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1. 发明授权

US09121515B2 Gate valve unit, substrate processing device and substrate processing method thereof 有权
标题翻译：闸阀单元，基板处理装置及其基板处理方法
公开(公告)号：US09121515B2
公开(公告)日：2015-09-01
申请号：US14005461
申请日：2012-03-06
申请人： Kaoru Yamamoto , Masamichi Hara , Tetsuya Miyashita
发明人： Kaoru Yamamoto , Masamichi Hara , Tetsuya Miyashita
IPC分类号： H01L21/677 , F16K3/30 , F16K51/02 , H01L21/67 , C23C16/44 , H01L21/285 , H01L21/768 , B65G49/00 , F16K3/02 , C23C14/56 , F16K3/18 , C23C16/16
CPC分类号： F16K3/30 , B65G49/00 , C23C14/566 , C23C16/16 , C23C16/4401 , F16K3/0227 , F16K3/182 , F16K51/02 , H01L21/28556 , H01L21/67126 , H01L21/76841
摘要： A substrate processing device includes a depressurizable hot wall chamber having a sidewall with a temperature which becomes higher than room temperature and a first substrate transferring port provided in the sidewall, a depressurizable transfer chamber having a transfer arm mechanism and a second substrate transferring port, and a gate valve unit provided between the hot wall chamber and the transfer chamber. The gate valve unit includes: a housing having a sidewall provided with communicating holes, a first housing substrate transferring port, and a second housing substrate transferring port; a valve body which is elevatable in the housing; and a double sealing structure having a first sealing member and a second sealing member provided at an outer side of the first sealing member. The communicating holes communicate a gap between the first sealing member and the second sealing member with an internal space of the housing.
摘要翻译：基板处理装置包括具有侧壁的可降压热壁室，其温度变得高于室温，以及设置在侧壁中的第一基板输送口，具有转移臂机构和第二基板输送口的可降压输送室，以及设置在所述热壁室和所述传送室之间的闸阀单元。闸阀单元包括：壳体，其具有设置有连通孔的侧壁，第一壳体基板传送端口和第二壳体基板传送端口; 可在壳体内升降的阀体; 以及具有第一密封构件和设置在第一密封构件的外侧的第二密封构件的双重密封结构。连通孔与第一密封构件和第二密封构件之间的间隙与壳体的内部空间连通。

2. 发明申请

US20120014768A1 VACUUM PROCESSING APPARATUS 审中-公开
标题翻译：真空加工设备
公开(公告)号：US20120014768A1
公开(公告)日：2012-01-19
申请号：US13181011
申请日：2011-07-12
申请人： Tetsuya MIYASHITA , Masamichi Hara , Yasushi Mizusawa , Toshiharu Hirata
发明人： Tetsuya MIYASHITA , Masamichi Hara , Yasushi Mizusawa , Toshiharu Hirata
IPC分类号： H01L21/677
CPC分类号： H01L21/67173 , H01L21/67736
摘要： In a vacuum processing apparatus, a process station includes processing regions arranged in a row at intervals to perform vacuum processing on substrates, the substrates being sequentially transferred between the processing regions from upstream to downstream; a first transport unit for transferring the substrates in a first preliminary vacuum chamber to the processing region at an upstream end; a second transport unit arranged between the adjacent processing regions; and a third transport unit for transferring the substrates from the processing region at a downstream end to a second preliminary vacuum chamber. The control unit outputs a control signal such that in the transfer operations in which the substrates are respectively transferred to the subsequent downstream processing regions from the first preliminary vacuum chamber to the processing region at the downstream end, time periods of at least two transfer operations partially or totally overlap with each other.
摘要翻译：在真空处理装置中，处理站包括间隔地配置成一行的处理区域，对基板进行真空处理，基板从上游到下游依次转印在处理区域之间; 用于将第一预备真空室中的基板转移到上游端的处理区域的第一输送单元; 布置在相邻处理区域之间的第二传送单元; 以及用于将基板从下游端的处理区域转移到第二预备真空室的第三输送单元。控制单元输出控制信号，使得在将基板分别从第一预备真空室向下游端的处理区转移到后续的下游处理区域的转印操作中，至少两个转印操作的时间段部分地或完全重叠。

