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1. 发明授权

US07176579B2 Semiconductor module 失效
标题翻译：半导体模块
公开(公告)号：US07176579B2
公开(公告)日：2007-02-13
申请号：US10733581
申请日：2003-12-12
申请人： Satoru Konishi , Tsuneo Endoh , Hirokazu Nakajima , Masaaki Tsuchiya
发明人： Satoru Konishi , Tsuneo Endoh , Hirokazu Nakajima , Masaaki Tsuchiya
IPC分类号： H01L23/538 , H01L23/58
CPC分类号： H01L25/0657 , H01L23/3121 , H01L23/3677 , H01L24/48 , H01L24/73 , H01L25/0652 , H01L2224/05599 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/45099 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/85399 , H01L2225/0651 , H01L2225/06541 , H01L2225/06555 , H01L2225/06582 , H01L2225/06589 , H01L2924/00014 , H01L2924/01078 , H01L2924/07802 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/15153 , H01L2924/1517 , H01L2924/181 , H01L2924/19011 , H01L2924/19041 , H01L2924/19104 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H05K1/0206 , H05K1/0298 , H05K1/183 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： The present invention realizes the miniaturization of a semiconductor module. The semiconductor module includes a module board having external electrode terminals and a heat radiation pad over a lower surface thereof, a first semiconductor chip incorporating an initial-stage transistor of a high frequency power amplifying device therein, a second semiconductor chip incorporating a next-stage transistor and a final-stage transistor therein, and an integrated passive device which constitutes a matching circuit. At least one of the first semiconductor chip and the second semiconductor chip and the integrated passive device are mounted over an upper surface of the module board in an overlapped manner.
摘要翻译：本发明实现了半导体模块的小型化。半导体模块包括在其下表面上具有外部电极端子和散热垫的模块板，其中包括其中的高频功率放大装置的初级晶体管的第一半导体芯片，包含下一级的第二半导体芯片晶体管和其中的最后级晶体管，以及构成匹配电路的集成无源器件。第一半导体芯片和第二半导体芯片和集成无源器件中的至少一个以重叠的方式安装在模块板的上表面上。

2. 发明申请

US20050087890A1 Resin molded type semiconductor device and a method of manufacturing the same 有权
标题翻译：树脂模制型半导体器件及其制造方法
公开(公告)号：US20050087890A1
公开(公告)日：2005-04-28
申请号：US10991864
申请日：2004-11-19
申请人： Masanori Minamio , Satoru Konishi , Yoshihiko Morishita , Yuichiro Yamada , Fumito Itoh
发明人： Masanori Minamio , Satoru Konishi , Yoshihiko Morishita , Yuichiro Yamada , Fumito Itoh
IPC分类号： H01L23/31 , H01L23/495 , H01L23/28
CPC分类号： H01L23/49541 , H01L23/3107 , H01L23/49548 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2924/00014 , H01L2924/181 , H01L2924/00 , H01L2924/00015 , H01L2224/05599 , H01L2924/00012
摘要： A resin molded type semiconductor device has: a semiconductor chip (12) which is mounted on a die pad portion (11) of a lead frame (9); thin metal wires (14) which connect terminals of the semiconductor chip (12) to inner lead portions (13) of the lead frame (9); and a sealing resin (15), and the lead frame (9) is subjected to an upsetting process so that a supporting portion (11) is located at a position higher than the inner lead portions (13). Since the sealing resin of a thickness corresponding to the step difference of the upsetting exists below the supporting portion, the adhesiveness between the lead frame and the sealing resin can be improved, and high reliability and thinning are realized. Since at least one groove portion is disposed in the surface of each of the inner lead portions (13), the anchoring effect to the sealing resin (15), stress acting on a lead portion of a product, and stress to the thin metal wires (14) can be relaxed, and leads and the thin metal wires can be prevented from peeling off.
摘要翻译：树脂模制型半导体器件具有：半导体芯片（12），其安装在引线框架（9）的芯片焊盘部分（11）上; 将半导体芯片（12）的端子连接到引线框架（9）的内引线部分（13）的细金属线（14）; 和密封树脂（15），并且引线框架（9）经受镦锻处理，使得支撑部分（11）位于比内部引线部分（13）高的位置。由于对应于镦粗阶梯差的厚度的密封树脂存在于支撑部分的下方，因此可以提高引线框架和密封树脂之间的粘合性，并且实现高可靠性和变薄。由于至少一个槽部设置在每个内部引线部分（13）的表面中，所以对密封树脂（15）的锚定效应，作用在产品的引线部分上的应力和对金属细线的应力（14）可以松弛，并且可以防止导线和细金属线剥离。

