用TFT作为开关元件的显示装置，其中通过抑制光泄漏电流小而防止显示装置的图像劣化，特别是其中通过以下方式成为正固定电荷的缺陷的密度定义存在于TFT的保护绝缘膜中的光以抑制光漏电流。在使用TFT的显示装置中，TFT包括绝缘膜，非晶硅膜，漏电极和源电极，以及层叠在覆盖绝缘基板表面的一部分的栅电极上的保护绝缘膜其中保护绝缘膜包括在光照射下变成正固定电荷的缺陷。缺陷的表面密度优选为2.5×10 10 cm -2以上至4.0×10 10 cm -2以下。

4. 发明授权

US07407853B2 Display device and manufacturing method of the same 有权
标题翻译：显示装置及其制造方法相同
公开(公告)号：US07407853B2
公开(公告)日：2008-08-05
申请号：US11077255
申请日：2005-03-11
申请人： Takuo Kaitoh , Eiji Oue , Takahiro Kamo , Yasukazu Kimura , Toshihiko Itoga
发明人： Takuo Kaitoh , Eiji Oue , Takahiro Kamo , Yasukazu Kimura , Toshihiko Itoga
IPC分类号： H01L21/8242
CPC分类号： G02F1/136213 , G02F1/1368 , H01L27/1255 , H01L27/1288
摘要： The invention provides a method of manufacture of a display device which can achieve a reduction of the manufacturing process. In the manufacturing method, a semiconductor layer is formed over an upper surface of a substrate. An insulation film is formed over an upper surface of the semiconductor layer. Using a mask which covers a first region and exposes a second region, an implantation of impurities into the semiconductor layer is performed in the second region through the insulation film. After the mask is removed, a surface of the insulation film is etched in the first region and the second region to an extent that the insulation film in the second region remains, whereby the film thickness of the insulation film in the second region is set to be smaller than the film thickness of the insulation film in the first region.
摘要翻译：本发明提供一种能够实现制造过程减少的显示装置的制造方法。在制造方法中，在衬底的上表面上形成半导体层。在半导体层的上表面上形成绝缘膜。使用覆盖第一区域并露出第二区域的掩模，通过绝缘膜在第二区域中进行杂质注入到半导体层中。在去除掩模之后，在第一区域和第二区域中蚀刻绝缘膜的表面至第二区域中的绝缘膜残留的程度，从而将第二区域中的绝缘膜的膜厚度设定为小于第一区域中的绝缘膜的膜厚度。

5. 发明授权

US07180095B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07180095B2
公开(公告)日：2007-02-20
申请号：US10780724
申请日：2004-02-19
申请人： Takahiro Kamo , Toshihiko Itoga , Takuo Kaitoh , Makoto Ohkura
发明人： Takahiro Kamo , Toshihiko Itoga , Takuo Kaitoh , Makoto Ohkura
IPC分类号： H01L29/15
CPC分类号： H01L29/4908 , H01L27/12 , H01L27/1214
摘要： In a display device including thin film transistors formed on an insulation substrate, the thin film transistor includes a semiconductor layer, a gate electrode and a gate insulation film which is interposed between the semiconductor layer and the gate electrode. The gate insulation film includes at least one layer of deposition film which is deposited by a deposition method, and the carbon concentration of the gate insulation film which is formed without interposing other deposition film deposited by a deposition method between the one deposition film and the semiconductor layer has the distribution in which the carbon concentration is smaller at a side close to the semiconductor layer than at a side remote from the semiconductor layer. Due to such a constitution, it is possible to obviate the elevation of a level of an interface of the insulation film with respect to a poly silicon layer and it is also possible to obviate an increase of fixed charges in the inside of the insulation film in the thin film transistor.
摘要翻译：在包括形成在绝缘基板上的薄膜晶体管的显示装置中，薄膜晶体管包括半导体层，栅电极和栅极绝缘膜，其夹在半导体层和栅电极之间。栅极绝缘膜包括通过沉积方法沉积的至少一层沉积膜，并且形成栅极绝缘膜的碳浓度，而不将其通过沉积方法沉积的其它沉积膜沉积在一个沉积膜和半导体之间在半导体层附近的一侧的碳浓度比远离半导体层的一侧具有更小的分布。由于这样的结构，可以避免绝缘膜相对于多晶硅层的界面的高度的上升，并且还可以避免绝缘膜内部的固定电荷的增加薄膜晶体管。

