专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20020008082A1 Local etching apparatus and local etching method 审中-公开
标题翻译：局部蚀刻装置和局部蚀刻方法
公开(公告)号：US20020008082A1
公开(公告)日：2002-01-24
申请号：US09898940
申请日：2001-07-05
申请人： SpeedFam Co., Ltd.
发明人： Chikai Tanaka , Michihiko Yanagisawa , Shinya Iida , Yasuhiro Horiike
IPC分类号： H01L021/3065
CPC分类号： H01J37/32357 , H01J37/32376 , H01L21/6708
摘要： A local etching apparatus, and a local etching method are provided to give a high etching rate and enable fine etching. A quartz discharge tube 2 passes through a chamber 9 and has a spray port 21 of a nozzle portion 20 facing a silicon wafer W. A plasma generator 1 causes plasma discharge of a gas fed to the quartz discharge tube 2 so as to produce radicals. An exhaust portion 6 has an exhaust pipe 60 arranged near the nozzle portion 20 so that the spray port 21 of the nozzle portion 20 projects out to the silicon wafer W side from the suction port 60a. The exhaust portion 6 draws into the suction port 60a of the exhaust pipe 60 the reaction products G produced when locally etching the silicon wafer W by the radicals R and exhausts them to the outside of the chamber 9. Desirably, an etching region limiting portion 7 can be provided to feed into the chamber 9 a gas of a predetermined pressure for suppressing the spread of the radicals R sprayed from the spray port 21 of the nozzle portion 20.
摘要翻译：提供局部蚀刻装置和局部蚀刻方法以提供高蚀刻速率并且能够进行精细蚀刻。石英放电管2通过腔室9并具有面向硅晶片W的喷嘴部分20的喷射口21.等离子体发生器1使得供给到石英放电管2的气体的等离子体放电以产生自由基。排气部6具有配置在喷嘴部20附近的排气管60，喷嘴部20的喷出口21从吸入口60a突出到硅晶片W侧。排气部6将由自由基R局部蚀刻硅晶片W而产生的反应产物G吸入排气管60的吸入口60a，并将其排出到室9的外部。期望地，蚀刻区域限制部7 可以提供给腔室9中的预定压力的气体，以抑制从喷嘴部分20的喷射口21喷射的自由基R的扩散。

2. 发明申请

US20010007275A1 Wafer flattening process and system 审中-公开
公开(公告)号：US20010007275A1
公开(公告)日：2001-07-12
申请号：US09799312
申请日：2001-03-05
申请人： SpeedFam Co., Ltd.
发明人： Michihiko Yanagisawa , Shinya Iida , Yasuhiro Horiike
IPC分类号： B44C001/22 , C23F001/00
CPC分类号： H01L21/3065 , H01J37/32192 , H01J2237/336 , H01L21/31056 , H01L21/67069
摘要： A wafer flattening process and system enables a reduction of the surface roughness of a wafer resulting from local etching. A silicon wafer W is brought into close proximity to a nozzle portion 20 to feed SF6 gas to an alumina discharge tube 2, a plasma generator 1 is used to cause plasma discharge and spray a first activated species gas from the nozzle portion 20 to the silicon wafer W side, an X-Y drive mechanism 4 is used to make the nozzle portion 20 scan to perform a local etching step. Then the silicon wafer W is moved away from the nozzle portion 20 and O2 gas and CF4 gas are fed to the alumina discharge tube. At this time, the O2 gas is set to be greater in amount than the CF4 gas. When this mixed gas is made to discharge to generate plasma, a second activated species gas diffuses from the nozzle portion 20 to the entire surface of the silicon wafer W. Since there is a larger amount of O radicals than F radicals, the reaction product resulting from the O radicals deposit in fine depressions causing roughness and the front surface of the silicon wafer W is smoothed.

3. 发明申请

US20040142571A1 Local dry etching method 失效
标题翻译：局部干蚀刻法
公开(公告)号：US20040142571A1
公开(公告)日：2004-07-22
申请号：US10623740
申请日：2003-07-22
申请人： Speedfam Co., Ltd.
发明人： Michihiko Yanagisawa , Tadayoshi Okuya
IPC分类号： H01L021/302 , H01L021/461
CPC分类号： H01L21/6708 , H01L21/31055 , H01L21/31056
摘要： This invention provides a local dry etching method comprising the step of removing an oxide film formed on the surface of a semiconductor water before unevenness on the semiconductor wafer is removed by scanning the surface of the semiconductor wafer at a controlled relative speed with a nozzle for applying a flow of activated species gas to the surface of the semiconductor wafer. The removal of this oxide film is carried out by widening an etching profile and a scan pitch and making the nozzle speed constant, and then flattening is carried out in the same local dry etching apparatus. For flattening, the nozzle speed is changed for each area according to initial unevenness.
摘要翻译：本发明提供了一种局部干式蚀刻方法，其包括以下步骤：通过用控制相对速度扫描半导体晶片的表面去除在半导体晶片上的不均匀之前在半导体水表面上形成的氧化膜，活化物质气体流到半导体晶片的表面。通过加深蚀刻轮廓和扫描间距并使喷嘴速度恒定，然后在相同的局部干法蚀刻装置中进行平坦化来进行该氧化膜的去除。为了平坦化，根据初始不均匀性，针对每个区域改变喷嘴速度。

