专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07554193B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07554193B2
公开(公告)日：2009-06-30
申请号：US11504736
申请日：2006-08-16
申请人： Yasuo Osone , Chiko Yorita , Kenya Kawano , Yu Hasegawa , Yuji Shirai , Seiichi Tomoi , Tsuneo Endou , Satoru Konishi , Hirokazu Nakajima
发明人： Yasuo Osone , Chiko Yorita , Kenya Kawano , Yu Hasegawa , Yuji Shirai , Seiichi Tomoi , Tsuneo Endou , Satoru Konishi , Hirokazu Nakajima
IPC分类号： H01L23/34 , H01L23/48
CPC分类号： H01L25/16 , H01L23/3677 , H01L23/49822 , H01L24/32 , H01L24/48 , H01L24/81 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/81801 , H01L2924/00014 , H01L2924/01033 , H01L2924/0132 , H01L2924/10329 , H01L2924/1305 , H01L2924/15153 , H01L2924/1517 , H01L2924/181 , H01L2924/19105 , H01L2924/00 , H01L2924/01031 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device capable of reducing the thermal resistance in a flip chip packaging structure while achieving both the high radiation performance and manufacturing readiness without increasing the manufacturing cost is provided. In a semiconductor device having a semiconductor circuit for power amplification and a control circuit of the semiconductor circuit laminated on a multilayer circuit board, the semiconductor circuit for power amplification and the control circuit are aligned in parallel on the same semiconductor element, and the semiconductor element is flip-chip connected on the multilayer circuit board. Further, a second semiconductor element mounted in addition to the first semiconductor element and all components and submodules are flip-chip connected. Also, a plurality of bumps are united in order to improve the radiation performance and thermal vias of the multilayer circuit board are formed in second and lower layers of the wiring layers in the multilayer circuit board.
摘要翻译：本发明提供了能够在不增加制造成本的同时实现高放射性能和制造准备性的同时降低倒装芯片封装结构中的热阻的半导体器件。在具有用于功率放大的半导体电路和叠层在多层电路板上的半导体电路的控制电路的半导体器件中，用于功率放大的半导体电路和控制电路并联在同一半导体元件上，半导体元件在多层电路板上倒装芯片连接。此外，除了第一半导体元件和所有元件和子模块之外安装的第二半导体元件被倒装连接。此外，为了提高辐射性能，将多个凸块结合起来，多层电路板的布线层的第二层和下层形成多层电路板的热通孔。

2. 发明授权

US5855112A Gas turbine engine with recuperator 失效
标题翻译：燃气涡轮发动机与换热器
公开(公告)号：US5855112A
公开(公告)日：1999-01-05
申请号：US875306
申请日：1998-03-30
申请人： Takashi Bannai , Tsuneo Endou , Masahiko Izumi , Ken Ohya
发明人： Takashi Bannai , Tsuneo Endou , Masahiko Izumi , Ken Ohya
IPC分类号： F02C3/05 , F02C3/08 , F02C3/14 , F02C7/08 , F02C7/32 , F23R3/34 , F23R3/40 , F23R3/44 , F28D9/00
CPC分类号： F02C7/08 , F02C3/05 , F02C3/085 , F02C3/14 , F23R3/40 , F23R3/44 , F28D9/0018 , F28D9/0025 , F05D2250/311
摘要： A gas turbine engine E includes a compressor wheel 9 and a turbine wheel 10 fixed to a rotary shaft 8, a can-type combustor 18 disposed on an extension of the axis L of the rotary shaft 8, and an circular plate-type heat exchanger 12 disposed to surround a radially outer portion of the can-type combustor 18. The compressor wheel 9, the turbine wheel 10, the can-type combustor 18 and the plate-type heat exchanger 12 are disposed coaxially with the axis L of the rotary shaft 8. Therefore, the flows of compressed air and combustion gas are symmetrized with respect to the axis L, and the distribution of temperature within a casing is also symmetrized with respect to the axis L. Thus, the flows of compressed air and combustion gas within the gas turbine engine E can be axially symmetrized, and the generation of a thermal distortion can be prevented.
摘要翻译： PCT No.PCT / JP96 / 02179 Sec。 371日期1998年3月30日 102（e）1998年3月30日PCT PCT 1996年8月2日PCT公布。第WO97 / 09524号公报日期1997年3月13日燃气涡轮发动机E包括压缩机叶轮9和固定在旋转轴8上的涡轮叶轮10，设置在旋转轴8的轴线L的延伸部上的罐型燃烧器18，板状热交换器12设置成围绕罐型燃烧器18的径向外部。压缩机叶轮9，涡轮机叶轮10，罐型燃烧器18和板式热交换器12与因此，压缩空气和燃烧气体的流动相对于轴线L对称，壳体内的温度分布也相对于轴线L对称。因此，流动燃气涡轮发动机E内的压缩空气和燃烧气体可以轴向对称，并且可以防止产生热变形。