3. 发明授权

US07389677B2 Measuring method and device for liquid crystal viscosity coefficient 失效
标题翻译：液晶粘度系数测量方法及装置
公开(公告)号：US07389677B2
公开(公告)日：2008-06-24
申请号：US10553180
申请日：2004-10-05
申请人： Tatsuo Uchida , Tetsuya Miyashita , Takahiro Ishinabe
发明人： Tatsuo Uchida , Tetsuya Miyashita , Takahiro Ishinabe
IPC分类号： G01N11/00
CPC分类号： G01N11/00 , C09K19/02 , G01N2011/0066 , G01N2011/0073 , G02F1/0072
摘要： In a measuring method for determining values of viscosity coefficients of a liquid crystal by fitting Ericksen-Leslie theoretical values to measured response characteristics, in the first step, ON response characteristics of a liquid crystal cell 10 with homogeneous alignment are initially measured, and a value of a rotational viscosity coefficient γ1 is determined from the measured ON response characteristics. Then, in the second step, OFF response characteristics are measured, and values of Miesovicz shear viscosity coefficients η1 and η2 are determined from the measured OFF response characteristics. In the calculation in the first step, the viscosity coefficients other than γ1 are assigned general values. In the calculation in the second step, γ1 is assigned the value determined in the first step.
摘要翻译：在通过将Ericksen-Leslie理论值拟合到测量响应特性来确定液晶的粘度系数值的测量方法中，在第一步骤中，初始测量具有均匀取向的液晶单元10的ON响应特性，由测量的ON响应特性确定旋转粘度系数γ1 <1>。然后，在第二步骤中，测量OFF响应特性，并根据测量的OFF响应特性确定Miesovicz剪切粘度系数ηa1和η2<2>的值。在第一步的计算中，除了γ1以外的粘度系数被分配一般值。在第二步骤的计算中，为第一步确定的值分配γ1。

4. 发明申请

US20060272395A1 Measuring method and device for liquid crystal viscositycoefficient 失效
标题翻译：液晶粘度系数的测量方法和装置
公开(公告)号：US20060272395A1
公开(公告)日：2006-12-07
申请号：US10553180
申请日：2004-10-05
申请人： Tatsuo Uchida , Tetsuya Miyashita , Takahiro Ishinabe
发明人： Tatsuo Uchida , Tetsuya Miyashita , Takahiro Ishinabe
IPC分类号： G01N11/00
CPC分类号： G01N11/00 , C09K19/02 , G01N2011/0066 , G01N2011/0073 , G02F1/0072
摘要： In a measuring method for determining values of viscosity coefficients of a liquid crystal by fitting Ericksen-Leslie theoretical values to measured response characteristics, in the first step, ON response characteristics of a liquid crystal cell 10 with homogeneous alignment are initially measured, and a value of a rotational viscosity coefficient γ1 is determined from the measured ON response characteristics. Then, in the second step, OFF response characteristics are measured, and values of Miesovicz shear viscosity coefficients η1 and η2 are determined from the measured OFF response characteristics. In the calculation in the first step, the viscosity coefficients other than γ1 are assigned general values. In the calculation in the second step, γ1 is assigned the value determined in the first step.
摘要翻译：在通过将Ericksen-Leslie理论值拟合到测量响应特性来确定液晶的粘度系数值的测量方法中，在第一步骤中，初始测量具有均匀取向的液晶单元10的ON响应特性，由测量的ON响应特性确定旋转粘度系数γ1 <1>。然后，在第二步骤中，测量OFF响应特性，并根据测量的OFF响应特性确定Miesovicz剪切粘度系数ηa1和η2<2>的值。在第一步的计算中，除了γ1以外的粘度系数被分配一般值。在第二步骤的计算中，为第一步确定的值分配γ1。

