专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050082548A1 III-V group GaN-based semiconductor device and method of manufacturing the same 审中-公开
标题翻译： III-V族GaN基半导体器件及其制造方法
公开(公告)号：US20050082548A1
公开(公告)日：2005-04-21
申请号：US10951905
申请日：2004-09-29
申请人： Tan Sakong , Ho-sun Paek , Sung-nam Lee , Joong-kon Son , Won-seok Lee
发明人： Tan Sakong , Ho-sun Paek , Sung-nam Lee , Joong-kon Son , Won-seok Lee
IPC分类号： B82Y20/00 , H01S5/02 , H01S5/20 , H01S5/343 , H01L21/00 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： B82Y20/00 , H01S5/02 , H01S5/2009 , H01S5/3072 , H01S5/34333 , H01S2301/173 , H01S2301/176 , H01S2304/00
摘要： Provided are a III-V group GaN-based compound semiconductor device and a method of manufacturing the same. The device includes an AlGaN diffusion blocking layer and an InGaN sacrificial layer interposed between an active layer having a multiple quantum well and a p-type GaN-based compound semiconductor layer.
摘要翻译：提供III-V族GaN基化合物半导体器件及其制造方法。该器件包括插入在具有多量子阱的有源层和p型GaN基化合物半导体层之间的AlGaN扩散阻挡层和InGaN牺牲层。

2. 发明授权

US06992318B2 Semiconductor device having superlattice semiconductor layer and method of manufacturing the same 有权
标题翻译：具有超晶格半导体层的半导体器件及其制造方法
公开(公告)号：US06992318B2
公开(公告)日：2006-01-31
申请号：US10877982
申请日：2004-06-29
申请人： Won-seok Lee , Kyoung-ho Ha , Joon-seop Kwak , Ho-sun Paek , Sung-nam Lee , Tan Sakong
发明人： Won-seok Lee , Kyoung-ho Ha , Joon-seop Kwak , Ho-sun Paek , Sung-nam Lee , Tan Sakong
IPC分类号： H01L33/00 , H01L31/0304
CPC分类号： H01L33/04 , B82Y20/00 , H01L29/155 , H01L29/2003 , H01L33/06 , H01L33/32 , H01S2301/173
摘要： Provided are a semiconductor device having a superlattice semiconductor layer and a method of fabricating the same. The semiconductor device includes a superlattice semiconductor layer in which first material layers and second material layers formed of different materials are alternately stacked. A plurality holes are formed in the first material layers and the second material layers forming a superlattice structure, and the holes are filled with materials of the adjacent material layers. The provided superlattice structure reduces a driving voltage by transferring charges through the holes in the first material layers and the second material layers while maintaining a predetermined optical confinement characteristic.
摘要翻译：提供了具有超晶格半导体层的半导体器件及其制造方法。半导体器件包括超晶格半导体层，其中由不同材料形成的第一材料层和第二材料层交替堆叠。在第一材料层和第二材料层中形成多个孔，形成超晶格结构，并且用相邻材料层的材料填充孔。所提供的超晶格结构通过在保持预定的光限制特性的同时将电荷转移穿过第一材料层和第二材料层中的孔来降低驱动电压。

3. 发明申请

US20050029506A1 Semiconductor device having superlattice semiconductor layer and method of manufacturing the same 有权
标题翻译：具有超晶格半导体层的半导体器件及其制造方法
公开(公告)号：US20050029506A1
公开(公告)日：2005-02-10
申请号：US10877982
申请日：2004-06-29
申请人： Won-seok Lee , Kyoung-ho Ha , Joon-seop Kwak , Ho-sun Paek , Sung-nam Lee , Tan Sakong
发明人： Won-seok Lee , Kyoung-ho Ha , Joon-seop Kwak , Ho-sun Paek , Sung-nam Lee , Tan Sakong
IPC分类号： H01S5/343 , B82Y20/00 , H01L29/15 , H01L29/20 , H01S3/0941 , H01S5/22 , H01S5/223 , H01S5/32 , H01S5/323 , H01L33/00 , H01L29/06
CPC分类号： H01L33/04 , B82Y20/00 , H01L29/155 , H01L29/2003 , H01L33/06 , H01L33/32 , H01S2301/173
摘要： Provided are a semiconductor device having a superlattice semiconductor layer and a method of fabricating the same. The semiconductor device includes a superlattice semiconductor layer in which first material layers and second material layers formed of different materials are alternately stacked. A plurality holes are formed in the first material layers and the second material layers forming a superlattice structure, and the holes are filled with materials of the adjacent material layers. The provided superlattice structure reduces a driving voltage by transferring charges through the holes in the first material layers and the second material layers while maintaining a predetermined optical confinement characteristic.
摘要翻译：提供了具有超晶格半导体层的半导体器件及其制造方法。半导体器件包括超晶格半导体层，其中由不同材料形成的第一材料层和第二材料层交替堆叠。在第一材料层和第二材料层中形成多个孔，形成超晶格结构，并且用相邻材料层的材料填充孔。所提供的超晶格结构通过在保持预定的光限制特性的同时将电荷转移穿过第一材料层和第二材料层中的孔来降低驱动电压。

