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    • 1. 发明授权
    • Substrate liquid processing apparatus
    • 基板液体处理装置
    • US09484230B2
    • 2016-11-01
    • US13151610
    • 2011-06-02
    • Nobuhiro OgataShuichi Nagamine
    • Nobuhiro OgataShuichi Nagamine
    • B08B3/00H01L21/00H01L21/67
    • H01L21/67051
    • A substrate liquid processing apparatus of the present invention includes a process-liquid supply unit selectively supplying a plurality of types of process-liquids to the substrate held by a substrate holding table, first and second guide cups which are disposed in this order from the top and are configured to respectively guide downward the process-liquid scattering from the rotating substrate while being held by the substrate holding table; and a position adjustment mechanism adjusting a positional relationship between the first and second guide cups and the substrate holding table. A first process-liquid recovery tank is provided at a lower area of the first and second guide cups and recovers the process-liquid guided by the first guide cup. A second process-liquid recovery tank is provided at the inner peripheral side of the first process-liquid recovery tank and recovers the process-liquid guided by the second guide cup.
    • 本发明的基板液体处理装置包括:处理液供给单元,其选择性地将多种类型的处理液供给到由基板保持台保持的基板;第一和第二引导杯,从顶部 并且被配置为在由基板保持台保持的同时分别引导来自旋转基板的处理液体飞散; 以及位置调节机构,其调节所述第一和第二引导杯与所述基板保持台之间的位置关系。 第一处理液回收罐设置在第一和第二引导杯的下部区域,并且回收由第一引导杯引导的处理液体。 第二处理液回收罐设置在第一处理液回收罐的内周侧,并回收由第二引导杯引导的处理液。
    • 2. 发明授权
    • Substrate liquid cleaning apparatus with controlled liquid port ejection angle
    • 具有受控液体端口喷射角度的底物液体清洗装置
    • US09022045B2
    • 2015-05-05
    • US13337547
    • 2011-12-27
    • Jiro HigashijimaNobuhiro OgataSatoshi KanekoShuichi NagamineYoshihiro Kai
    • Jiro HigashijimaNobuhiro OgataSatoshi KanekoShuichi NagamineYoshihiro Kai
    • H01L21/67H01L21/687
    • H01L21/67051H01L21/68728H01L21/68785H01L21/68792
    • Disclosed is a liquid treatment apparatus including a nozzle positioned below the substrate retained by a substrate retaining unit. The nozzle is capable of ejecting two fluids of a mixture of a liquid and a gas. The nozzle includes a plurality of liquid-ejecting passages for ejecting a liquid and a plurality of gas-ejecting passages for ejecting a gas, and also includes a plurality of liquid-ejecting ports each corresponding to one of the liquid-ejecting passages. The liquid-ejecting ports are arrayed on a horizontal line extending inwardly from a position below a peripheral portion of the substrate. The liquid-ejecting ports are configured to eject the liquid towards the lower surface of the substrate in an ejecting direction, and the ejecting direction is inclined at an inclination angle in a rotating direction of the substrate rotated by rotational driving unit with respect to a plane including the lower surface of the substrate.
    • 公开了一种液体处理装置,其包括位于基板保持单元保持的基板下方的喷嘴。 喷嘴能够喷射液体和气体的混合物的两种流体。 喷嘴包括用于喷射液体的多个喷液通道和用于喷射气体的多个气体喷射通道,并且还包括各自对应于一个喷液通道的多个液体喷射口。 液体喷射口排列在从基板的周边部分下方的位置向内延伸的水平线上。 液体喷射口被配置为沿喷射方向朝向基板的下表面喷射液体,并且喷射方向以相对于平面旋转的旋转驱动单元旋转的基板的旋转方向以倾斜角度倾斜 包括基底的下表面。
    • 4. 发明申请
    • LIQUID PROCESSING APPARATUS, LIQUID PROCESSING METHOD AND STORAGE MEDIUM
    • 液体加工设备,液体加工方法和储存介质
    • US20100040779A1
    • 2010-02-18
    • US12540219
    • 2009-08-12
    • Shuichi NAGAMINENaofumi KISHITASatoshi BIWAKouji FUJIMURA
    • Shuichi NAGAMINENaofumi KISHITASatoshi BIWAKouji FUJIMURA
    • B05D5/00B05C11/00
    • H01L21/67051G03F7/162G03F7/3021H01L21/6715H01L21/67178
    • Disclosed is a liquid processing apparatus capable of increasing the number of arranged substrate retainers without increasing the total exhaust amount of the liquid processing apparatus. A N-number (N is an integer identical to or greater than three) of cup bodies are inhaled and exhausted in total exhaust amount E through a plurality of separate exhaustion passage each having a first damper, and through a common exhaustion passage connected in common downstream of the separate exhaustion passages. The first dampers are configured such that an external air is received from the cup body in a first intake amount of external air E1 for one of the cup bodies where a chemical liquid nozzle is placed at a setting location facing a wafer, and an external air is received from each of the other cup bodies in a second intake amount of external air E2 less than the first amount E1 and the intake amount of external air from both each of the other cup bodies and each of branched passages equals (E−E1)/(n−1).
