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1. 发明授权

US09349618B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US09349618B2
公开(公告)日：2016-05-24
申请号：US13344267
申请日：2012-01-05
申请人： Jun Yamawaku , Chishio Koshimizu
发明人： Jun Yamawaku , Chishio Koshimizu
IPC分类号： H01L21/3065 , H01L21/67 , H01J37/32 , H01L21/687
CPC分类号： H01L21/67069 , H01J37/32477 , H01J37/32559 , H01J37/32642 , H01L21/68735
摘要： A substrate processing apparatus capable of removing deposits attached on a component of a lower temperature in a gap between two components, temperatures of which are greatly different from each other, without degrading a working ratio of the substrate processing apparatus. In the substrate processing apparatus, a chamber receives a wafer, a focus ring surrounds the wafer disposed in the chamber, a side surface protective member transmits a laser beam, a laser beam irradiating apparatus irradiates the laser beam to the side surface protective member, an inner focus ring of the focus ring is disposed adjacent to the wafer and is cooled down and an outer focus ring surrounds the inner focus ring and is not cooled down in a focus ring, and a facing surface of the side surface protective member faces a gap between the inner focus ring and the outer focus ring.
摘要翻译：一种基板处理装置，其能够在不降低基板处理装置的加工率的情况下，除去附着在两个部件之间的间隙中的两个部件之间的间隙附近的沉积物，温度彼此大不相同。在基板处理装置中，室接收晶片，聚焦环围绕设置在室中的晶片，侧面保护构件透射激光束，激光束照射装置将激光束照射到侧面保护构件，聚焦环的内聚焦环与晶片相邻地设置并被冷却，并且外聚焦环围绕内聚焦环，并且在聚焦环中不被冷却，并且侧表面保护构件的面对表面在内聚焦环和外聚焦环之间。

2. 发明授权

US08825434B2 Temperature measuring method, storage medium, and program 有权
标题翻译：温度测量方法，存储介质和程序
公开(公告)号：US08825434B2
公开(公告)日：2014-09-02
申请号：US13248538
申请日：2011-09-29
申请人： Chishio Koshimizu , Jun Yamawaku , Tatsuo Matsudo
发明人： Chishio Koshimizu , Jun Yamawaku , Tatsuo Matsudo
IPC分类号： G01K11/00 , G01K11/12 , G01B11/06 , G01B9/02
CPC分类号： G01K11/125 , G01B9/02021 , G01B9/02025 , G01B9/0209 , G01B11/0675
摘要： A temperature measuring method includes: transmitting a light to a measurement point of an object to be measured, the object being a substrate on which a thin film is formed; measuring a first interference wave caused by a reflected light from a surface of the substrate, and a second interference wave caused by reflected lights from an interface between the substrate and the thin film and from a rear surface of the thin film; calculating an optical path length from the first interference wave to the second interference wave; calculating a film thickness of the thin film; calculating an optical path difference between an optical path length of the substrate and the calculated optical path length; compensating for the optical path length from the first interference wave to the second interference wave; and calculating a temperature of the object at the measurement point.
摘要翻译：温度测量方法包括：将光传输到待测物体的测量点，所述物体是其上形成有薄膜的基板; 测量由来自基板的表面的反射光引起的第一干涉波，以及由来自基板和薄膜之间的界面和薄膜的后表面的反射光引起的第二干涉波; 计算从第一干涉波到第二干涉波的光路长度; 计算薄膜的膜厚度; 计算基板的光路长度与算出的光程长度之间的光程差; 补偿从第一干涉波到第二干涉波的光路长度; 并计算测量点处的物体的温度。

