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1. 发明申请

US20120014768A1 VACUUM PROCESSING APPARATUS 审中-公开
标题翻译：真空加工设备
公开(公告)号：US20120014768A1
公开(公告)日：2012-01-19
申请号：US13181011
申请日：2011-07-12
申请人： Tetsuya MIYASHITA , Masamichi Hara , Yasushi Mizusawa , Toshiharu Hirata
发明人： Tetsuya MIYASHITA , Masamichi Hara , Yasushi Mizusawa , Toshiharu Hirata
IPC分类号： H01L21/677
CPC分类号： H01L21/67173 , H01L21/67736
摘要： In a vacuum processing apparatus, a process station includes processing regions arranged in a row at intervals to perform vacuum processing on substrates, the substrates being sequentially transferred between the processing regions from upstream to downstream; a first transport unit for transferring the substrates in a first preliminary vacuum chamber to the processing region at an upstream end; a second transport unit arranged between the adjacent processing regions; and a third transport unit for transferring the substrates from the processing region at a downstream end to a second preliminary vacuum chamber. The control unit outputs a control signal such that in the transfer operations in which the substrates are respectively transferred to the subsequent downstream processing regions from the first preliminary vacuum chamber to the processing region at the downstream end, time periods of at least two transfer operations partially or totally overlap with each other.
摘要翻译：在真空处理装置中，处理站包括间隔地配置成一行的处理区域，对基板进行真空处理，基板从上游到下游依次转印在处理区域之间; 用于将第一预备真空室中的基板转移到上游端的处理区域的第一输送单元; 布置在相邻处理区域之间的第二传送单元; 以及用于将基板从下游端的处理区域转移到第二预备真空室的第三输送单元。控制单元输出控制信号，使得在将基板分别从第一预备真空室向下游端的处理区转移到后续的下游处理区域的转印操作中，至少两个转印操作的时间段部分地或完全重叠。

2. 发明授权

US08859422B2 Method of forming copper wiring and method and system for forming copper film 有权
标题翻译：形成铜线的方法及铜膜形成方法及系统
公开(公告)号：US08859422B2
公开(公告)日：2014-10-14
申请号：US13359138
申请日：2012-01-26
申请人： Tadahiro Ishizaka , Atsushi Gomi , Takara Kato , Osamu Yokoyama , Takashi Sakuma , Chiaki Yasumuro , Hiroyuki Toshima , Tatsuo Hatano , Yasushi Mizusawa , Masamichi Hara , Kenzi Suzuki
发明人： Tadahiro Ishizaka , Atsushi Gomi , Takara Kato , Osamu Yokoyama , Takashi Sakuma , Chiaki Yasumuro , Hiroyuki Toshima , Tatsuo Hatano , Yasushi Mizusawa , Masamichi Hara , Kenzi Suzuki
IPC分类号： H01L21/44
CPC分类号： H01L21/02104 , C23C14/025 , C23C14/046 , C23C14/345 , C23C14/541 , C23C14/5806 , C23C16/16 , H01J37/32899 , H01J37/34
摘要： A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs.
摘要翻译：提供了一种在衬底中形成的沟槽或孔中形成Cu布线的方法。该方法包括在沟槽或孔的表面上形成阻挡膜，在阻挡膜上形成Ru膜，并且通过在使衬底退火的同时在PVD膜上形成Cu膜而将Cu嵌入沟槽或孔中，使得发生铜进入沟槽或孔的迁移。

3. 发明授权

US08034406B2 Integrated substrate processing in a vacuum processing tool 有权
标题翻译：在真空加工工具中集成基板加工
公开(公告)号：US08034406B2
公开(公告)日：2011-10-11
申请号：US11526767
申请日：2006-09-26
申请人： Tadahiro Ishizaka , Masamichi Hara , Yasushi Mizusawa
发明人： Tadahiro Ishizaka , Masamichi Hara , Yasushi Mizusawa
IPC分类号： C23C16/00 , C23C14/00
CPC分类号： C23C16/54 , C23C14/566
摘要： A method and system are provided for integrated substrate processing in Cu metallization. The method includes providing a substrate in a vacuum processing tool containing a plurality of processing systems configured to process the substrate and a substrate transfer system configured to transfer the substrate under vacuum conditions between the plurality of processing systems, and performing an integrated deposition process on the substrate. The plurality of processing systems and the substrate transfer system maintain a base pressure of background gases at 6.8×10−8 Ton or lower, preferably 5×10−8 Torr or lower, during the integrated deposition process. According to one embodiment, the integrated process includes depositing a barrier metal layer on the substrate, and depositing a Cu layer on the barrier metal layer. According to another embodiment, the integrated process further includes depositing a Ru layer on the barrier metal layer, and depositing a Cu layer on the Ru layer.
摘要翻译：提供了用于Cu金属化中的集成基板处理的方法和系统。该方法包括在真空处理工具中提供衬底，该真空处理工具包含配置成处理衬底的多个处理系统和被配置为在多个处理系统之间的真空条件下传送衬底的衬底传送系统，以及对基质。在整个沉积过程中，多个处理系统和基板传送系统将背景气体的基础压力保持在6.8×10-8吨或更低，优选5×10-8托或更低。根据一个实施例，集成工艺包括在衬底上沉积阻挡金属层，以及在阻挡金属层上沉积Cu层。根据另一实施例，集成工艺还包括在阻挡金属层上沉积Ru层，以及在Ru层上沉积Cu层。

