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1. 发明申请

US20020182985A1 Polishing method for removing corner material from a semi-conductor wafer 失效
标题翻译：用于从半导体晶片去除角材料的抛光方法
公开(公告)号：US20020182985A1
公开(公告)日：2002-12-05
申请号：US10162225
申请日：2002-06-05
申请人： SPEEDFAM Co., Ltd.
发明人： Masami Shiino , Shinji Toda , Tomohiro Aizawa , Tsukasa Taniwaki
IPC分类号： B24B001/00
CPC分类号： B24B9/065 , B24B37/04
摘要： In the polishing apparatus, the rotating corner polishing member is positioned so that its edge is aligned with the edge of the insulation film, and a pressing means applied the corner polishing member to the metal film of the periphery thereof. The metal film is removed by the rotary driven polishing member and slurry supplied to the polishing area. The metal portion penetrated in the corner formed by the side wall of the insulation film and the surface of the semi-conductor wafer substrate that is extremely difficult to be removed by the conventional removal method, can be removed substantially completely.
摘要翻译：在抛光装置中，旋转角抛光构件被定位成使其边缘与绝缘膜的边缘对准，并且加压装置将拐角抛光构件施加到其周边的金属膜。通过旋转驱动的研磨部件除去金属膜，将浆料供给到研磨区域。渗透在由绝缘膜的侧壁形成的角部的金属部分和通过常规去除方法极难除去的半导体晶片基板的表面可以被基本上完全去除。

2. 发明授权

US11145492B2 Local dry etching apparatus 有权
公开(公告)号：US11145492B2
公开(公告)日：2021-10-12
申请号：US16584035
申请日：2019-09-26
申请人： SpeedFam Co., Ltd.
发明人： Yasushi Obara
IPC分类号： H01J37/32 , H01L21/67
摘要： A local dry etching apparatus includes a vacuum chamber that has a predetermined degree of vacuum therewithin, a nozzle including a first end and a second end, at least the first end of the nozzle open to the vacuum chamber, a discharge tube including a first end that is connected to the second end of the nozzle, a plasma generator provided in the discharge tube, an electromagnetic wave irradiation part configured to oscillate electromagnetic waves and connected to the discharge tube via the electromagnetic wave transmitter to introduce the oscillated electromagnetic waves to the plasma generator, and a spacer interposed between the nozzle and the discharge tube.

3. 发明申请

US20170278674A1 LOCAL DRY ETCHING APPARATUS 审中-公开
公开(公告)号：US20170278674A1
公开(公告)日：2017-09-28
申请号：US15463941
申请日：2017-03-20
申请人： SPEEDFAM Co., Ltd.
发明人： Yasushi OBARA
IPC分类号： H01J37/32 , H01L21/67
CPC分类号： H01J37/3244 , H01J37/32009 , H01J37/32192 , H01J37/32229 , H01J37/32357 , H01J37/32366 , H01J37/32724 , H01J2237/334 , H01L21/67069
摘要： A local dry etching apparatus includes a vacuum chamber, a nozzle opened in the vacuum chamber, a discharge tube connected to the nozzle, a workpiece table disposed in the vacuum chamber for mounting a workpiece thereon, a table driving device, a table driving control device, an electromagnetic wave oscillator, a gas supply device for supplying a raw material gas to the discharge tube, a plasma generation portion formed in the discharge tube, and an electromagnetic wave transmission unit for irradiation of electromagnetic waves oscillated in the electromagnetic wave oscillator to the plasma generation portion, in which the nozzle and the discharge tube are composed of separate parts and a temperature adjusting unit is provided for adjusting the temperature of at least one of the nozzle and the discharge tube.

4. 发明申请

US20160104601A1 LOCAL DRY ETCHING APPARATUS 审中-公开
标题翻译：本地干燥装置
公开(公告)号：US20160104601A1
公开(公告)日：2016-04-14
申请号：US14876573
申请日：2015-10-06
申请人： SPEEDFAM Co., Ltd.
发明人： Yasushi OBARA
IPC分类号： H01J37/32
摘要： A local dry etching apparatus includes a single vacuum chamber, a plurality of gas introduction units each including a discharge tube having an injection port opened in the vacuum chamber, a single workpiece table disposed in the vacuum chamber and mounting a workpiece thereon, a table driving device, a table driving control device, a gas supply device for supplying raw material gases to the gas introduction units, a single electromagnetic wave oscillator, plasma generation portions each formed to each of the discharge tubes of the gas introduction units, and an electromagnetic wave transmission unit having an electromagnetic wave switching unit capable of switching an electromagnetic wave such that one of the plasma generation portions is irradiated with the electromagnetic wave, in which the respective gas introduction units inject plasma having different fabrication characteristics.
摘要翻译：局部干式蚀刻装置包括单个真空室，多个气体导入单元，每个气体导入单元包括具有在真空室中开口的注入口的排放管，设置在真空室中的单个工作台，并在其上安装工件，工作台驱动设备，台面驱动控制装置，用于向气体导入单元供给原料气体的气体供给装置，单个电磁波振荡器，各自形成于气体导入部的各放电管的等离子体产生部，以及电磁波传输单元具有能够切换电磁波的电磁波切换单元，使得等离子体产生部分之一被电磁波照射，其中各个气体引入单元注入具有不同制造特性的等离子体。