3. 发明申请

US20090194792A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090194792A1
公开(公告)日：2009-08-06
申请号：US12413010
申请日：2009-03-27
申请人： Satoru Konishi , Tsuneo Endo , Hirokazu Nakajima , Yasunari Umemoto , Satoshi Sasaki , Chushiro Kusano , Yoshinori Imamura , Atsushi Kurokawa
发明人： Satoru Konishi , Tsuneo Endo , Hirokazu Nakajima , Yasunari Umemoto , Satoshi Sasaki , Chushiro Kusano , Yoshinori Imamura , Atsushi Kurokawa
IPC分类号： H01L27/082 , H01L23/498
CPC分类号： H01L29/4933 , H01L21/84 , H01L23/4824 , H01L23/49844 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/16 , H01L29/456 , H01L29/7835 , H01L2224/1403 , H01L2224/16235 , H01L2224/1703 , H01L2224/32145 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/49175 , H01L2224/73253 , H01L2224/73265 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device has an external wiring for GND formed over an underside surface of a wiring substrate. A plurality of via holes connecting to the external wiring for GND are formed to penetrate the wiring substrate. A first semiconductor chip of high power consumption, including HBTs, is mounted over a principal surface of the wiring substrate. The emitter bump electrode of the first semiconductor chip is connected in common with emitter electrodes of a plurality of HBTs formed in the first semiconductor chip. The emitter bump electrode is extended in a direction in which the HBTs line up. The first semiconductor chip is mounted over the wiring substrate so that a plurality of the via holes are connected with the emitter bump electrode. A second semiconductor chip lower in heat dissipation value than the first semiconductor chip is mounted over the first semiconductor chip.
摘要翻译：半导体器件具有在布线基板的下表面上形成的用于GND的外部布线。连接到GND的外部配线的多个通孔形成为穿透布线基板。包括HBT的高功率的第一半导体芯片安装在布线基板的主表面上。第一半导体芯片的发射极电极与形成在第一半导体芯片中的多个HBT的发射极共同连接。发射极电极沿HBT排列的方向延伸。第一半导体芯片安装在布线基板上，使得多个通孔与发射极电极连接。散热值比第一半导体芯片低的第二半导体芯片安装在第一半导体芯片上。

4. 发明授权

US07154760B2 Power amplifier module 失效
标题翻译：功率放大器模块
公开(公告)号：US07154760B2
公开(公告)日：2006-12-26
申请号：US10733289
申请日：2003-12-12
申请人： Satoru Konishi , Tsuneo Endoh , Masaaki Tsuchiya , Hirokazu Nakajima
发明人： Satoru Konishi , Tsuneo Endoh , Masaaki Tsuchiya , Hirokazu Nakajima
IPC分类号： H05K7/02 , H05K7/06 , H05K7/08 , H05K7/10
CPC分类号： H05K3/303 , H01L23/3121 , H01L23/3677 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L25/0657 , H01L2224/16225 , H01L2224/16235 , H01L2224/32013 , H01L2224/32225 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/73257 , H01L2224/73265 , H01L2224/83138 , H01L2224/97 , H01L2225/0651 , H01L2225/06517 , H01L2225/06527 , H01L2225/06541 , H01L2225/06555 , H01L2225/06582 , H01L2225/06589 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01041 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/12041 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H05K1/183 , H05K2201/0367 , H05K2201/09781 , H05K2201/10515 , H05K2201/2036 , Y02P70/613 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/05599 , H01L2224/0401
摘要： The present invention realizes strengthening of a ground of a lower-surface ground electrode of an upper semiconductor chip and miniaturization in a semiconductor module on which two semiconductor chips are mounted in a stacked manner. A lower semiconductor chip is fixed to a bottom of a recess formed in an upper surface of a module board, and an upper semiconductor chip is fixed to an upper surface of a support body made of conductor which is formed over the upper surface of the module board around the recess. External electrode terminals and a heat radiation pad are formed over a lower surface of the module board.
摘要翻译：本发明实现了以半导体模块中的上半导体芯片的下表面接地电极的接地强化和半导体模块的小型化，其中以半导体芯片堆叠的方式安装两个半导体芯片。下半导体芯片固定在形成在模块板的上表面中的凹部的底部，并且上半导体芯片固定到由导体制成的支撑体的上表面，导体的上表面形成在模块的上表面上在休息室周围。外部电极端子和散热垫形成在模块板的下表面上。