    • 公开了一种液体处理装置,其能够增加布置的基板保持件的数量,而不增加液体处理装置的总排气量。 通过具有第一阻尼器的多个分开的排气通道,并且通过共同连接的共同的排气通道吸入并排出具有总排气量E的杯体的N数(N是等于或大于3的整数) 在分开的排气通道的下游。 第一阻尼器构造成使得外部空气从杯体中以第一吸入量的外部空气E1接收,用于杯形体之一,其中化学液体喷嘴位于面向晶片的设置位置处,并且外部空气 从每个其他杯体的第二吸入量小于第一量E1的外部空气E2和来自两个其他杯体和每个分支通道的外部空气的吸入量等于(E-E1) /(n-1)。
    • 5. 发明授权
    • Solution processing apparatus and method
    • 解决方案处理装置和方法
    • US06514570B1
    • 2003-02-04
    • US09678705
    • 2000-10-03
    • Yuji MatsuyamaShuichi Nagamine
    • Yuji MatsuyamaShuichi Nagamine
    • B05D102
    • H01L21/6715B05D1/005G03F7/162G03F7/3021
    • A solution separation ring made of a material with adhesion to a processing solution stronger than that of a rear face of a wafer is provided to surround the periphery of a substrate horizontally held by a spin chuck with a slight clearance therebetween. A supply nozzle is moved from one end side to the other end side of the substrate while supplying the processing solution, and discharge ports of the supply nozzle are allowed to get closer to a summit portion of the solution separation ring near the other end side of the substrate. At this time, the processing solutions on the discharge ports and the front face of the substrate which are contiguous with each other by surface tension are separated caused so as to flow toward the solution separation ring side, thereby preventing an excessive processing solution from returning onto the front face of the substrate.
    • 提供一种由粘合到比晶片背面强度更高的处理液的材料制成的溶液分离环,以围绕由旋转卡盘水平保持的基板的周边,其间具有微小的间隙。 在供给处理液的同时,供给喷嘴从基板的一端侧向另一端侧移动,允许供给喷嘴的排出口靠近靠近另一端侧的溶液分离环的顶端部 底物。 此时,通过表面张力彼此邻接的排出口和基板的前表面上的处理溶液被分离,以便朝向溶液分离环侧流动,从而防止过量的处理溶液返回到 基板的正面。
    • 6. 发明申请
    • SUBSTRATE LIQUID PROCESSING APPARATUS
    • 基板液体加工设备
    • US20120153044A1
    • 2012-06-21
    • US13151665
    • 2011-06-02
    • Nobuhiro OgataShuichi Nagamine
    • Nobuhiro OgataShuichi Nagamine
    • B05B3/02
    • H01L21/67051H01L21/6708
    • A substrate liquid processing apparatus of the present invention includes a guide rotary cup configured to guide a process-liquid scattering from a substrate rotating and being held by a substrate holding table and a guide cup configured to guide downward the process-liquid guided by the guide rotary cup. The guide cup includes a downward extension portion extending downward from an inner peripheral end portion of a guide cup body and an inner peripheral extension portion extending inward from the inner peripheral end portion more than the downward extension portion. The inner peripheral extension portion is configured to form a gas guide space together with the guide rotary cup and the downward extension portion so that a gas turning by the rotation of the guide rotary cup can be guided downward.
