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1. 发明授权

US09019505B2 Temperature control system including sub-chiller 有权
标题翻译：温控系统包括冷水机组
公开(公告)号：US09019505B2
公开(公告)日：2015-04-28
申请号：US13240274
申请日：2011-09-22
申请人： Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo , Kenji Nagai
发明人： Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo , Kenji Nagai
IPC分类号： G01B9/02 , H01L21/67 , G01J5/58 , G01J9/02
CPC分类号： H01L21/67248 , G01J9/02 , G01J2005/583
摘要： The temperature control system includes: a susceptor which allows an object to be processed to be held on a top surface thereof and includes a flow path, through which a temperature adjusting medium flows, formed therein; a temperature measuring unit which measures a temperature of the object to be processed held on the top surface of the susceptor; a first temperature adjusting unit which adjusts a temperature of the temperature adjusting medium flowing through the flow path; and a second temperature adjusting unit which is disposed between the susceptor and the first temperature adjusting unit, and adjusts a temperature of the temperature adjusting medium based on a result of the measurement of the temperature measuring unit.
摘要翻译：温度控制系统包括：一个允许被处理物体被保持在其顶面上的基座，并且包括在其中形成温度调节介质流过的流路; 温度测量单元，其测量保持在所述基座的顶表面上的被处理物体的温度; 第一温度调节单元，其调节流过所述流路的温度调节介质的温度; 以及第二温度调节单元，其设置在所述基座和所述第一温度调节单元之间，并且基于所述温度测量单元的测量结果来调节所述温度调节介质的温度。

2. 发明授权

US08585284B2 Temperature measurement apparatus and method 有权
标题翻译：温度测量装置及方法
公开(公告)号：US08585284B2
公开(公告)日：2013-11-19
申请号：US13428870
申请日：2012-03-23
申请人： Jun Abe , Tatsuo Matsudo , Chishio Koshimizu
发明人： Jun Abe , Tatsuo Matsudo , Chishio Koshimizu
IPC分类号： G01J5/00 , G01B9/02
CPC分类号： G01K11/00 , G01K11/125
摘要： A temperature measurement apparatus includes a light source; a first splitter that splits a light beam into a measurement beam and a reference beam; a reference beam reflector that reflects the reference beam; an optical path length adjustor; a second splitter that splits the reflected reference beam into a first reflected reference beam and a second reflected reference beam; a first photodetector that measures an interference between the first reflected reference beam and a reflected measurement beam obtained by the measurement beam reflected from a target object; a second photodetector that measures an intensity of the second reflected reference beam; and a temperature calculation unit. The temperature calculation unit calculates a location of the interference by subtracting an output signal of the second photodetector from an output signal of the first photodetector, and calculates a temperature of the target object from the calculated location of the interference.
摘要翻译：温度测量装置包括光源; 第一分离器，其将光束分成测量光束和参考光束; 反射参考光束的参考光束反射器; 光路长度调节器; 第二分离器，其将反射的参考光束分成第一反射参考光束和第二反射参考光束; 测量第一反射参考光束与由目标物体反射的测量光束获得的反射测量光束之间的干涉的第一光电检测器; 第二光电检测器，其测量第二反射参考光束的强度; 和温度计算单元。温度计算单元通过从第一光电检测器的输出信号减去第二光电检测器的输出信号来计算干扰的位置，并根据所计算的干扰位置计算目标对象的温度。