4. 发明授权

US06744064B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US06744064B2
公开(公告)日：2004-06-01
申请号：US09776846
申请日：2001-02-06
申请人： Sung-nam Lee , Yong-jo Park , Ok-hyun Nam , In-hwan Lee , Won-seok Lee , Shi-yun Cho , Cheol-soo Sone
发明人： Sung-nam Lee , Yong-jo Park , Ok-hyun Nam , In-hwan Lee , Won-seok Lee , Shi-yun Cho , Cheol-soo Sone
IPC分类号： H01L2906
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/2009 , H01S5/2013 , H01S5/3403 , H01S5/34333
摘要： A semiconductor light emitting device including means for reducing strain and carrier overflow caused by injection of a number of carriers in semiconductor light emitting devices using GaN is provided. The semiconductor light emitting device includes a multi-quantum barrier formed by depositing an AlGaN/GaN double layer a predetermined number of times, or a strain-compensating multiple quantum barrier formed at either the upper or lower sides of an active layer by depositing an AlGaN/InGaN double layer a predetermined number of times, and does not need a p-type clad layer.
摘要翻译：提供一种半导体发光器件，其包括用于通过使用GaN在半导体发光器件中注入多个载流子而减少应变和载流子溢出的装置。半导体发光器件包括通过将AlGaN / GaN双层沉积预定次数形成的多量子势垒，或通过在有源层的上侧或下侧形成的应变补偿多量子势垒，通过沉积AlGaN / InGaN双层预定次数，不需要p型覆层。

5. 发明授权

US07889546B2 Phase-change random access memory device, system having the same, and associated methods 有权
标题翻译：相变随机存取存储器件，具有相同的系统和相关方法
公开(公告)号：US07889546B2
公开(公告)日：2011-02-15
申请号：US12285656
申请日：2008-10-10
申请人： Joon-min Park , Young-kug Moon , Won-seok Lee
发明人： Joon-min Park , Young-kug Moon , Won-seok Lee
IPC分类号： G11C11/00
CPC分类号： G11C7/08 , G11C7/18 , G11C13/0004 , G11C2213/72
摘要： A phase-change random access memory (PRAM) device includes a PRAM cell array including a first sector and a second sector, a first global bit line coupled to a first local bit line of the first sector and a first local bit line of the second sector, and a first plurality of global bit line discharge units coupled to the first global bit line, the first plurality of global bit line discharge units configured to discharge the first global bit line in response to a first global discharge signal.
摘要翻译：相变随机存取存储器（PRAM）装置包括包括第一扇区和第二扇区的PRAM单元阵列，耦合到第一扇区的第一局部位线的第一全局位线和第二扇区的第一局部位线扇区和耦合到第一全局位线的第一多个全局位线放电单元，第一多个全局位线放电单元被配置为响应于第一全局放电信号而放电第一全局位线。

