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1. 发明授权

US4861290A Aluminum electrical connector with threaded opening having electroplated layer of uniform thickness 失效
标题翻译：具有螺纹开口的铝电连接器具有均匀厚度的电镀层
公开(公告)号：US4861290A
公开(公告)日：1989-08-29
申请号：US130738
申请日：1987-12-09
申请人： Terrence R. Halmstad , Steven R. Schachameyer
发明人： Terrence R. Halmstad , Steven R. Schachameyer
IPC分类号： H01R4/30 , H01R4/36
CPC分类号： H01R4/36 , H01R4/307
摘要： An aluminum electrical connector lug (2) has a lug body (4) with a threaded opening (12) having an electroplated coating layer (22) with substantially the same thickness at the roots (16) as at the crowns (18).
摘要翻译：铝电连接器凸耳（2）具有带有螺纹开口（12）的凸耳本体（4），所述螺纹开口（12）具有电镀涂层（22），所述电镀涂层在根部（16）处具有与冠部18处的基本相同的厚度。

2. 发明授权

US06377052B1 Monitoring fluid condition through an aperture 失效
标题翻译：通过孔监测流体状况
公开(公告)号：US06377052B1
公开(公告)日：2002-04-23
申请号：US09433495
申请日：1999-11-03
申请人： Peter J. McGinnis , Paul G. Rops , Mark H. Polczynski , Francis C. Edrozo , Richard W. Hirthe , Steven R. Schachameyer , Lian Q. Zou
发明人： Peter J. McGinnis , Paul G. Rops , Mark H. Polczynski , Francis C. Edrozo , Richard W. Hirthe , Steven R. Schachameyer , Lian Q. Zou
IPC分类号： G02N2702
CPC分类号： G01N27/07 , G01N27/02 , G01N33/2888
摘要： A method for real time monitoring fluid in a vessel with a probe having a pair of electrodes immersed in the fluid. The disclosed probe has the electrodes arranged helically on a rod, sized and configured for insertion in an engine dipstick hole. Preferably, the probe has spiral electrode winding up regions different pitch to provide improved impedance response at low fractional Hertz and high (at least one Hertz) frequencies of excitation. In one version with alternating voltage the difference in current magnitude measured at the low and high frequencies is compared with stored known values for known fluid conditions and an electrical signal indicative of fluid condition is generated. Examples with engine drain oil and heavy duty transmission lubricant fluid are presented. The impedance properties measured can determine the percentage remaining useful life (RUL) of the fluid. In another version of the method the current phase shift angle is measured at the fractional Hertzian frequency; and, from known values of current phase shift angle of the fluid, at various conditions, the condition of the fluid determined. The differential current measured and the measured phase shift angle may be combined, for example, by the square of the sum of the squares procedure to provide an enhanced impedance change indicator.
摘要翻译：一种用于具有探针的血管中的实时监测流体的方法，所述探针具有浸在流体中的一对电极。所公开的探针具有螺旋地布置在杆上的电极，其尺寸和构造用于插入发动机量油尺孔中。优选地，探针具有不同间距的螺旋电极卷绕区域，以在低分数赫兹和高（至少一赫兹）激发频率下提供改进的阻抗响应。在具有交流电压的一个版本中，在低频和高频测量的电流幅度差与已知流体条件的已知已知值进行比较，并且产生指示流体状态的电信号。介绍了发动机排放油和重型变速器润滑油的实例。测量的阻抗特性可以确定流体的剩余使用寿命（RUL）百分比。在该方法的另一个版本中，当前相移角以分数赫兹频率测量; 并且根据流体的当前相移角的已知值，在各种条件下，确定流体的状态。测量的差动电流和测量的相移角可以例如通过平方和的程序的平方相加来提供增强的阻抗变化指示器。

