专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120037315A1 CAPACITIVE COUPLING PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：电容耦合等离子体加工设备
公开(公告)号：US20120037315A1
公开(公告)日：2012-02-16
申请号：US13278228
申请日：2011-10-21
申请人： Shinji HIMORI , Tatsuo Matsudo
发明人： Shinji HIMORI , Tatsuo Matsudo
IPC分类号： C23F1/08
CPC分类号： H01J37/32082 , H01J37/32091 , H01J37/32532 , H01J37/32568
摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. The second electrode includes a plurality of conductive segments separated from each other and facing the first electrode. An RF power supply is configured to apply an RF power to the first electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma by the RF electric field. A DC power supply is configured to apply a DC voltage to at least one of the segments of the second electrode.
摘要翻译：电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。在腔室中，第一电极和第二电极相对设置。第二电极包括彼此分离并面向第一电极的多个导电段。 RF电源被配置为向第一电极施加RF功率以在第一和第二电极之间的等离子体产生区域内形成RF电场，以便通过RF电场将处理气体转化成等离子体。 DC电源被配置为向第二电极的至少一个段施加DC电压。

2. 发明申请

US20080062611A1 ELECTROSTATIC CHUCK DEVICE 有权
标题翻译：静电切割装置
公开(公告)号：US20080062611A1
公开(公告)日：2008-03-13
申请号：US11835743
申请日：2007-08-08
申请人： Shinji HIMORI , Shoichiro MATSUYAMA , Atsushi MATSUURA , Hiroshi INAZUMACHI , Mamoru KOSAKAI , Yukio MIURA , Keigo MAKI
发明人： Shinji HIMORI , Shoichiro MATSUYAMA , Atsushi MATSUURA , Hiroshi INAZUMACHI , Mamoru KOSAKAI , Yukio MIURA , Keigo MAKI
IPC分类号： H01L21/683
CPC分类号： H01L21/6833
摘要： An electrostatic chuck device includes an electrostatic chuck section, a metal base section, and a dielectric plate. The electrostatic chuck section has a substrate, a main surface of which serves as a mounting surface for a plate-like sample, an electrostatic-adsorption inner electrode built in the substrate, and a power supply terminal for applying a DC voltage to the electrostatic-adsorption inner electrode. Here, a dielectric plate is fixed to a concave portion formed in the metal base section. The dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric plate and the concave portion are adhesively bonded to each other with a conductive adhesive bonding layer interposed therebetween, the volume resistivity of which is 1.0×10−2Ωcm or less.
摘要翻译：静电吸盘装置包括静电吸盘部，金属基部和电介质板。静电吸盘部具有基板，其主面作为板状试样的安装面，内置于基板的静电吸附内部电极，以及向静电吸引部施加直流电压的电源端子，吸附内电极。这里，电介质板被固定到形成在金属基部中的凹部。电介质板和静电卡盘部分之间插入绝缘粘合剂粘合层彼此粘合。电介质板和凹部通过导电性粘合剂层彼此粘合，体积电阻率为1.0×10 -2Ω·cm以下。

3. 发明申请

US20110162802A1 PLASMA PROCESSING APPARATUS, ELECTRODE PLATE FOR PLASMA PROCESSING APPARATUS, AND ELECTRODE PLATE MANUFACTURING METHOD 审中-公开
标题翻译：等离子体处理装置，等离子体处理装置的电极板和电极板的制造方法
公开(公告)号：US20110162802A1
公开(公告)日：2011-07-07
申请号：US13049462
申请日：2011-03-16
申请人： Katsuya OKUMURA , Shinji HIMORI , Kazuya NAGASEKI , Hiroki MATSUMARU , Shoichiro MATSUYAMA , Toshiki TAKAHASHI
发明人： Katsuya OKUMURA , Shinji HIMORI , Kazuya NAGASEKI , Hiroki MATSUMARU , Shoichiro MATSUYAMA , Toshiki TAKAHASHI
IPC分类号： H01L21/00 , C23F1/08 , H05H1/24 , C23C16/509 , C23C16/458 , C23C16/455
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32082 , H01J37/32541
摘要： A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.
摘要翻译：用于在目标衬底上执行等离子体处理的等离子体处理装置包括：配置成容纳目标衬底并减少其中的压力的处理容器。第一电极设置在处理容器内。供应系统被配置为将处理气体供应到处理容器中。电场形成系统被配置为在处理容器内形成RF电场，以产生处理气体的等离子体。多个突起离散地设置在第一电极的主表面上，朝向产生等离子体的空间突出。