    • 本发明的基板液体处理装置包括:引导旋转杯,其构造成引导来自旋转并由基板保持台保持的基板的处理液体散射;以及引导杯,其构造成向下引导由引导件引导的处理液 旋转杯 引导杯包括从引导杯体的内周端部向下延伸的向下延伸部分和从内周端部向内延伸的内延伸部分,而不是向下延伸部分。 内周延伸部构造成与导向旋转杯和向下延伸部一起形成气体导向空间,从而可以将导向旋转杯的旋转转动的气体向下引导。
    • 8. 发明授权
    • Film forming method and film forming apparatus
    • 成膜方法和成膜装置
    • US06730599B2
    • 2004-05-04
    • US10339396
    • 2003-01-10
    • Hiroichi InadaShuichi Nagamine
    • Hiroichi InadaShuichi Nagamine
    • H01L2144
    • H01L21/6715G03F7/162H01L21/67109
    • The present invention is a film forming method of forming a film of a treatment solution on the front face of a substrate in a treatment chamber including the steps of: supplying the treatment solution to the substrate mounted on a holding member in the treatment chamber in states of gas being supplied into the treatment chamber and of an atmosphere in the treatment chamber being exhausted; and measuring the temperature of the front face of the substrate before the supply of the treatment solution. The measurement of the temperature of the front face of the substrate before the supply of the treatment solution enables the check of the temperature of the front face of the substrate and the temperature distribution. Then, the measured result is compared with a previously obtained ideal temperature distribution for the formation of a film with a uniform thickness, thereby predicting the film thickness of the film which will be formed in the following processing. Further, the treatment film is formed after the temperature measurement and the film thickness of the treatment film is evaluated, thereby storing the data to find and set so-called optimal conditions. Consequently, the temperature or the like of the treatment solution or the like can be adjusted based on the measured results and corrected to make the film thickness uniform.
    • 本发明是一种在处理室中在基板的正面上形成处理液的膜的成膜方法,其特征在于,包括以下状态:将处理液供给到处理室内的保持部件上的状态 的气体被供应到处理室中并且处理室中的气氛被排出; 并且在供给处理溶液之前测量衬底的正面的温度。 在提供处理溶液之前对基板的正面的温度的测量使得能够检查基板的正面的温度和温度分布。 然后,将测量结果与先前获得的用于形成具有均匀厚度的膜的理想温度分布进行比较,从而预测在随后的处理中将形成的膜的膜厚度。 此外,在温度测量之后形成处理膜,并且评估处理膜的膜厚度,从而存储数据以找到并设置所谓的最佳条件。 因此,可以根据测定结果调整处理液等的温度等,进行校正,使膜厚均匀。
    • 10. 发明授权
    • Substrate processing apparatus and method
    • 基板加工装置及方法
    • US06332723B1
    • 2001-12-25
    • US09627113
    • 2000-07-27
    • Yuji MatsuyamaShuichi NagamineKoichi Asaka
    • Yuji MatsuyamaShuichi NagamineKoichi Asaka
    • G03F730
    • H01L21/6715G03F7/3021H01L21/67103Y10S134/902
    • In a state where a wafer is held by a wafer holding section and a temperature controlled liquid is discharged to a rim area on a rear face of the wafer from flow channels, a developing solution is heaped on a front face of the wafer. Thereafter, the wafer is rotated for a predetermined period of time in a state where the temperature controlled liquid is discharged to the rim area on the rear face of the wafer from the flow channels, whereby developing is performed. The wafer is heated by the wafer holding section with a large heat capacity in an area close to a center of the wafer, and a liquid film of the temperature controlled liquid is formed in the rim area of the wafer, whereby the wafer is heated. At this time, the wafer is rotated, so that the developing solution is stirred.
    • 在晶片由晶片保持部保持并且温度控制液体从流路向晶片背面的边缘区域排出的状态下,在晶片的正面上堆积显影液。 此后,在温度受控液体从流路向晶片背面的边缘区域排出的状态下,将晶片旋转预定时间,由此进行显影。 在靠近晶片的中心的区域中,晶片被晶片保持部分加热,并且在晶片的边缘区域形成温度控制液体的液膜,由此加热晶片。 此时,晶片旋转,从而搅拌显影液。