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1. 发明授权

US5432661A Magnetoresistance effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US5432661A
公开(公告)日：1995-07-11
申请号：US191200
申请日：1994-02-03
申请人： Teruya Shinjo , Yasuhiro Kawawake , Toshio Takada, deceased
发明人： Teruya Shinjo , Yasuhiro Kawawake , Toshio Takada, deceased
IPC分类号： G01R33/09 , G11B5/39 , H01F10/14 , H01F10/16 , H01F10/32 , H01L43/08 , G11B5/127
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , H01L43/08
摘要： A magnetoresistance effect element is provided which comprises a substrate on which a first magnetic layer having a thickness of 0.2 to 5 nm which contains cobalt, a second magnetic layer having a thickness of not larger than 5 nm which contains iron or nickel or an alloy thereof, a third magnetic layer having a thickness of 0.2 to 5 nm which contains cobalt and a nonmagnetic layer having a thickness of 0.5 to 5 nm are laminated in this order at least twice, wherein the thickness of the second magnetic layer is not larger than half of the total thickness of the first and third magnetic layers. The element is useful as a magnetoresistance sensor or head.
摘要翻译：提供了一种磁电阻效应元件，其包括其上含有钴的厚度为0.2至5nm的第一磁性层，含有铁或镍的厚度不大于5nm的第二磁性层或其合金的衬底含有钴的厚度为0.2〜5nm的第三磁性层和厚度为0.5〜5nm的非磁性层的厚度依次层叠至少两次，其中第二磁性层的厚度不大于一半的第一和第三磁性层的总厚度。该元件可用作磁阻传感器或磁头。

2. 发明授权

US4108787A Process for producing ferromagnetic iron oxide 失效
标题翻译：制备铁磁性氧化铁的方法
公开(公告)号：US4108787A
公开(公告)日：1978-08-22
申请号：US642826
申请日：1975-12-22
申请人： Kouichi Masaki , Teruya Shinjo , Yasuo Tamai , Tatsuji Kitamoto
发明人： Kouichi Masaki , Teruya Shinjo , Yasuo Tamai , Tatsuji Kitamoto
IPC分类号： C01G49/06 , G11B5/706
CPC分类号： C01G49/06 , G11B5/70652 , G11B5/70657 , G11B5/70673 , G11B5/70694 , C01P2002/52 , C01P2002/80 , C01P2004/10 , C01P2004/62 , C01P2006/42
摘要： In ferromagnetic powders mainly composed of iron oxide, the ferromagnetic iron oxide(s) comprise a superparamagnetic material which provides a peak showing superparamagnetism by measurement of the Mossbauer Effect spectrum. The ferromagnetic iron oxides are suitable for making highly sensitive magnetic recording media having excellent frequency response with lowered modulation noise.
摘要翻译：在主要由铁氧化物组成的铁磁粉末中，铁磁性氧化铁包括超顺磁性材料，其通过测量莫斯鲍效应光谱提供了显示超顺磁性的峰。铁磁铁氧化物适用于制造具有优异频率响应且调制噪声降低的高灵敏度磁记录介质。

3. 发明授权

US5783284A Magnetic multilayer film, magnetoresistance element, and method for preparing magnetoresistance element 失效
公开(公告)号：US5783284A
公开(公告)日：1998-07-21
申请号：US594486
申请日：1996-01-31
申请人： Teruya Shinjo , Satoru Araki
发明人： Teruya Shinjo , Satoru Araki
IPC分类号： G01R33/09 , G11B5/39 , H01F10/32 , H01F41/30 , H01F41/34 , H01L43/08 , G11B5/127 , B32B3/00
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , H01F10/324 , H01F41/302 , H01F41/34 , H01L43/08 , G11B2005/3996 , G11B5/398 , Y10S428/90 , Y10T428/1121 , Y10T428/12465 , Y10T428/24355 , Y10T428/24405 , Y10T428/24413 , Y10T428/24537 , Y10T428/24545 , Y10T428/2457
摘要： In a magnetoresistance multilayer film comprising at least two magnetic layers on a substrate, with a nonmagnetic layer intervening between the magnetic layers, each interface between the magnetic layer and the nonmagnetic layer is corrugated in both X and Y directions of a substrate major surface. The corrugations of the interface are formed by providing the substrate surface with a multiplicity of asperities distributed in both X and Y directions and depositing magnetic layers and nonmagnetic layers thereon. The film shows a linear rise of MR change in an applied magnetic field within a very low range of 0 to about 40 Oe.