4. 发明申请

US20100071850A1 MOUNTING TABLE AND PLASMA PROCESSING APPARATUS 有权
标题翻译：安装台和等离子体加工设备
公开(公告)号：US20100071850A1
公开(公告)日：2010-03-25
申请号：US12560924
申请日：2009-09-16
申请人： Shinji HIMORI , Yasuharu Sasaki
发明人： Shinji HIMORI , Yasuharu Sasaki
IPC分类号： H01L21/465
CPC分类号： H01L21/6833 , H01J37/32091
摘要： A mounting table for use in a plasma processing apparatus, on which a substrate is mounted, includes: a conductive member connected to a high frequency power supply and a high frequency power supply; a dielectric layer embedded in a central portion on an upper surface of the conductive member; and an electrostatic chuck mounted on the dielectric layer. Further, the electrostatic chuck is connected to a high voltage DC power supply and includes an electrode film satisfying following conditions: δ/z≧85 (where δ=(ρv/(μπf))1/2) and, a surface resistivity of the substrate>a surface resistivity of a central portion of the electrode film.
摘要翻译：一种用于安装有基板的等离子体处理装置的安装台，包括：连接到高频电源和高频电源的导电构件; 介电层，其嵌入在所述导电部件的上表面的中央部; 以及安装在电介质层上的静电卡盘。此外，静电卡盘连接到高压直流电源，并且包括满足以下条件的电极膜：δ/z≥85（其中δ=（＆rgr; v /（μ＆pgr; f））1/2），并且基板的表面电阻率>电极膜的中心部分的表面电阻率。

5. 发明申请

US20080062610A1 ELECTROSTATIC CHUCK DEVICE 审中-公开
标题翻译：静电切割装置
公开(公告)号：US20080062610A1
公开(公告)日：2008-03-13
申请号：US11835560
申请日：2007-08-08
申请人： Shinji HIMORI , Shoichiro MATSUYAMA , Atsushi MATSUURA , Hiroshi INAZUMACHI , Mamoru KOSAKAI , Yukio MIURA , Keigo MAKI
发明人： Shinji HIMORI , Shoichiro MATSUYAMA , Atsushi MATSUURA , Hiroshi INAZUMACHI , Mamoru KOSAKAI , Yukio MIURA , Keigo MAKI
IPC分类号： H01L21/683
CPC分类号： H01L21/6833
摘要： An electrostatic chuck device includes: an electrostatic chuck section including a substrate, which has a main surface serving as a mounting surface on which a plate-like sample is mounted and an electrostatic-adsorption inner electrode built therein, and a power supply terminal for applying a DC voltage to the electrostatic-adsorption inner electrode; and a metal base section that is fixed to the other main surface of the electrostatic chuck section so as to be incorporated into a body and that serves as a high frequency generating electrode. Here, the volume resistivity of the electrostatic-adsorption inner electrode is in the range of 1.0×10−1Ωcm to 1.0×108 Ωcm.
摘要翻译：静电吸盘装置包括：静电吸盘部，其具有基板，其具有作为安装有板状试样的安装面的主面和内置有静电吸附内部电极的基板，以及用于施加电力的端子到静电吸附内部电极的DC电压; 以及固定在静电卡盘部的另一个主面上的金属基部，以结合到主体中并作为高频发生电极。这里，静电吸附内部电极的体积电阻率在1.0×10 -1Ω〜1.0×10 8Ωm的范围内。