4. 发明授权

US09062374B2 Method for film formation, apparatus for film formation, and computer-readable recording medium 有权
标题翻译：成膜方法，成膜装置和计算机可读记录介质
公开(公告)号：US09062374B2
公开(公告)日：2015-06-23
申请号：US12933979
申请日：2009-01-23
申请人： Masamichi Hara , Yasushi Mizusawa , Satoshi Taga , Atsushi Gomi , Tatsuo Hatano
发明人： Masamichi Hara , Yasushi Mizusawa , Satoshi Taga , Atsushi Gomi , Tatsuo Hatano
IPC分类号： C23C16/16 , C23C16/455 , H01L21/285
CPC分类号： C23C16/45559 , C23C16/16 , H01L21/28562
摘要： Disclosed is a method for film formation, comprising allowing a treatment gas stream containing a metal carbonyl-containing treatment gas and a carbon monoxide-containing carrier gas to flow into a region on the upper outside of the outer periphery of a substrate to be treated in a diameter direction of the substrate while avoiding the surface of the substrate and diffusing the metal carbonyl from the treatment gas stream into the surface of the substrate to form a metal film on the surface of the substrate.
摘要翻译：公开了一种成膜方法，包括使含有含羰基金属的处理气体和含一氧化碳的载气的处理气流流入待处理的基板的外周的上侧的区域衬底的直径方向，同时避免衬底的表面并将金属羰基从处理气流扩散到衬底的表面中，以在衬底的表面上形成金属膜。

5. 发明授权

US08408025B2 Raw material recovery method and trapping mechanism for recovering raw material 有权
标题翻译：原料回收方法及原料回收机制
公开(公告)号：US08408025B2
公开(公告)日：2013-04-02
申请号：US13057372
申请日：2009-08-04
申请人： Atsushi Gomi , Yasushi Mizusawa , Tatsuo Hatano , Masamichi Hara , Kaoru Yamamoto , Chiaki Yasumuro
发明人： Atsushi Gomi , Yasushi Mizusawa , Tatsuo Hatano , Masamichi Hara , Kaoru Yamamoto , Chiaki Yasumuro
IPC分类号： F25J1/00 , F25J1/02 , C23C16/00 , B01D47/00 , B01J19/00
CPC分类号： C23C16/4412 , B01D53/002 , B01D53/62 , B01D53/75 , B01D2257/706 , B01D2258/0216 , B01D2259/416 , C23C16/16 , Y02C20/30
摘要： A raw material recovery method for recovering a raw material of an organic metallic compound, which has the property of being stable toward a specific refrigerant without being decomposed thereby, from exhaust gas discharged from a treatment container in which a metallic thin film is formed on the surface of an object to be treated by using source gas obtained by vaporizing the raw material is characterized by being provided with a solidification step for solidifying the unreacted source gas by cooling the exhaust gas by bringing the exhaust gas into contact with the refrigerant and reprecipitating the raw material, and a recovery step for separating and recovering the raw material reprecipitated in the solidification step from the refrigerant. To provide a method for controlling an exhaust gas flow rate so that flow of gas in a processing chamber becomes uniform.
摘要翻译：一种原料回收方法，用于从其中形成有金属薄膜的处理容器排出的废气中回收具有对特定制冷剂稳定的特性的有机金属化合物的原料，通过使用通过蒸发原料获得的源气体处理的物体的表面的特征在于具有固化步骤，用于通过使废气与制冷剂接触而冷却排气来固化未反应的源气体，并再次沉淀原料和用于分离和回收在固化步骤中从制冷剂中再沉淀的原料的回收步骤。提供一种用于控制废气流量使得处理室中的气体流变得均匀的方法。