3. 发明授权

US06192975B1 Heat exchanger 失效
标题翻译：热交换器
公开(公告)号：US06192975B1
公开(公告)日：2001-02-27
申请号：US09284461
申请日：1999-06-15
申请人： Hideyuki Yanai , Tadashi Tsunoda , Tsuneo Endou , Tokiyuki Wakayama
发明人： Hideyuki Yanai , Tadashi Tsunoda , Tsuneo Endou , Tokiyuki Wakayama
IPC分类号： F28D102
CPC分类号： F28F3/044 , F28D9/0025
摘要： First heat-transfer plates S1 and second heat-transfer plates S2 are radially arranged between a larger diameter cylindrical-shaped outer casing 6 and a smaller diameter cylindrical-shaped inner casing 7 to form combustion gas passages 4 and air passages 5 alternately in a circumferential direction, and a multiplicity of projections 22, 23 formed on both surfaces of the first heat-transfer plates S1 and second heat-transfer plates S2 are jointed to one another at tip ends thereof. Pitches P between adjacent projections 22, 23 are changed in a radial direction to make the number of heat transfer units substantially constant in a radial direction to uniformize temperature distributions on the first heat-transfer plates S1 and second heat-transfer plates S2 in the radial direction, thereby avoiding a decrease in heat exchanging efficiency and generation of unwanted thermal stress.
摘要翻译：第一传热板S1和第二传热板S2径向地布置在较大直径的圆柱形外壳6和较小直径的圆柱形内壳7之间，以在圆周方向上交替地形成燃烧气体通道4和空气通道5 并且形成在第一传热板S1和第二传热板S2的两个表面上的多个突起22,23在其末端彼此接合。相邻突起22,23之间的间距P在径向上变化，使得传热单元的数量在径向方向上基本恒定，以使第一传热板S1和第二传热板S2上的温度分布均匀化方向，从而避免热交换效率的降低和不期望的热应力的产生。