6. 发明授权

US07727784B2 Display device and fabrication method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07727784B2
公开(公告)日：2010-06-01
申请号：US12285997
申请日：2008-10-17
申请人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
发明人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
IPC分类号： H01L21/00
CPC分类号： H01L27/1285 , G02F1/13454
摘要： The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO2 film, a precursor film which is constituted of an a-Si layer or a fine particle crystalline p-Si layer is formed and the implantation is applied to the precursor film. Here, an acceleration voltage and a dose quantity are adjusted such that a proper quantity of dopant is dosed in the inside of the precursor film. When the precursor film is melted by laser radiation, the dopant dosed in the precursor film is activated and taken into the precursor.
摘要翻译：本发明提供一种显示装置，其在混合物的基板上形成彼此不同的薄膜晶体管电路和显示装置的制造方法。在具有通过层叠SiN膜和SiO 2膜形成的背景层的玻璃基板上形成由a-Si层或微粒结晶性p-Si层构成的前体膜，并将其注入前体膜。这里，调整加速电压和剂量，使得在前体膜的内部配入适量的掺杂剂。当前体膜通过激光辐射熔化时，投入到前体膜中的掺杂剂被激活并被吸收到前体中。

7. 发明授权

US07456433B2 Display device and fabrication method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07456433B2
公开(公告)日：2008-11-25
申请号：US11590882
申请日：2006-11-01
申请人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
发明人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L27/1285 , G02F1/13454
摘要： The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO2 film, a precursor film which is constituted of an a-Si layer or a fine particle crystalline p-Si layer is formed and the implantation is applied to the precursor film. Here, an acceleration voltage and a dose quantity are adjusted such that a proper quantity of dopant is dosed in the inside of the precursor film. When the precursor film is melted by laser radiation, the dopant dosed in the precursor film is activated and taken into the precursor.
摘要翻译：本发明提供一种显示装置，其在混合物的基板上形成彼此不同的薄膜晶体管电路和显示装置的制造方法。在具有通过层叠SiN膜和SiO 2膜形成的背景层的玻璃基板上，由a-Si层或细颗粒结晶p-Si层构成的前体膜并且将植入物施加到前体膜。这里，调整加速电压和剂量，使得在前体膜的内部配入适量的掺杂剂。当前体膜通过激光辐射熔化时，投入到前体膜中的掺杂剂被激活并被吸收到前体中。

8. 发明申请

US20080296583A1 Display Device And Manufacturing Method of The Same 审中-公开
标题翻译：显示器件及其制造方法
公开(公告)号：US20080296583A1
公开(公告)日：2008-12-04
申请号：US12185292
申请日：2008-08-04
申请人： Takuo Kaitoh , Eiji Oue , Takahiro Kamo , Yasukazu Kimura , Toshihiko Itoga
发明人： Takuo Kaitoh , Eiji Oue , Takahiro Kamo , Yasukazu Kimura , Toshihiko Itoga
IPC分类号： H01L33/00
CPC分类号： G02F1/136213 , G02F1/1368 , H01L27/1255 , H01L27/1288
摘要： A display device includes a capacitive element configured so that a portion of a semiconductor layer which is made conductive constitutes one electrode, an insulation film which covers the semiconductor layer constitutes a dielectric film, and a conductive layer which includes a portion which is formed over the insulation film and is overlapped to the one electrode constitutes another electrode. The conductive layer has an extension portion which extends outside of a region where the semiconductor layer is formed from the inside of the region where the semiconductor layer is formed, and is formed over the insulation film. The insulation film has, in a region where the insulation film is overlapped to both the semiconductor layer and the extension portion of the conductive layer, a film thickness which is larger than a film thickness at a portion thereof which is overlapped to the one electrode.
摘要翻译：显示装置包括电容元件，其被配置为使得导电的半导体层的一部分构成一个电极，覆盖半导体层的绝缘膜构成电介质膜，以及导电层，其包括形成在该电极上的部分绝缘膜与一个电极重叠构成另一个电极。导电层具有从形成有半导体层的区域的内部延伸到形成有半导体层的区域的外侧的延伸部，并形成在绝缘膜的上方。绝缘膜在绝缘膜与导电层的半导体层和延伸部分重叠的区域中具有比在与一个电极重叠的部分处的膜厚度大的膜厚度。