3. 发明授权

US08409328B2 Substrate transfer device and substrate transfer method 有权
标题翻译：基板转印装置和基板转印方法
公开(公告)号：US08409328B2
公开(公告)日：2013-04-02
申请号：US12726598
申请日：2010-03-18
申请人： Jun Yamawaku , Junji Oikawa , Hiroyuki Nakayama
发明人： Jun Yamawaku , Junji Oikawa , Hiroyuki Nakayama
IPC分类号： B03C3/016
CPC分类号： H01L21/67781 , H01L21/67017
摘要： A substrate transfer device includes an atmosphere introduction unit and an atmosphere exhaust unit provided at a top and a bottom portion of a main body of the device, respectively; and a substrate transfer mechanism provided between the atmosphere introduction unit and the atmosphere exhaust unit. The substrate transfer device further includes a downward flow forming unit provided, adjacent to the atmosphere introduction unit, to allow an atmosphere to be introduced through the atmosphere introduction unit and to downwardly flow through the substrate transfer mechanism and be exhausted through the atmosphere exhaust unit; and a gas ionizing unit for ionizing the atmosphere and a particle collecting unit for collecting particles included in the atmosphere, the gas ionizing unit and the particle collecting unit being sequentially provided in the direction in which the atmosphere downwardly flows, between the downward flow forming unit and the substrate transfer mechanism.
摘要翻译：基板转印装置包括分别设置在装置的主体的顶部和底部的气氛引入单元和气体排出单元; 以及设置在大气引入单元和大气排气单元之间的基板输送机构。基板转印装置还包括与大气引入单元相邻设置的向下流动形成单元，以允许气氛通过大气引入单元引入并向下流过基板传送机构并通过大气排气单元排出; 和用于使气氛离子化的气体离子化单元和用于收集包含在大气中的颗粒的颗粒收集单元，气体离子化单元和颗粒收集单元沿着大气向下流动的方向依次设置在下流形成单元和基板转印机构。

4. 发明授权

US08398745B2 Substrate processing apparatus and exhaust method therefor 有权
标题翻译：基板处理装置及其排气方法
公开(公告)号：US08398745B2
公开(公告)日：2013-03-19
申请号：US12726612
申请日：2010-03-18
申请人： Jun Yamawaku , Junji Oikawa , Hiroyuki Nakayama
发明人： Jun Yamawaku , Junji Oikawa , Hiroyuki Nakayama
IPC分类号： B03C3/019 , B03C3/36
CPC分类号： H01L21/67017
摘要： A substrate processing apparatus includes a processing chamber for accommodating therein a processing target substrate; a gas exhaust path through which a gas inside the processing chamber is exhausted; one or more exhaust pumps provided in the gas exhaust path; and a scrubber for collecting harmful components from an exhaust gas. The apparatus further includes an ionized gas supply unit for supplying to the gas exhaust path an ionized gas for neutralizing charged particles included in the exhaust gas flowing therethrough.
摘要翻译：基板处理装置包括：处理室，用于在其中容纳加工对象基板; 气体排出通道，处理室内的气体通过该排气路径排出; 设置在排气通道中的一个或多个排气泵; 以及用于从废气中收集有害成分的洗涤器。该装置还包括电离气体供应单元，用于向气体排出通道供应用于中和包含在流过其中的废气中的带电粒子的电离气体。

5. 发明申请

US20120247954A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20120247954A1
公开(公告)日：2012-10-04
申请号：US13432623
申请日：2012-03-28
申请人： Jun YAMAWAKU , Chishio KOSHIMIZU
发明人： Jun YAMAWAKU , Chishio KOSHIMIZU
IPC分类号： C23F4/00
CPC分类号： H01J37/32091 , H01J37/32642 , H01J37/32715
摘要： Disclosed is a capacitively-coupled plasma etching apparatus, in which a focus ring is provided surrounding a substrate placing area of a placing table for adjusting a state of plasma. A ring type insulating member is installed along the focus ring between the top surface of the placing table and the bottom surface of the focus ring, and a heat transfer member is installed between the top surface of the placing table and the bottom surface of the focus ring to be closely attached to the top surface and the bottom surface at a position adjacent to the insulating member in a diameter direction of a wafer. During the plasma processing, the heat in the focus ring is transferred to the placing table through the heat transfer member to be cooled down and the amount of sediment attached to the rear surface of the wafer can be reduced.
摘要翻译：公开了一种电容耦合等离子体蚀刻装置，其中围绕用于调节等离子体状态的放置台的基板放置区域设置聚焦环。环形绝缘构件沿着聚焦环安装在放置台的顶表面和聚焦环的底表面之间，传热构件安装在放置台的顶表面和焦点的底表面之间环在晶片的直径方向上在与绝缘构件相邻的位置处紧密附着到顶表面和底表面。在等离子体处理期间，聚焦环中的热量通过传热构件传递到放置台以被冷却，并且可以减少附着到晶片的后表面的沉积物的量。