5. 发明申请

US20030134570A1 Wafer edge polishing system 失效
标题翻译：晶圆抛光系统
公开(公告)号：US20030134570A1
公开(公告)日：2003-07-17
申请号：US10340668
申请日：2003-01-13
申请人： SPEEDFAM Co., Ltd.
发明人： Shunji Hakomori
IPC分类号： B24B049/00 , B24B007/19
CPC分类号： B24B9/065 , B24B49/00
摘要： Disclosed is a wafer edge polishing system which improves the throughput and reduces the average processing cost. The system incorporates a wafer inspection unit. A wafer is polished in a wafer edge polishing unit and carried by a carrier unit to the wafer inspection unit where the polished surfaces of the wafer is inspected, and if it is judged as poorly polished, it is re-carried to the wafer edge polishing unit by the carrier unit.
摘要翻译：公开了一种提高生产量并降低平均处理成本的晶片边缘抛光系统。该系统包含晶片检查单元。将晶片在晶片边缘抛光单元中抛光，并由承载单元承载在晶片检查单元上，在该晶圆检查单元中检查晶片的抛光表面，如果判断为抛光不良，则将其重新载入晶片边缘抛光单位由承运人单位。

6. 发明授权

US6432824B2 Method for manufacturing a semiconductor wafer 失效
标题翻译：半导体晶片的制造方法
公开(公告)号：US6432824B2
公开(公告)日：2002-08-13
申请号：US78542501
申请日：2001-02-20
申请人： SPEEDFAM CO LTD
发明人： YANAGISAWA MICHIHIKO
IPC分类号： C30B33/00 , H01L21/00 , H01L21/302 , H01L21/304 , H01L21/3065
CPC分类号： H01L21/02019 , C30B33/00 , H01L21/3065 , H01L21/67069 , Y10S438/974
摘要： In the semiconductor wafer manufacturing method of the present invention, a deteriorated layer on the surface of a semiconductor wafer which has been made flat by lapping or polishing is removed by the following dry etching. Plasma which contains a neutral active species is generated within a discharge tube. The neutral active species is separated from the plasma thus generated and is then conveyed to an orifice side of a nozzle portion of the discharge tube. The orifice is opposed to the wafer surface and the nozzle portion moves along the wafer surface while the neutral active species is sprayed from the nozzle orifice toward the wafer surface which is pre-heated. By such dry etching, the deteriorated layer on the wafer surface is removed without the occurrence of any etch pit.
摘要翻译：在本发明的半导体晶片制造方法中，通过以下的干法蚀刻除去已经通过研磨或研磨而被平坦化的半导体晶片的表面上的劣化层。在放电管内产生含有中性活性物质的等离子体。中性活性物质与所产生的等离子体分离，然后输送到放电管的喷嘴部分的孔口侧。孔口与晶片表面相对，并且喷嘴部分沿着晶片表面移动，而中性活性物质从喷嘴孔喷射到预热的晶片表面。通过这种干蚀刻，去除晶片表面上的劣化层而不发生任何蚀刻坑。

7. 发明授权

US6422930B2 Apparatus for removing deposited film 失效
标题翻译：去除沉积膜的设备
公开(公告)号：US6422930B2
公开(公告)日：2002-07-23
申请号：US76465501
申请日：2001-01-17
申请人： SPEEDFAM CO LTD
发明人： HAKOMORI SHUNJI
IPC分类号： B24B9/00 , B24B9/06 , H01L21/304 , B24B21/00
CPC分类号： B24B9/065
摘要： An edge face of a deposited film at an edge portion of a device wafer having the deposited film formed on a substrate is polished at a substantially right angle so as to prevent the deposited film from peeling-off and dusting. A forming body having a sectional shape substantially agreeing with that of an edge portion of a device wafer after polishing, which is an object to be polished, is rotated and brought into contact with a polishing body so as to form a polishing portion on the polishing body surface. The edge portion of the object-to be polished is rotated and urged into contact with the formed polishing portion, so that the edge portion of the object to be polished is polished in a sectional shape agreeing with that of the polishing portion of the polishing body. The edge face of the deposited film on the substrate surface is polished not slantingly but at a right angel so as to be removed, so that peeling-off of the deposited film due to a post-process, etc., which will generate a foreign substance, can be prevented.
摘要翻译：在具有形成在基板上的沉积膜的器件晶片的边缘部分处的沉积膜的边缘面以大致直角被抛光，以防止沉积的膜被剥离和撒粉。具有与抛光后的装置晶片的边缘部分基本一致的成形体，该被研磨物体被旋转并与抛光体接触，从而在抛光时形成抛光部分身体表面。要被抛光的物体的边缘部分被旋转并被推动与形成的抛光部分接触，使得被抛光物体的边缘部分被抛光成与抛光体的抛光部分一致的截面形状。基板表面上的沉积膜的边缘面不是倾斜地而是在右天使被抛光以便被去除，从而由于后处理而导致的沉积膜的剥离等会产生外来的物质，可以防止。

