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1. 发明公开

US20240213089A1 INTEGRATED ATMOSPHERIC PLASMA TREATMENT STATION IN PROCESSING TOOL 审中-公开
公开(公告)号：US20240213089A1
公开(公告)日：2024-06-27
申请号：US18556978
申请日：2022-04-20
申请人： Lam Research Corporation
发明人： Navaneetha Krishnan SUBBAIYAN , Patrick LITTLE , Daniel Mark DINNEEN , Shantinath GHONGADI
IPC分类号： H01L21/768 , H01J37/32 , H01L21/02 , H01L21/67 , H01L21/677
CPC分类号： H01L21/76862 , H01J37/32376 , H01J37/3244 , H01J37/32825 , H01L21/67167 , H01L21/6723 , H01L21/67745 , H01L21/76873 , H01L21/02068
摘要： An atmospheric plasma treatment station is integrated in a semiconductor process tool. The atmospheric plasma treatment station directly interfaces with a deposition chamber of the semiconductor process tool without adding to the footprint or form factor of the semiconductor process tool. The atmospheric plasma treatment station includes a movable atmospheric plasma source such as a linear head for scanning across a surface of a substrate. The atmospheric plasma treatment station provides an enclosed space in a controlled environment with non-reactive gas flowing through the enclosed space. Process gases may be supplied to the linear head based on a surface condition of the substrate being treated.

2. 发明授权

US09190248B2 Dynamic electrode plasma system 有权
标题翻译：动态电极等离子体系统
公开(公告)号：US09190248B2
公开(公告)日：2015-11-17
申请号：US14020793
申请日：2013-09-07
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： James P. Buonodono
IPC分类号： C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32357 , H01J37/32376 , H01J37/32422 , H01J37/32541 , H01J37/32568
摘要： A system for processing a substrate includes a plasma chamber to generate a plasma therein. The system also includes a process chamber to house the substrate, where the process chamber is adjacent the plasma chamber. The system also includes a rotatable extraction electrode disposed between the plasma chamber and substrate, where the rotatable extraction electrode is configured to extract an ion beam from the plasma, and configured to scan the ion beam over the substrate without movement of the substrate by rotation about an extraction electrode axis.
摘要翻译：用于处理衬底的系统包括在其中产生等离子体的等离子体室。该系统还包括处理室以容纳衬底，其中处理室与等离子体室相邻。该系统还包括设置在等离子体室和衬底之间的可旋转的提取电极，其中可旋转的提取电极被配置为从等离子体提取离子束，并且被配置成扫描离子束在衬底上，而不会通过围绕提取电极轴。

3. 发明授权

US09111729B2 Small plasma chamber systems and methods 有权
标题翻译：小等离子体室系统和方法
公开(公告)号：US09111729B2
公开(公告)日：2015-08-18
申请号：US12957923
申请日：2010-12-01
申请人： Richard Gottscho , Rajinder Dhindsa , Mukund Srinivasan
发明人： Richard Gottscho , Rajinder Dhindsa , Mukund Srinivasan
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J7/24 , H01J37/32 , H01L21/67 , H01L21/687
CPC分类号： H01J37/32366 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/513 , H01J37/32082 , H01J37/32137 , H01J37/32376 , H01L21/6719 , H01L21/68764 , H01L21/68771 , H01L21/68785
摘要： A plasma etch processing tool is disclosed. The plasma etch processing tool, comprising a substrate support for supporting a substrate having a substrate surface area, a processing head including a plasma microchamber having an open side that is oriented over the substrate support, the open side of the plasma microchamber having a process area that is less than the substrate surface area, a sealing structure defined between the substrate support and the processing head and a power supply connected to the plasma microchamber and the substrate support. A method for performing a plasma etch is also disclosed.
摘要翻译：公开了一种等离子体蚀刻处理工具。等离子体蚀刻处理工具，包括用于支撑具有衬底表面积的衬底的衬底支撑件，包括具有定向在衬底支撑件上的开放侧的等离子体微室的处理头，等离子体微室的开放侧具有处理区域小于衬底表面积，限定在衬底支撑件和处理头之间的密封结构以及连接到等离子体微室和衬底支撑件的电源。还公开了一种用于执行等离子体蚀刻的方法。