6. 发明授权

US08257498B2 Substrate transfer module and substrate processing system 有权
标题翻译：基板转移模块和基板处理系统
公开(公告)号：US08257498B2
公开(公告)日：2012-09-04
申请号：US12180028
申请日：2008-07-25
申请人： Jun Yamawaku , Tsuyoshi Moriya
发明人： Jun Yamawaku , Tsuyoshi Moriya
IPC分类号： H01L21/67
CPC分类号： H01L21/67766 , H01L21/67778 , H01L21/67781
摘要： A substrate transfer module that can prevent corrosion of components, adhesion of particles to the substrate, and increases in the manufacturing cost and the size of the substrate transfer module. A substrate transfer module is connected to a substrate processing module. The substrate processing module implements desired processing on a substrate. A substrate transfer device transfers a substrate and includes a holding unit and a moving unit. The holding unit holds the substrate, and the moving unit moves the holding unit. A transfer chamber houses the substrate transfer device in an interior thereof that is isolated from an external atmosphere. An isolation device isolates at least the holding unit and the substrate held by the holding unit from an interior atmosphere of the transfer chamber.
摘要翻译：可以防止组分腐蚀，颗粒粘附到基底上的衬底转移模块，以及衬底转移模块的制造成本和尺寸的增加。衬底转移模块连接到衬底处理模块。衬底处理模块在衬底上实现所需的处理。衬底传送装置传送衬底并且包括保持单元和移动单元。保持单元保持基板，移动单元移动保持单元。传送室在其内部容纳与外部气氛隔离的衬底传送装置。隔离装置至少将保持单元和由保持单元保持的基板与传送室的内部空气隔离。

7. 发明申请

US20120175063A1 SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工设备
公开(公告)号：US20120175063A1
公开(公告)日：2012-07-12
申请号：US13344267
申请日：2012-01-05
申请人： Jun YAMAWAKU , Chishio KOSHIMIZU
发明人： Jun YAMAWAKU , Chishio KOSHIMIZU
IPC分类号： H01L21/3065
CPC分类号： H01L21/67069 , H01J37/32477 , H01J37/32559 , H01J37/32642 , H01L21/68735
摘要： A substrate processing apparatus capable of removing deposits attached on a component of a lower temperature in a gap between two components, temperatures of which are greatly different from each other, without degrading a working ratio of the substrate processing apparatus. In the substrate processing apparatus, a chamber receives a wafer, a focus ring surrounds the wafer disposed in the chamber, a side surface protective member transmits a laser beam, a laser beam irradiating apparatus irradiates the laser beam to the side surface protective member, an inner focus ring of the focus ring is disposed adjacent to the wafer and is cooled down and an outer focus ring surrounds the inner focus ring and is not cooled down in a focus ring, and a facing surface of the side surface protective member faces a gap between the inner focus ring and the outer focus ring.
摘要翻译：一种基板处理装置，其能够在不降低基板处理装置的加工率的情况下，除去附着在两个部件之间的间隙中的两个部件之间的间隙附近的沉积物，温度彼此大不相同。在基板处理装置中，室接收晶片，聚焦环围绕设置在室中的晶片，侧面保护构件透射激光束，激光束照射装置将激光束照射到侧面保护构件，聚焦环的内聚焦环与晶片相邻地设置并被冷却，并且外聚焦环围绕内聚焦环，并且在聚焦环中不被冷却，并且侧表面保护构件的面对表面在内聚焦环和外聚焦环之间。

8. 发明申请

US20120062870A1 PHYSICAL STATE MEASURING APPARATUS AND PHYSICAL STATE MEASURING METHOD 审中-公开
标题翻译：物理状态测量装置和物理状态测量方法
公开(公告)号：US20120062870A1
公开(公告)日：2012-03-15
申请号：US13231037
申请日：2011-09-13
申请人： Jun YAMAWAKU , Chishio KOSHIMIZU , Tatsuo MATSUDO , Kenji NAGAI
发明人： Jun YAMAWAKU , Chishio KOSHIMIZU , Tatsuo MATSUDO , Kenji NAGAI
IPC分类号： G01B9/02
CPC分类号： G01K11/125 , G01B9/02007 , G01B9/02021 , G01B9/02025 , G01B9/0209
摘要： The physical state measuring apparatus includes: a light source; a transmitting unit which transmits a light from the light source to a measurement point of an object to be measured; a nonlinear optical device which changes a wavelength of the light reflected by the measurement point to a wavelength that is different from the wavelength before the changing; a light receiving unit which receives the light whose wavelength has been changed; and a measuring unit which measures a physical state of the object to be measured at the measurement point based on a waveform of the light received by the light receiving unit.
摘要翻译：物理状态测量装置包括：光源; 发送单元，其将来自所述光源的光发送到待测量对象的测量点; 将由测量点反射的光的波长改变为与变化前的波长不同的波长的非线性光学装置; 接收波长已经改变的光的光接收单元; 以及测量单元，其基于由所述光接收单元接收的光的波形来测量所述测量点处的被测量物体的物理状态。

