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    • 1. 发明授权
    • Substrate processing apparatus
    • 基板加工装置
    • US09349618B2
    • 2016-05-24
    • US13344267
    • 2012-01-05
    • Jun YamawakuChishio Koshimizu
    • Jun YamawakuChishio Koshimizu
    • H01L21/3065H01L21/67H01J37/32H01L21/687
    • H01L21/67069H01J37/32477H01J37/32559H01J37/32642H01L21/68735
    • A substrate processing apparatus capable of removing deposits attached on a component of a lower temperature in a gap between two components, temperatures of which are greatly different from each other, without degrading a working ratio of the substrate processing apparatus. In the substrate processing apparatus, a chamber receives a wafer, a focus ring surrounds the wafer disposed in the chamber, a side surface protective member transmits a laser beam, a laser beam irradiating apparatus irradiates the laser beam to the side surface protective member, an inner focus ring of the focus ring is disposed adjacent to the wafer and is cooled down and an outer focus ring surrounds the inner focus ring and is not cooled down in a focus ring, and a facing surface of the side surface protective member faces a gap between the inner focus ring and the outer focus ring.
    • 一种基板处理装置,其能够在不降低基板处理装置的加工率的情况下,除去附着在两个部件之间的间隙中的两个部件之间的间隙附近的沉积物,温度彼此大不相同。 在基板处理装置中,室接收晶片,聚焦环围绕设置在室中的晶片,侧面保护构件透射激光束,激光束照射装置将激光束照射到侧面保护构件, 聚焦环的内聚焦环与晶片相邻地设置并被冷却,并且外聚焦环围绕内聚焦环,并且在聚焦环中不被冷却,并且侧表面保护构件的面对表面 在内聚焦环和外聚焦环之间。
    • 2. 发明授权
    • Temperature measuring method, storage medium, and program
    • 温度测量方法,存储介质和程序
    • US08825434B2
    • 2014-09-02
    • US13248538
    • 2011-09-29
    • Chishio KoshimizuJun YamawakuTatsuo Matsudo
    • Chishio KoshimizuJun YamawakuTatsuo Matsudo
    • G01K11/00G01K11/12G01B11/06G01B9/02
    • G01K11/125G01B9/02021G01B9/02025G01B9/0209G01B11/0675
    • A temperature measuring method includes: transmitting a light to a measurement point of an object to be measured, the object being a substrate on which a thin film is formed; measuring a first interference wave caused by a reflected light from a surface of the substrate, and a second interference wave caused by reflected lights from an interface between the substrate and the thin film and from a rear surface of the thin film; calculating an optical path length from the first interference wave to the second interference wave; calculating a film thickness of the thin film; calculating an optical path difference between an optical path length of the substrate and the calculated optical path length; compensating for the optical path length from the first interference wave to the second interference wave; and calculating a temperature of the object at the measurement point.
    • 温度测量方法包括:将光传输到待测物体的测量点,所述物体是其上形成有薄膜的基板; 测量由来自基板的表面的反射光引起的第一干涉波,以及由来自基板和薄膜之间的界面和薄膜的后表面的反射光引起的第二干涉波; 计算从第一干涉波到第二干涉波的光路长度; 计算薄膜的膜厚度; 计算基板的光路长度与算出的光程长度之间的光程差; 补偿从第一干涉波到第二干涉波的光路长度; 并计算测量点处的物体的温度。
    • 3. 发明授权
    • Substrate transfer device and substrate transfer method
    • 基板转印装置和基板转印方法
    • US08409328B2
    • 2013-04-02
    • US12726598
    • 2010-03-18
    • Jun YamawakuJunji OikawaHiroyuki Nakayama
    • Jun YamawakuJunji OikawaHiroyuki Nakayama
    • B03C3/016
    • H01L21/67781H01L21/67017
    • A substrate transfer device includes an atmosphere introduction unit and an atmosphere exhaust unit provided at a top and a bottom portion of a main body of the device, respectively; and a substrate transfer mechanism provided between the atmosphere introduction unit and the atmosphere exhaust unit. The substrate transfer device further includes a downward flow forming unit provided, adjacent to the atmosphere introduction unit, to allow an atmosphere to be introduced through the atmosphere introduction unit and to downwardly flow through the substrate transfer mechanism and be exhausted through the atmosphere exhaust unit; and a gas ionizing unit for ionizing the atmosphere and a particle collecting unit for collecting particles included in the atmosphere, the gas ionizing unit and the particle collecting unit being sequentially provided in the direction in which the atmosphere downwardly flows, between the downward flow forming unit and the substrate transfer mechanism.
