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    • 4. 发明授权
    • Ceria-based polish processes, and ceria-based slurries
    • 二氧化铈抛光工艺和二氧化铈基浆料
    • US07056192B2
    • 2006-06-06
    • US10711369
    • 2004-09-14
    • Rajasekhar VenigallaJames W. HannahTimothy M. McCormackRobert M. Merkling, Jr.
    • Rajasekhar VenigallaJames W. HannahTimothy M. McCormackRobert M. Merkling, Jr.
    • B24D3/00
    • C09K3/1463C09G1/02H01L21/31053
    • By adding silica to ceria-based CMP slurries the polish process starts much faster than without silica thereby eliminating dead time in the polish process and eliminating process instability caused by changes in the dead time with operating conditions. A slurry for performing chemical mechanical polishing (CMP) of patterned oxides (e.g., STI, PMD, ILD) on a substrate, comprises: ceria particles having a concentration of 1.0–5.0 wt % and silica particles having a concentration of 0.1–5.0 wt %. A ratio of ceria concentration to silica concentration (ceria:silica) is from approximately 10:1 to nearly 1:1 by weight. The ceria particles have a particle size of 150–250 nm, and the silica particles have a particle size of greater than 100 nm. The silica may be fumed or colloidal. The slurry has a pH of approximately 9.0.
    • 通过向二氧化铈基CMP浆料中添加二氧化硅,抛光过程比无二氧化硅快得多,从而消除抛光过程中的死区,并消除由于操作条件下死区时间变化引起的过程不稳定性。 用于在基材上进行图案化氧化物(例如STI,PMD,ILD)的化学机械抛光(CMP)的浆料包括:浓度为1.0-5.0重量%的二氧化铈颗粒和浓度为0.1-5.0重量%的二氧化硅颗粒 %。 二氧化铈浓度与二氧化硅浓度(二氧化铈:二氧化硅)的比率为约10:1至约1:1重量比。 二氧化铈粒子的粒径为150〜250nm,二氧化硅粒子的粒径大于100nm。 二氧化硅可以是热解或胶体的。 浆液的pH值约为9.0。
    • 6. 发明申请
    • CERIA-BASED POLISH PROCESSES, AND CERIA-BASED SLURRIES
    • 基于CERIA的抛光工艺和基于CERIA的流程
    • US20060057943A1
    • 2006-03-16
    • US10711369
    • 2004-09-14
    • Rajasekhar VenigallaJames HannahTimothy McCormackRobert Merkling
    • Rajasekhar VenigallaJames HannahTimothy McCormackRobert Merkling
    • B24B7/30
    • C09K3/1463C09G1/02H01L21/31053
    • By adding silica to ceria-based CMP slurries the polish process starts much faster than without silica thereby eliminating dead time in the polish process and eliminating process instability caused by changes in the dead time with operating conditions. A slurry for performing chemical mechanical polishing (CMP) of patterned oxides (e.g., STI, PMD, ILD) on a substrate, comprises: ceria particles having a concentration of 1.0-5.0 wt % and silica particles having a concentration of 0.1-5.0 wt %. A ratio of ceria concentration to silica concentration (ceria:silica) is from approximately 10:1 to nearly 1:1 by weight. The ceria particles have a particle size of 150-250 nm, and the silica particles have a particle size of greater than 100 nm. The silica may be fumed or colloidal. The slurry has a pH of approximately 9.0.
    • 通过向二氧化铈基CMP浆料中添加二氧化硅,抛光过程比无二氧化硅快得多,从而消除抛光过程中的死区,并消除由于操作条件下死区时间变化引起的过程不稳定性。 用于在基材上进行图案化氧化物(例如STI,PMD,ILD)的化学机械抛光(CMP)的浆料包括:浓度为1.0-5.0重量%的二氧化铈颗粒和浓度为0.1-5.0重量%的二氧化硅颗粒 %。 二氧化铈浓度与二氧化硅浓度(二氧化铈:二氧化硅)的比率为约10:1至约1:1重量比。 二氧化铈粒子的粒径为150〜250nm,二氧化硅粒子的粒径大于100nm。 二氧化硅可以是热解或胶体的。 浆液的pH值约为9.0。