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1. 发明授权

US5652178A Method of manufacturing a light emitting diode using LPE at different temperatures 失效
标题翻译：在不同温度下使用LPE制造发光二极管的方法
公开(公告)号：US5652178A
公开(公告)日：1997-07-29
申请号：US466279
申请日：1995-06-06
申请人： Tadasu Izumi , Masamichi Harada , Yukari Inoguchi
发明人： Tadasu Izumi , Masamichi Harada , Yukari Inoguchi
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/0062
摘要： A method of manufacturing a light emitting diode, which includes the steps of bringing a semiconductor substrate of p-type or n-type into contact with a growth solution at a high temperature and thereafter, lowering the temperature so as to form a monocrystalline epitaxial layer of the same type as the semiconductor substrate on the semiconductor substrate, subsequently, further lowering the above temperature to form a first monocrystalline epitaxial layer of a reverse type to the epitaxial layer on the epitaxial layer and then, cutting off the growth solution to form an epitaxial wafer as a result, a growth solution to contact the first epitaxial layer of a epitaxial wafer at a high temperature, and thereafter, the temperature is lowered to form a second monocrystalline epitaxial layer of the same kind and type as the first epitaxial layer on the first epitaxial layer.
摘要翻译：一种制造发光二极管的方法，其包括以下步骤：使p型或n型半导体衬底在高温下与生长溶液接触，然后降低温度以形成单晶外延层与半导体衬底上的半导体衬底相同的类型，随后进一步降低上述温度以形成与外延层上的外延层相反类型的第一单晶外延层，然后切断生长溶液以形成外延晶片的结果是在高温下与外延晶片的第一外延层接触的生长溶液，然后降低温度以形成与第一外延层相同种类和类型的第二单晶外延层，第一个外延层。

2. 发明申请

US20070194296A1 Light emitting diode and manufacturing method therefor 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：US20070194296A1
公开(公告)日：2007-08-23
申请号：US11709150
申请日：2007-02-22
申请人： Tetsuroh Murakami , Yukari Inoguchi , Nobuyuki Watanabe , Taeko Chiba
发明人： Tetsuroh Murakami , Yukari Inoguchi , Nobuyuki Watanabe , Taeko Chiba
IPC分类号： H01L29/06
CPC分类号： H01L33/22 , H01L33/30
摘要： A light emitting diode is composed of a p-type GaP substrate 12 and layers laminated on the p-type GaP substrate 12, including a p-type GaP contact layer 13, a p-type AlInP second cladding layer 14, a p-type AlGaInP active layer 15, an n-type AlInP first cladding layer 16 and an n-type AlGaAs current diffusion layer 17. The entire lateral surfaces of the p-type GaP substrate 12 are processed into a roughened state by a dicing blade. The light emitting diode has high light intensity and its surface can be roughened under any circumstances regardless of its material and orientation so that characteristic failures can be prevented from occurring.
摘要翻译：发光二极管由p型GaP基板12和层叠在p型GaP基板12上的层构成，包括p型GaP接触层13，p型AlInP第二包覆层14，p型 AlGaInP有源层15，n型AlInP第一包层16和n型AlGaAs电流扩散层17。 p型GaP基板12的整个侧表面由切割刀片加工成粗糙状态。发光二极管具有高的光强度，并且在任何情况下，其表面可以粗糙化，而不管其材料和取向如何，从而可以防止发生特性故障。