4. 发明授权

US08703613B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08703613B2
公开(公告)日：2014-04-22
申请号：US13582557
申请日：2011-05-11
申请人： Tomohiro Okumura , Ichiro Nakayama , Mitsuo Saitoh
发明人： Tomohiro Okumura , Ichiro Nakayama , Mitsuo Saitoh
IPC分类号： H01L21/44 , H01L27/14
CPC分类号： H05H1/30 , H01J37/3211 , H01J37/32376 , H01J37/32825 , H01L21/324
摘要： A base material is placed on a base material placement face of a base material placement table. An inductively coupled plasma torch unit is structured with a cylindrical chamber structured with a cylinder made of an insulating material and provided with a rectangular slit-like plasma jet port, and lids closing opposing ends of the cylinder, a gas jet port that supplies gas into the cylindrical chamber, and a solenoid coil that generates a high frequency electromagnetic field in the cylindrical chamber. By a high frequency power supply supplying a high frequency power to the solenoid coil, plasma is generated in the cylindrical chamber, and the plasma is emitted from the plasma jet port to the base material. While relatively shifting the plasma torch unit and the base material placement table, a base material surface can be subjected to heat treatment.
摘要翻译：基材放置在基材放置台的基材放置面上。电感耦合等离子体焰炬单元构造为具有由绝缘材料构成的圆柱形腔室，该圆柱形腔体由绝缘材料构成，并设置有矩形裂缝状等离子体喷射口，并且盖住气缸的相对端部，气体喷射口将气体供应到圆柱形腔室和在圆柱形腔室中产生高频电磁场的螺线管线圈。通过向螺线管线圈提供高频电力的高频电源，在圆筒形室中产生等离子体，等离子体从等离子体喷射口发射到基体材料。在相对移动等离子体焰炬单元和基材放置台的同时，可以对基材表面进行热处理。

5. 发明申请

US20110209829A1 SURFACE TREATMENT APPARATUS 审中-公开
标题翻译：表面处理设备
公开(公告)号：US20110209829A1
公开(公告)日：2011-09-01
申请号：US13003161
申请日：2009-09-16
申请人： Takashi Umeoka , Hirofumi Yagisawa , Satoshi Mayumi
发明人： Takashi Umeoka , Hirofumi Yagisawa , Satoshi Mayumi
IPC分类号： C23F1/08
CPC分类号： H01J37/32376 , H01J37/3244 , H01J37/32449 , H01J37/32761 , H01J37/32834 , H01L21/3065 , H01L21/67051 , H01L21/6776
摘要： To stabilize a gas flow at an opening which is provided in a treatment housing for surface treatment, and through which an object is carried in or out. An object 9 is carried through a carry-in opening 13 into a treatment housing 10 along a conveying direction and placed in a treatment space 19. A treatment gas is supplied by a supply system 30 into the treatment space 19 and the object 9 is subjected to surface treatment. The object 9 is carried out through a carry-out opening 14. An exhaust system 40 discharges gas from the treatment housing 10. Each of the openings 13 and 14 is defined by a pair of flow-rectifying faces 17 and 18, which face each other with an interval D therebetween in a direction perpendicular to the conveying direction. A depth L of the openings 13 and 14 along the conveying direction is twice or more, and more preferably six or more, of the interval D.
摘要翻译：为了稳定在设置在用于表面处理的处理壳体中的开口处的气体流动，并且物体被携带在外部。物体9沿着输送方向通过进入口13被输送到处理壳体10中并放置在处理空间19中。处理气体由供给系统30供给到处理空间19中，物体9受到进行表面处理。物体9通过进出口14进行。排气系统40从处理壳体10排出气体。开口13和14中的每一个由一对流动整流面17和18限定，每个流动整流面17和18面对每个另一个在与输送方向垂直的方向上具有间隔D。沿着输送方向的开口13,14的深度L是间隔D的两倍以上，更优选为6以上。