6. 发明申请

US20110155322A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20110155322A1
公开(公告)日：2011-06-30
申请号：US12979875
申请日：2010-12-28
申请人： Shinji HIMORI , Daisuke Hayashi , Akitaka Shimizu
发明人： Shinji HIMORI , Daisuke Hayashi , Akitaka Shimizu
IPC分类号： C23F1/08
CPC分类号： H01L21/67069 , H01J37/32091 , H01J37/32541 , H01J37/3255 , H01J37/32577 , H01J37/32605
摘要： A plasma processing apparatus includes a processing chamber in which a target substrate is processed; an application electrode and a facing electrode provided to face each other in the processing chamber, a plasma generation space being formed between the application electrode and the facing electrode; and an RF power supply connected to the application electrode, an RF power being supplied from the RF power supply to the application electrode. At least one of the application electrode and the facing electrode includes a base formed of a metal, and a dielectric body inserted into the base, one or more metal plate electrodes being buried in the dielectric body.
摘要翻译：等离子体处理装置包括：处理室，其中处理目标基板; 在处理室中设置成面对的施加电极和对置电极，在施加电极和对置电极之间形成等离子体产生空间; 以及连接到施加电极的RF电源，RF电力从RF电源提供给施加电极。施加电极和对置电极中的至少一个包括由金属形成的基底和插入到基底中的电介质体，一个或多个金属板电极被埋在电介质体内。

7. 发明申请

US20080037195A1 ELECTROSTATIC CHUCK 有权
标题翻译：静电卡
公开(公告)号：US20080037195A1
公开(公告)日：2008-02-14
申请号：US11834994
申请日：2007-08-07
申请人： Shinji HIMORI , Shoichiro MATSUYAMA , Atsushi MATSUURA , Hiroshi INAZUMACHI , Mamoru KOSAKAI , Yukio MIURA , Keigo MAKI
发明人： Shinji HIMORI , Shoichiro MATSUYAMA , Atsushi MATSUURA , Hiroshi INAZUMACHI , Mamoru KOSAKAI , Yukio MIURA , Keigo MAKI
IPC分类号： H01L21/683 , H01L21/00
CPC分类号： H01L21/6833
摘要： An electrostatic chuck device includes an electrostatic chuck section including a substrate and a power supply terminal for applying a DC voltage to an electrostatic-adsorption inner electrode; and a metal base section fixed to the other main surface of the electrostatic chuck section. Here, a concave portion is formed in the main surface of the metal base section facing the electrostatic chuck section and a dielectric plate is fixed to the concave portion. The dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric plate and the concave portion are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric constant of the insulating adhesive bonding layer is smaller than that of any one of the dielectric plate and the substrate.
摘要翻译：静电吸盘装置包括：静电吸盘部，其包括基板和用于向静电吸附内部电极施加直流电压的电源端子; 以及固定在静电吸盘部的另一个主面上的金属基部。这里，在面向静电卡盘部的金属基部的主面上形成有凹部，电介质板固定在凹部。电介质板和静电卡盘部分之间插入绝缘粘合剂粘合层彼此粘合。电介质板和凹部通过绝缘性粘合剂层粘合而彼此接合。绝缘粘合剂接合层的介电常数小于介质板和基板中的任何一种的介电常数。

