专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090047795A1 PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND STORAGE MEDIUM 审中-公开
标题翻译：等离子体加工设备，等离子体处理方法和储存介质
公开(公告)号：US20090047795A1
公开(公告)日：2009-02-19
申请号：US12192388
申请日：2008-08-15
申请人： Tatsuo MATSUDO , Shinji Himori , Noriaki Imai , Takeshi Ohse , Jun Abe , Takayuki Katsunuma
发明人： Tatsuo MATSUDO , Shinji Himori , Noriaki Imai , Takeshi Ohse , Jun Abe , Takayuki Katsunuma
IPC分类号： H01L21/306 , H01L21/3065 , H01L21/31
CPC分类号： H01L21/3065 , H01J37/32091 , H01J37/32146 , H01J37/32165
摘要： A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals.
摘要翻译：一种等离子体处理装置包括：第一射频（RF）电源单元，用于将第一和第二电极中的至少一个施加于处理气体中产生等离子体，所述第一和第二电极在排气处理中相互面对地设置; 房间。所述第一RF电源单元由控制单元控制，使得所述第一RF功率具有用于产生等离子体的第一幅度的第一相位和所述第一RF功率具有第二幅度以用于基本上不产生等离子体的第二相位以预定间隔交替重复。

2. 发明申请

US20060081337A1 Capacitive coupling plasma processing apparatus 审中-公开
标题翻译：电容耦合等离子体处理装置
公开(公告)号：US20060081337A1
公开(公告)日：2006-04-20
申请号：US11292368
申请日：2005-12-02
申请人： Shinji Himori , Kimihiro Higuchi , Tatsuo Matsudo , Etsuo Iijima , Hiroharu Ito , Shoichiro Matsuyama , Noriaki Imai , Kazuya Nagaseki
发明人： Shinji Himori , Kimihiro Higuchi , Tatsuo Matsudo , Etsuo Iijima , Hiroharu Ito , Shoichiro Matsuyama , Noriaki Imai , Kazuya Nagaseki
IPC分类号： C23F1/00 , C23C14/00
CPC分类号： H01J37/32091 , H01J2237/2001
摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode serving as a cathode electrode, and a second electrode grounded to serve as an anode electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. The second electrode includes a conductive counter surface facing the first electrode and exposed to the plasma generation region.
摘要翻译：电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。在室中，用作阴极的第一电极和接地以用作阳极的第二电极彼此相对地设置。设置RF电源以向第一电极提供RF功率以在第一和第二电极之间的等离子体产生区域内形成RF电场，以将处理气体转化为等离子体。目标基板由第一和第二电极之间的支撑构件支撑，使得其工艺目标表面面向第二电极。第二电极包括面向第一电极并暴露于等离子体产生区域的导电计数器表面。

3. 发明申请

US20060118044A1 Capacitive coupling plasma processing apparatus 有权
标题翻译：电容耦合等离子体处理装置
公开(公告)号：US20060118044A1
公开(公告)日：2006-06-08
申请号：US11292353
申请日：2005-12-02
申请人： Shinji Himori , Noriaki Imai , Katsumi Horiguchi , Takaaki Nezu , Shoichiro Matsuyama , Hiroki Matsumaru , Toshihiro Hayami , Kazuya Nagaseki , Itsuko Sakai , Tokuhisa Ohiwa , Yoshikazu Sugiyasu
发明人： Shinji Himori , Noriaki Imai , Katsumi Horiguchi , Takaaki Nezu , Shoichiro Matsuyama , Hiroki Matsumaru , Toshihiro Hayami , Kazuya Nagaseki , Itsuko Sakai , Tokuhisa Ohiwa , Yoshikazu Sugiyasu
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32697 , H01J37/32082
摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first or second electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. A conductive functional surface is disposed in a surrounding region around the plasma generation region and grounded to be coupled with the plasma in a sense of DC to expand the plasma.
摘要翻译：电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。在腔室中，第一电极和第二电极相对设置。设置RF电源以向第一或第二电极提供RF功率，以在第一和第二电极之间的等离子体产生区域内形成RF电场，以将处理气体转化为等离子体。目标基板由第一和第二电极之间的支撑构件支撑，使得其工艺目标表面面向第二电极。导电功能表面设置在等离子体产生区域周围的周围区域中，并且被接地以与DC等离子体耦合以扩展等离子体。

4. 发明授权

US07767055B2 Capacitive coupling plasma processing apparatus 有权
标题翻译：电容耦合等离子体处理装置
公开(公告)号：US07767055B2
公开(公告)日：2010-08-03
申请号：US11292353
申请日：2005-12-02
申请人： Shinji Himori , Noriaki Imai , Katsumi Horiguchi , Takaaki Nezu , Shoichiro Matsuyama , Hiroki Matsumaru , Toshihiro Hayami , Kazuya Nagaseki , Itsuko Sakai , Tokuhisa Ohiwa , Yoshikazu Sugiyasu
发明人： Shinji Himori , Noriaki Imai , Katsumi Horiguchi , Takaaki Nezu , Shoichiro Matsuyama , Hiroki Matsumaru , Toshihiro Hayami , Kazuya Nagaseki , Itsuko Sakai , Tokuhisa Ohiwa , Yoshikazu Sugiyasu
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/32697 , H01J37/32082
摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first or second electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. A conductive functional surface is disposed in a surrounding region around the plasma generation region and grounded to be coupled with the plasma in a sense of DC to expand the plasma.
摘要翻译：电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。在腔室中，第一电极和第二电极相对设置。设置RF电源以向第一或第二电极提供RF功率，以在第一和第二电极之间的等离子体产生区域内形成RF电场，以将处理气体转化为等离子体。目标基板由第一和第二电极之间的支撑构件支撑，使得其工艺目标表面面向第二电极。导电功能表面设置在等离子体产生区域周围的周围区域中，并且被接地以与DC等离子体耦合以扩展等离子体。