9. 发明申请

US20070108448A1 Display device and fabrication method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20070108448A1
公开(公告)日：2007-05-17
申请号：US11590882
申请日：2006-11-01
申请人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
发明人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
IPC分类号： H01L29/10
CPC分类号： H01L27/1285 , G02F1/13454
摘要： The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO2 film, a precursor film which is constituted of an a-Si layer or a fine particle crystalline p-Si layer is formed and the implantation is applied to the precursor film. Here, an acceleration voltage and a dose quantity are adjusted such that a proper quantity of dopant is dosed in the inside of the precursor film. When the precursor film is melted by laser radiation, the dopant dosed in the precursor film is activated and taken into the precursor.
摘要翻译：本发明提供一种显示装置，其在混合物的基板上形成彼此不同的薄膜晶体管电路和显示装置的制造方法。在具有通过层叠SiN膜和SiO 2膜形成的背景层的玻璃基板上，由a-Si层或细颗粒结晶p-Si层构成的前体膜并且将植入物施加到前体膜。这里，调整加速电压和剂量，使得在前体膜的内部配入适量的掺杂剂。当前体膜通过激光辐射熔化时，投入到前体膜中的掺杂剂被激活并被吸收到前体中。

10. 发明申请

US20050211983A1 Display device and manufacturing method of the same 有权
标题翻译：显示装置及其制造方法相同
公开(公告)号：US20050211983A1
公开(公告)日：2005-09-29
申请号：US11077255
申请日：2005-03-11
申请人： Takuo Kaitoh , Eiji Oue , Takahiro Kamo , Yasukazu Kimura , Toshihiko Itoga
发明人： Takuo Kaitoh , Eiji Oue , Takahiro Kamo , Yasukazu Kimura , Toshihiko Itoga
IPC分类号： G02F1/1343 , G02F1/133 , G02F1/1362 , G02F1/1368 , G09F9/00 , G09F9/30 , H01L21/00 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/13 , H01L29/786
CPC分类号： G02F1/136213 , G02F1/1368 , H01L27/1255 , H01L27/1288
摘要： The invention provides a method of manufacture of a display device which can achieve a reduction of the manufacturing process. In the manufacturing method, a semiconductor layer is formed over an upper surface of a substrate. An insulation film is formed over an upper surface of the semiconductor layer. Using a mask which covers a first region and exposes a second region, an implantation of impurities into the semiconductor layer is performed in the second region through the insulation film. After the mask is removed, a surface of the insulation film is etched in the first region and the second region to an extent that the insulation film in the second region remains, whereby the film thickness of the insulation film in the second region is set to be smaller than the film thickness of the insulation film in the first region.
摘要翻译：本发明提供一种能够实现制造过程减少的显示装置的制造方法。在制造方法中，在衬底的上表面上形成半导体层。在半导体层的上表面上形成绝缘膜。使用覆盖第一区域并露出第二区域的掩模，通过绝缘膜在第二区域中进行杂质注入到半导体层中。在去除掩模之后，在第一区域和第二区域中蚀刻绝缘膜的表面至第二区域中的绝缘膜残留的程度，从而将第二区域中的绝缘膜的膜厚度设定为小于第一区域中的绝缘膜的膜厚度。

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