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1. 发明授权

US08420491B2 Structure and method for replacement metal gate field effect transistors 有权
标题翻译：替代金属栅场效应晶体管的结构和方法
公开(公告)号：US08420491B2
公开(公告)日：2013-04-16
申请号：US12942097
申请日：2010-11-09
申请人： Henry K. Utomo , Unoh Kwon , Dimitri Anastassios Levedakis , Ravikumar Ramachandran , Viraj Yashawant Sardesai , Rajasekhar Venigalla
发明人： Henry K. Utomo , Unoh Kwon , Dimitri Anastassios Levedakis , Ravikumar Ramachandran , Viraj Yashawant Sardesai , Rajasekhar Venigalla
IPC分类号： H01L21/336
CPC分类号： H01L21/823807 , H01L21/28518 , H01L21/823814 , H01L21/823842 , H01L21/823871 , H01L29/165 , H01L29/665 , H01L29/6653 , H01L29/66545 , H01L29/66575 , H01L29/66628 , H01L29/66636 , H01L29/7848
摘要： A structure and method for replacement metal gate (RMG) field effect transistors is disclosed. Silicide regions are formed on a raised source-drain (RSD) structure. The silicide regions form a chemical mechanical polish (CMP) stopping layer during a CMP process used to expose the gates prior to replacement. Protective layers are then applied and etched in the formation of metal contacts.
摘要翻译：公开了一种替代金属栅极（RMG）场效应晶体管的结构和方法。硅化物区域形成在升高的源极 - 漏极（RSD）结构上。硅化物区域在用于在更换之前暴露栅极的CMP工艺期间形成化学机械抛光（CMP）停止层。然后在金属触点的形成中施加和蚀刻保护层。

2. 发明申请

US20120273798A1 METHOD OF FORMING SILICIDE CONTACTS OF DIFFERENT SHAPES SELECTIVELY ON REGIONS OF A SEMICONDUCTOR DEVICE 有权
标题翻译：在半导体器件领域中选择形成不同形状的硅氧烷接触的方法
公开(公告)号：US20120273798A1
公开(公告)日：2012-11-01
申请号：US13097459
申请日：2011-04-29
申请人： Emre Alptekin , Dong-Ick Lee , Viraj Yashawant Sardesai , Cung Do Tran , Jian Yu , Reinaldo Ariel Vega , Rajasekhar Venigalla
发明人： Emre Alptekin , Dong-Ick Lee , Viraj Yashawant Sardesai , Cung Do Tran , Jian Yu , Reinaldo Ariel Vega , Rajasekhar Venigalla
IPC分类号： H01L29/772
CPC分类号： H01L29/7833 , H01L21/28518 , H01L21/76805 , H01L21/76843 , H01L21/76855 , H01L23/485 , H01L29/0847 , H01L29/66636 , H01L29/7834 , H01L2924/0002 , H01L2924/00
摘要： A structure and method for fabricating silicide contacts for semiconductor devices is provided. Specifically, the structure and method involves utilizing chemical vapor deposition (CVD) and annealing to form silicide contacts of different shapes, selectively on regions of a semiconductor field effect transistor (FET), such as on source and drain regions. The shape of silicide contacts is a critical factor that can be manipulated to reduce contact resistance. Thus, the structure and method provide silicide contacts of different shapes with low contact resistance, wherein the silicide contacts also mitigate leakage current to enhance the utility and performance of FETs in low power applications.
摘要翻译：提供了一种用于制造用于半导体器件的硅化物触点的结构和方法。具体地，该结构和方法涉及利用化学气相沉积（CVD）和退火以在半导体场效应晶体管（FET）（例如源极和漏极区域）的区域上选择性地形成不同形状的硅化物接触。硅化物触点的形状是可以被操纵以降低接触电阻的关键因素。因此，该结构和方法提供具有低接触电阻的不同形状的硅化物触点，其中硅化物触点还减轻漏电流以增强低功率应用中的FET的效用和性能。

3. 发明申请

US20110195640A1 APPLYING DIFFERENT PRESSURES THROUGH SUB-PAD TO FIXED ABRASIVE CMP PAD 有权
标题翻译：将不同的压力通过辅助垫片施加到固定的磨料CMP垫
公开(公告)号：US20110195640A1
公开(公告)日：2011-08-11
申请号：US12702333
申请日：2010-02-09
申请人： Glenn L. Cellier , Laertis Economikos , Timothy M. McCormack , Rajasekhar Venigalla
发明人： Glenn L. Cellier , Laertis Economikos , Timothy M. McCormack , Rajasekhar Venigalla
IPC分类号： B24B1/00 , B24B7/20 , B24B37/00
CPC分类号： B24B37/16 , B24B37/22 , B24B37/245
摘要： A chemical mechanical polishing (CMP) system includes a rotating polishing table including a platen providing at least two pressure zones having different pressures; a sub-pad positioned on the platen, the sub-pad including a plurality of openings allowing for transmission of the different pressures therethrough; a fixed abrasive pad positioned on the sub-pad; and a pressure-creating system sealingly coupled to the platen for creating a different pressure in the at least two pressure zones, wherein the different pressures create topography on the fixed abrasive pad. A sub-pad and related method are also provided.
摘要翻译：化学机械抛光（CMP）系统包括旋转抛光台，其包括提供具有不同压力的至少两个压力区的压板; 位于所述压板上的子垫，所述子垫包括允许通过其传递不同压力的多个开口; 定位在子垫上的固定磨料垫; 以及密封地联接到所述压板的压力产生系统，用于在所述至少两个压力区域中产生不同的压力，其中所述不同压力在所述固定磨料垫上产生形貌。还提供了一个子垫和相关方法。

