会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明申请
    • VACUUM PROCESSING APPARATUS
    • 真空加工设备
    • US20120014768A1
    • 2012-01-19
    • US13181011
    • 2011-07-12
    • Tetsuya MIYASHITAMasamichi HaraYasushi MizusawaToshiharu Hirata
    • Tetsuya MIYASHITAMasamichi HaraYasushi MizusawaToshiharu Hirata
    • H01L21/677
    • H01L21/67173H01L21/67736
    • In a vacuum processing apparatus, a process station includes processing regions arranged in a row at intervals to perform vacuum processing on substrates, the substrates being sequentially transferred between the processing regions from upstream to downstream; a first transport unit for transferring the substrates in a first preliminary vacuum chamber to the processing region at an upstream end; a second transport unit arranged between the adjacent processing regions; and a third transport unit for transferring the substrates from the processing region at a downstream end to a second preliminary vacuum chamber. The control unit outputs a control signal such that in the transfer operations in which the substrates are respectively transferred to the subsequent downstream processing regions from the first preliminary vacuum chamber to the processing region at the downstream end, time periods of at least two transfer operations partially or totally overlap with each other.
    • 在真空处理装置中,处理站包括间隔地配置成一行的处理区域,对基板进行真空处理,基板从上游到下游依次转印在处理区域之间; 用于将第一预备真空室中的基板转移到上游端的处理区域的第一输送单元; 布置在相邻处理区域之间的第二传送单元; 以及用于将基板从下游端的处理区域转移到第二预备真空室的第三输送单元。 控制单元输出控制信号,使得在将基板分别从第一预备真空室向下游端的处理区转移到后续的下游处理区域的转印操作中,至少两个转印操作的时间段部分地 或完全重叠。
    • 4. 发明申请
    • Thin Film Forming Method and Thin Film Forming Apparatus
    • 薄膜成型方法和薄膜成型装置
    • US20080050538A1
    • 2008-02-28
    • US11573272
    • 2005-07-19
    • Toshiharu Hirata
    • Toshiharu Hirata
    • C23C16/455H01L21/28H01L21/285H01L21/31H01L21/316
    • C23C16/45527C23C16/4412C23C16/45542C23C16/45557H01L21/28562H01L21/3141
    • A thin film formation method is used for forming a thin film by providing a conductance valve on an exhaust path connecting a depressurizable processing chamber and a vacuum pump, arranging a processing object substrate inside the processing chamber, performing once or plural times a cycle including a first step of supplying a first reactive gas and a second step of supplying a second reactive gas into the processing chamber during a film formation processing period to cause a chemical reaction between the first reactive gas and the second reactive gas, and using the chemical reaction to form the thin film on the substrate. The thin film formation method includes a first process of supplying into the processing chamber a predetermined gas by a specified flow while exhausting the inside of the processing chamber, and determining a reference value that is equal to a valve opening level of the conductance valve causing pressure inside the processing chamber to substantially match a specified value, the first process being performed during a preparation period before the film formation processing period starts; and a second process of maintaining the valve opening level of the conductance valve at the reference value at least during the first step and the second step of the cycle performed during the film formation processing period.
    • 通过在连接可降压处理室和真空泵的排气路径上设置导电阀,在处理室内配置处理对象基板,进行一次或多次循环,使用薄膜形成方法来形成薄膜,该循环包括 提供第一反应气体的第一步骤和在成膜处理周期期间将第二反应气体供应到处理室中以引起第一反应气体和第二反应气体之间的化学反应的第二步骤,并且使用化学反应 在基板上形成薄膜。 薄膜形成方法包括在排出处理室内部时以特定流量向处理室供给预定气体的第一过程,并且确定等于导通阀的开阀水平的基准值,引起压力 在处理室内部以基本上匹配指定值,第一处理在成膜处理周期开始之前的准备期间执行; 以及至少在成膜处理期间执行的循环的第一步骤和第二步骤期间将导通阀的阀开度水平维持在基准值的第二过程。
    • 5. 发明授权
    • Thin film forming method and thin film forming apparatus
    • 薄膜形成方法和薄膜形成装置
    • US07972649B2
    • 2011-07-05
    • US11573272
    • 2005-07-19
    • Toshiharu Hirata
    • Toshiharu Hirata
    • C23C16/52
    • C23C16/45527C23C16/4412C23C16/45542C23C16/45557H01L21/28562H01L21/3141
    • A thin film formation method is used for forming a thin film by providing a conductance valve on an exhaust path connecting a depressurizable processing chamber and a vacuum pump, arranging a processing object substrate inside the processing chamber, performing once or plural times a cycle including a first step of supplying a first reactive gas and a second step of supplying a second reactive gas into the processing chamber during a film formation processing period to cause a chemical reaction between the first reactive gas and the second reactive gas, and using the chemical reaction to form the thin film on the substrate. The thin film formation method includes a first process of supplying into the processing chamber a predetermined gas by a specified flow while exhausting the inside of the processing chamber, and determining a reference value that is equal to a valve opening level of the conductance valve causing pressure inside the processing chamber to substantially match a specified value, the first process being performed during a preparation period before the film formation processing period starts; and a second process of maintaining the valve opening level of the conductance valve at the reference value at least during the first step and the second step of the cycle performed during the film formation processing period.
    • 通过在连接可降压处理室和真空泵的排气路径上设置导电阀,在处理室内配置处理对象基板,进行一次或多次循环,使用薄膜形成方法来形成薄膜,该循环包括 提供第一反应气体的第一步骤和在成膜处理周期期间将第二反应气体供应到处理室中以引起第一反应气体和第二反应气体之间的化学反应的第二步骤,并且使用化学反应 在基板上形成薄膜。 薄膜形成方法包括在排出处理室内部时以特定流量向处理室供给预定气体的第一过程,并且确定等于导通阀的开阀水平的基准值,引起压力 在处理室内部以基本上匹配指定值,第一处理在成膜处理周期开始之前的准备期间执行; 以及至少在成膜处理期间执行的循环的第一步骤和第二步骤期间将导通阀的阀开度水平维持在基准值的第二过程。