8. 发明申请

US20040142571A1 Local dry etching method 失效
标题翻译：局部干蚀刻法
公开(公告)号：US20040142571A1
公开(公告)日：2004-07-22
申请号：US10623740
申请日：2003-07-22
申请人： Speedfam Co., Ltd.
发明人： Michihiko Yanagisawa , Tadayoshi Okuya
IPC分类号： H01L021/302 , H01L021/461
CPC分类号： H01L21/6708 , H01L21/31055 , H01L21/31056
摘要： This invention provides a local dry etching method comprising the step of removing an oxide film formed on the surface of a semiconductor water before unevenness on the semiconductor wafer is removed by scanning the surface of the semiconductor wafer at a controlled relative speed with a nozzle for applying a flow of activated species gas to the surface of the semiconductor wafer. The removal of this oxide film is carried out by widening an etching profile and a scan pitch and making the nozzle speed constant, and then flattening is carried out in the same local dry etching apparatus. For flattening, the nozzle speed is changed for each area according to initial unevenness.
摘要翻译：本发明提供了一种局部干式蚀刻方法，其包括以下步骤：通过用控制相对速度扫描半导体晶片的表面去除在半导体晶片上的不均匀之前在半导体水表面上形成的氧化膜，活化物质气体流到半导体晶片的表面。通过加深蚀刻轮廓和扫描间距并使喷嘴速度恒定，然后在相同的局部干法蚀刻装置中进行平坦化来进行该氧化膜的去除。为了平坦化，根据初始不均匀性，针对每个区域改变喷嘴速度。

9. 发明申请

US20040063329A1 Multi-step local dry etching method for SOI wafer 审中-公开
标题翻译： SOI晶片的多步局部干法蚀刻方法
公开(公告)号：US20040063329A1
公开(公告)日：2004-04-01
申请号：US10671483
申请日：2003-09-29
申请人： Speedfam Co., Ltd.
发明人： Michihiko Yanagisawa , Kazuyuki Tsuruoka , Yasuhiro Horiike
IPC分类号： H01L021/302
CPC分类号： H01L21/3065
摘要： A local dry etching method for a SOI wafer capable of flattening an active silicon layer to a layer thickness of a target at a high throughput and to a required accuracy by using a multi-step local dry etching apparatus wherein the apparatus comprises first and second vacuum chambers, a small diameter nozzle, a large diameter nozzle of a diameter larger than that of the small diameter nozzle, an activated species gas generator for generating activated species gases to be blown out of each of the nozzles, each of feeding devices disposed in each of the vacuum chambers for providing a relative speed between the SOI wafer and each of the nozzles to conduct scanning and transportation device, in which the active silicon layer of the SOI waver is etched in the first vacuum chamber to remove the surface unevenness and the active silicon layer is etched to a required layer thickness in the second vacuum chamber.
摘要翻译：一种能够通过使用多步局部干蚀刻装置将能够以高生产量将有源硅层平坦化为目标物的层厚度并达到所需精度的SOI晶片的局部干式蚀刻方法，其中该装置包括第一和第二真空各直径喷嘴，直径大于直径喷嘴的直径大的喷嘴;活塞种气体发生器，用于产生从每个喷嘴吹出的活化物质气体，每个喷嘴设置在每个喷嘴中的真空室，用于提供SOI晶片和每个喷嘴之间的相对速度，以进行扫描和输送装置，其中在第一真空室中蚀刻SOI流体的活性硅层以去除表面不均匀性和活性硅层被蚀刻到第二真空室中所需的层厚度。

10. 发明申请

US20030199168A1 Local dry etching method 失效
标题翻译：局部干蚀刻法
公开(公告)号：US20030199168A1
公开(公告)日：2003-10-23
申请号：US10419199
申请日：2003-04-21
申请人： Speedfam Co., Ltd.
发明人： Michihiko Yanagisawa , Kazuyuki Tsuruoka
IPC分类号： H01L021/461
CPC分类号： H01J37/32009 , H01J37/32376 , H01L21/3065
摘要： In a local dry etching method, position-thickness data of a semiconductor wafer is previously obtained by measuring the wafer surface, components of position-thickness data shorter than a predetermined spatial wavelength are cut off by filtering and nozzle-wafer relative speed for planarizing the surface is calculated using the filtered data.
摘要翻译：在本地干蚀刻方法中，通过测量晶片表面预先获得半导体晶片的位置厚度数据，通过滤波和喷嘴 - 晶片相对速度来切割比预定空间波长短的位置厚度数据的分量，以平坦化使用滤波后的数据计算表面。

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