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1. 发明授权

US08421527B2 Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件
公开(公告)号：US08421527B2
公开(公告)日：2013-04-16
申请号：US13562157
申请日：2012-07-30
申请人： Toshio Sasaki , Kazuki Fukuoka , Ryo Mori , Yoshihiko Yasu
发明人： Toshio Sasaki , Kazuki Fukuoka , Ryo Mori , Yoshihiko Yasu
IPC分类号： G05F1/10
CPC分类号： H03K19/0016 , G06F1/3203 , G06F1/3287 , H01L27/0207 , H01L27/088 , H01L2224/48091 , H01L2924/13091 , Y02D10/171 , Y02D50/20 , H01L2924/00014 , H01L2924/00
摘要： The present invention is directed to perform fine low-voltage control without largely increasing the circuit layout area in a low-power consumption structure. In the case of shifting a region to a low-speed mode, a system controller outputs a request signal and an enable signal to a power switch controller and a low-power drive circuit, respectively, to turn off a power switch and to perform a control so that the voltage level of a virtual reference potential becomes about 0.2 V to about 0.3V. The region operates on voltages between a power supply voltage and a virtual reference potential, so that it is controlled in the low-speed mode.
摘要翻译：本发明旨在在低功耗结构中大幅度地提高电路布局面积的同时执行精细的低电压控制。在将区域移动到低速模式的情况下，系统控制器分别向功率开关控制器和低功率驱动电路输出请求信号和使能信号，以关闭电源开关并执行控制使得虚拟参考电位的电压电平变为约0.2V至约0.3V。该区域在电源电压和虚拟参考电位之间的电压下工作，使得其在低速模式下被控制。

2. 发明申请

US20120013382A1 Semiconductor Integrated Circuit Device 失效
公开(公告)号：US20120013382A1
公开(公告)日：2012-01-19
申请号：US13244553
申请日：2011-09-25
申请人： Toshio SASAKI , Kazuki Fukuoka , Ryo Mori , Yoshihiko Yasu
发明人： Toshio SASAKI , Kazuki Fukuoka , Ryo Mori , Yoshihiko Yasu
IPC分类号： H03L5/00
CPC分类号： H03K19/0016 , G06F1/3203 , G06F1/3287 , H01L27/0207 , H01L27/088 , H01L2224/48091 , H01L2924/13091 , Y02D10/171 , Y02D50/20 , H01L2924/00014 , H01L2924/00
摘要： The present invention is directed to perform fine low-voltage control without largely increasing the circuit layout area in a low-power consumption structure. In the case of shifting a region to a low-speed mode, a system controller outputs a request signal and an enable signal to a power switch controller and a low-power drive circuit, respectively, to turn off a power switch and to perform a control so that the voltage level of a virtual reference potential becomes about 0.2 V to about 0.3V. The region operates on voltages between a power supply voltage and a virtual reference potential, so that it is controlled in the low-speed mode.

3. 发明授权

US08379425B2 Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件
公开(公告)号：US08379425B2
公开(公告)日：2013-02-19
申请号：US12714309
申请日：2010-02-26
申请人： Kazuki Fukuoka , Yasuto Igarashi , Ryo Mori , Yoshihiko Yasu , Toshio Sasaki
发明人： Kazuki Fukuoka , Yasuto Igarashi , Ryo Mori , Yoshihiko Yasu , Toshio Sasaki
IPC分类号： H02M1/00 , G06F1/26
CPC分类号： H03K5/00 , H01L27/0203 , H01L27/0207 , H01L27/0928 , H01L27/11807 , H03K3/00 , H03K19/0016
摘要： Efficient reduction in power consumption is achieved by combinational implementation of a power cutoff circuit technique using power supply switch control and a DVFS technique for low power consumption. A power supply switch section fed with power supply voltage, a circuit block in which a power cutoff is performed by the power supply switch section, and a level shifter are formed in a DEEP-NWELL region formed over a semiconductor substrate. Another power supply switch section fed with another power supply voltage, a circuit block in which a power cutoff is performed by the power supply switch section, and a level shifter are formed in another DEEP-NWELL region formed over the semiconductor substrate. In this arrangement, there arises no possibility of short-circuiting between different power supplies via each DEEP-NWELL region formed over the semiconductor substrate.
摘要翻译：通过使用电源开关控制和DVFS技术组合实现断电电路技术实现功耗的有效降低，实现低功耗。在半导体基板上形成的DEEP-NWELL区域中，形成供给电源电压的电源开关部，由电源开关部进行电源切断的电路块和电平移位器。供给另一电源电压的另一个电源开关部分，由电源开关部分执行电源切断的电路块和电平移位器形成在形成在半导体衬底上的另一个DEEP-NWELL区域中。在这种布置中，不存在通过半导体衬底上形成的每个DEEP-NWELL区域在不同电源之间短路的可能性。