9. 发明申请

US20110211817A1 METHOD FOR HEATING PART IN PROCESSING CHAMBER OF SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR MANUFACTURING APPARATUS 有权
标题翻译：半导体制造装置和半导体制造装置的加热室加热部分的方法
公开(公告)号：US20110211817A1
公开(公告)日：2011-09-01
申请号：US13034858
申请日：2011-02-25
申请人： Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo
发明人： Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo
IPC分类号： F27D11/12 , H01L21/00
CPC分类号： H01L21/67115 , F27B17/0025 , F27D11/12
摘要： There is provided a method for heating a part within a processing chamber of a semiconductor manufacturing apparatus having a substrate in the processing chamber and performing a process on the substrate. The heating method includes generating heating lights which is generated by a heating light source provided outside the processing chamber and has a wavelength band capable of passing through a first part in the processing chamber and being absorbed into a second part in the processing chamber made of a material different from that of the first part, and heating the second part in the processing chamber by passing the heating lights through the first part in the processing chamber and irradiating the heating lights to the second part in the processing chamber.
摘要翻译：提供了一种用于加热在处理室中具有基板的半导体制造装置的处理室内的部件并在基板上进行处理的方法。该加热方法包括产生由设置在处理室外部的加热光源产生的加热灯，并且具有能够通过处理室中的第一部分并被吸收到处理室中的第二部分中的波长带与第一部分不同的材料，并且通过使加热灯通过处理室中的第一部分并且将加热灯照射到处理室中的第二部分来加热处理室中的第二部分。

10. 发明申请

US20100236405A1 SUBSTRATE TRANSFER DEVICE AND SUBSTRATE TRANSFER METHOD 有权
标题翻译：基板传输设备和基板传输方法
公开(公告)号：US20100236405A1
公开(公告)日：2010-09-23
申请号：US12726598
申请日：2010-03-18
申请人： Jun Yamawaku , Junji Oikawa , Hiroyuki Nakayama
发明人： Jun Yamawaku , Junji Oikawa , Hiroyuki Nakayama
IPC分类号： B03C3/00 , B01J19/08 , B03C3/45
CPC分类号： H01L21/67781 , H01L21/67017
摘要： A substrate transfer device includes an atmosphere introduction unit and an atmosphere exhaust unit provided at a top and a bottom portion of a main body of the device, respectively; and a substrate transfer mechanism provided between the atmosphere introduction unit and the atmosphere exhaust unit. The substrate transfer device further includes a downward flow forming unit provided, adjacent to the atmosphere introduction unit, to allow an atmosphere to be introduced through the atmosphere introduction unit and to downwardly flow through the substrate transfer mechanism and be exhausted through the atmosphere exhaust unit; and a gas ionizing unit for ionizing the atmosphere and a particle collecting unit for collecting particles included in the atmosphere, the gas ionizing unit and the particle collecting unit being sequentially provided in the direction in which the atmosphere downwardly flows, between the downward flow forming unit and the substrate transfer mechanism.
摘要翻译：基板转印装置包括分别设置在装置的主体的顶部和底部的气氛引入单元和气体排出单元; 以及设置在大气引入单元和大气排气单元之间的基板输送机构。基板转印装置还包括与大气引入单元相邻设置的向下流动形成单元，以允许气氛通过大气引入单元引入并向下流过基板传送机构并通过大气排气单元排出; 和用于使气氛离子化的气体离子化单元和用于收集包含在大气中的颗粒的颗粒收集单元，气体离子化单元和颗粒收集单元沿着大气向下流动的方向依次设置在下流形成单元和基板转印机构。

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