4. 发明授权

US6155338A Heat exchanger 失效
标题翻译：热交换器
公开(公告)号：US6155338A
公开(公告)日：2000-12-05
申请号：US849916
申请日：1997-05-29
申请人： Tsuneo Endou , Tsutomu Takahashi , Hideyuki Yanai , Toshiki Kawamura , Tokiyuki Wakayama
发明人： Tsuneo Endou , Tsutomu Takahashi , Hideyuki Yanai , Toshiki Kawamura , Tokiyuki Wakayama
IPC分类号： F28D9/00 , F28F3/04
CPC分类号： F28F3/044 , F28D9/0025 , Y10S165/399
摘要： First heat transfer plates S1 and second heat transfer plates S2 folded along crest folding lines L1 and valley folding lines L2 are bonded to an inner periphery of an outer casing 6 and an outer periphery of an inner casing 7, so that the first and second heat transfer plates S1 and S2 are disposed radiately, thereby forming combustion gas passages and air passages circumferentially alternately. One end of both the combustion gas passages and the air passages is cut into an angle shape, and one side and the other side of the angle shape are closed to form combustion gas passage inlets 11 and air passage outlets 16. In a similar manner, combustion gas passage outlets 12 and air passage inlets 15 are formed at the other end of the combustion gas passages and the air passages. Thus, it is possible to provide a heat exchanger which has a simple structure and is easy to manufacture, and in which the pressure loss due to bending of flow paths can be suppressed to the minimum.
摘要翻译： PCT No.PCT / JP96 / 02115 Sec。 371日期1997年5月29日 102（e）日期1997年5月29日PCT提交1996年7月26日PCT公布。公开号WO97 / 06395 日期1997年2月20日沿顶部折叠线L1和谷折线L2折叠的第一传热板S1和第二传热板S2接合到外壳6的内周和内壳7的外周，使得第一传热板S1和第二传热板S2被辐射地设置，从而沿周向交替地形成燃烧气体通道和空气通道。燃烧气体通道和空气通道的一端被切割成角度形状，并且角形的一侧和另一侧被关闭以形成燃烧气体通道入口11和空气通道出口16.以类似的方式，燃烧气体通道出口12和空气通道入口15形成在燃烧气体通道和空气通道的另一端。因此，可以提供一种结构简单且易于制造的热交换器，并且可以将流路弯曲引起的压力损失抑制在最小限度。

5. 发明申请

US20070040255A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20070040255A1
公开(公告)日：2007-02-22
申请号：US11504736
申请日：2006-08-16
申请人： Yasuo Osone , Chiko Yorita , Kenya Kawano , Yu Hasegawa , Yuji Shirai , Seiichi Tomoi , Tsuneo Endou , Satoru Konishi , Hirokazu Nakajima
发明人： Yasuo Osone , Chiko Yorita , Kenya Kawano , Yu Hasegawa , Yuji Shirai , Seiichi Tomoi , Tsuneo Endou , Satoru Konishi , Hirokazu Nakajima
IPC分类号： H01L23/02
CPC分类号： H01L25/16 , H01L23/3677 , H01L23/49822 , H01L24/32 , H01L24/48 , H01L24/81 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/81801 , H01L2924/00014 , H01L2924/01033 , H01L2924/0132 , H01L2924/10329 , H01L2924/1305 , H01L2924/15153 , H01L2924/1517 , H01L2924/181 , H01L2924/19105 , H01L2924/00 , H01L2924/01031 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device capable of reducing the thermal resistance in a flip chip packaging structure while achieving both the high radiation performance and manufacturing readiness without increasing the manufacturing cost is provided. In a semiconductor device having a semiconductor circuit for power amplification and a control circuit of the semiconductor circuit laminated on a multilayer circuit board, the semiconductor circuit for power amplification and the control circuit are aligned in parallel on the same semiconductor element, and the semiconductor element is flip-chip connected on the multilayer circuit board. Further, a second semiconductor element mounted in addition to the first semiconductor element and all components and submodules are flip-chip connected. Also, a plurality of bumps are united in order to improve the radiation performance and thermal vias of the multilayer circuit board are formed in second and lower layers of the wiring layers in the multilayer circuit board.
摘要翻译：本发明提供了能够在不增加制造成本的同时实现高放射性能和制造准备性的同时降低倒装芯片封装结构中的热阻的半导体器件。在具有用于功率放大的半导体电路和叠层在多层电路板上的半导体电路的控制电路的半导体器件中，用于功率放大的半导体电路和控制电路并联在同一半导体元件上，半导体元件在多层电路板上倒装芯片连接。此外，除了第一半导体元件和所有元件和子模块之外安装的第二半导体元件被倒装连接。此外，为了提高辐射性能，将多个凸块结合起来，多层电路板的布线层的第二层和下层形成多层电路板的热通孔。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式