3. 发明授权

US08425791B2 In-chamber member temperature control method, in-chamber member, substrate mounting table and plasma processing apparatus including same 有权
标题翻译：室内部件温度控制方法，室内部件，基板安装台和包括其的等离子体处理装置
公开(公告)号：US08425791B2
公开(公告)日：2013-04-23
申请号：US12498703
申请日：2009-07-07
申请人： Chishio Koshimizu , Manabu Iwata , Tatsuo Matsudo
发明人： Chishio Koshimizu , Manabu Iwata , Tatsuo Matsudo
IPC分类号： G01L21/30 , G01R31/00
CPC分类号： H01J37/32642 , H01J37/32522 , H01J37/32623
摘要： In a method of controlling the temperature of an in-chamber member used in a plasma processing apparatus that processes a target substrate with plasma, a plurality of power-feeding portions is provided in the in-chamber member and the in-chamber member is heated by supplying electric power thereto through the power-feeding portions. A resistance value or resistivity of the in-chamber member is measured and the electric power is controlled based on the temperature of the in-chamber member estimated from the resistance value or resistivity. The in-chamber member includes one or more annular members arranged around the target substrate. The in-chamber member is a member making contact with plasma within a chamber and existing near the target substrate.
摘要翻译：在等离子体处理对象基板的等离子体处理装置中使用的室内部件的温度控制方法中，在室内部件中设置有多个供电部，加热室内部件通过供电部向其供电。测量室内构件的电阻值或电阻率，并且基于根据电阻值或电阻率估计的室内构件的温度来控制电功率。腔内构件包括围绕靶基底布置的一个或多个环形构件。腔内构件是与腔室内的等离子体接触并存在于靶基底附近的构件。

4. 发明申请

US20120251759A1 COMPONENT IN PROCESSING CHAMBER OF SUBSTRATE PROCESSING APPARATUS AND METHOD OF MEASURING TEMPERATURE OF THE COMPONENT 有权
标题翻译：基板处理装置的加工室中的部件和测量部件温度的方法
公开(公告)号：US20120251759A1
公开(公告)日：2012-10-04
申请号：US13432617
申请日：2012-03-28
申请人： Jun YAMAWAKU , Chishio KOSHIMIZU , Tatsuo MATSUDO
发明人： Jun YAMAWAKU , Chishio KOSHIMIZU , Tatsuo MATSUDO
IPC分类号： B32B3/14 , G01K11/00 , B32B18/00 , B05C11/00 , B32B33/00
CPC分类号： G01K11/14 , G01K5/48 , H01L21/67248
摘要： A component in a processing chamber of a substrate processing apparatus, where a temperature may be accurately measured by using a temperature measuring apparatus using an interference of a low-coherence light, even when a front surface and a rear surface are not parallel due to abrasion, or the like. A focus ring used in a vacuum atmosphere and of which a temperature is measured includes an abrasive surface exposed to an abrasive atmosphere according to plasma, a nonabrasive surface not exposed to the abrasive atmosphere, a thin-walled portion including a top surface and a bottom surface that are parallel to each other, and a coating member coating the top surface of the thin-walled portion, wherein a mirror-like finishing is performed on each of the top and bottom surfaces of the thin-walled portion.
摘要翻译：在基板处理装置的处理室中的部件，其中即使当前表面和后表面由于磨损而不平行时，也可以通过使用具有低相干光干涉的温度测量装置来精确地测量温度，等等。在真空气氛中使用并且测量温度的聚焦环包括暴露于等离子体的研磨气氛的研磨表面，未暴露于研磨性气氛的非磨损表面，包括顶表面和底部的薄壁部分表面彼此平行;以及涂覆部件，其涂覆在薄壁部分的顶表面上，其中在薄壁部分的每个顶表面和底表面上执行镜像整理。