5. 发明申请

US20070228009A1 PLASMA PROCESSING APPARATUS AND METHOD 有权
标题翻译：等离子体加工设备和方法
公开(公告)号：US20070228009A1
公开(公告)日：2007-10-04
申请号：US11691678
申请日：2007-03-27
申请人： Yohei YAMAZAWA , Noriaki Imai
发明人： Yohei YAMAZAWA , Noriaki Imai
IPC分类号： C23F1/00
CPC分类号： H01J37/32321 , H01J37/32091 , H01J37/32183 , H01L21/3065
摘要： In a plasma processing apparatus in which a radio-frequency power from a radio-frequency power source is supplied to at least one of an upper electrode and a lower electrode disposed to vertically face each other in a process vessel, to thereby generate, in the process vessel, plasma with which a substrate is processed, a chemical component emitting member which is caused to emit a chemical component necessary for processing the substrate into the process vessel by entrance of ions in the plasma generated in the process vessel is provided in the process vessel in an exposed state, and an impedance varying circuit varying impedance on the chemical component emitting member side of the plasma generated in the process vessel to frequency of the radio-frequency power source is connected to the chemical component emitting member.
摘要翻译：在等离子体处理装置中，其中来自射频电源的射频功率被提供给在处理容器中彼此垂直设置的上电极和下电极中的至少一个，从而在处理容器，处理基板的等离子体，通过在处理容器中产生的等离子体中的离子进入而将通过处理基板进入处理容器所需的化学成分发出的化学成分发射部件并且将处理容器中产生的等离子体的化学成分发射部件侧的阻抗变化电路的阻抗变化电路与射频电源的频率连接，并与化学成分发射部件连接。

6. 发明申请

US20100252198A1 PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：等离子体加工设备和方法
公开(公告)号：US20100252198A1
公开(公告)日：2010-10-07
申请号：US12816440
申请日：2010-06-16
申请人： Yohei Yamazawa , Noriaki Imai
发明人： Yohei Yamazawa , Noriaki Imai
IPC分类号： H01L21/465
CPC分类号： H01J37/32321 , H01J37/32091 , H01J37/32183 , H01L21/3065
摘要： In a plasma processing apparatus in which a radio-frequency power from a radio-frequency power source is supplied to an electrode disposed in a process vessel, to thereby generate, in the process vessel, plasma with which a substrate is processed, a chemical component emitting member which is caused to emit a chemical component necessary for processing the substrate into the process vessel by entrance of ions in the plasma generated in the process vessel is provided in the process vessel in an exposed state, and an impedance varying circuit varying impedance on the chemical component emitting member side of the plasma generated in the process vessel to frequency of the radio-frequency power source is connected to the chemical component emitting member.
摘要翻译：在等离子体处理装置中，将来自射频电源的射频功率供给到设置在处理容器中的电极，从而在处理容器中产生加工有基板的等离子体，化学成分通过在处理容器中产生的等离子体中的离子的入射将基板发射到处理容器中所需的化学成分被发射到处理容器中，并且阻抗变化电路在将处理容器中产生的等离子体的化学成分发射部分侧与射频电源的频率连接到化学成分发射部件。

7. 发明授权

US07758929B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US07758929B2
公开(公告)日：2010-07-20
申请号：US11691678
申请日：2007-03-27
申请人： Yohei Yamazawa , Noriaki Imai
发明人： Yohei Yamazawa , Noriaki Imai
IPC分类号： H05H1/24
CPC分类号： H01J37/32321 , H01J37/32091 , H01J37/32183 , H01L21/3065
摘要： In a plasma processing apparatus in which a radio-frequency power from a radio-frequency power source is supplied to at least one of an upper electrode and a lower electrode disposed to vertically face each other in a process vessel, to thereby generate, in the process vessel, plasma with which a substrate is processed, a chemical component emitting member which is caused to emit a chemical component necessary for processing the substrate into the process vessel by entrance of ions in the plasma generated in the process vessel is provided in the process vessel in an exposed state, and an impedance varying circuit varying impedance on the chemical component emitting member side of the plasma generated in the process vessel to frequency of the radio-frequency power source is connected to the chemical component emitting member.
摘要翻译：在等离子体处理装置中，其中来自射频电源的射频功率被提供给在处理容器中彼此垂直设置的上电极和下电极中的至少一个，从而在处理容器，处理基板的等离子体，通过在处理容器中产生的等离子体中的离子进入而将通过处理基板进入处理容器所需的化学成分发出的化学成分发射部件并且将处理容器中产生的等离子体的化学成分发射部件侧的阻抗变化电路的阻抗变化电路与射频电源的频率连接，并与化学成分发射部件连接。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式