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1. 发明授权

US07781251B2 Image sensor and method for fabricating the same 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US07781251B2
公开(公告)日：2010-08-24
申请号：US11567008
申请日：2006-12-05
申请人： Jae Hyun Kang
发明人： Jae Hyun Kang
IPC分类号： H01L21/00
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14685
摘要： Embodiments relate to an image sensor and a method of fabricating the same. In embodiments, the image sensor may include a semiconductor substrate having a photo detector, and a micro-lens array including lenses for guiding light incident from an exterior toward the photo detector, wherein the micro-lens array may include a dry film resist material. The dry film resist may include a polymer having a glass transition temperature of approximately 100° C. or less, and a molecular weight of approximately 10,000 or less.
摘要翻译：实施例涉及图像传感器及其制造方法。在实施例中，图像传感器可以包括具有光电检测器的半导体衬底和包括用于引导从外部入射到光检测器的光的透镜的微透镜阵列，其中微透镜阵列可以包括干膜抗蚀剂材料。干膜抗蚀剂可以包括玻璃化转变温度为约100℃以下，分子量约为10,000以下的聚合物。

2. 发明申请

US20100055900A1 MASK AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME 有权
标题翻译：使用该方法制造半导体器件的掩模和方法
公开(公告)号：US20100055900A1
公开(公告)日：2010-03-04
申请号：US12544043
申请日：2009-08-19
申请人： Jae-Hyun Kang
发明人： Jae-Hyun Kang
IPC分类号： H01L21/3205 , G03F1/00
CPC分类号： H01L21/32139 , G03F1/32
摘要： A mask for forming a metal line and a via contact, and a method for fabricating a semiconductor device using the same, minimizes misalignment. The mask includes a first mask region having a dark tone for light shading, a second mask region having a half tone, being disposed within the first mask region to form the metal line, and a third mask region having a clear tone, being disposed within the second mask region to form the via contact.
摘要翻译：用于形成金属线和通孔接触的掩模以及使用其形成半导体器件的方法使不对准最小化。掩模包括：具有用于遮光的暗色调的第一掩模区域，具有半色调的第二掩模区域，设置在第一掩模区域内以形成金属线;以及第三掩模区域，具有清晰色调，第二掩模区域以形成通孔接触。

3. 发明申请

US20090114960A1 Image Sensor and a Method for Manufacturing the Same 审中-公开
标题翻译：图像传感器及其制造方法
公开(公告)号：US20090114960A1
公开(公告)日：2009-05-07
申请号：US12209348
申请日：2008-09-12
申请人： Ju Hyun Kim , Jae Hyun Kang
发明人： Ju Hyun Kim , Jae Hyun Kang
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/02162 , H01L27/14621 , H01L27/14632
摘要： An image sensor and method for manufacturing the same are provided. According to an embodiment, the image sensor includes a photodiode on a semiconductor substrate according to unit pixels; an insulating layer arranged on the semiconductor substrate; and an inter metal dielectric (IMD) including metal wirings arranged on the insulating layer. A trench is provided through the IMD in a region corresponding to the photodiode for each unit pixel; and a color filter is arranged filling the trench. The color filter can function as a wave guide to improve the photosensitivity of the image sensor.
摘要翻译：提供了一种图像传感器及其制造方法。根据实施例，图像传感器包括根据单位像素的半导体衬底上的光电二极管; 布置在所述半导体衬底上的绝缘层; 以及包括布置在绝缘层上的金属布线的金属间介电体（IMD）。在对应于每个单位像素的光电二极管的区域中，通过IMD提供沟槽; 布置了填充沟槽的滤色器。滤色器可以用作波导，以提高图像传感器的光敏度。

4. 发明申请

US20080283892A1 Cylinder-Type Capacitor and Storage Device, and Method(s) for Fabricating the Same 审中-公开
标题翻译：圆筒型电容器和存储装置及其制造方法
公开(公告)号：US20080283892A1
公开(公告)日：2008-11-20
申请号：US12168731
申请日：2008-07-07
申请人： Jae Hyun KANG
发明人： Jae Hyun KANG
IPC分类号： H01L29/94 , H01L21/8242
CPC分类号： H01L28/91 , G03F1/32 , H01L27/10817 , H01L27/10852
摘要： A one cylinder storage device and a method for fabricating a capacitor are disclosed, realizing simplified fabrication by overexposure with a mask having a plurality of holes, in which the method includes forming a contact hole in an insulating layer on a semiconductor substrate; forming a conductive layer on the insulating layer to fill the contact hole; forming a photoresist layer on the conductive layer; forming a photoresist layer pattern by overexposure and generating a side lobe phenomenon; forming a cylindrical lower electrode by patterning the conductive layer using the photoresist layer pattern as a mask; and forming a dielectric layer and an upper electrode covering the lower electrode.
摘要翻译：公开了一种单缸存储装置和电容器的制造方法，其特征在于，利用具有多个孔的掩模实现了曝光过程的简化制造，其中该方法包括在半导体基板上的绝缘层中形成接触孔; 在所述绝缘层上形成导电层以填充所述接触孔; 在导电层上形成光致抗蚀剂层; 通过过度曝光形成光致抗蚀剂层图案并产生旁瓣现象; 通过使用光致抗蚀剂层图案作为掩模对导电层进行图案化来形成圆柱形下电极; 以及形成覆盖下电极的电介质层和上电极。