5. 发明申请

US20120243573A1 PLASMA PROCESSING APPARATUS AND TEMPERATURE MEASURING METHOD 有权
标题翻译：等离子体加工装置和温度测量方法
公开(公告)号：US20120243573A1
公开(公告)日：2012-09-27
申请号：US13428207
申请日：2012-03-23
申请人： Tatsuo MATSUDO
发明人： Tatsuo MATSUDO
IPC分类号： G01K11/32 , C23C16/50 , H01L21/3065
CPC分类号： G01K5/48 , G01K11/125
摘要： A plasma processing apparatus and a temperature measuring method that may measure a temperature of an object in a processing chamber by a low-coherence interferometer without forming a hole in a holding stage or an upper electrode of the plasma processing apparatus, thereby performing a plasma process of a substrate with high precision and uniformity.The plasma processing apparatus is implemented by disposing a light source collimator outside of a light source window, disposing a light-receiving collimator outside of a light-receiving window, allowing a measurement light emitted from the light source collimator to pass through the light source window to be obliquely emitted to a surface of the object to be measured, and allowing the reflected measurement light to pass through the light-receiving window to be incident on the light-receiving collimator. The temperature of the object in the processing chamber may be measured by the low-coherence interferometer.
摘要翻译：一种等离子体处理装置和温度测量方法，其可以通过低相干干涉仪测量处理室中的物体的温度，而不在等离子体处理装置的保持阶段或上电极中形成孔，从而进行等离子体处理的基板，具有高精度和均匀性。等离子体处理装置通过在光源窗口外部设置光源准直器，将光接收准直仪配置在受光窗口外部，使从光源准直仪发出的测量光通过光源窗口倾斜地发射到待测量物体的表面，并且允许反射的测量光通过受光窗口以入射到受光准直仪。处理室中的物体的温度可以由低相干干涉仪来测量。

6. 发明申请

US20120224603A1 TEMPERATURE MEASURING APPARATUS AND TEMPERATURE MEASURING METHOD 有权
标题翻译：温度测量装置和温度测量方法
公开(公告)号：US20120224603A1
公开(公告)日：2012-09-06
申请号：US13476264
申请日：2012-05-21
申请人： Jun ABE , Tatsuo Matsudo , Chishio Koshimizu
发明人： Jun ABE , Tatsuo Matsudo , Chishio Koshimizu
IPC分类号： G01J5/02
CPC分类号： G01J5/02 , G01K1/026 , G01K11/125
摘要： A temperature measuring apparatus includes a light source, a first splitter, a second splitter, a reference beam reflector, an optical path length adjuster, a reference beam transmitting member, a first to an nth measuring beam transmitting member and a photodetector. The temperature measuring apparatus further includes an attenuator that attenuates the reference beam reflected from the reference beam reflector to thereby make an intensity thereof closer to an intensity of the measurement beam reflected from the temperature measurement object.
摘要翻译：温度测量装置包括光源，第一分离器，第二分离器，参考光束反射器，光程长度调节器，参考光束传输部件，第一至第N测量光束传输部件和光电检测器。温度测量装置还包括衰减器，衰减从参考光束反射器反射的参考光束，从而使其强度更接近于从温度测量对象反射的测量光束的强度。

7. 发明申请

US20120037315A1 CAPACITIVE COUPLING PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：电容耦合等离子体加工设备
公开(公告)号：US20120037315A1
公开(公告)日：2012-02-16
申请号：US13278228
申请日：2011-10-21
申请人： Shinji HIMORI , Tatsuo Matsudo
发明人： Shinji HIMORI , Tatsuo Matsudo
IPC分类号： C23F1/08
CPC分类号： H01J37/32082 , H01J37/32091 , H01J37/32532 , H01J37/32568
摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. The second electrode includes a plurality of conductive segments separated from each other and facing the first electrode. An RF power supply is configured to apply an RF power to the first electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma by the RF electric field. A DC power supply is configured to apply a DC voltage to at least one of the segments of the second electrode.
摘要翻译：电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。在腔室中，第一电极和第二电极相对设置。第二电极包括彼此分离并面向第一电极的多个导电段。 RF电源被配置为向第一电极施加RF功率以在第一和第二电极之间的等离子体产生区域内形成RF电场，以便通过RF电场将处理气体转化成等离子体。 DC电源被配置为向第二电极的至少一个段施加DC电压。