6. 发明申请

US20110174333A1 PROCESS AND INSTALLATION FOR SURFACE PREPARATION BY DIELECTRIC BARRIER DISCHARGE 有权
标题翻译：电介质放电的表面处理工艺及其安装
公开(公告)号：US20110174333A1
公开(公告)日：2011-07-21
申请号：US13054311
申请日：2009-07-16
申请人： Eric Tixhon , Joseph Leclercq , Eric Michel
发明人： Eric Tixhon , Joseph Leclercq , Eric Michel
IPC分类号： C25F1/00
CPC分类号： B08B7/0035 , H01J37/32009 , H01J37/32348 , H01J37/32376 , H05H1/2406 , H05H2001/2412
摘要： A process for surface preparation of a substrate (2), which comprises introducing or running a substrate (2) into a reaction chamber (6, 106). A dielectric barrier (14, 114) is placed between electrodes (1, 10, 110). A high-frequency electrical voltage is generated, to generate filamentary plasma (12, 112). Molecules (8, 108) are introduced into the reaction chamber (6, 106). Upon contact with the plasma, they generate active species typical of reacting with the surface of the substrate. An adjustable inductor (L) placed in parallel with the inductor of the installation is employed to reduce the phase shift between the voltage and the current generated and to increase the time during which the current flows in the plasma (12, 112).
摘要翻译：一种用于表面制备基底（2）的方法，其包括将基底（2）引入或运行到反应室（6,106）中。介电阻挡层（14,114）被放置在电极（1,10,110）之间。产生高频电压，以产生丝状等离子体（12,112）。将分子（8,108）引入反应室（6,106）中。与等离子体接触时，它们产生典型的与基底表面反应的活性物质。采用与设备的电感并联放置的可调电感器（L）来减小所产生的电压和电流之间的相移并增加电流在等离子体（12,112）中流动的时间。

7. 发明申请

US20090242520A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20090242520A1
公开(公告)日：2009-10-01
申请号：US12410672
申请日：2009-03-25
申请人： Yusuke HIRAYAMA
发明人： Yusuke HIRAYAMA
IPC分类号： B23K10/00
CPC分类号： H01J37/32376
摘要： A plasma processing apparatus includes a local plasma generator, provided to face a mounting table for mounting thereon a substrate to be processed in an airtight processing chamber, for allowing a plasma to locally react on the substrate to be processed; and a moving unit for moving the local plasma generator. The local plasma generator has an offset gas discharge mechanism for discharging an offset gas which offsets reaction of a plasma of a gas discharged from an inside of the local plasma generator.
摘要翻译：一种等离子体处理装置，包括：本体等离子体发生器，其设置在面对安装台，用于在气密处理室中安装待处理的基板，用于允许等离子体在待处理的基板上局部反应; 以及用于移动局部等离子体发生器的移动单元。局部等离子体发生器具有用于排出偏移气体的偏移气体排出机构，其抵消从局部等离子体发生器的内部排放的气体的等离子体的反应。

8. 发明申请

US20060231031A1 Method and apparatus for treating a substrate 失效
标题翻译：用于处理基材的方法和设备
公开(公告)号：US20060231031A1
公开(公告)日：2006-10-19
申请号：US10538652
申请日：2003-12-12
申请人： Franciscus Dings , Marinus Franciscus Evers , Michael Adrianus Hompus , Martin Bijker
发明人： Franciscus Dings , Marinus Franciscus Evers , Michael Adrianus Hompus , Martin Bijker
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： H01J37/32376 , C23C16/04 , C23C16/50 , C23C16/513
摘要： A method for treating a surface of at least one substrate, wherein the at least one substrate is placed in a process chamber, wherein the pressure in the process chamber is relatively low, wherein a plasma is generated by at least one plasma source, wherein, during the treatment, at least one plasma source (3) and/or at least one optionally provided treatment fluid supply source is moved relative to the substrate surface. The invention further provides an apparatus for treating a surface of at least one substrate, wherein the apparatus is provided with a process chamber and at least one plasma source, wherein the at least one plasma source (3) and/or at least one optionally provided treatment fluid supply source is movably arranged.
摘要翻译：一种用于处理至少一个衬底的表面的方法，其中所述至少一个衬底被放置在处理室中，其中处理室中的压力相对较低，其中通过至少一个等离子体源产生等离子体，其中，在处理期间，相对于衬底表面移动至少一个等离子体源（3）和/或至少一个任选提供的处理流体供应源。本发明还提供了一种用于处理至少一个基底的表面的装置，其中所述装置设置有处理室和至少一个等离子体源，其中所述至少一个等离子体源（3）和/或至少一个等离子体源处理液供应源可移动地布置。