3. 发明授权

US4668304A Dopant gettering semiconductor processing by excimer laser 失效
标题翻译：通过准分子激光掺杂吸收半导体加工
公开(公告)号：US4668304A
公开(公告)日：1987-05-26
申请号：US721552
申请日：1985-04-10
申请人： Steven R. Schachameyer , James A. Benjamin , John B. Pardee , Lyle O. Hoppie , Herman P. Schutten
发明人： Steven R. Schachameyer , James A. Benjamin , John B. Pardee , Lyle O. Hoppie , Herman P. Schutten
IPC分类号： H01L21/223 , H01L21/268 , H01L21/322 , H01L21/265
CPC分类号： H01L21/3221 , H01L21/223 , H01L21/268 , Y10S148/06 , Y10S148/093
摘要： A dopant gettering semiconductor processing technique is disclosed for selectively activating an otherwise benign reactant to remove dopant from a semiconductor wafer substrate. Excimer pulsed ultraviolet laser radiation is provided at a discrete designated pulsed wavelength corresponding to a discrete designated gettering excitation energy of the otherwise benign reactant photochemically breaking bonds of the reactant such that the reactant is photolytically activated to remove dopant from the substrate, without thermally driven pyrolytic reaction. The bonds of a reactant gas are photochemically broken to produce gettering agents reacting with the substrate to remove dopant by forming a gaseous compound liberated from the substrate and benign to and unactivated by the discrete designated wavelength of the excimer pulsed ultraviolet laser radiation.
摘要翻译：公开了掺杂剂吸杂半导体处理技术，用于选择性地激活另外良性的反应物以从半导体晶片衬底去除掺杂剂。准分子脉冲紫外激光辐射以离散指定的脉冲波长提供，对应于其他良性反应物的离散指定的吸气激发能量，其反应物光化学断裂，使得反应物被光致活化以从衬底去除掺杂剂，而不需要热驱动的热解反应。反应气体的键被光化学破坏，以产生吸收剂与衬底反应以通过形成从衬底释放的良好的准分子指定波长的准分子脉冲紫外激光辐射而未激活的气态化合物来除去掺杂剂。

4. 发明授权

US4655849A Semiconductor processing technique for generating dangling surface bonds and growing epitaxial layer by excimer laser 失效
标题翻译：用于产生悬挂表面键并通过准分子激光生长外延层的半导体加工技术
公开(公告)号：US4655849A
公开(公告)日：1987-04-07
申请号：US737223
申请日：1985-05-22
申请人： Steven R. Schachameyer , James A. Benjamin , John B. Pardee , Lyle O. Hoppie
发明人： Steven R. Schachameyer , James A. Benjamin , John B. Pardee , Lyle O. Hoppie
IPC分类号： H01L21/20 , H01L21/205 , H01L21/268 , H01L21/265 , B05D5/12
CPC分类号： H01L21/268 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02636 , Y10S117/904 , Y10S148/093 , Y10S438/974
摘要： A semiconductor processing technique is disclosed for reasonantly reacting with a semiconductor wafer substrate and cleaving surface atomic bonds to create dangling bonds. The substrate is irradiated with excimer pulsed ultraviolet laser radiation at a discrete designed wavelength to resonantly photolytically cleave surface bonds and create the dangling bonds. This enhances further processing operations such as single crystalline silicon deposition and enhanced bonding and growth thereof.
摘要翻译：公开了一种半导体处理技术，用于与半导体晶片衬底有明显的反应并切割表面原子键以产生悬挂键。用分立设计波长的准分子脉冲紫外激光辐射照射基板，以共振光解裂解表面键并产生悬挂键。这增强了进一步的处理操作，例如单晶硅沉积和增强的结合和生长。

5. 发明授权

US5271823A Method of making a trivalent chromium plated engine valve 失效
标题翻译：制造三价镀铬发动机阀的方法
公开(公告)号：US5271823A
公开(公告)日：1993-12-21
申请号：US899966
申请日：1992-06-17
申请人： Steven R. Schachameyer , Paul A. Bujalski , Sundaram L. Narasimhan
发明人： Steven R. Schachameyer , Paul A. Bujalski , Sundaram L. Narasimhan
IPC分类号： C25D5/26 , C25D3/06 , C25D5/50 , C25D7/00 , F01L3/02 , F01L3/04 , F02B3/06
CPC分类号： C25D3/06 , C25D5/50 , F01L3/04 , F02B3/06
摘要： An internal combustion engine valve (100) is provided having a stem (4) onto which a plating or coating of trivalent chromium is electrodeposited and which is then heated at a temperature of at least about 150.degree. F. for at least about 3 hours to provide a wear resistant surface that is superior to coatings of hexavalent chromium heretofor used for such purpose.