4. 发明授权

US08044709B2 Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件
公开(公告)号：US08044709B2
公开(公告)日：2011-10-25
申请号：US12608105
申请日：2009-10-29
申请人： Toshio Sasaki , Kazuki Fukuoka , Ryo Mori , Yoshihiko Yasu
发明人： Toshio Sasaki , Kazuki Fukuoka , Ryo Mori , Yoshihiko Yasu
IPC分类号： G05F1/10
CPC分类号： H03K19/0016 , G06F1/3203 , G06F1/3287 , H01L27/0207 , H01L27/088 , H01L2224/48091 , H01L2924/13091 , Y02D10/171 , Y02D50/20 , H01L2924/00014 , H01L2924/00
摘要： The present invention is directed to perform fine low-voltage control without largely increasing the circuit layout area in a low-power consumption structure. In the case of shifting a region to a low-speed mode, a system controller outputs a request signal and an enable signal to a power switch controller and a low-power drive circuit, respectively, to turn off a power switch and to perform a control so that the voltage level of a virtual reference potential becomes about 0.2 V to about 0.3V. The region operates on voltages between a power supply voltage and a virtual reference potential, so that it is controlled in the low-speed mode.
摘要翻译：本发明旨在在低功耗结构中大幅度地提高电路布局面积的同时执行精细的低电压控制。在将区域移动到低速模式的情况下，系统控制器分别向功率开关控制器和低功率驱动电路输出请求信号和使能信号，以关闭电源开关并执行控制使得虚拟参考电位的电压电平变为约0.2V至约0.3V。该区域在电源电压和虚拟参考电位之间的电压下工作，使得其在低速模式下被控制。

5. 发明授权

US08253481B2 Semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件
公开(公告)号：US08253481B2
公开(公告)日：2012-08-28
申请号：US13244553
申请日：2011-09-25
申请人： Toshio Sasaki , Kazuki Fukuoka , Ryo Mori , Yoshihiko Yasu
发明人： Toshio Sasaki , Kazuki Fukuoka , Ryo Mori , Yoshihiko Yasu
IPC分类号： G05F1/10
CPC分类号： H03K19/0016 , G06F1/3203 , G06F1/3287 , H01L27/0207 , H01L27/088 , H01L2224/48091 , H01L2924/13091 , Y02D10/171 , Y02D50/20 , H01L2924/00014 , H01L2924/00
摘要： The present invention is directed to perform fine low-voltage control without largely increasing the circuit layout area in a low-power consumption structure. In the case of shifting a region to a low-speed mode, a system controller outputs a request signal and an enable signal to a power switch controller and a low-power drive circuit, respectively, to turn off a power switch and to perform a control so that the voltage level of a virtual reference potential becomes about 0.2 V to about 0.3V. The region operates on voltages between a power supply voltage and a virtual reference potential, so that it is controlled in the low-speed mode.
摘要翻译：本发明旨在在低功耗结构中大幅度地提高电路布局面积的同时执行精细的低电压控制。在将区域移动到低速模式的情况下，系统控制器分别向功率开关控制器和低功率驱动电路输出请求信号和使能信号，以关闭电源开关并执行控制使得虚拟参考电位的电压电平变为约0.2V至约0.3V。该区域在电源电压和虚拟参考电位之间的电压下工作，使得其在低速模式下被控制。