5. 发明授权

US5779339A Surface light source apparatus 失效
标题翻译：表面光源装置
公开(公告)号：US5779339A
公开(公告)日：1998-07-14
申请号：US784409
申请日：1997-01-16
申请人： Satoru Konishi , Kazushige Ohta , Koji Kawada , Takashi Obata
发明人： Satoru Konishi , Kazushige Ohta , Koji Kawada , Takashi Obata
IPC分类号： G02B6/00 , F21V8/00 , G01D11/28 , G02F1/1335 , G02F1/13357 , F21V7/04
CPC分类号： G02B6/0021 , G01D11/28 , G02B6/0026
摘要： A surface light source apparatus is constituted such that an overhang portion overhanging a light source is provided on part of an end surface where the light source of an optical guide plate is arranged in such a manner that it is flush with the front surface of the optical guide plate and that an incident light control unit formed from a resin for diffusing and attenuating light is provided integratedly on at least an overhang portion side out of the overhang portion and the end surface of the optical guide plate, and accordingly light from the light source is transmitted through the overhang portion, radiated in an illumination direction, and diffused and attenuated by the incident light control unit to equalize the amount of light so that it can be used as illumination light. Thereby, the total area of the light emitting portions is increased.
摘要翻译：表面光源装置被构成为使得在端面的一部分上设置有悬垂在光源上的突出部分，其中导光板的光源以与光学器件的前表面齐平的方式排列并且由用于漫射和衰减光的树脂形成的入射光控制单元一体地设置在突出部分和导光板的端表面之外的至少一个突出部分侧上，并且因此从光源通过突出部分透射，在照射方向上辐射，并被入射光控制单元扩散和衰减，以使光量均匀，使其可以用作照明光。由此，发光部的总面积增加。

6. 发明授权

US4857365A Method of manufacturing modified wood material 失效
标题翻译：改性木材的制造方法
公开(公告)号：US4857365A
公开(公告)日：1989-08-15
申请号：US157228
申请日：1988-02-18
申请人： Shozo Hirao , Hiroaki Usui , Yoshihiro Ohta , Takashi Nakai , Hiroyuki Ishikawa , Satoru Konishi
发明人： Shozo Hirao , Hiroaki Usui , Yoshihiro Ohta , Takashi Nakai , Hiroyuki Ishikawa , Satoru Konishi
IPC分类号： B27K3/32
CPC分类号： B27K3/32 , B27K3/04
摘要： A method of manufacturing a modifed wood material can fix within a raw wood material an insoluble, non-flammable inorganic compound with a highly efficient reaction achieved between cations and anions by sequentially immersing the raw wood material at least three times alternately in each of, and different one from that employed immediately before of a first water-soluble inorganic substance solution containing cations and a second water-soluble inorganic substance solution containing anions.
摘要翻译：制造修改后的木材的方法可以在原材料中固定不溶性的不可燃无机化合物，其中阳离子和阴离子之间实现的高效反应是通过将原木材料交替地在与之前使用的第一种含有阳离子的水溶性无机物质溶液和含有阴离子的第二种水溶性无机物质溶液不同。