6. 发明授权

US08277889B2 Film formation method and film formation apparatus 有权
标题翻译：成膜方法和成膜装置
公开(公告)号：US08277889B2
公开(公告)日：2012-10-02
申请号：US12443487
申请日：2008-02-19
申请人： Atsushi Gomi , Yasushi Mizusawa , Tatsuo Hatano , Masamichi Hara , Osamu Yokoyama , Satoshi Taga
发明人： Atsushi Gomi , Yasushi Mizusawa , Tatsuo Hatano , Masamichi Hara , Osamu Yokoyama , Satoshi Taga
IPC分类号： C23C16/04 , C23C16/16 , C23C16/46
CPC分类号： C23C16/16 , C23C16/4585 , C23C16/4586 , C23C16/52 , H01J37/32449 , H01J37/32623 , H01J37/32642 , H01L21/28562 , H01L21/76873
摘要： A film formation method is disclosed for depositing a metal film on a target substrate by supplying a metal carbonyl source in gas phase to a surface of the target substrate and decomposing the source near the surface of the target substrate. The method includes a step of preferentially decomposing the metal carbonyl source in an area near the outer peripheral portion of the target substrate when the metal film is being deposited on the surface of the target substrate. As a result, a CO concentration in the atmosphere is increased locally near the outer peripheral portion of the target substrate and the depositing of the metal film on the outer peripheral portion is better controlled.
摘要翻译：公开了一种薄膜形成方法，用于通过将气相中的羰基金属源供给到目标基板的表面并在目标基板的表面附近分解源，在目标基板上沉积金属膜。该方法包括当金属膜沉积在目标衬底的表面上时，优选在目标衬底的外围部分附近的区域中分解金属羰基源的步骤。结果，气氛中的CO浓度在目标基板的外周部分局部增加，并且更好地控制金属膜在外周部分上的沉积。

7. 发明申请

US20110263123A1 PLACING TABLE STRUCTURE 审中-公开
标题翻译：配置表结构
公开(公告)号：US20110263123A1
公开(公告)日：2011-10-27
申请号：US13057380
申请日：2009-08-04
申请人： Atsushi Gomi , Yasushi Mizusawa , Tatsuo Hatano , Masamichi Hara , Kaoru Yamamoto , Satoshi Taga
发明人： Atsushi Gomi , Yasushi Mizusawa , Tatsuo Hatano , Masamichi Hara , Kaoru Yamamoto , Satoshi Taga
IPC分类号： H01L21/3205 , C23C16/458
CPC分类号： C23C16/52 , C23C16/16 , C23C16/45514 , C23C16/45521 , C23C16/45597 , C23C16/4585 , H01L21/67017 , H01L21/68785
摘要： Provided is a placing table structure which is disposed in a processing container and has a subject to be processed thereon so as to form a thin film on the subject in the processing container by using raw material gas which generates thermal decomposition reaction having reversibility. The placing table structure is provided with a placing table for placing the subject to be processed on a placing surface, i.e., an upper surface of the placing table structure, and a decomposition restraint gas supply means which is arranged in the placing table for the purpose of supplying decomposition restraint gas, which restraints thermal decomposition of the raw material gas, toward a peripheral section of the subject placed on the placing surface of the placing table.
摘要翻译：提供了一种放置台结构，其设置在处理容器中并且要对其进行处理，以便通过使用产生具有可逆性的热分解反应的原料气体在处理容器中在被检体上形成薄膜。放置台结构设置有用于将待处理对象放置在放置表面（即，放置台结构的上表面）的放置台和设置在放置台中的分解限制气体供应装置提供限制原料气体的热分解的分解约束气体朝向放置在放置台的放置面的被处理体的周边部分。

