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    • 3. 发明申请
    • LED ARRAY
    • LED阵列
    • US20090103297A1
    • 2009-04-23
    • US11816951
    • 2006-02-06
    • Georg BognerMoritz EnglStefan GrotschPatrick KromotisJorg Erich Sorg
    • Georg BognerMoritz EnglStefan GrotschPatrick KromotisJorg Erich Sorg
    • F21V33/00
    • H01L33/62H01L25/0753H01L33/42H01L33/505H01L33/507H01L2924/0002H01L2924/00
    • In an LED array comprising a plurality of radiation-emitting semiconductor chips each of which has a radiation outcoupling surface, the radiation emitted by the semiconductor chips being outcoupled substantially through said radiation outcoupling surface , and a cover body that is transparent to the emitted radiation, the transparent cover body comprises, on a surface facing toward the radiation outcoupling surfaces of the semiconductor chips, one or more conductive traces made of a conductive material that is transparent to the emitted radiation, and the semiconductor chips each comprise, on the radiation outcoupling surface, at least one electrical contact that is connected to the conductive trace or to at least one of the plurality of conductive traces. At least one luminescence conversion material is contained in the transparent cover body and/or applied in a layer to the cover body and/or the semiconductor chips.
    • 在包括多个具有辐射输出耦合表面的多个辐射发射半导体芯片的LED阵列中,由半导体芯片发射的辐射基本上通过所述辐射输出耦合表面耦合,以及对所发射的辐射透明的盖体, 透明盖体在面向半导体芯片的辐射输出耦合表面的表面上包括由对所发射的辐射透明的导电材料制成的一个或多个导电迹线,并且半导体芯片各自包括在辐射输出耦合表面 ,至少一个电触点,其连接到所述导电迹线或所述多个导电迹线中的至少一个。 至少一个发光转换材料被包含在透明盖体中和/或被涂覆到覆盖体和/或半导体芯片的层中。
    • 10. 发明申请
    • Method for producing a luminescence diode chip
    • 发光二极管芯片的制造方法
    • US20050148110A1
    • 2005-07-07
    • US10979359
    • 2004-11-01
    • Hubert OttStefan GrotschHerbert Brunner
    • Hubert OttStefan GrotschHerbert Brunner
    • G21K4/00H01L21/00H01L33/50H01L33/58
    • H01L33/58H01L33/507H01L2224/48091H01L2924/00014
    • A method for producing a luminescence diode chip, in which provision is made of a semiconductor body is provided having an epitaxially grown semiconductor layer sequence having an active zone and a radiation coupling-out area, the active zone emitting an electromagnetic radiation during operation of the luminescence diode, a large part of said electromagnetic radiation being coupled out via the radiation coupling-out area. A luminescence conversion material is arranged downstream of the radiation coupling-out area in an emission direction of the semiconductor body. A radiation-transmissive covering body having a first main area, a second main area opposite to the first main area, and also side areas connecting the first and second main areas. The covering body is applied to the radiation coupling-out area of the semiconductor layer sequence in such a way that the first main area faces the radiation coupling-out area. The application of the covering body is preceded by the application of a first conversion layer, having a luminescence conversion material, to the first main area of the covering body.
    • 提供一种制造发光二极管芯片的方法,其中提供具有半导体本体的外延生长的半导体层序列,其具有有源区和辐射耦合区,所述有源区在操作期间发射电磁辐射 发光二极管,所述电磁辐射的大部分经由辐射耦合输出区被耦合输出。 发光转换材料被布置在半导体本体的发射方向上的辐射耦合输出区域的下游。 具有第一主区域,与第一主区域相对的第二主区域以及连接第一主区域和第二主区域的侧面区域的辐射透射覆盖体。 将覆盖体施加到半导体层序列的辐射耦合出区域,使得第一主区域面向辐射耦合输出区域。 覆盖体的应用之前是将具有发光转换材料的第一转换层应用于覆盖体的第一主区域。