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    • 1. 发明申请
    • Method for producing a luminescence diode chip
    • 发光二极管芯片的制造方法
    • US20050148110A1
    • 2005-07-07
    • US10979359
    • 2004-11-01
    • Hubert OttStefan GrotschHerbert Brunner
    • Hubert OttStefan GrotschHerbert Brunner
    • G21K4/00H01L21/00H01L33/50H01L33/58
    • H01L33/58H01L33/507H01L2224/48091H01L2924/00014
    • A method for producing a luminescence diode chip, in which provision is made of a semiconductor body is provided having an epitaxially grown semiconductor layer sequence having an active zone and a radiation coupling-out area, the active zone emitting an electromagnetic radiation during operation of the luminescence diode, a large part of said electromagnetic radiation being coupled out via the radiation coupling-out area. A luminescence conversion material is arranged downstream of the radiation coupling-out area in an emission direction of the semiconductor body. A radiation-transmissive covering body having a first main area, a second main area opposite to the first main area, and also side areas connecting the first and second main areas. The covering body is applied to the radiation coupling-out area of the semiconductor layer sequence in such a way that the first main area faces the radiation coupling-out area. The application of the covering body is preceded by the application of a first conversion layer, having a luminescence conversion material, to the first main area of the covering body.
    • 提供一种制造发光二极管芯片的方法,其中提供具有半导体本体的外延生长的半导体层序列,其具有有源区和辐射耦合区,所述有源区在操作期间发射电磁辐射 发光二极管,所述电磁辐射的大部分经由辐射耦合输出区被耦合输出。 发光转换材料被布置在半导体本体的发射方向上的辐射耦合输出区域的下游。 具有第一主区域,与第一主区域相对的第二主区域以及连接第一主区域和第二主区域的侧面区域的辐射透射覆盖体。 将覆盖体施加到半导体层序列的辐射耦合出区域,使得第一主区域面向辐射耦合输出区域。 覆盖体的应用之前是将具有发光转换材料的第一转换层应用于覆盖体的第一主区域。
    • 2. 发明申请
    • Luminescence diode chip
    • 发光二极管芯片
    • US20050151141A1
    • 2005-07-14
    • US10978759
    • 2004-11-01
    • Stefan GrotschHerbert BrunnerHubert Ott
    • Stefan GrotschHerbert BrunnerHubert Ott
    • H01L33/50H01L33/58H01L27/15
    • H01L33/50H01L33/58H01L2224/48463
    • A luminescence diode chip with a semiconductor body having an epitaxially grown semiconductor layer sequence with an active zone and a radiation coupling-out area, the active zone emitting an electromagnetic radiation during operation of the luminescence diode chip, which electromagnetic radiation, at least in part, is coupled out via the radiation coupling-out area. The luminescence diode chip has a radiation-transmissive covering body that is arranged downstream of the radiation coupling-out area in an emission direction of the luminescence diode chip and has a first main surface facing the radiation coupling-out area, a second main surface remote from the radiation coupling-out area, and also side faces connecting the first and second main areas. A connecting layer is arranged between the radiation coupling-out area and the covering body, which connecting layer directly connects the covering body to the semiconductor layer sequence and fixes it thereto and has at least one conversion layer with a luminescence conversion material.