8. 发明申请

US20070215048A1 Method and apparatus for reducing particle contamination in a deposition system 有权
标题翻译：用于减少沉积系统中的颗粒污染的方法和装置
公开(公告)号：US20070215048A1
公开(公告)日：2007-09-20
申请号：US11377920
申请日：2006-03-16
申请人： Kenji Suzuki , Atsushi Gomi , Masamichi Hara , Yasushi Mizusawa
发明人： Kenji Suzuki , Atsushi Gomi , Masamichi Hara , Yasushi Mizusawa
IPC分类号： C23C16/00
CPC分类号： C23C16/16 , C23C16/4481 , C23C16/45565 , C23C16/45568 , C23C16/45574
摘要： A method and system is described for reducing particle contamination of a substrate in a deposition system. The deposition system comprises one or more particle diffusers disposed therein and configured to prevent or partially prevent the passage of film precursor particles, or break-up or partially break-up film precursor particles. The particle diffuser may be installed in the film precursor evaporation system, or the vapor delivery system, or the vapor distribution system, or two or more thereof.
摘要翻译：描述了用于减少沉积系统中的基底的颗粒污染的方法和系统。沉积系统包括设置在其中的一个或多个颗粒扩散器，并且构造成防止或部分地防止膜前体颗粒通过，或破坏或部分破坏膜前体颗粒。颗粒扩散器可以安装在膜前体蒸发系统或蒸汽输送系统或蒸汽分配系统中，或者其两个或多个。

9. 发明授权

US08992686B2 Mounting table structure, film forming apparatus and raw material recovery method 有权
标题翻译：安装台结构，成膜设备和原料回收方法
公开(公告)号：US08992686B2
公开(公告)日：2015-03-31
申请号：US13225049
申请日：2011-09-02
申请人： Atsushi Gomi , Yasushi Mizusawa , Tatsuo Hatano , Masamichi Hara , Kaoru Yamamoto , Satoshi Taga , Chiaki Yasumuro
发明人： Atsushi Gomi , Yasushi Mizusawa , Tatsuo Hatano , Masamichi Hara , Kaoru Yamamoto , Satoshi Taga , Chiaki Yasumuro
IPC分类号： C23C16/50 , C23C16/00 , C23F1/00 , H01L21/306 , H01L21/687 , C23C16/44 , C23C16/458 , H01L21/67
CPC分类号： H01L21/68785 , C23C16/4404 , C23C16/4412 , C23C16/4585 , C23C16/4586 , H01L21/67109
摘要： Provided is a mounting table structure for use in forming a thin film on a surface of a target object mounted on the mounting table structure by using a raw material gas including an organic metal compound in a processing chamber. The mounting table structure includes: a mounting table main body which mounts thereon the target object and has therein a heater; and a base which supports the mounting table main body while surrounding a side surface and a bottom surface of the mounting table main body, the base having therein a coolant path where a coolant flows therethrough and being maintained at a temperature higher than the solidification temperature or the liquefaction temperature of the raw material gas, but lower than the decomposition temperature of the raw material gas.
摘要翻译：提供了一种用于在安装在安装台结构上的目标物体的表面上通过在处理室中使用包含有机金属化合物的原料气体来形成薄膜的安装台结构。安装台结构包括：安装台主体，其安装在其上并具有加热器; 以及基部，其在围绕安装台主体的侧表面和底表面的同时支撑安装台主体，底座具有冷却剂流过其中并且保持在高于凝固温度的温度的冷却剂路径，原料气体的液化温度低于原料气体的分解温度。

10. 发明授权

US07959985B2 Method of integrating PEALD Ta-containing films into Cu metallization 有权
标题翻译：将含有PEALD的含Ta的膜整合到Cu金属化中的方法
公开(公告)号：US07959985B2
公开(公告)日：2011-06-14
申请号：US11378263
申请日：2006-03-20
申请人： Tadahiro Ishizaka , Tsukasa Matsuda , Masamichi Hara , Jacques Faguet , Yasushi Mizusawa
发明人： Tadahiro Ishizaka , Tsukasa Matsuda , Masamichi Hara , Jacques Faguet , Yasushi Mizusawa
IPC分类号： C23C16/00 , H05H1/00
CPC分类号： C23C16/45542 , C23C16/32 , C23C16/36 , C23C16/509 , C23C16/56
摘要： A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.
摘要翻译：用于形成可用作Cu金属化阻挡膜的改性TaC或TaCN膜的方法。该方法包括将基板设置在等离子体增强原子层沉积（PEALD）系统的处理室中，其被配置为执行PEALD工艺，使用PEALD工艺在基板上沉积TaC或TaCN膜，以及修改沉积的TaC或TaCN膜通过将沉积的TaC或TaCN膜暴露于等离子体激发的氢或原子氢或其组合，以便从至少沉积的TaCN膜的等离子体暴露部分除去碳。该方法还包括在改性的TaCN膜上形成金属膜，其中改性的TaCN膜比沉积的TaCN膜提供比金属膜更强的附着力。根据一个实施方案，通过TAIMATA和等离子体激发氢的交替曝光沉积TaCN膜。

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