    • 基板转印装置包括分别设置在装置的主体的顶部和底部的气氛引入单元和气体排出单元; 以及设置在大气引入单元和大气排气单元之间的基板输送机构。 基板转印装置还包括与大气引入单元相邻设置的向下流动形成单元,以允许气氛通过大气引入单元引入并向下流过基板传送机构并通过大气排气单元排出; 和用于使气氛离子化的气体离子化单元和用于收集包含在大气中的颗粒的颗粒收集单元,气体离子化单元和颗粒收集单元沿着大气向下流动的方向依次设置在下流形成单元 和基板转印机构。
    • 5. 发明申请
    • PLASMA PROCESSING APPARATUS
    • 等离子体加工设备
    • US20120247954A1
    • 2012-10-04
    • US13432623
    • 2012-03-28
    • Jun YAMAWAKUChishio KOSHIMIZU
    • Jun YAMAWAKUChishio KOSHIMIZU
    • C23F4/00
    • H01J37/32091H01J37/32642H01J37/32715
    • Disclosed is a capacitively-coupled plasma etching apparatus, in which a focus ring is provided surrounding a substrate placing area of a placing table for adjusting a state of plasma. A ring type insulating member is installed along the focus ring between the top surface of the placing table and the bottom surface of the focus ring, and a heat transfer member is installed between the top surface of the placing table and the bottom surface of the focus ring to be closely attached to the top surface and the bottom surface at a position adjacent to the insulating member in a diameter direction of a wafer. During the plasma processing, the heat in the focus ring is transferred to the placing table through the heat transfer member to be cooled down and the amount of sediment attached to the rear surface of the wafer can be reduced.
    • 公开了一种电容耦合等离子体蚀刻装置,其中围绕用于调节等离子体状态的放置台的基板放置区域设置聚焦环。 环形绝缘构件沿着聚焦环安装在放置台的顶表面和聚焦环的底表面之间,传热构件安装在放置台的顶表面和焦点的底表面之间 环在晶片的直径方向上在与绝缘构件相邻的位置处紧密附着到顶表面和底表面。 在等离子体处理期间,聚焦环中的热量通过传热构件传递到放置台以被冷却,并且可以减少附着到晶片的后表面的沉积物的量。
    • 6. 发明授权
    • Substrate transfer module and substrate processing system
    • 基板转移模块和基板处理系统
    • US08257498B2
    • 2012-09-04
    • US12180028
    • 2008-07-25
    • Jun YamawakuTsuyoshi Moriya
    • Jun YamawakuTsuyoshi Moriya
    • H01L21/67
    • H01L21/67766H01L21/67778H01L21/67781
    • A substrate transfer module that can prevent corrosion of components, adhesion of particles to the substrate, and increases in the manufacturing cost and the size of the substrate transfer module. A substrate transfer module is connected to a substrate processing module. The substrate processing module implements desired processing on a substrate. A substrate transfer device transfers a substrate and includes a holding unit and a moving unit. The holding unit holds the substrate, and the moving unit moves the holding unit. A transfer chamber houses the substrate transfer device in an interior thereof that is isolated from an external atmosphere. An isolation device isolates at least the holding unit and the substrate held by the holding unit from an interior atmosphere of the transfer chamber.