4. 发明授权

US5315282A Magnetoresistance effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US5315282A
公开(公告)日：1994-05-24
申请号：US820866
申请日：1992-01-21
申请人： Teruya Shinjo , Hidefumi Yamamoto , Toshio Takada
发明人： Teruya Shinjo , Hidefumi Yamamoto , Toshio Takada
IPC分类号： H01L43/08 , G11B5/39 , H01L43/10
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01L43/08 , G11B2005/3996
摘要： A magnetoresistance effect element including a substrate and at least two magnetic thin layers which are laminated with interposing a non-magnetic thin layer therebetween on said substrate, wherein adjacent magnetic thin layers through the non-magnetic thin layer have different coercive forces and each of the magnetic thin layers and the non-magnetic layer has a thickness of not larger than 200 .ANG., which has a large magnetoresistance ratio of several % to several ten % at a small external magnetic field of several Oe to several ten Oe and can provide a MR sensor having a high sensitivity and a MR head which achieves high density magnetic recording.
摘要翻译： PCT No.PCT / JP91 / 00671 Sec。 371日期：1992年1月21日 102（e）日期1992年1月21日PCT 1991年5月20日PCT PCT。公开号WO91 / 18424 日本1991年11月28日。一种磁阻效应元件，包括基板和至少两个磁性薄层，所述至少两个磁性薄层层叠在所述基板之间，其间具有非磁性薄层，其中通过非磁性薄层的相邻磁性薄层具有不同的矫顽力和磁性薄层和非磁性层中的每一个具有不大于200的厚度，其在几个Oe到几个的小的外部磁场下具有几％至几十％的大的磁阻比十Oe，并且可以提供具有高灵敏度的MR传感器和实现高密度磁记录的MR头。

5. 发明授权

US5001018A Fe-Co base magnetic film and process for producing the same 失效
标题翻译： Fe-Co基磁性膜及其制造方法
公开(公告)号：US5001018A
公开(公告)日：1991-03-19
申请号：US414383
申请日：1989-09-29
申请人： Toshio Takada , Tetsuo Okuyama , Kenichi Yoden , Teruya Shinjo
发明人： Toshio Takada , Tetsuo Okuyama , Kenichi Yoden , Teruya Shinjo
IPC分类号： C30B29/52 , C22C30/00 , C22C38/00 , C23C14/14 , C30B29/68 , G11B5/31 , H01F10/16 , H01F10/32 , H01F41/20
CPC分类号： B82Y25/00 , G11B5/31 , H01F10/32 , Y10S428/928 , Y10T428/12465 , Y10T428/12931 , Y10T428/12937 , Y10T428/12951
摘要： An Fe-Co base magnetic material comprising periodically laminated structure which consists of an Fe layer which has the bcc (110) plane in the lamination plane, an Fe-Co alloy layer which has the bcc (110) plane in the lamination plane and is laminated on said Fe layer and a Co layer which has the hcp (101) plane in the lamination plane and is laminated on said Fe-Co alloy layer, which laminated structure has controlled magnetostriction.
摘要翻译：一种Fe-Co基磁性材料，包括由在层叠平面中具有bcc（110）面的Fe层构成的周期性层叠结构，在层叠平面中具有bcc（110）面的Fe-Co合金层，层叠在所述Fe层上，并且在层叠平面中具有hcp（101）面的Co层，层叠在所述Fe-Co合金层上，该层叠结构具有受控的磁致伸缩。

6. 发明授权

US6004654A Magnetic multilayer film, magnetoresistance element, and method for preparing magnetoresistance element 失效
标题翻译：磁性多层膜，磁阻元件及制备磁阻元件的方法
公开(公告)号：US6004654A
公开(公告)日：1999-12-21
申请号：US027187
申请日：1998-02-20
申请人： Teruya Shinjo , Satoru Araki
发明人： Teruya Shinjo , Satoru Araki
IPC分类号： G01R33/09 , G11B5/39 , H01F10/32 , H01F41/30 , H01F41/34 , B32B3/00 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , H01F10/324 , H01F41/302 , H01F41/34 , G11B2005/3996 , Y10S428/90 , Y10T428/1121 , Y10T428/12465 , Y10T428/24355 , Y10T428/24405 , Y10T428/24413 , Y10T428/24521 , Y10T428/24537 , Y10T428/24545 , Y10T428/2457
摘要： In a magnetoresistance multilayer film comprising at least two magnetic layers on a substrate, with a nonmagnetic layer intervening between the magnetic layers, each interface between the magnetic layer and the nonmagnetic layer is corrugated in both X and Y directions of a substrate major surface. The corrugations of the interface are formed by providing the substrate surface with a multiplicity of asperities distributed in both X and Y directions and depositing magnetic layers and nonmagnetic layers thereon. The film shows a linear rise of MR change in an applied magnetic field within a very low range of 0 to about 40 Oe.
摘要翻译：在基片上包含至少两层磁性层的磁阻多层膜中，介于磁性层之间的非磁性层，磁性层和非磁性层之间的每个界面在衬底主表面的X和Y方向都是波纹状的。界面的波纹通过为基板表面提供分布在X和Y方向上的多个凹凸而在其上沉积磁性层和非磁性层而形成。该膜显示在0至约40Oe的非常低的范围内的施加磁场中MR变化的线性上升。