5. 发明申请

US20100236478A1 VACUUM PROCESSING SYSTEM 审中-公开
标题翻译：真空加工系统
公开(公告)号：US20100236478A1
公开(公告)日：2010-09-23
申请号：US12676000
申请日：2008-08-22
申请人： Tetsuya Miyashita , Noritomo Tada
发明人： Tetsuya Miyashita , Noritomo Tada
IPC分类号： C23C16/00
CPC分类号： C23C16/54 , C23C16/4401 , H01L21/67742
摘要： A vacuum processing system includes CVD processing chambers to perform a CVD process on a wafer W under a vacuum, and a transfer chamber having loading/unloading holes to load/unload the wafer W and being connected to the CVD processing chambers via gate valves G capable of opening/closing the loading/unloading holes. The transfer chamber includes a transfer mechanism to load/unload the wafer W to/from the CVD processing chambers via the loading/unloading holes and the inside of the transfer chamber is maintained in a vacuum state. The vacuum processing system also includes purge-gas discharge members provided near the loading/unloading holes. In a state where the transfer chamber and any one of the processing chambers are communicated with each other by opening of the gate valve G, the purge-gas discharge member discharges a purge gas to the communicated CVD processing chamber via the loading/unloading hole.
摘要翻译：真空处理系统包括在真空下对晶片W执行CVD处理的CVD处理室，以及具有用于加载/卸载晶片W并具有经过闸阀G的能力连接到CVD处理室的装载/卸载孔的传送室打开/关闭装卸孔。传送室包括一个传送机构，用于经由装载/卸载孔将晶片W装载/从CVD处理室中卸载，转印室的内部保持在真空状态。真空处理系统还包括设置在装载/卸载孔附近的吹扫气体排出构件。在传送室和任何一个处理室通过打开闸阀G而彼此连通的状态下，净化气体排放构件经由装载/卸载孔将排出气体排出到连通的CVD处理室。

6. 发明申请

US20090147200A1 VERTICAL ALIGNMENT FILM AND METHOD OF MANUFACTURING THEREOF, VERTICAL ALIGNMENT SUBSTRATE AND METHOD OF MANUFACTURING THEREOF, AND LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
标题翻译：垂直对准膜及其制造方法，垂直对准基板及其制造方法和液晶显示装置
公开(公告)号：US20090147200A1
公开(公告)日：2009-06-11
申请号：US12327585
申请日：2008-12-03
申请人： Kentaro Okuyama , Tatsuo Uchida , Tetsuya Miyashita
发明人： Kentaro Okuyama , Tatsuo Uchida , Tetsuya Miyashita
IPC分类号： G02F1/1337
CPC分类号： G02F1/13378 , G02F2001/133726 , G02F2001/133746
摘要： A highly reliable vertical alignment film for aligning display-use liquid crystal molecules in a direction slightly tilted from the substrate normal line direction and a method of manufacturing the vertical alignment film are provided. A layer composed of a liquid crystalline monomer that has a crystalline framework, and that has characteristics to align the crystalline framework vertically to an interface with a dissimilar material and polymerizable characteristics is formed on a transparent substrate. A magnetic field is applied thereto while the liquid crystal state is maintained, and thereby the liquid crystalline framework of the liquid crystalline monomer is aligned in a direction slightly tilted from the normal line direction of the substrate. In this state, the liquid crystalline monomer is polymerized, and a hardened layer formed from a complex composed of the unreacted liquid crystalline monomer and a liquid crystalline monomer polymer is formed as a vertical alignment film.
摘要翻译：提供了用于使显示用液晶分子沿与基板法线方向稍微倾斜的方向对准的高度可靠的垂直取向膜和制造垂直取向膜的方法。在透明基板上形成由具有结晶框架的液晶单体构成的层，并且具有将结晶框架垂直于与异种材料的界面对准的特性和可聚合特性的层。在保持液晶状态的同时施加磁场，由此使液晶单体的液晶框架沿与基板的法线方向稍微倾斜的方向排列。在这种状态下，液晶单体聚合，形成由未反应的液晶单体和液晶单体聚合物构成的络合物形成的硬化层作为垂直取向膜。