3. 发明授权

US5707891A Method of manufacturing a light emitting diode 失效
标题翻译：制造发光二极管的方法
公开(公告)号：US5707891A
公开(公告)日：1998-01-13
申请号：US798130
申请日：1991-11-26
申请人： Tadasu Izumi , Masamichi Harada , Yukari Inoguchi
发明人： Tadasu Izumi , Masamichi Harada , Yukari Inoguchi
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/0062 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , Y10S148/066 , Y10S148/119
摘要： A method of manufacturing a light emitting diode, which includes the steps of bringing a semiconductor substrate of p-type or n-type into contact with a growth solution at a high temperature and thereafter, lowering the temperature so as to form a monocrystalline epitaxial layer of the same type as the semiconductor substrate on the semiconductor substrate, subsequently, further lowering the above temperature to form a first monocrystalline epitaxial layer of a reverse type to the epitaxial layer on the epitaxial layer and then, cutting off the growth solution to form an epitaxial wafer as a result, a growth solution to contact the first epitaxial layer of a epitaxial wafer at a high temperature, and thereafter, the temperature is lowered to form a second monocrystalline epitaxial layer of the same kind and type as the first epitaxial layer on the first epitaxial layer.
摘要翻译：一种制造发光二极管的方法，其包括以下步骤：使p型或n型半导体衬底在高温下与生长溶液接触，然后降低温度以形成单晶外延层与半导体衬底上的半导体衬底相同的类型，随后进一步降低上述温度以形成与外延层上的外延层相反类型的第一单晶外延层，然后切断生长溶液以形成外延晶片的结果是在高温下与外延晶片的第一外延层接触的生长溶液，然后降低温度以形成与第一外延层相同种类和类型的第二单晶外延层，第一个外延层。

4. 发明授权

US07465962B2 Semiconductor light emitting device and manufacturing method therefor 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07465962B2
公开(公告)日：2008-12-16
申请号：US11477654
申请日：2006-06-30
申请人： Eiji Kametani , Yukari Inoguchi , Nobuyuki Watanabe , Tetsuroh Murakami
发明人： Eiji Kametani , Yukari Inoguchi , Nobuyuki Watanabe , Tetsuroh Murakami
IPC分类号： H01L33/00
CPC分类号： H01L33/16 , H01L33/0079
摘要： A semiconductor light emitting device in the present invention is formed by laminating an epitaxial layer 30 including an AlGaInP active layer and a second wafer 23 which transmits light derived from the active layer. The crystal axes of the epitaxial layer 30 and the second wafer 23 are generally aligned with each other and are in the range of −15° to +15° with respect to a lateral face {100} of the second wafer 23. This semiconductor light emitting device, which is a joining type with high external emission efficiency, allows uniform wafer bonding to be achieved over the entire wafer face with ease and with a high yield without causing bonding failure and wafer cracks.
摘要翻译：本发明的半导体发光器件通过层叠包含AlGaInP有源层的外延层30和透射从有源层衍生的光的第二晶片23而形成。外延层30和第二晶片23的晶轴大致相互对准，并且相对于第二晶片23的侧面{100}在-15°至+ 15°的范围内。该半导体光作为具有高外部发光效率的接合型发光器件，可以容易且高产率地在整个晶片面上实现均匀的晶片接合，而不会引起接合故障和晶片裂纹。

5. 发明申请

US20070023772A1 Semiconductor light-emitting device and method of manufacturing same 审中-公开
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US20070023772A1
公开(公告)日：2007-02-01
申请号：US11492045
申请日：2006-07-25
申请人： Nobuyuki Watanabe , Yukari Inoguchi , Tetsuroh Murakami
发明人： Nobuyuki Watanabe , Yukari Inoguchi , Tetsuroh Murakami
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/025
摘要： A semiconductor light-emitting device has a first conductivity type semiconductor layer (3, 4), a luminous layer (5) formed on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer (8) formed on the luminous layer, and a transmissive substrate (9) which is formed on the second conductivity type semiconductor layer (8) and is pervious to light coming from the luminous layer (5). The transmissive substrate (9) has a carrier concentration lower than that of the second conductivity type semiconductor layer (8).
摘要翻译：半导体发光器件具有第一导电型半导体层（3,4），形成在第一导电型半导体层上的发光层（5），形成在发光层上的第二导电型半导体层（8），以及形成在第二导电型半导体层（8）上并透过来自发光层（5）的光的透射基板（9）。透射基板（9）的载流子浓度低于第二导电型半导体层（8）的载流子浓度。