4. 发明申请

US20040063329A1 Multi-step local dry etching method for SOI wafer 审中-公开
标题翻译： SOI晶片的多步局部干法蚀刻方法
公开(公告)号：US20040063329A1
公开(公告)日：2004-04-01
申请号：US10671483
申请日：2003-09-29
申请人： Speedfam Co., Ltd.
发明人： Michihiko Yanagisawa , Kazuyuki Tsuruoka , Yasuhiro Horiike
IPC分类号： H01L021/302
CPC分类号： H01L21/3065
摘要： A local dry etching method for a SOI wafer capable of flattening an active silicon layer to a layer thickness of a target at a high throughput and to a required accuracy by using a multi-step local dry etching apparatus wherein the apparatus comprises first and second vacuum chambers, a small diameter nozzle, a large diameter nozzle of a diameter larger than that of the small diameter nozzle, an activated species gas generator for generating activated species gases to be blown out of each of the nozzles, each of feeding devices disposed in each of the vacuum chambers for providing a relative speed between the SOI wafer and each of the nozzles to conduct scanning and transportation device, in which the active silicon layer of the SOI waver is etched in the first vacuum chamber to remove the surface unevenness and the active silicon layer is etched to a required layer thickness in the second vacuum chamber.
摘要翻译：一种能够通过使用多步局部干蚀刻装置将能够以高生产量将有源硅层平坦化为目标物的层厚度并达到所需精度的SOI晶片的局部干式蚀刻方法，其中该装置包括第一和第二真空各直径喷嘴，直径大于直径喷嘴的直径大的喷嘴;活塞种气体发生器，用于产生从每个喷嘴吹出的活化物质气体，每个喷嘴设置在每个喷嘴中的真空室，用于提供SOI晶片和每个喷嘴之间的相对速度，以进行扫描和输送装置，其中在第一真空室中蚀刻SOI流体的活性硅层以去除表面不均匀性和活性硅层被蚀刻到第二真空室中所需的层厚度。

5. 发明申请

US20030199168A1 Local dry etching method 失效
标题翻译：局部干蚀刻法
公开(公告)号：US20030199168A1
公开(公告)日：2003-10-23
申请号：US10419199
申请日：2003-04-21
申请人： Speedfam Co., Ltd.
发明人： Michihiko Yanagisawa , Kazuyuki Tsuruoka
IPC分类号： H01L021/461
CPC分类号： H01J37/32009 , H01J37/32376 , H01L21/3065
摘要： In a local dry etching method, position-thickness data of a semiconductor wafer is previously obtained by measuring the wafer surface, components of position-thickness data shorter than a predetermined spatial wavelength are cut off by filtering and nozzle-wafer relative speed for planarizing the surface is calculated using the filtered data.
摘要翻译：在本地干蚀刻方法中，通过测量晶片表面预先获得半导体晶片的位置厚度数据，通过滤波和喷嘴 - 晶片相对速度来切割比预定空间波长短的位置厚度数据的分量，以平坦化使用滤波后的数据计算表面。

6. 发明申请

US20020173149A1 Local dry etching method 失效
标题翻译：局部干蚀刻法
公开(公告)号：US20020173149A1
公开(公告)日：2002-11-21
申请号：US10144800
申请日：2002-05-15
申请人： SPEEDFAM Co., Ltd.
发明人： Michihiko Yanagisawa , Tadayoshi Okuya
IPC分类号： H01L021/302 , H01L021/461
CPC分类号： H01J37/32192 , H01J37/32357 , H01J37/32366 , H01L21/3065
摘要： In a local dry etching method of the invention, a surface of a representative wafer sampled from a lot is test etched, each wafer of which is sliced from the same ingot, and initial data of recesses and projections of which is previously known, recesses and projections of the representative wafer is measured after test etched, an etching profile is derived from the initial data and measured data and then respective wafer surfaces of the lot are etched in condition calculated by using at least the derived etching profile.
摘要翻译：在本发明的局部干式蚀刻方法中，从大量采样的代表性晶片的表面被测试蚀刻，其每个晶片从相同的晶锭切片，并且其凹凸的初始数据预先已知，凹槽和在测试蚀刻后测量代表晶片的投影，从初始数据和测量数据导出蚀刻轮廓，然后在至少使用所得到的蚀刻轮廓计算的条件下蚀刻批次的相应晶片表面。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式