5. 发明申请

US20070134911A1 Dual damascene process and method for forming a copper interconnection layer using same 审中-公开
标题翻译：双镶嵌工艺和使用其形成铜互连层的方法
公开(公告)号：US20070134911A1
公开(公告)日：2007-06-14
申请号：US11634308
申请日：2006-12-06
申请人： Jae-Hyun Kang
发明人： Jae-Hyun Kang
IPC分类号： H01L21/4763
CPC分类号： H01L21/76811 , H01L21/31144
摘要： A method for forming a copper interconnection using a dual damascene process includes forming a second insulating layer on a first insulating layer, the first insulating layer including a lower metal interconnection layer formed therein; forming a photoresist film pattern on the second insulating layer; forming a dry film resist film pattern on the photoresist film pattern; forming a via hole and a trench in the second insulator layer to expose a portion of the lower metal interconnection layer by etching the second insulating layer using the dry film resist film pattern and the photoresist film pattern as an etching mask; removing the DFR film pattern and the photoresist film pattern; forming a copper layer to fill the via hole and the trench; and planarizing the copper layer to form a copper interconnection layer. Planarizing the copper layer is performed using a chemical mechanical polishing method.
摘要翻译：使用双镶嵌工艺形成铜互连的方法包括在第一绝缘层上形成第二绝缘层，所述第一绝缘层包括在其中形成的下金属互连层; 在所述第二绝缘层上形成光致抗蚀剂图案; 在光致抗蚀剂膜图案上形成干膜抗蚀剂膜图案; 在第二绝缘体层中形成通孔和沟槽，通过使用干膜抗蚀剂膜图案和光致抗蚀剂膜图案作为蚀刻掩模蚀刻第二绝缘层来暴露下部金属互连层的一部分; 去除DFR膜图案和光刻胶膜图案; 形成铜层以填充通孔和沟槽; 并平坦化铜层以形成铜互连层。使用化学机械研磨法进行铜层的平坦化处理。

6. 发明申请

US20100166311A1 DIGITAL IMAGE PROCESSING APPARATUS AND METHOD OF CONTROLLING THE SAME 审中-公开
标题翻译：数字图像处理装置及其控制方法
公开(公告)号：US20100166311A1
公开(公告)日：2010-07-01
申请号：US12634891
申请日：2009-12-10
申请人： Jae-hyun Kang
发明人： Jae-hyun Kang
IPC分类号： G06K9/00 , H04N5/50
CPC分类号： H04N5/44513 , H04N5/232 , H04N5/23219
摘要： A digital image processing apparatus and a method of controlling the digital image processing apparatus are provided. The digital image processing apparatus, and associated method, may display on-screen display (OSD) regions which do not overlap a face zone display box after determining whether the face zone display box and the OSD regions overlap each other.
摘要翻译：提供了数字图像处理装置和控制数字图像处理装置的方法。数字图像处理装置和相关联的方法可以在确定面部区域显示框和OSD区域是否彼此重叠之后显示不与面部区域显示框重叠的屏幕显示（OSD）区域。

7. 发明申请

US20090162757A1 PHASE SHIFT MASK AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：相移片及其制造方法
公开(公告)号：US20090162757A1
公开(公告)日：2009-06-25
申请号：US12334512
申请日：2008-12-14
申请人： Ju-Hyun Kim , Jae-Hyun Kang
发明人： Ju-Hyun Kim , Jae-Hyun Kang
IPC分类号： G03F1/00
CPC分类号： G03F1/26 , G03F1/36
摘要： Embodiments relate to a phase shift mask and a method for manufacturing the same. According to embodiments, a phase shift mask may include a substrate, a phase shift layer disposed on and/or over an area of the substrate corresponding to a pattern to be exposed, and a dummy phase shift layer disposed on and/or over an area of the substrate where a phase shift layer may not be formed. According to embodiments, a side lobe phenomenon may be minimized.
摘要翻译：实施方式涉及相移掩模及其制造方法。根据实施例，相移掩模可以包括衬底，设置在与要暴露的图案相对应的衬底的区域上和/或上方的相移层，以及设置在区域上和/或之上的虚拟相移层可以不形成相移层的基板。根据实施例，可以使旁瓣现象最小化。