7. 发明授权

US4820238A Universal joint having a flexible boot 失效
标题翻译：万向节具有柔性靴
公开(公告)号：US4820238A
公开(公告)日：1989-04-11
申请号：US80974
申请日：1987-08-03
申请人： Susumu Uchida , Satoru Konishi
发明人： Susumu Uchida , Satoru Konishi
IPC分类号： F16D3/16 , F16D3/20 , F16D3/84
CPC分类号： F16D3/223 , F16D3/845 , F16D2003/22316 , F16D2003/846 , F16D2300/06 , Y10S464/906
摘要： A universal joint provided with a joint body having an inner ring disposed at one end of a first shaft and an outer ring disposed at one end of a second shaft, and a flexible boot fitted at its opposite ends to said outer ring and the first shaft. Inside the flexible boot is formed a sealed space in which grease for lubricating the joint body is enclosed and which is charged with nitrogen gas.
摘要翻译：一种万向接头，其设置有具有设置在第一轴的一端的内圈和设置在第二轴的一端的外圈的接头体，以及在其相对端部处安装到所述外圈和所述第一轴。在柔性护罩内部形成密封空间，其中用于润滑接头体的润滑脂被封闭并且装有氮气。

8. 发明授权

US07511315B2 Semiconductor device and manufacturing method therefor 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07511315B2
公开(公告)日：2009-03-31
申请号：US11108729
申请日：2005-04-19
申请人： Satoru Konishi , Tsuneo Endo , Hirokazu Nakajima , Yasunari Umemoto , Satoshi Sasaki , Chushiro Kusano , Yoshinori Imamura , Atsushi Kurokawa
发明人： Satoru Konishi , Tsuneo Endo , Hirokazu Nakajima , Yasunari Umemoto , Satoshi Sasaki , Chushiro Kusano , Yoshinori Imamura , Atsushi Kurokawa
IPC分类号： H01L21/00 , H01L29/34 , H01L23/48 , H01L21/4763
CPC分类号： H01L29/4933 , H01L21/84 , H01L23/4824 , H01L23/49844 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/16 , H01L29/456 , H01L29/7835 , H01L2224/1403 , H01L2224/16235 , H01L2224/1703 , H01L2224/32145 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/49175 , H01L2224/73253 , H01L2224/73265 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device has an external wiring for GND formed over an underside surface of a wiring substrate. A plurality of via holes connecting to the external wiring for GND are formed to penetrate the wiring substrate. A first semiconductor chip of high power consumption, including HBTs, is mounted over a principal surface of the wiring substrate. The emitter bump electrode of the first semiconductor chip is connected in common with emitter electrodes of a plurality of HBTs formed in the first semiconductor chip. The emitter bump electrode is extended in a direction in which the HBTs line up. The first semiconductor chip is mounted over the wiring substrate so that a plurality of the via holes are connected with the emitter bump electrode. A second semiconductor chip lower in heat dissipation value than the first semiconductor chip is mounted over the first semiconductor chip.
摘要翻译：半导体器件具有在布线基板的下表面上形成的用于GND的外部布线。连接到GND的外部配线的多个通孔形成为穿透布线基板。包括HBT的高功率的第一半导体芯片安装在布线基板的主表面上。第一半导体芯片的发射极电极与形成在第一半导体芯片中的多个HBT的发射极共同连接。发射极电极沿HBT排列的方向延伸。第一半导体芯片安装在布线基板上，使得多个通孔与发射极电极连接。散热值比第一半导体芯片低的第二半导体芯片安装在第一半导体芯片上。