    • 可以防止组分腐蚀,颗粒粘附到基底上的衬底转移模块,以及衬底转移模块的制造成本和尺寸的增加。 衬底转移模块连接到衬底处理模块。 衬底处理模块在衬底上实现所需的处理。 衬底传送装置传送衬底并且包括保持单元和移动单元。 保持单元保持基板,移动单元移动保持单元。 传送室在其内部容纳与外部气氛隔离的衬底传送装置。 隔离装置至少将保持单元和由保持单元保持的基板与传送室的内部空气隔离。
    • 7. 发明申请
    • SUBSTRATE PROCESSING APPARATUS
    • 基板加工设备
    • US20120175063A1
    • 2012-07-12
    • US13344267
    • 2012-01-05
    • Jun YAMAWAKUChishio KOSHIMIZU
    • Jun YAMAWAKUChishio KOSHIMIZU
    • H01L21/3065
    • H01L21/67069H01J37/32477H01J37/32559H01J37/32642H01L21/68735
    • A substrate processing apparatus capable of removing deposits attached on a component of a lower temperature in a gap between two components, temperatures of which are greatly different from each other, without degrading a working ratio of the substrate processing apparatus. In the substrate processing apparatus, a chamber receives a wafer, a focus ring surrounds the wafer disposed in the chamber, a side surface protective member transmits a laser beam, a laser beam irradiating apparatus irradiates the laser beam to the side surface protective member, an inner focus ring of the focus ring is disposed adjacent to the wafer and is cooled down and an outer focus ring surrounds the inner focus ring and is not cooled down in a focus ring, and a facing surface of the side surface protective member faces a gap between the inner focus ring and the outer focus ring.
    • 一种基板处理装置,其能够在不降低基板处理装置的加工率的情况下,除去附着在两个部件之间的间隙中的两个部件之间的间隙附近的沉积物,温度彼此大不相同。 在基板处理装置中,室接收晶片,聚焦环围绕设置在室中的晶片,侧面保护构件透射激光束,激光束照射装置将激光束照射到侧面保护构件, 聚焦环的内聚焦环与晶片相邻地设置并被冷却,并且外聚焦环围绕内聚焦环,并且在聚焦环中不被冷却,并且侧表面保护构件的面对表面 在内聚焦环和外聚焦环之间。
    • 10. 发明申请
    • SUBSTRATE TRANSFER DEVICE AND SUBSTRATE TRANSFER METHOD
    • 基板传输设备和基板传输方法
    • US20100236405A1
    • 2010-09-23
    • US12726598
    • 2010-03-18
    • Jun YamawakuJunji OikawaHiroyuki Nakayama
    • Jun YamawakuJunji OikawaHiroyuki Nakayama
    • B03C3/00B01J19/08B03C3/45
    • H01L21/67781H01L21/67017
    • A substrate transfer device includes an atmosphere introduction unit and an atmosphere exhaust unit provided at a top and a bottom portion of a main body of the device, respectively; and a substrate transfer mechanism provided between the atmosphere introduction unit and the atmosphere exhaust unit. The substrate transfer device further includes a downward flow forming unit provided, adjacent to the atmosphere introduction unit, to allow an atmosphere to be introduced through the atmosphere introduction unit and to downwardly flow through the substrate transfer mechanism and be exhausted through the atmosphere exhaust unit; and a gas ionizing unit for ionizing the atmosphere and a particle collecting unit for collecting particles included in the atmosphere, the gas ionizing unit and the particle collecting unit being sequentially provided in the direction in which the atmosphere downwardly flows, between the downward flow forming unit and the substrate transfer mechanism.
    • 基板转印装置包括分别设置在装置的主体的顶部和底部的气氛引入单元和气体排出单元; 以及设置在大气引入单元和大气排气单元之间的基板输送机构。 基板转印装置还包括与大气引入单元相邻设置的向下流动形成单元,以允许气氛通过大气引入单元引入并向下流过基板传送机构并通过大气排气单元排出; 和用于使气氛离子化的气体离子化单元和用于收集包含在大气中的颗粒的颗粒收集单元,气体离子化单元和颗粒收集单元沿着大气向下流动的方向依次设置在下流形成单元 和基板转印机构。