    • 一种具有半导体本体的发光二极管芯片,具有具有活性区域和辐射耦合区域的外延生长的半导体层序列,所述有源区域在发光二极管芯片的操作期间发射电磁辐射,该电磁辐射至少部分地 通过辐射耦合输出区域耦合出来。 所述发光二极管芯片具有辐射透射性覆盖体,其在所述发光二极管芯片的发射方向上配置在所述辐射耦合出区域的下游,并且具有面向所述辐射耦合输出区域的第一主表面, 从辐射耦合输出区域,以及连接第一和第二主要区域的侧面。 连接层布置在辐射耦合输出区域和覆盖体之间,该连接层将覆盖体直接连接到半导体层序列并将其固定到其上,并具有至少一个具有发光转换材料的转换层。
    • 3. 发明授权
    • Method for producing a luminescence diode chip
    • 发光二极管芯片的制造方法
    • US07510890B2
    • 2009-03-31
    • US10979359
    • 2004-11-01
    • Hubert OttStefan GrötschHerbert Brunner
    • Hubert OttStefan GrötschHerbert Brunner
    • H01L21/00
    • H01L33/58H01L33/507H01L2224/48091H01L2924/00014
    • A method for producing a luminescence diode chip, in which provision is made of a semiconductor body is provided having an epitaxially grown semiconductor layer sequence having an active zone and a radiation coupling-out area, the active zone emitting an electromagnetic radiation during operation of the luminescence diode, a large part of said electromagnetic radiation being coupled out via the radiation coupling-out area. A luminescence conversion material is arranged downstream of the radiation coupling-out area in an emission direction of the semiconductor body. A radiation-transmissive covering body having a first main area, a second main area opposite to the first main area, and also side areas connecting the first and second main areas. The covering body is applied to the radiation coupling-out area of the semiconductor layer sequence in such a way that the first main area faces the radiation coupling-out area. The application of the covering body is preceded by the application of a first conversion layer, having a luminescence conversion material, to the first main area of the covering body.
    • 提供一种制造发光二极管芯片的方法,其中提供具有半导体本体的外延生长的半导体层序列,其具有活性区和辐射耦合区域,所述有源区域在操作期间发射电磁辐射 发光二极管,所述电磁辐射的大部分经由辐射耦合输出区被耦合输出。 发光转换材料被布置在半导体本体的发射方向上的辐射耦合输出区域的下游。 具有第一主区域,与第一主区域相对的第二主区域以及连接第一主区域和第二主区域的侧面区域的辐射透射覆盖体。 将覆盖体施加到半导体层序列的辐射耦合出区域,使得第一主区域面向辐射耦合输出区域。 覆盖体的应用之前是将具有发光转换材料的第一转换层应用于覆盖体的第一主区域。
    • 8. 发明申请
    • Phased Array Transmitting Antenna
    • 相控阵发射天线
    • US20080211717A1
    • 2008-09-04
    • US11951733
    • 2007-12-06
    • Markus BoeckHubert OttHelmut Dreher
    • Markus BoeckHubert OttHelmut Dreher
    • H01Q3/00
    • H01Q3/38
    • An arrangement for beam forming and control of a transmitter radiating in the RF range comprises an input for feeding the RF transmitting signal RFin, a feeding network electrically connected with the input, a plurality of radiator elements, a plurality of phase shifters for receiving signals from the feeding network and for causing phase displacements for the signals before the transmission to the radiator elements, and a controller for controlling the phase displacement caused by the phase shifters. A circuit is assigned to the input of the transmitting antenna for converting the momentary phase of the transmitting signal to a digital word of a definable word length and for feeding the digital momentary phase to the feeding network. Each phase shifter comprises an adder for linking the momentary phase fed by the feeding network with a definable digital phase value generated and fed by the controller, and a circuit for converting the digital output value of the adder to an analog signal. The controller has a set of outputs which are connected with the phase shifters by way of a corresponding set of connection lines, before the transmission to the phase shifters. A definable gradient is superposed on the phase values for generating a phase difference between the phase values at the outputs of the controller.
    • 用于在RF范围内发射的发射机的波束形成和控制的装置包括用于馈送中的RF发射信号RF 的输入,与输入电连接的馈电网络,多个散热器元件, 多个移相器,用于接收来自馈电网络的信号,并且用于在传输到散热器元件之前引起信号的相位偏移;以及控制器,用于控制由移相器引起的相位偏移。 电路被分配给发射天线的输入,用于将发射信号的瞬时相位转换成可定义字长的数字字,并将数字瞬时相馈送到馈电网络。 每个移相器包括一个加法器,用于将由馈电网络馈送的瞬时相位与由控制器产生和馈送的可定义的数字相位值相关联,以及用于将加法器的数字输出值转换为模拟信号的电路。 该控制器具有一组输出,在输出到移相器之前,通过相应的一组连接线与移相器相连。 在相位值上叠加可定义的梯度,以产生控制器输出端的相位值之间的相位差。