7. 发明申请

US20070146599A1 LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20070146599A1
公开(公告)日：2007-06-28
申请号：US11615760
申请日：2006-12-22
申请人： Tatsuo UCHIDA , Takahiro Ishinabe , Tetsuya Miyashita , Ken Kuboki , Mitsuru Kano , Yuzo Hayashi , Yohei Iida , Mitsuo Oizumi
发明人： Tatsuo UCHIDA , Takahiro Ishinabe , Tetsuya Miyashita , Ken Kuboki , Mitsuru Kano , Yuzo Hayashi , Yohei Iida , Mitsuo Oizumi
IPC分类号： G02F1/1337
CPC分类号： G02F1/1395 , G02F1/133753 , G02F1/133788
摘要： A liquid crystal display device is provided. In the liquid crystal display device, a whole face of an alignment layer disposed above a substrate is uniformly subjected to first alignment treatment (uniform treatment) such as rubbing treatment in an a direction. Second alignment treatment is performed in a b direction (second direction) making an angle of about 90 degrees with the a direction and in a c direction (third direction) opposite to the a direction such that regions narrow than regions subjected to the first alignment treatment. This allows micro-regions subjected to alignment treatment in the a, b, and/or c direction to be present at intersections of zones extending in the b or c direction. The micro-regions are located in light-shielding sections.
摘要翻译：提供一种液晶显示装置。在液晶显示装置中，将配置在基板上方的配向层的整个面均匀地进行沿方向的摩擦处理的第一取向处理（均匀处理）。在b方向（第二方向）上沿与a方向（第三方向）相反的方向与第一取向处理区域相比窄的方向在与b方向（第二方向）成约90度的角度进行第二取向处理。这允许在a，b和/或c方向上进行取向处理的微区域存在于沿b或c方向延伸的区域的交叉处。微区域位于遮光部分。

8. 发明申请

US20070103603A1 Rear projection display screen 审中-公开
标题翻译：背投显示屏
公开(公告)号：US20070103603A1
公开(公告)日：2007-05-10
申请号：US10530294
申请日：2003-10-10
申请人： Baku Katagiri , Tetsuya Miyashita , Takahiro Ishinabe , Tatsuo Uchida
发明人： Baku Katagiri , Tetsuya Miyashita , Takahiro Ishinabe , Tatsuo Uchida
IPC分类号： H04N9/12
CPC分类号： G03B21/62
摘要： A rear projection display screen with a simplified structure that displays a high-quality image without the occurrence of stray light and moiré fringing is provided. The rear projection display screen includes a scattering film 2 that uniformly scatters light incident from an angle in a specific angular range (from −α to −β) within a specific angular region (from β to α), and has a viewing angle of 40° or more in either the vertical direction or the horizontal direction or both the vertical direction and the horizontal direction. The rear projection display screen of the present invention may include a protective plate 3 disposed on the scattering film, if necessary, the protective plate 3 protecting the scattering film.
摘要翻译：提供具有简化结构的背投显示屏，其显示高质量图像而不发生杂散光和莫尔条纹。背投显示屏包括散射膜2，其将特定角度范围（从β到α）中的特定角度范围（从α到β）的角度入射的光均匀地散射，并且具有40°的视角在垂直方向或水平方向上，或者垂直方向和水平方向上都是°。本发明的背投显示屏可以包括设置在散射膜上的保护板3，如果需要，保护板3保护散射膜。