8. 发明申请

US20090029559A1 PHOTO MASK OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING PATTERN USING THE SAME 审中-公开
标题翻译：半导体器件的照片掩模和使用其形成图案的方法
公开(公告)号：US20090029559A1
公开(公告)日：2009-01-29
申请号：US12175710
申请日：2008-07-18
申请人： Jae-Hyun Kang
发明人： Jae-Hyun Kang
IPC分类号： H01L21/027 , H01L21/308
CPC分类号： H01L21/0274 , G03F1/00 , G03F1/36
摘要： There is provided a photo mask for forming a specific pattern and a specific pattern formed using the photo mask. Unlike in a related method of forming a specific pattern using a photo mask including cell lines and pad lines, the photo mask is manufactured with cell lines and pad lines, the pad lines each including at least one space line. The photoresist layer is exposed and developed using the photomask to form the photoresist pattern. The etched layer is etched in accordance with the photoresist pattern to form the specific pattern. Therefore, it is possible to improve the pattern uniformity of the semiconductor device and thus to improve yield.
摘要翻译：提供了用于形成特定图案的光掩模和使用光掩模形成的特定图案。与使用包括细胞线和衬垫线的光掩模形成特定图案的相关方法不同，光掩模用单元线和衬垫线制造，衬垫线各自包括至少一个空间线。使用光掩模曝光和显影光致抗蚀剂层以形成光致抗蚀剂图案。根据光致抗蚀剂图案蚀刻蚀刻层以形成特定图案。因此，可以提高半导体器件的图案均匀性，从而提高成品率。

9. 发明授权

US07402486B2 Cylinder-type capacitor and storage device, and method(s) for fabricating the same 有权
标题翻译：圆筒型电容器和存储装置及其制造方法
公开(公告)号：US07402486B2
公开(公告)日：2008-07-22
申请号：US11322882
申请日：2005-12-29
申请人： Jae Hyun Kang
发明人： Jae Hyun Kang
IPC分类号： H01L21/8234 , H01L21/8244 , H01L21/8242
CPC分类号： H01L28/91 , G03F1/32 , H01L27/10817 , H01L27/10852
摘要： A one cylinder storage device and a method for fabricating a capacitor are disclosed, realizing simplified fabrication by overexposure with a mask having a plurality of holes, in which the method includes forming a contact hole in an insulating layer on a semiconductor substrate; forming a conductive layer on the insulating layer to fill the contact hole; forming a photoresist layer on the conductive layer; forming a photoresist layer pattern by overexposure and generating a side lobe phenomenon; forming a cylindrical lower electrode by patterning the conductive layer using the photoresist layer pattern as a mask; and forming a dielectric layer and an upper electrode covering the lower electrode.
摘要翻译：公开了一种单缸存储装置和制造电容器的方法，通过具有多个孔的掩模实现过度曝光的简化制造，其中该方法包括在半导体衬底上的绝缘层中形成接触孔; 在所述绝缘层上形成导电层以填充所述接触孔; 在导电层上形成光致抗蚀剂层; 通过过度曝光形成光致抗蚀剂层图案并产生旁瓣现象; 通过使用光致抗蚀剂层图案作为掩模对导电层进行图案化来形成圆柱形下电极; 以及形成覆盖下电极的电介质层和上电极。

10. 发明申请

US20070126913A1 IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US20070126913A1
公开(公告)日：2007-06-07
申请号：US11567008
申请日：2006-12-05
申请人： Jae Hyun Kang
发明人： Jae Hyun Kang
IPC分类号： H04N5/225
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14685
摘要： Embodiments relate to an image sensor and a method of fabricating the same. In embodiments, the image sensor may include a semiconductor substrate having a photo detector, and a micro-lens array including lenses for guiding light incident from an exterior toward the photo detector, wherein the micro-lens array may include a dry film resist material. The dry film resist may include a polymer having a glass transition temperature of approximately 100° C. or less, and a molecular weight of approximately 10,000 or less.
摘要翻译：实施例涉及图像传感器及其制造方法。在实施例中，图像传感器可以包括具有光电检测器的半导体衬底和包括用于引导从外部入射到光检测器的光的透镜的微透镜阵列，其中微透镜阵列可以包括干膜抗蚀剂材料。干膜抗蚀剂可以包括玻璃化转变温度为约100℃以下，分子量约为10,000以下的聚合物。

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