9. 发明授权

US07301781B2 Semiconductor module 失效
标题翻译：半导体模块
公开(公告)号：US07301781B2
公开(公告)日：2007-11-27
申请号：US11585159
申请日：2006-10-24
申请人： Satoru Konishi , Tsuneo Endoh , Masaaki Tsuchiya , Hirokazu Nakajima
发明人： Satoru Konishi , Tsuneo Endoh , Masaaki Tsuchiya , Hirokazu Nakajima
IPC分类号： H05K7/02 , H05K7/06 , H05K7/08 , H05K7/10
CPC分类号： H05K3/303 , H01L23/3121 , H01L23/3677 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L25/0657 , H01L2224/16225 , H01L2224/16235 , H01L2224/32013 , H01L2224/32225 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/73257 , H01L2224/73265 , H01L2224/83138 , H01L2224/97 , H01L2225/0651 , H01L2225/06517 , H01L2225/06527 , H01L2225/06541 , H01L2225/06555 , H01L2225/06582 , H01L2225/06589 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01041 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/12041 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H05K1/183 , H05K2201/0367 , H05K2201/09781 , H05K2201/10515 , H05K2201/2036 , Y02P70/613 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/05599 , H01L2224/0401
摘要： The present invention realizes strengthening of a ground of a lower-surface ground electrode of an upper semiconductor chip and miniaturization in a semiconductor module on which two semiconductor chips are mounted in a stacked manner. A lower semiconductor chip is fixed to a bottom of a recess formed in an upper surface of a module board, and an upper semiconductor chip is fixed to an upper surface of a support body made of conductor which is formed over the upper surface of the module board around the recess. External electrode terminals and a heat radiation pad are formed over a lower surface of the module board.
摘要翻译：本发明实现了以半导体模块中的上半导体芯片的下表面接地电极的接地强化和半导体模块的小型化，其中以半导体芯片堆叠的方式安装两个半导体芯片。下半导体芯片固定在形成在模块板的上表面中的凹部的底部，并且上半导体芯片固定到由导体制成的支撑体的上表面，导体的上表面形成在模块的上表面上在休息室周围。外部电极端子和散热垫形成在模块板的下表面上。

10. 发明申请

US20070040255A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20070040255A1
公开(公告)日：2007-02-22
申请号：US11504736
申请日：2006-08-16
申请人： Yasuo Osone , Chiko Yorita , Kenya Kawano , Yu Hasegawa , Yuji Shirai , Seiichi Tomoi , Tsuneo Endou , Satoru Konishi , Hirokazu Nakajima
发明人： Yasuo Osone , Chiko Yorita , Kenya Kawano , Yu Hasegawa , Yuji Shirai , Seiichi Tomoi , Tsuneo Endou , Satoru Konishi , Hirokazu Nakajima
IPC分类号： H01L23/02
CPC分类号： H01L25/16 , H01L23/3677 , H01L23/49822 , H01L24/32 , H01L24/48 , H01L24/81 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/81801 , H01L2924/00014 , H01L2924/01033 , H01L2924/0132 , H01L2924/10329 , H01L2924/1305 , H01L2924/15153 , H01L2924/1517 , H01L2924/181 , H01L2924/19105 , H01L2924/00 , H01L2924/01031 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device capable of reducing the thermal resistance in a flip chip packaging structure while achieving both the high radiation performance and manufacturing readiness without increasing the manufacturing cost is provided. In a semiconductor device having a semiconductor circuit for power amplification and a control circuit of the semiconductor circuit laminated on a multilayer circuit board, the semiconductor circuit for power amplification and the control circuit are aligned in parallel on the same semiconductor element, and the semiconductor element is flip-chip connected on the multilayer circuit board. Further, a second semiconductor element mounted in addition to the first semiconductor element and all components and submodules are flip-chip connected. Also, a plurality of bumps are united in order to improve the radiation performance and thermal vias of the multilayer circuit board are formed in second and lower layers of the wiring layers in the multilayer circuit board.
摘要翻译：本发明提供了能够在不增加制造成本的同时实现高放射性能和制造准备性的同时降低倒装芯片封装结构中的热阻的半导体器件。在具有用于功率放大的半导体电路和叠层在多层电路板上的半导体电路的控制电路的半导体器件中，用于功率放大的半导体电路和控制电路并联在同一半导体元件上，半导体元件在多层电路板上倒装芯片连接。此外，除了第一半导体元件和所有元件和子模块之外安装的第二半导体元件被倒装连接。此外，为了提高辐射性能，将多个凸块结合起来，多层电路板的布线层的第二层和下层形成多层电路板的热通孔。

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