8. 发明申请

US20130062016A1 TRANSFER APPARATUS AND PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：传送装置和等离子体处理系统
公开(公告)号：US20130062016A1
公开(公告)日：2013-03-14
申请号：US13611327
申请日：2012-09-12
申请人： Shinji HIMORI , Takehiro KATO , Etsuji ITO
发明人： Shinji HIMORI , Takehiro KATO , Etsuji ITO
IPC分类号： B65G49/00 , B05C13/00
CPC分类号： H01L21/68707 , B65G43/00 , B65G47/90 , H01L21/67709
摘要： A transfer apparatus transfers an object to be transferred onto a case. The transfer apparatus includes a transfer arm, an arm shaft, a plurality of electromagnets, and a control unit. The transfer arm has a pick unit on a front end thereof and extends and retracts in a horizontal direction. The object to be transferred is held on the pick unit. The arm shaft supports the transfer arm. The plurality of electromagnets apply an force in upward direction to the transfer arm by generating a magnetic field in the case. The control unit controls the plurality of electromagnets in such a manner that when the transfer arm extends and retracts in the horizontal direction, the force in upward direction applied to the transfer arm increases as a length from the arm shaft to the front end of the transfer arm increases.
摘要翻译：传送装置将要传送的物体传送到外壳上。传送装置包括传送臂，臂轴，多个电磁体和控制单元。传送臂在其前端具有拾取单元，并在水平方向上伸缩。要传送的物体被保持在拾取单元上。臂轴支撑传送臂。多个电磁铁通过在壳体中产生磁场而向上传递臂施加力。控制单元以这样的方式控制多个电磁体，即当传送臂在水平方向上延伸和缩回时，施加到传送臂的向上方向的力随着从转轴到臂的前端的长度而增加手臂增加。

9. 发明申请

US20100224323A1 PLASMA PROCESSING APPARATUS AND ELECTRODE FOR SAME 有权
标题翻译：等离子体处理装置和电极
公开(公告)号：US20100224323A1
公开(公告)日：2010-09-09
申请号：US12718544
申请日：2010-03-05
申请人： Shinji HIMORI
发明人： Shinji HIMORI
IPC分类号： C23F1/08 , C23C16/509
CPC分类号： H01J37/32577 , H01J37/3255 , H01J2237/03
摘要： A plasma processing apparatus includes a processing chamber that plasma processes a target object therein, first and second electrodes that are provided in the processing chamber to face each other and have a processing space therebetween, and a high frequency power source that is connected to at least one of the first and second electrodes to supply high frequency power to the processing chamber. At least one of the first and second electrodes includes a base formed of a metal, a dielectric material provided at a central portion of a plasma side of the base, and a first resistor provided between the dielectric material and plasma, and formed of a metal with a predetermined pattern.
摘要翻译：一种等离子体处理装置包括：处理室，其中处理目标物体;设置在处理室中的第一和第二电极彼此面对并具有其间的处理空间;以及高频电源，至少连接至第一和第二电极之一，以向处理室提供高频功率。第一电极和第二电极中的至少一个包括由金属形成的基底，设置在基底的等离子体侧的中心部分处的电介质材料和设置在电介质材料和等离子体之间的第一电阻器，并且由金属具有预定的图案。

10. 发明申请

US20090197423A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工方法和基板加工装置
公开(公告)号：US20090197423A1
公开(公告)日：2009-08-06
申请号：US12363992
申请日：2009-02-02
申请人： Chishio KOSHIMIZU , Taichi HIRANO , Masanobu HONDA , Shinji HIMORI
发明人： Chishio KOSHIMIZU , Taichi HIRANO , Masanobu HONDA , Shinji HIMORI
IPC分类号： H01L21/3065
CPC分类号： H01L21/67109 , H01J37/32009 , H01J37/3255 , H01J37/32724 , H01L21/67248 , H01L21/6831
摘要： A substrate processing method that can eliminate unevenness in the distribution of plasma. The method is for a substrate processing apparatus that has a processing chamber in which a substrate is housed, a mounting stage that is disposed in the processing chamber and on which the substrate is mounted, and an electrode plate that is disposed in the processing chamber such as to face the mounting stage, the electrode plate being made of silicon and connected to a radio-frequency power source, and carries out plasma processing on the substrate. In the plasma processing, the temperature of the electrode plate is measured, and based on the measured temperature, the temperature of the electrode plate is maintained lower than a critical temperature at which the specific resistance value of the silicon starts changing.
摘要翻译：能够消除等离子体分布不均匀的基板处理方法。该方法是用于具有容纳基板的处理室的基板处理装置，设置在处理室中并安装有基板的安装台以及设置在处理室中的电极板为了面对安装台，电极板由硅制成并连接到射频电源，并对基片执行等离子体处理。在等离子体处理中，测量电极板的温度，并且基于测量的温度，电极板的温度保持低于硅的比电阻值开始变化的临界温度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式