6. 发明申请

US20100219800A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 有权
标题翻译：半导体集成电路设备
公开(公告)号：US20100219800A1
公开(公告)日：2010-09-02
申请号：US12714309
申请日：2010-02-26
申请人： Kazuki FUKUOKA , Yasuto Igarashi , Ryo Mori , Yoshihiko Yasu , Toshio Sasaki
发明人： Kazuki FUKUOKA , Yasuto Igarashi , Ryo Mori , Yoshihiko Yasu , Toshio Sasaki
IPC分类号： G05F1/10
CPC分类号： H03K5/00 , H01L27/0203 , H01L27/0207 , H01L27/0928 , H01L27/11807 , H03K3/00 , H03K19/0016
摘要： Efficient reduction in power consumption is achieved by combinational implementation of a power cutoff circuit technique using power supply switch control and a DVFS technique for low power consumption. A power supply switch section fed with power supply voltage, a circuit block in which a power cutoff is performed by the power supply switch section, and a level shifter are formed in a DEEP-NWELL region formed over a semiconductor substrate. Another power supply switch section fed with another power supply voltage, a circuit block in which a power cutoff is performed by the power supply switch section, and a level shifter are formed in another DEEP-NWELL region formed over the semiconductor substrate. In this arrangement, there arises no possibility of short-circuiting between different power supplies via each DEEP-NWELL region formed over the semiconductor substrate.
摘要翻译：通过使用电源开关控制和DVFS技术组合实现断电电路技术实现功耗的有效降低，实现低功耗。在半导体基板上形成的DEEP-NWELL区域中，形成供给电源电压的电源开关部，由电源开关部进行电源切断的电路块和电平移位器。供给另一电源电压的另一个电源开关部分，由电源开关部分执行电源切断的电路块和电平移位器形成在形成在半导体衬底上的另一个DEEP-NWELL区域中。在这种布置中，不存在通过半导体衬底上形成的每个DEEP-NWELL区域在不同电源之间短路的可能性。

7. 发明申请

US20100123515A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 有权
标题翻译：半导体集成电路设备
公开(公告)号：US20100123515A1
公开(公告)日：2010-05-20
申请号：US12608105
申请日：2009-10-29
申请人： TOSHIO SASAKI , Kazuki Fukuoka , Ryo Mori , Yoshihiko Yasu
发明人： TOSHIO SASAKI , Kazuki Fukuoka , Ryo Mori , Yoshihiko Yasu
IPC分类号： G05F1/10
CPC分类号： H03K19/0016 , G06F1/3203 , G06F1/3287 , H01L27/0207 , H01L27/088 , H01L2224/48091 , H01L2924/13091 , Y02D10/171 , Y02D50/20 , H01L2924/00014 , H01L2924/00
摘要： The present invention is directed to perform fine low-voltage control without largely increasing the circuit layout area in a low-power consumption structure. In the case of shifting a region to a low-speed mode, a system controller outputs a request signal and an enable signal to a power switch controller and a low-power drive circuit, respectively, to turn off a power switch and to perform a control so that the voltage level of a virtual reference potential becomes about 0.2 V to about 0.3V. The region operates on voltages between a power supply voltage and a virtual reference potential, so that it is controlled in the low-speed mode.
摘要翻译：本发明旨在在低功耗结构中大幅度地提高电路布局面积的同时执行精细的低电压控制。在将区域移动到低速模式的情况下，系统控制器分别向功率开关控制器和低功率驱动电路输出请求信号和使能信号，以关闭电源开关并执行控制使得虚拟参考电位的电压电平变为约0.2V至约0.3V。该区域在电源电压和虚拟参考电位之间的电压下工作，使得其在低速模式下被控制。

8. 发明授权

US08400806B2 Semiconductor device 失效
公开(公告)号：US08400806B2
公开(公告)日：2013-03-19
申请号：US12972238
申请日：2010-12-17
申请人： Toshio Sasaki , Yoshihiko Yasu , Takashi Kuraishi , Ryo Mori
发明人： Toshio Sasaki , Yoshihiko Yasu , Takashi Kuraishi , Ryo Mori
IPC分类号： G11C5/02
CPC分类号： G11C5/145 , G11C5/025 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/49 , H01L2924/01015 , H01L2924/1306 , H01L2924/14 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A technology that makes it possible to reduce fluctuation in operating voltage for operating the circuits formed in the core region of a semiconductor device is provided. This semiconductor device is so arranged that the core region is divided into multiple functional blocks and power can be supplied and this power supply can be interrupted with respect to each of the divided functional blocks. The core region formed in the semiconductor chip is divided into multiple functional blocks. A power switch row in which multiple power switches are arranged is disposed in the boundaries between the divided functional blocks. These power switches have a function of controlling the supply of reference potential to each of functional blocks and the interruption of this supply. A feature of the invention is that reference pads are disposed directly above the power switch rows. This shortens the wires coupling together the reference pads and the power switches.