6. 发明申请

US20070252158A1 Semiconductor light-emitting device and method of manufacturing the same 审中-公开
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US20070252158A1
公开(公告)日：2007-11-01
申请号：US11790595
申请日：2007-04-26
申请人： Yukari Inoguchi , Nobuyuki Watanabe , Tetsuroh Murakami , Taeko Chiba
发明人： Yukari Inoguchi , Nobuyuki Watanabe , Tetsuroh Murakami , Taeko Chiba
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/025
摘要： A semiconductor light-emitting device has a first conductivity type semiconductor layer, a luminous layer formed on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer formed on the luminous layer, and a transmissive semiconductor layer formed on the second conductivity type semiconductor layer. The transmissive semiconductor layer is pervious to light coming from the luminous layer. The second conductivity type semiconductor layer and the transmissive semiconductor layer have different carrier concentrations, and the carrier concentration of the second conductivity type semiconductor layer is higher than the carrier concentration of the transmissive semiconductor layer.
摘要翻译：半导体发光器件具有第一导电类型半导体层，形成在第一导电类型半导体层上的发光层，形成在发光层上的第二导电类型半导体层和形成在第二导电类型半导体上的透射半导体层层。透射半导体层可透过来自发光层的光。第二导电型半导体层和透射半导体层具有不同的载流子浓度，第二导电型半导体层的载流子浓度高于透射半导体层的载流子浓度。

7. 发明申请

US20070007543A1 Semiconductor light emitting device and manufacturing method therefor 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20070007543A1
公开(公告)日：2007-01-11
申请号：US11477654
申请日：2006-06-30
申请人： Eiji Kametani , Yukari Inoguchi , Nobuyuki Watanabe , Tetsuroh Murakami
发明人： Eiji Kametani , Yukari Inoguchi , Nobuyuki Watanabe , Tetsuroh Murakami
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/16 , H01L33/0079
摘要： A semiconductor light emitting device in the present invention is formed by laminating an epitaxial layer 30 including an AlGaInP active layer and a second wafer 23 which transmits light derived from the active layer. The crystal axes of the epitaxial layer 30 and the second wafer 23 are generally aligned with each other and are in the range of −15° to +15° with respect to a lateral face {100} of the second wafer 23. This semiconductor light emitting device, which is a joining type with high external emission efficiency, allows uniform wafer bonding to be achieved over the entire wafer face with ease and with a high yield without causing bonding failure and wafer cracks.
摘要翻译：本发明的半导体发光器件通过层叠包含AlGaInP有源层的外延层30和透射从有源层衍生的光的第二晶片23而形成。外延层30和第二晶片23的晶轴大致相互对准，并且相对于第二晶片23的侧面{100}在-15°至+ 15°的范围内。该半导体光作为具有高外部发光效率的接合型发光器件，可以容易且高产率地在整个晶片面上实现均匀的晶片接合，而不会引起接合故障和晶片裂纹。

8. 发明申请

US20060094140A1 Manufacturing method for semiconductor light emitting device 审中-公开
标题翻译：半导体发光元件的制造方法
公开(公告)号：US20060094140A1
公开(公告)日：2006-05-04
申请号：US11261557
申请日：2005-10-31
申请人： Yukari Inoguchi , Hiroshi Umeda , Takahisa Kurahashi , Nobuyuki Watanabe , Tetsuroh Murakami
发明人： Yukari Inoguchi , Hiroshi Umeda , Takahisa Kurahashi , Nobuyuki Watanabe , Tetsuroh Murakami
IPC分类号： H01L21/00 , H01L21/30
CPC分类号： H01L33/0079
摘要： A manufacturing method for a semiconductor light emitting device is provided. The method includes preparing a first wafer in which at least one semiconductor layer including the emitter layer is formed; disposing a second wafer transparent to an emission wavelength of the emitter layer on the surface of the first wafer; providing a bonding failure prevention structure to at least either the first wafer or the second wafer for preventing bonding failures of the first wafer and the second wafer; and applying compressive force to a contact face between the first wafer and the second wafer while at the same time, heating the contact face. The first and second wafers can be bonded across their entire surfaces without causing bonding failure.
摘要翻译：提供了一种用于半导体发光器件的制造方法。该方法包括制备其中形成包括发射极层的至少一个半导体层的第一晶片; 将第二晶片设置在第一晶片的表面上对发射层的发射波长透明; 为所述第一晶片或所述第二晶片中的至少任一个提供接合故障防止结构，以防止所述第一晶片和所述第二晶片的接合故障; 并且在同时对第一晶片和第二晶片之间的接触面施加压力，同时加热接触面。第一和第二晶片可以在其整个表面上结合，而不会引起接合故障。

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