6. 发明授权

US07817489B2 Power supplying circuit and phase-change random access memory including the same 有权
标题翻译：供电电路和包括相同的相变随机存取存储器
公开(公告)号：US07817489B2
公开(公告)日：2010-10-19
申请号：US12251761
申请日：2008-10-15
申请人： Beak-hyung Cho , Kwang-ho Kim , Won-seok Lee
发明人： Beak-hyung Cho , Kwang-ho Kim , Won-seok Lee
IPC分类号： G11C5/14
CPC分类号： G11C5/145 , G11C13/0004 , G11C13/0038
摘要： A power supplying circuit (PSC) and a phase-change random access memory (PRAM) including the PSC. According to an aspect of the invention, the PSC includes: a first voltage generator configured to output a first voltage to a first terminal; and a second voltage generator configured to output a second voltage to a second terminal, the second voltage generator including: a voltage pump unit configured to output the second voltage based on a clock signal and a pump control signal; a pump output detector coupled to the voltage pump unit, the pump output detector configured to output a pump output detection signal; and a discharging unit coupled to the voltage pump unit, the discharging unit configured to discharge a level of the second voltage to a predetermined level in response to a discharge signal. Embodiments of the invention may prevent write and/or read malfunctions that can occur due to changes in the level of a voltage supplied to PRAM cell blocks.
摘要翻译：供电电路（PSC）和包括PSC的相变随机存取存储器（PRAM）。根据本发明的一个方面，PSC包括：第一电压发生器，被配置为将第一电压输出到第一端子; 以及第二电压发生器，被配置为向第二端子输出第二电压，所述第二电压发生器包括：电压泵单元，被配置为基于时钟信号和泵控制信号输出所述第二电压; 耦合到所述电压泵单元的泵输出检测器，所述泵输出检测器被配置为输出泵输出检测信号; 以及耦合到所述电压泵单元的放电单元，所述放电单元被配置为响应于放电信号将所述第二电压的电平放电到预定电平。本发明的实施例可以防止由于提供给PRAM单元块的电压的电平的变化而可能发生的写入和/或读取故障。

7. 发明申请

US20090097306A1 Phase-change random access memory device, system having the same, and associated methods 有权
标题翻译：相变随机存取存储器件，具有相同的系统和相关方法
公开(公告)号：US20090097306A1
公开(公告)日：2009-04-16
申请号：US12285656
申请日：2008-10-10
申请人： Joon-min Park , Young-kug Moon , Won-seok Lee
发明人： Joon-min Park , Young-kug Moon , Won-seok Lee
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C7/08 , G11C7/18 , G11C13/0004 , G11C2213/72
摘要： A phase-change random access memory (PRAM) device includes a PRAM cell array including a first sector and a second sector, a first global bit line coupled to a first local bit line of the first sector and a first local bit line of the second sector, and a first plurality of global bit line discharge units coupled to the first global bit line, the first plurality of global bit line discharge units configured to discharge the first global bit line in response to a first global discharge signal.
摘要翻译：相变随机存取存储器（PRAM）装置包括包括第一扇区和第二扇区的PRAM单元阵列，耦合到第一扇区的第一局部位线的第一全局位线和第二扇区的第一局部位线扇区和耦合到第一全局位线的第一多个全局位线放电单元，第一多个全局位线放电单元被配置为响应于第一全局放电信号而放电第一全局位线。

8. 发明授权

US06608982B2 Drying unit for liquid electrophotographic printing apparatus and liquid carrier drying method using the same 失效
公开(公告)号：US06608982B2
公开(公告)日：2003-08-19
申请号：US09854917
申请日：2001-05-15
申请人： Seong-soo Shin , Hyun-goo Woo , Won-seok Lee , Jae-myoung Choi
发明人： Seong-soo Shin , Hyun-goo Woo , Won-seok Lee , Jae-myoung Choi
IPC分类号： G03G1511
CPC分类号： G03G15/11 , G03G2215/017
摘要： A drying unit and method of drying for a liquid electrophotographic printing apparatus, the drying unit that is equipped in the printing apparatus comprising a developing unit that develops an image on an photosensitive medium using a liquid carrier as a mediator and a transfer unit that transcribes the developed image on a printing paper, so that the liquid carrier remaining on the photosensitive medium can be dried. The drying unit for the liquid electrophotographic printing apparatus is positioned near the photosensitive medium and includes a manifold having an inlet and an outlet; an inlet-outlet channel being between the inlet and the outlet and connecting them; a gas flowing unit by which the gas in the manifold is discharged through the outlet and gas flows in the manifold through the inlet; a condenser that condenses the evaporated carrier discharged through the outlet; and a heater that heats the gases flowing in the manifold through the inlet. Also, the liquid carrier drying method includes determining the injection condition; heating injection air according to the determined gas injection condition and evaporating the carrier on the photosensitive medium by injecting the heated gas at a predetermined speed in the manifold; discharging out of the manifold the carrier evaporated from the photosensitive medium and the air flowing in; and condensing the evaporated carrier at the manifold, of reheating the gas that is not condensed, injecting the gas at a predetermined speed into the manifold.

