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    • 3. 发明授权
    • Trench capacitors with insulating layer collars in undercut regions
    • 带有绝缘层的沟槽电容器在底切区域
    • US07531861B2
    • 2009-05-12
    • US12033065
    • 2008-02-19
    • Suk-jin ChungSeung-hwan LeeSung-tae KimYoung-sun KimJae-soon LimYoung-geun Park
    • Suk-jin ChungSeung-hwan LeeSung-tae KimYoung-sun KimJae-soon LimYoung-geun Park
    • H01L29/94
    • H01L27/10867H01L27/10829H01L27/1087H01L29/66181H01L29/945
    • Trench capacitors that have insulating layer collars in undercut regions and methods of fabricating such trench capacitors are provided. Some methods of fabricating a trench capacitor include forming a first layer on a substrate. A second layer is formed on the first layer opposite to the substrate. A mask is formed that has an opening on top of the first and second layers. A first trench is formed by removing a portion of the first and second layers through the opening in the mask. A portion of the first layer under the second layer is removed to form an undercut region under the second layer. An insulating layer collar is formed in the undercut region under the second layer. A second trench is formed that extends from the first trench by removing a portion of the substrate through the opening in the mask. A buried plate is formed in the substrate along the second trench. A dielectric layer is formed on an inner wall and bottom of the second trench. A storage electrode is formed in the second trench on the dielectric layer.
    • 提供了在底切区域中具有绝缘层套环的沟槽电容器和制造这种沟槽电容器的方法。 制造沟槽电容器的一些方法包括在衬底上形成第一层。 在与衬底相对的第一层上形成第二层。 形成在第一和第二层的顶部上具有开口的掩模。 通过从掩模中的开口去除第一层和第二层的一部分来形成第一沟槽。 除去第二层下面的第一层的一部分,以在第二层下形成底切区域。 在第二层下方的底切区域中形成绝缘层套环。 形成第二沟槽,其通过从掩模中的开口去除衬底的一部分而从第一沟槽延伸。 掩埋板沿着第二沟槽形成在衬底中。 介电层形成在第二沟槽的内壁和底部上。 在电介质层上的第二沟槽中形成存储电极。
    • 4. 发明申请
    • TRENCH CAPACITORS WITH INSULATING LAYER COLLARS IN UNDERCUT REGIONS
    • 在内陆地区具有绝缘层的TRENCH电容器
    • US20080135876A1
    • 2008-06-12
    • US12033065
    • 2008-02-19
    • Suk-jin ChungSeung-hwan LeeSung-tae KimYoung-sun KimJae-soon LimYoung-geun Park
    • Suk-jin ChungSeung-hwan LeeSung-tae KimYoung-sun KimJae-soon LimYoung-geun Park
    • H01L29/94
    • H01L27/10867H01L27/10829H01L27/1087H01L29/66181H01L29/945
    • Trench capacitors that have insulating layer collars in undercut regions and methods of fabricating such trench capacitors are provided. Some methods of fabricating a trench capacitor include forming a first layer on a substrate. A second layer is formed on the first layer opposite to the substrate. A mask is formed that has an opening on top of the first and second layers. A first trench is formed by removing a portion of the first and second layers through the opening in the mask. A portion of the first layer under the second layer is removed to form an undercut region under the second layer. An insulating layer collar is formed in the undercut region under the second layer. A second trench is formed that extends from the first trench by removing a portion of the substrate through the opening in the mask. A buried plate is formed in the substrate along the second trench. A dielectric layer is formed on an inner wall and bottom of the second trench. A storage electrode is formed in the second trench on the dielectric layer.
    • 提供了在底切区域中具有绝缘层套环的沟槽电容器和制造这种沟槽电容器的方法。 制造沟槽电容器的一些方法包括在衬底上形成第一层。 在与衬底相对的第一层上形成第二层。 形成在第一和第二层的顶部上具有开口的掩模。 通过从掩模中的开口去除第一层和第二层的一部分来形成第一沟槽。 除去第二层下面的第一层的一部分,以在第二层下形成底切区域。 在第二层下方的底切区域中形成绝缘层套环。 形成第二沟槽,其通过从掩模中的开口去除衬底的一部分而从第一沟槽延伸。 掩埋板沿着第二沟槽形成在衬底中。 介电层形成在第二沟槽的内壁和底部上。 在电介质层上的第二沟槽中形成存储电极。
    • 5. 发明授权
    • Methods of fabricating trench capacitors with insulating layer collars in undercut regions
    • 在底切区域制造具有绝缘层环的沟槽电容器的方法
    • US07354821B2
    • 2008-04-08
    • US11037626
    • 2005-01-18
    • Suk-jin ChungSeung-hwan LeeSung-tae KimYoung-sun KimJae-soon LimYoung-geun Park
    • Suk-jin ChungSeung-hwan LeeSung-tae KimYoung-sun KimJae-soon LimYoung-geun Park
    • H01L21/8242H01L21/336
    • H01L27/10867H01L27/10829H01L27/1087H01L29/66181H01L29/945
    • Trench capacitors that have insulating layer collars in undercut regions and methods of fabricating such trench capacitors are provided. Some methods of fabricating a trench capacitor include forming a first layer on a substrate. A second layer is formed on the first layer opposite to the substrate. A mask is formed that has an opening on top of the first and second layers. A first trench is formed by removing a portion of the first and second layers through the opening in the mask. A portion of the first layer under the second layer is removed to form an undercut region under the second layer. An insulating layer collar is formed in the undercut region under the second layer. A second trench is formed that extends from the first trench by removing a portion of the substrate through the opening in the mask. A buried plate is formed in the substrate along the second trench. A dielectric layer is formed on an inner wall and bottom of the second trench. A storage electrode is formed in the second trench on the dielectric layer.
    • 提供了在底切区域中具有绝缘层套环的沟槽电容器和制造这种沟槽电容器的方法。 制造沟槽电容器的一些方法包括在衬底上形成第一层。 在与衬底相对的第一层上形成第二层。 形成在第一和第二层的顶部上具有开口的掩模。 通过从掩模中的开口去除第一层和第二层的一部分来形成第一沟槽。 除去第二层下面的第一层的一部分,以在第二层下形成底切区域。 在第二层下方的底切区域中形成绝缘层套环。 形成第二沟槽,其通过从掩模中的开口去除衬底的一部分而从第一沟槽延伸。 掩埋板沿着第二沟槽形成在衬底中。 介电层形成在第二沟槽的内壁和底部上。 在电介质层上的第二沟槽中形成存储电极。