9. 发明授权

US07056416B2 Atmospheric pressure plasma processing method and apparatus 失效
标题翻译：大气压等离子体处理方法及装置
公开(公告)号：US07056416B2
公开(公告)日：2006-06-06
申请号：US10365449
申请日：2003-02-13
申请人： Tomohiro Okumura , Tadashi Kimura , Yoichiro Yashiro , Kenichi Sato , Mitsuo Saitoh
发明人： Tomohiro Okumura , Tadashi Kimura , Yoichiro Yashiro , Kenichi Sato , Mitsuo Saitoh
IPC分类号： C23F1/02 , C23C14/00 , C23C16/00
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32376 , H01J37/32935 , H05H1/2406 , H05H2001/2412
摘要： Provided is a plasma processing method for generating microplasma in a space of a microplasma source arranged in the vicinity of an object to be processed by supplying gas to the space and supplying electric power to a member located in the vicinity of the space, making activated particles emitted from an opening of the microplasma source joined to the space act on the object, and forming a fine linear portion on the object. The fine linear portion is formed on the object while flowing the gas to the neighborhood of the opening along the lengthwise direction of the fine linear portion parallel to the object.
摘要翻译：本发明提供一种等离子体处理方法，其通过向所述空间供给气体而向位于所述空间附近的构件供给电力而在所述待处理对象物附近的微型空间的空间中产生微量等离子体处理方法，从连接到空间的微血浆源的开口发射作用在物体上，并且在物体上形成精细的直线部分。细长的直线部分在物体上形成，同时使气体沿平行于物体的细线形部分的长度方向流过开口附近。

10. 发明申请

US20180144906A1 Methods for Processing Substrates Using Small Plasma Chambers 审中-公开
公开(公告)号：US20180144906A1
公开(公告)日：2018-05-24
申请号：US15877092
申请日：2018-01-22
申请人： Lam Research Corporation
发明人： Richard Gottscho , Rajinder Dhindsa , Mukund Srinivasan
IPC分类号： H01J37/32 , H01L21/687 , H01L21/67 , C23C16/50 , C23C16/513 , C23C16/505 , C23C16/503
CPC分类号： H01J37/32366 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/513 , H01J37/32082 , H01J37/32137 , H01J37/32376 , H01L21/6719 , H01L21/68764 , H01L21/68771 , H01L21/68785
摘要： A plasma processing method is provided. The method includes receiving a substrate in a substrate support that is configured to be movable along a linear path. The method includes providing at least one process gas into a plasma microchamber. The plasma microchamber is disposed in a processing head having a length that is at least longer than a diameter of the substrate, and said length is perpendicular to said linear path. The method includes generating a plasma in the plasma microchamber by applying power to the plasma microchamber and applying a bias power to the substrate support. The plasma microchamber has an open side process area that is oriented and directed over a surface to be processed, and the open side process area is less than an area of the surface to be processed. The method includes translating said substrate support along said linear path while said microchamber generates the plasma in the plasma microchamber for exposing said plasma over the substrate. The translating of said substrate support along the linear path while generating said plasma via said microchamber provides for exposing said plasma across the substrate. The plasma is used for either depositing or etching a material.

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