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    • 3. 发明授权
    • New magnetoresistive materials
    • 新型磁阻材料
    • US4476454A
    • 1984-10-09
    • US509739
    • 1983-06-30
    • Joseph A. AboafErik KlokholmThomas R. McGuire
    • Joseph A. AboafErik KlokholmThomas R. McGuire
    • G01R33/09C22C19/03C22C38/00G11B5/39H01L43/08H01L43/10
    • G11B5/3903H01L43/10
    • Devices and circuits are described employing magnetoresistive materials exhibiting a negative .DELTA..rho. effect (.DELTA..rho.=.rho..parallel.-.rho..perp.). In these materials, the electrical resistivity .rho. of the material in a direction perpendicular to the direction of current through the material is greater than the electrical resistivity .rho..parallel. of the material in a direction parallel to the direction of the electrical current through the material. These are ferromagnetic materials exhibiting magnetoresistance in the presence of an electrical current through the material and a magnetic field applied to the material to magnetize it to saturation at room temperature. These devices and circuits have advantages over conventional devices and circuits employing magnetoresistive materials of the conventional type, in which .DELTA..rho. is a positive quantity.
    • 使用具有负DELTA rho效应(DELTA rho = rho PARALLEL-rho ORTHOGONAL)的磁阻材料来描述器件和电路。 在这些材料中,材料在垂直于通过材料的电流方向的方向上的电阻率rho大于材料在平行于通过材料的电流方向的方向上的电阻率rho PARALLEL。 这些是在存在通过材料的电流的情况下表现出磁阻的铁磁材料和施加到材料上的磁场以使其在室温下饱和。 这些器件和电路具有优于常规器件和使用常规类型的磁阻材料的电路的优点,其中DELTA rho是正量的。
    • 4. 发明授权
    • Beam addressable film using amorphous magnetic material
    • 使用非晶磁性材料的光束寻址膜
    • US3949387A
    • 1976-04-06
    • US284512
    • 1972-08-29
    • Praveen ChaudhariJerome J. CuomoRichard J. GambinoThomas R. McGuire
    • Praveen ChaudhariJerome J. CuomoRichard J. GambinoThomas R. McGuire
    • G11C11/14G11B11/10G11B11/105G11B11/11G11C13/06G11C19/08H01F10/00H01F10/12H01F10/13
    • G11B11/11G11B11/10G11B11/10504G11B11/10515G11B11/10517G11B11/10526G11B11/10545G11B11/10591G11C13/06G11C19/0808G11C19/085G11C19/0866H01F10/13H01F10/137
    • A beam addressable file using as a storage medium an amorphous magnetic composition having uniaxial anisotropy. The storage medium can be prepared in thin film or bulk form or as particles in a binder. The storage medium can be comprised of a single element or a multicomponent system where at least one of the components has an unpaired spin so that the composition has a net magnetic moment. The storage comosition exists in a microcrystalline structure (i.e., it has localized atomic ordering over a distance 25-100 angstroms) and also in a substantially amorphous structure (i.e., when the composition has localized atomic ordering only over distances less than 25 angstroms). Binary and ternary compositions, either alloys or compounds, are suitable. particularly good examples are combinations of rare earth elements and transition metal elements. The magnetic properties of these amorphous magnetic compositions are easily changed during fabrication or after fabrication, and the compositions can be doped readily without adversely affecting magnetic properties. Either electron beams or light beams can be used to write information into the storage medium and optical readout is generally preferred. Curie point writing or compensation point writing is used.
    • 使用具有单轴各向异性的非晶磁性组合物作为存储介质的光束可寻址文件。 存储介质可以以薄膜或本体形式或作为粘合剂中的颗粒制备。 存储介质可以由单个元件或多组分系统组成,其中至少一个组件具有不成对的纺丝,使得组合物具有净磁矩。 存储组合存在于微晶结构中(即,其在25-100埃的距离上具有局部原子排列),并且还存在于基本上非晶结构中(即,当组合物仅在小于25埃的距离处具有局部原子排列时)。 二元和三元组合物,合金或化合物都是合适的。 特别好的例子是稀土元素和过渡金属元素的组合。 这些非晶磁性组合物的磁性能在制造过程中或在制造之后容易改变,并且可以容易地掺杂组合物而不会不利地影响磁性能。 可以使用电子束或光束将信息写入存储介质,并且通常优选光学读出。 使用居里点写入或补偿点写入。