9. 发明申请

US20110085400A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20110085400A1
公开(公告)日：2011-04-14
申请号：US12972238
申请日：2010-12-17
申请人： TOSHIO SASAKI , Yoshihiko Yasu , Takashi Kuraishi , Ryo Mori
发明人： TOSHIO SASAKI , Yoshihiko Yasu , Takashi Kuraishi , Ryo Mori
IPC分类号： G11C5/14
CPC分类号： G11C5/145 , G11C5/025 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/49 , H01L2924/01015 , H01L2924/1306 , H01L2924/14 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A technology that makes it possible to reduce fluctuation in operating voltage for operating the circuits formed in the core region of a semiconductor device is provided. This semiconductor device is so arranged that the core region is divided into multiple functional blocks and power can be supplied and this power supply can be interrupted with respect to each of the divided functional blocks. The core region formed in the semiconductor chip is divided into multiple functional blocks. A power switch row in which multiple power switches are arranged is disposed in the boundaries between the divided functional blocks. These power switches have a function of controlling the supply of reference potential to each of functional blocks and the interruption of this supply. A feature of the invention is that reference pads are disposed directly above the power switch rows. This shortens the wires coupling together the reference pads and the power switches.
摘要翻译：提供了一种能够减少用于操作形成在半导体器件的芯区域中的电路的工作电压的波动的技术。该半导体器件被布置成使得芯区域被分成多个功能块并且可以提供电力，并且该电源可以相对于每个分割的功能块被中断。形成在半导体芯片中的芯区域被分成多个功能块。配置有多个功率开关的电源开关列设置在分割的功能块之间的边界。这些电源开关具有控制每个功能块的参考电位供应和该电源的中断的功能。本发明的特征在于，参考焊盘直接设置在功率开关行的正上方。这会缩短将参考焊盘和电源开关连接在一起的电线。

10. 发明申请

US20070215952A1 SEMICONDUCTOR INTEGRATED CIRCUIT 有权
标题翻译：半导体集成电路
公开(公告)号：US20070215952A1
公开(公告)日：2007-09-20
申请号：US11614619
申请日：2006-12-21
申请人： Osamu OZAWA , Toshio Sasaki , Ryo Mori , Takashi Kuraishi , Yoshihiko Yasu , Koichiro Ishibashi
发明人： Osamu OZAWA , Toshio Sasaki , Ryo Mori , Takashi Kuraishi , Yoshihiko Yasu , Koichiro Ishibashi
IPC分类号： H01L29/76
CPC分类号： H01L27/1203 , H01L21/823857
摘要： The semiconductor integrated circuit has so-called SOI type first MOS transistors (MNtk, MPtk) and second MOS transistors (MNtn, MPtn). The first MOS transistors have a gate isolation film thicker than that the second MOS transistors have. The first and second MOS transistors constitute a power-supply-interruptible circuit (6) and a power-supply-uninterrupted circuit (7). The power-supply-interruptible circuit has the first MOS transistors each constituting a power switch (10) between a source line (VDD) and a ground line (VSS), and the second MOS transistors connected in series with the power switch. A gate control signal for the first MOS transistors each constituting a power switch is made larger in amplitude than that for the second MOS transistors. This enables power-source cutoff control with a high degree of flexibility commensurate with the device isolation structure, which an SOI type semiconductor integrated circuit has originally.
摘要翻译：半导体集成电路具有所谓的SOI型第一MOS晶体管（MNtk，MPtk）和第二MOS晶体管（MNtn，MPtn）。第一MOS晶体管具有比第二MOS晶体管更厚的栅极隔离膜。第一和第二MOS晶体管构成电源可中断电路（6）和电源不间断电路（7）。电源中断电路具有构成源极线（VDD）和接地线（VSS）之间的电源开关（10）的第一MOS晶体管，以及与电源开关串联连接的第二MOS晶体管。构成功率开关的第一MOS晶体管的栅极控制信号的幅度比第二MOS晶体管的幅度大。这使得能够实现与SOI原理的SOI型半导体集成电路的器件隔离结构相当的高度灵活性的电源切断控制。

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