6. 发明授权

US4940505A Method for growing single crystalline silicon with intermediate bonding agent and combined thermal and photolytic activation 失效
标题翻译：用中间粘合剂生长单晶硅并结合热和光解活化的方法
公开(公告)号：US4940505A
公开(公告)日：1990-07-10
申请号：US279566
申请日：1988-12-02
申请人： Steven R. Schachameyer , Mark W. Beranek
发明人： Steven R. Schachameyer , Mark W. Beranek
IPC分类号： H01L21/205 , H01L21/306
CPC分类号： H01L21/02046 , H01L21/02049 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02658 , Y10S117/904 , Y10S148/017 , Y10S148/048 , Y10S438/974
摘要： A method is provided for epitaxially growing single crystalline silicon on a silicon substrate (10) from a silicon-bearing gas (26) at a temperature below the pyrolytic threshold of the gas and at temperatures below those normally required for epitaxial growth. An oxidized silicon substrate (10) is fluorinated (equation 2, FIG. 2) to replace the silicon-oxide layer with an adsorbed fluorinated layer. The substrate is placed in a laser photo-CVD reactor chamber (20), the chamber is evacuated to a sub-UHV level of 10.sup.-3 to 10.sup.-7 Torr, the substrate is heated to 570.degree. C., hydrogen gas (24) is introduced into the chamber, and excimer pulsed ultraviolet laser radiation (32 from laser 12) is applied through the hydrogen gas to impinge the wafer substrate. The combined effect removes regrown native oxide and removes the adsorbed fluorinated layer and breaks the hydrogen into atomic hydrogen such that the latter bonds with the silicon in the substrate and replaces the adsorbed fluorinated layer with silicon-hydrogen bonds (equation 4, FIG. 2). The substrate is maintained at 570.degree. C. and disilane is introduced into the chamber, and excimer pulsed ultraviolet laser radiation is applied through the disilane gas to impinge the wafer substrate. The combined effect breaks the silicon-hydrogen bond and decomposes the disilane to silane and an unstable intermediate SiH.sub.z which decomposes to hydrogen and atomic silicon (equation 5, FIG. 2), which atomic silicon bonds to the now unbonded silicon in the substrate to epitaxially grow single crystalline silicon.
摘要翻译：提供了一种用于在低于气体的热解阈值的温度下并且低于通常外延生长所需温度的温度从含硅气体（26）在硅衬底（10）上外延生长单晶硅的方法。氟化氧化硅衬底（10）（等式2，图2）以用吸附的氟化层代替氧化硅层。将基板放置在激光光CVD反应器室（20）中，将室抽真空至10-3至10-7乇的亚UHV水平，将基板加热至570℃，加入氢气（24 ）引入室中，并且通过氢气施加准分子脉冲紫外激光辐射（来自激光器12的32）以冲击晶片衬底。组合效应除去再生长的自然氧化物并除去吸附的氟化层并将氢分解成原子氢，使得后者与衬底中的硅结合并用硅 - 氢键取代吸附的氟化层（方程式4，图2）。将基板保持在570℃，并将乙硅烷引入室中，并通过乙硅烷气体施加准分子脉冲紫外激光辐射以冲击晶片基板。组合效应破坏硅 - 氢键并将乙硅烷分解成硅烷和分解成氢和原子硅的不稳定中间SiHH（等式5，图2），其原子硅键合到衬底中的现在未结合的硅到外延生长单晶硅。

7. 发明授权

US4428986A Method of preparing a beryllia substrate for subsequent autocatalytic deposition of a metallized film directly thereon 失效
标题翻译：制备用于随后自动催化沉积金属化膜的氧化铍底物的方法
公开(公告)号：US4428986A
公开(公告)日：1984-01-31
申请号：US442556
申请日：1982-11-18
申请人： Steven R. Schachameyer
发明人： Steven R. Schachameyer
IPC分类号： C23C18/18 , H01L21/48 , H05K1/03 , H05K3/18 , H05K3/38 , B05D3/04
CPC分类号： H01L21/4807 , C23C18/1865 , C23C18/1889 , C23C18/1893 , H05K1/0306 , H05K3/181 , H05K3/381
摘要： Beryllia is prepared for direct autocatalytic plating of a metal film by immersing it first in a sodium hydroxide solution for roughening the surface uniformly, rinsing it in water, then immersing it in a fluoride-based solution for etching silica and magnesium from the grain boundaries, rinsing it in water and then plating the beryllia by conventional methods for metallizing non-conductors.
摘要翻译：通过将铍原液浸入氢氧化钠溶液中，使表面均匀地粗糙化，在水中漂洗，然后将其浸渍在从晶界上蚀刻二氧化硅和镁的氟化物类溶液中，制备了铍气体直接自催化电镀，在水中冲洗，然后通过用于金属化非导体的常规方法电镀铍。