9. 发明申请

US20140003892A1 GATE VALVE UNIT, SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD THEREOF 有权
标题翻译：闸门阀单元，基板处理装置及其基板处理方法
公开(公告)号：US20140003892A1
公开(公告)日：2014-01-02
申请号：US14005461
申请日：2012-03-06
申请人： Kaoru Yamamoto , Masamichi Hara , Tetsuya Miyashita
发明人： Kaoru Yamamoto , Masamichi Hara , Tetsuya Miyashita
IPC分类号： F16K3/30 , B65G49/00
CPC分类号： F16K3/30 , B65G49/00 , C23C14/566 , C23C16/16 , C23C16/4401 , F16K3/0227 , F16K3/182 , F16K51/02 , H01L21/28556 , H01L21/67126 , H01L21/76841
摘要： A substrate processing device includes a depressurizable hot wall chamber having a sidewall with a temperature which becomes higher than room temperature and a first substrate transferring port provided in the sidewall, a depressurizable transfer chamber having a transfer arm mechanism and a second substrate transferring port, and a gate valve unit provided between the hot wall chamber and the transfer chamber. The gate valve unit includes: a housing having a sidewall provided with communicating holes, a first housing substrate transferring port, and a second housing substrate transferring port; a valve body which is elevatable in the housing; and a double sealing structure having a first sealing member and a second sealing member provided at an outer side of the first sealing member. The communicating holes communicate a gap between the first sealing member and the second sealing member with an internal space of the housing.
摘要翻译：基板处理装置包括具有侧壁的可降压热壁室，其温度变得高于室温，以及设置在侧壁中的第一基板输送口，具有转移臂机构和第二基板输送口的可降压输送室，以及设置在所述热壁室和所述传送室之间的闸阀单元。闸阀单元包括：壳体，其具有设置有连通孔的侧壁，第一壳体基板传送端口和第二壳体基板传送端口; 可在壳体内升降的阀体; 以及具有第一密封构件和设置在第一密封构件的外侧的第二密封构件的双重密封结构。连通孔与第一密封构件和第二密封构件之间的间隙与壳体的内部空间连通。

10. 发明申请

US20130081938A1 MAGNETRON SPUTTERING APPARATUS AND METHOD 审中-公开
标题翻译：磁控溅射装置和方法
公开(公告)号：US20130081938A1
公开(公告)日：2013-04-04
申请号：US13630629
申请日：2012-09-28
申请人： Shigeru MIZUNO , Hiroyuki TOSHIMA , Atsushi GOMI , Tetsuya MIYASHITA , Tatsuo HATANO , Yasushi MIZUSAWA
发明人： Shigeru MIZUNO , Hiroyuki TOSHIMA , Atsushi GOMI , Tetsuya MIYASHITA , Tatsuo HATANO , Yasushi MIZUSAWA
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , H01J37/32688 , H01J37/3405 , H01J37/3452 , H01J37/3455
摘要： A magnetron sputtering apparatus in which a target is disposed to face a substrate includes a magnet array body including a magnet group arranged on a base body, and a rotating mechanism for rotating the magnet array body around an axis perpendicular to the substrate. In the magnet array body, N poles and S poles constituting the magnet group are arranged to be spaced from each other along a surface facing the target such that a plasma is generated based on a drift of electrons by a cusp magnetic field. Magnets located on the outermost periphery of the magnet group are arranged in a line to prevent the electrons from being released from constraint of the cusp magnetic field and jumping out of the cusp magnetic field. A distance between the target and the substrate during sputtering is equal to or less than 30 mm.
摘要翻译：靶设置在与基板相对的磁控管溅射装置中，具有包括配置在基体上的磁体组的磁体排列体以及使磁体排列体绕垂直于基板的轴旋转的旋转机构。在磁体阵列体中，构成磁体组的N极和S极被布置为沿着面向靶的表面彼此间隔开，使得基于尖点磁场的电子漂移产生等离子体。位于磁体组的最外周的磁铁被排列成一行，以防止电子从尖点磁场的限制中脱离，并跳出尖端磁场。在溅射期间靶和衬底之间的距离等于或小于30mm。

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