7. 发明授权

US5514469A Magnetoresistance effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US5514469A
公开(公告)日：1996-05-07
申请号：US373462
申请日：1995-01-17
申请人： Teruya Shinjo , Hidefumi Yamamoto , Toshihiko Anno , Toshio Takada
发明人： Teruya Shinjo , Hidefumi Yamamoto , Toshihiko Anno , Toshio Takada
IPC分类号： H01L43/08 , H01L43/10 , G11B5/66 , B32B5/16 , B32B15/00
CPC分类号： H01L43/10 , Y10S428/90 , Y10T428/1129 , Y10T428/12465 , Y10T428/12847 , Y10T428/12854 , Y10T428/265
摘要： A magnetoresistance effect element having a substrate, a buffer layer of a metal selected from the group consisting of chromium, tungsten, titanium, vanadium, manganese and their alloys which is formed on the substrate, and at least two magnetic thin layers which are laminated with interposing a non-magnetic thin layer therebetween on the metal thin layer, wherein adjacent magnetic thin layers through the non-magnetic thin layer have different coercive forces. This magnetoresistance effect element has an increased magnetoresistance ratio.
摘要翻译：一种磁电阻效应元件，具有基板，选自铬，钨，钛，钒，锰及其合金的金属缓冲层，其形成在基板上，以及至少两个磁性薄层，其与在金属薄层之间插入非磁性薄层，其中通过非磁性薄层的相邻磁性薄层具有不同的矫顽力。该磁阻效应元件具有增加的磁阻比。

8. 发明授权

US5462795A Magnetoresistance effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US5462795A
公开(公告)日：1995-10-31
申请号：US992500
申请日：1992-12-17
申请人： Teruya Shinjo , Hidefumi Yamamoto , Toshihiko Anno , Toshio Takada
发明人： Teruya Shinjo , Hidefumi Yamamoto , Toshihiko Anno , Toshio Takada
IPC分类号： H01L43/08 , G01R33/09 , G11B5/39 , H01F10/16 , H01L43/10 , B32B5/16 , G11B5/66
CPC分类号： H01L43/10 , Y10S428/90 , Y10T428/1121 , Y10T428/12465 , Y10T428/12903 , Y10T428/1291 , Y10T428/12917 , Y10T428/12931 , Y10T428/265
摘要： There is provided a magnetoresistance effect element comprising a substrate and at least two magnetic thin layers which are laminated with interposing a non-magnetic thin layer therebetween on said substrate, wherein adjacent magnetic thin layers through the non-magnetic thin layer have different coercive forces, characterized in that a metal thin film is provided in an interface between at least one of the magnetic layers and the non-magnetic layer which is adjacent thereto, and the metal thin film is made of a substance which is different from that of the adjacent non-magnetic layer.
摘要翻译：提供了一种磁电阻效应元件，其包括基板和至少两个磁性薄层，所述至少两个磁性薄层在所述基板上层叠有非磁性薄层，其中通过非磁性薄层的相邻磁性薄层具有不同的矫顽力，其特征在于，在所述磁性层和与其相邻的所述非磁性层中的至少一个之间的界面处设置金属薄膜，并且所述金属薄膜由与相邻非磁性层不同的物质制成，磁层。

9. 发明授权

US5243316A Magnetoresistance effect element 失效
标题翻译：磁阻效应元素
公开(公告)号：US5243316A
公开(公告)日：1993-09-07
申请号：US824005
申请日：1992-01-22
申请人： Hiroshi Sakakima , Mitsuo Satomi , Toshio Takada , Teruya Shinjo
发明人： Hiroshi Sakakima , Mitsuo Satomi , Toshio Takada , Teruya Shinjo
IPC分类号： G01D5/14 , G01D5/16 , G01R33/09 , G11B5/39 , H01C10/00 , H01F10/00 , H01F10/08 , H01F10/32 , H01L43/10
CPC分类号： G01D5/142 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , H01F10/32 , H01F10/3281 , H01L43/10 , G11B2005/3996 , Y10S428/926 , Y10S428/928 , Y10T428/12465 , Y10T428/12931 , Y10T428/12944
摘要： There is provided a magnetoresistance effect element which is a multilayer structure body wherein a first magnetic film layer made of Ni-rich Ni-Co-Fe having a thickness of 10 to 100 .ANG. and a second magnetic film layer made of Co-rich Co-Ni-Fe having a thickness of 10 to 100 .ANG., which are different from each other in coercive force, are integrally laminated with a non-magnetic metal film layer having a thickness of 10 to 100 .ANG. interposed therebetween. The non-magnetic metal film layer is of a metal, for example, Cu, Ag, Au, Pt, Ru or Re. (Ni.sub.A Co.sub.1-A).sub.B Fe.sub.1-B, Ni.sub.A Fe.sub.1-A or Ni.sub.A Co.sub.1-A is used as a material of the first magnetic film, and (Co.sub.C Ni.sub.1-C).sub.D Fe.sub.1-D is used as a material of the second magnetic film.

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