8. 发明授权

US4685976A Multi-layer semiconductor processing with scavenging between layers by excimer laser 失效
标题翻译：多层半导体处理通过准分子激光在层间清除
公开(公告)号：US4685976A
公开(公告)日：1987-08-11
申请号：US736934
申请日：1985-05-22
申请人： Steven R. Schachameyer , James A. Benjamin , John B. Pardee , Lyle O. Hoppie
发明人： Steven R. Schachameyer , James A. Benjamin , John B. Pardee , Lyle O. Hoppie
IPC分类号： C23C16/02 , C23C16/48 , H01L21/268 , H01L21/265 , B05D5/12
CPC分类号： H01L21/268 , C23C16/0263 , C23C16/483 , Y10S117/904 , Y10S148/093 , Y10S438/906
摘要： A semiconductor processing technique is disclosed for forming a multi-layered semiconductor structure in a single chamber and with the same equipment, without removing the semiconductor wafer substrate or otherwise transferring it to another chamber. A gaseous mixture of different gases is provided in a chamber. Excimer pulsed ultraviolet laser radiation is introduced into the chamber at a first discrete wavelength to photolytically react with a first of the gases at a discrete excitation energy photochemically breaking bonds of the first gas to epitaxially deposit a first layer on the substrate, followed by radiation at a second discrete wavelength to photolytically react with a second gas to deposit a second layer on the first layer, and so on. The different gases may be introduced into the chamber collectively, or serially between radiations. Scavenging between layers is provided by photolytic removal of surface containments and the products of reaction.
摘要翻译：公开了半导体处理技术，用于在单个室和相同的设备中形成多层半导体结构，而不去除半导体晶片衬底或以其它方式将其转移到另一个室。在室中提供不同气体的气体混合物。准分子脉冲紫外激光辐射以第一离散波长被引入室中，以离散的激发能量与第一种气体光化学反应，光学化学地破坏第一气体的键，以在衬底上外延沉积第一层，随后在与第二气体光解反应以在第一层上沉积第二层的第二离散波长，等等。不同的气体可以集中地或连续地在辐射之间引入室中。通过光解除去表面容纳物和反应产物来提供层之间的清除。

9. 发明授权

US4670064A Generating high purity ions by non-thermal excimer laser processing 失效
标题翻译：通过非热准分子激光加工生成高纯度离子
公开(公告)号：US4670064A
公开(公告)日：1987-06-02
申请号：US721551
申请日：1985-04-10
申请人： Steven R. Schachameyer , James A. Benjamin , John B. Pardee , Lyle O. Hoppie
发明人： Steven R. Schachameyer , James A. Benjamin , John B. Pardee , Lyle O. Hoppie
IPC分类号： H01J27/24 , H01J37/08 , H01J37/317 , H01L21/265 , B01J1/10
CPC分类号： H01J37/3171 , H01J27/24 , H01J37/08 , Y10S148/083
摘要： A semiconductor ion implantation processing technique is disclosed for implanting high purity, high flux density ions in a semiconductor wafer substrate. A reactant gas is irradiated with excimer pulsed ultraviolet laser radiation at a discrete designated pulsed wavelength corresponding to a discrete designated ionization excitation energy of the gas photochemically breaking bonds of the gas to nonthermally photolytically ionize the gas. The ions are then accelerated by an electric field for subsequent implantation into a surface.
摘要翻译：公开了一种用于在半导体晶片衬底中注入高纯度，高通量密度离子的半导体离子注入处理技术。用对准于气体的离子指定离子化激发能量的离子指定脉冲波长的准分子脉冲紫外激光辐射照射反应气体，气体的光化学断裂键将非热电离电离气体。然后通过电场加速离子以便随后注入表面。

10. 发明授权

US4670063A Semiconductor processing technique with differentially fluxed radiation at incremental thicknesses 失效
标题翻译：半导体处理技术具有渐变厚度的差分放大
公开(公告)号：US4670063A
公开(公告)日：1987-06-02
申请号：US721553
申请日：1985-04-10
申请人： Steven R. Schachameyer , James A. Benjamin , John B. Pardee , Lyle O. Hoppie
发明人： Steven R. Schachameyer , James A. Benjamin , John B. Pardee , Lyle O. Hoppie
IPC分类号： H01L21/20 , H01L21/268 , H01L21/265 , B05D5/12
CPC分类号： H01L21/268 , H01L21/0262 , Y10S117/904 , Y10S148/093
摘要： A semiconductor processing technique is disclosed for periodically selectively effecting lattice ordering and dopant distribution during a semiconductor layer formation process. Excimer pulsed ultraviolet laser radiation is provided at different energy fluxes to provide an electrically active layer as formed, without post-annealing, and curing lattice damage otherwise due to certain processing methods such as ion implantation. In a photolytic deposition technique, excimer laser radiation is periodically increased to transiently provide a pyrolytic thermal reaction in the layer as thus far deposited to provide a plurality of short intermittent periodic annealing steps to ensure crystallization as the layer continues to be deposited at lower radiation energy fluxes. Single crystalline material may be formed without post-annealing by periodically irradiating incremental thicknesses of the layer as formed.
摘要翻译：公开了半导体处理技术，用于在半导体层形成过程期间周期性地选择性地实现晶格排序和掺杂剂分布。在不同能量通量下提供准分子脉冲紫外激光辐射以提供形成的电活性层，而不需要后退火，并且由于诸如离子注入的某些加工方法而固化晶格损伤。在光解沉积技术中，准分子激光辐射被周期性地增加以在层中短暂地提供热解热反应，由此被沉积以提供多个短的间歇性周期性退火步骤，以确保随着该层继续以较低的辐射能量沉积助焊剂可以通过周期性地照射形成的层的增量厚度来形成单晶材料而不进行后退火。

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