8. 发明申请

US20110222581A1 PROBE FOR TEMPERATURE MEASUREMENT, TEMPERATURE MEASURING SYSTEM AND TEMPERATURE MEASURING METHOD USING THE SAME 有权
标题翻译：温度测量探头，温度测量系统和温度测量方法
公开(公告)号：US20110222581A1
公开(公告)日：2011-09-15
申请号：US13044705
申请日：2011-03-10
申请人： Tatsuo Matsudo
发明人： Tatsuo Matsudo
IPC分类号： G01K11/00
CPC分类号： G01K11/00
摘要： A probe for temperature measurement uses interference of a low-coherence light beam. The probe includes a temperature acquiring member configured to be brought into contact with a surface of a temperature measurement target and thermally assimilate with the temperature measurement target; a light irradiating/receiving unit configured to irradiate a measurement light beam as a low-coherence light beam to the temperature acquiring member and receive reflected light beams from a front surface and a rear surface of the temperature acquiring member; and a housing configured to define a distance between the temperature acquiring member and the light irradiating/receiving unit to a preset length and isolate optical paths of the measurement light beam and the two reflected light beams from an atmosphere in which the temperature measurement target is placed.
摘要翻译：用于温度测量的探头使用低相干光束的干涉。探头包括温度获取部件，其构造成与温度测量对象的表面接触并与温度测量目标热同化; 光照射/接收单元，被配置为将测量光束作为低相干光束照射到温度获取部件，并接收来自温度获取部件的前表面和后表面的反射光束; 以及壳体，其被构造成将所述温度获取构件和所述光照射/接收单元之间的距离限定到预定长度，并且隔离所述测量光束的光路和来自放置所述温度测量对象的气氛的所述两个反射光束。

9. 发明申请

US20090047795A1 PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND STORAGE MEDIUM 审中-公开
标题翻译：等离子体加工设备，等离子体处理方法和储存介质
公开(公告)号：US20090047795A1
公开(公告)日：2009-02-19
申请号：US12192388
申请日：2008-08-15
申请人： Tatsuo MATSUDO , Shinji Himori , Noriaki Imai , Takeshi Ohse , Jun Abe , Takayuki Katsunuma
发明人： Tatsuo MATSUDO , Shinji Himori , Noriaki Imai , Takeshi Ohse , Jun Abe , Takayuki Katsunuma
IPC分类号： H01L21/306 , H01L21/3065 , H01L21/31
CPC分类号： H01L21/3065 , H01J37/32091 , H01J37/32146 , H01J37/32165
摘要： A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals.
摘要翻译：一种等离子体处理装置包括：第一射频（RF）电源单元，用于将第一和第二电极中的至少一个施加于处理气体中产生等离子体，所述第一和第二电极在排气处理中相互面对地设置; 房间。所述第一RF电源单元由控制单元控制，使得所述第一RF功率具有用于产生等离子体的第一幅度的第一相位和所述第一RF功率具有第二幅度以用于基本上不产生等离子体的第二相位以预定间隔交替重复。

10. 发明申请

US20080304543A1 TEMPERATURE MEASURING APPARATUS AND TEMPERATURE MEASURING METHOD 有权
标题翻译：温度测量装置和温度测量方法
公开(公告)号：US20080304543A1
公开(公告)日：2008-12-11
申请号：US12043654
申请日：2008-03-06
申请人： Jun Abe , Tatsuo Matsudo , Chishio Koshimizu
发明人： Jun Abe , Tatsuo Matsudo , Chishio Koshimizu
IPC分类号： G01K1/02
CPC分类号： G01J5/02 , G01K1/026 , G01K11/125
摘要： A temperature measuring apparatus includes a light source, a first splitter, a second splitter, a reference beam reflector, an optical path length adjuster, a reference beam transmitting member, a first to an nth measuring beam transmitting member and a photodetector. The temperature measuring apparatus further includes an attenuator that attenuates the reference beam reflected from the reference beam reflector to thereby make an intensity thereof closer to an intensity of the measurement beam reflected from the temperature measurement object.
摘要翻译：温度测量装置包括光源，第一分离器，第二分离器，参考光束反射器，光程长度调节器，参考光束传输部件，第一至第N测量光束传输部件和光电检测器。温度测量装置还包括衰减器，衰减从参考光束反射器反射的参考光束，从而使其强度更接近于从温度测量对象反射的测量光束的强度。

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