9. 发明授权

US07579406B2 Transparent thermoplastic resin compositions and process for preparing the same 有权
标题翻译：透明热塑性树脂组合物及其制备方法
公开(公告)号：US07579406B2
公开(公告)日：2009-08-25
申请号：US11206581
申请日：2005-08-18
申请人： Jeong-su Choi , Mi-young Lee , Hyong-min Bahn , Keun-hoon Yoo , Won-seok Lee
发明人： Jeong-su Choi , Mi-young Lee , Hyong-min Bahn , Keun-hoon Yoo , Won-seok Lee
IPC分类号： C08L47/00
CPC分类号： C08F285/00 , C08L33/04 , C08L51/04 , Y10S525/902 , C08F220/00 , C08L2666/04
摘要： The present invention relates to a transparent thermoplastic resin composition which characteristically contains A) 20-80 weight % of graft copolymer composed of a) conjugated diene rubber latex; b) intermediate layer prepared by copolymerization of acrylic acid alkylester derivative and aromatic vinyl derivative with the above a); and c) graft layer prepared by copolymerization of methacrylic acid alkylester derivative or acrylic acid alkylester derivative, a romatic vinyl derivative and vinyl cyan derivative with the above b) and B) 20-80 weight % of MSAN copolymer prepared by copolymerization of methacrylic acid alkylester derivative or acrylic acid alkylester derivative, aromatic vinyl derivative and vinyl cyan derivative. The transparent thermoplastic resin composition of the present invention has enhanced transparency, impact strength, surface gloss, weather resistance and color by being prepared by the method of the invention which is characterized by the steps of forming an intermediate layer by adding acrylic rubber to polybutadiene rubber, grafting, and regulating refractive indices of each monomers of a copolymer.
摘要翻译：本发明涉及一种透明热塑性树脂组合物，其特征在于包含A）20-80重量％的由共轭二烯橡胶胶乳组成的接枝共聚物; b）通过丙烯酸烷基酯衍生物和芳族乙烯基衍生物与上述a）的共聚制备的中间层; 和c）通过甲基丙烯酸烷基酯衍生物或丙烯酸烷基酯衍生物，芳香族乙烯基衍生物和乙烯基氰基衍生物与上述b）和B）共聚制备的接枝层，其为通过甲基丙烯酸烷基酯共聚制备的20-80重量％的MSAN共聚物衍生物或丙烯酸烷基酯衍生物，芳族乙烯基衍生物和乙烯基氰基衍生物。本发明的透明热塑性树脂组合物通过本发明的方法制备透明性，冲击强度，表面光泽，耐候性和颜色，其特征在于以下步骤：通过向聚丁二烯橡胶中加入丙烯酸橡胶形成中间层，接枝和调节共聚物各单体的折射率。

10. 发明申请

US20070078221A1 Thermoplastic resin composition and method for preparing the same 审中-公开
标题翻译：热塑性树脂组合物及其制备方法
公开(公告)号：US20070078221A1
公开(公告)日：2007-04-05
申请号：US11512452
申请日：2006-08-30
申请人： Jeong-su Choi , Hyong-min Bahn , Mi-young Lee , Won-seok Lee , Keun-hoon Yoo
发明人： Jeong-su Choi , Hyong-min Bahn , Mi-young Lee , Won-seok Lee , Keun-hoon Yoo
IPC分类号： C08L51/00
CPC分类号： C08F279/02 , C08F279/04 , C08F279/06 , C08L33/18 , C08L51/04 , C08L55/02 , C08L2203/202 , C08L2666/24 , C08L2666/02
摘要： The present invention relates to a thermoplastic resin composition and a preparation method of the same, and more precisely a thermoplastic resin having excellent impact strength, surface gloss, and beautiful color, as well as a high level of hardness and scratch resistance, which comprises a) a primary graft copolymer prepared by polymerization of conjugated diene rubber latex with (metha)acrylic acid alkyl ester compound, aromatic vinyl compound and vinyl cyan compound; and b) a secondary copolymer prepared by polymerization of (metha)acrylic acid alkyl ester compound with aromatic vinyl compound and vinyl cyan compound.
摘要翻译：本发明涉及热塑性树脂组合物及其制备方法，更准确地说，具有优异的冲击强度，表面光泽度和美丽的颜色以及高水平的硬度和耐划伤性的热塑性树脂，其包括）通过共轭二烯橡胶胶乳与（甲基）丙烯酸烷基酯化合物，芳族乙烯基化合物和乙烯基青色化合物的聚合制备的主接枝共聚物; 和b）通过（甲基）丙烯酸烷基酯化合物与芳族乙烯基化合物和乙烯基青色化合物的聚合制备的二级共聚物。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式