4. 发明授权

US07056192B2 Ceria-based polish processes, and ceria-based slurries 失效
标题翻译：二氧化铈抛光工艺和二氧化铈基浆料
公开(公告)号：US07056192B2
公开(公告)日：2006-06-06
申请号：US10711369
申请日：2004-09-14
申请人： Rajasekhar Venigalla , James W. Hannah , Timothy M. McCormack , Robert M. Merkling, Jr.
发明人： Rajasekhar Venigalla , James W. Hannah , Timothy M. McCormack , Robert M. Merkling, Jr.
IPC分类号： B24D3/00
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/31053
摘要： By adding silica to ceria-based CMP slurries the polish process starts much faster than without silica thereby eliminating dead time in the polish process and eliminating process instability caused by changes in the dead time with operating conditions. A slurry for performing chemical mechanical polishing (CMP) of patterned oxides (e.g., STI, PMD, ILD) on a substrate, comprises: ceria particles having a concentration of 1.0–5.0 wt % and silica particles having a concentration of 0.1–5.0 wt %. A ratio of ceria concentration to silica concentration (ceria:silica) is from approximately 10:1 to nearly 1:1 by weight. The ceria particles have a particle size of 150–250 nm, and the silica particles have a particle size of greater than 100 nm. The silica may be fumed or colloidal. The slurry has a pH of approximately 9.0.
摘要翻译：通过向二氧化铈基CMP浆料中添加二氧化硅，抛光过程比无二氧化硅快得多，从而消除抛光过程中的死区，并消除由于操作条件下死区时间变化引起的过程不稳定性。用于在基材上进行图案化氧化物（例如STI，PMD，ILD）的化学机械抛光（CMP）的浆料包括：浓度为1.0-5.0重量％的二氧化铈颗粒和浓度为0.1-5.0重量％的二氧化硅颗粒％。二氧化铈浓度与二氧化硅浓度（二氧化铈：二氧化硅）的比率为约10:1至约1:1重量比。二氧化铈粒子的粒径为150〜250nm，二氧化硅粒子的粒径大于100nm。二氧化硅可以是热解或胶体的。浆液的pH值约为9.0。

5. 发明申请

US20070049184A1 RETAINING RING STRUCTURE FOR ENHANCED REMOVAL RATE DURING FIXED ABRASIVE CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：固定磨料化学机械抛光期间增强移除速度的保持环结构
公开(公告)号：US20070049184A1
公开(公告)日：2007-03-01
申请号：US11161963
申请日：2005-08-24
申请人： Rajasekhar Venigalla , Timothy McCormack , Johannes Groschopf
发明人： Rajasekhar Venigalla , Timothy McCormack , Johannes Groschopf
IPC分类号： B24B29/00
CPC分类号： B24B37/32
摘要： A retaining ring structure for a chemical mechanical polishing (CMP) apparatus includes a plurality of protrusions formed on a bottom surface of a retaining ring configured for retaining a workpiece to be polished, the protrusions disposed so as to be in contact with a polishing pad during a polishing operation on the workpiece.
摘要翻译：用于化学机械抛光（CMP）装置的保持环结构包括形成在保持环的底表面上的多个突起，所述保持环被构造成用于保持待抛光的工件，所述突起设置成与抛光垫接触，对工件进行抛光操作。

6. 发明申请

US20060057943A1 CERIA-BASED POLISH PROCESSES, AND CERIA-BASED SLURRIES 失效
标题翻译：基于CERIA的抛光工艺和基于CERIA的流程
公开(公告)号：US20060057943A1
公开(公告)日：2006-03-16
申请号：US10711369
申请日：2004-09-14
申请人： Rajasekhar Venigalla , James Hannah , Timothy McCormack , Robert Merkling
发明人： Rajasekhar Venigalla , James Hannah , Timothy McCormack , Robert Merkling
IPC分类号： B24B7/30
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/31053
摘要： By adding silica to ceria-based CMP slurries the polish process starts much faster than without silica thereby eliminating dead time in the polish process and eliminating process instability caused by changes in the dead time with operating conditions. A slurry for performing chemical mechanical polishing (CMP) of patterned oxides (e.g., STI, PMD, ILD) on a substrate, comprises: ceria particles having a concentration of 1.0-5.0 wt % and silica particles having a concentration of 0.1-5.0 wt %. A ratio of ceria concentration to silica concentration (ceria:silica) is from approximately 10:1 to nearly 1:1 by weight. The ceria particles have a particle size of 150-250 nm, and the silica particles have a particle size of greater than 100 nm. The silica may be fumed or colloidal. The slurry has a pH of approximately 9.0.
摘要翻译：通过向二氧化铈基CMP浆料中添加二氧化硅，抛光过程比无二氧化硅快得多，从而消除抛光过程中的死区，并消除由于操作条件下死区时间变化引起的过程不稳定性。用于在基材上进行图案化氧化物（例如STI，PMD，ILD）的化学机械抛光（CMP）的浆料包括：浓度为1.0-5.0重量％的二氧化铈颗粒和浓度为0.1-5.0重量％的二氧化硅颗粒％。二氧化铈浓度与二氧化硅浓度（二氧化铈：二氧化硅）的比率为约10:1至约1:1重量比。二氧化铈粒子的粒径为150〜250nm，二氧化硅粒子的粒径大于100nm。二氧化硅可以是热解或胶体的。浆液的pH值约为9.0。

7. 发明授权

US08415250B2 Method of forming silicide contacts of different shapes selectively on regions of a semiconductor device 有权
标题翻译：在半导体器件的区域上选择性地形成不同形状的硅化物触点的方法
公开(公告)号：US08415250B2
公开(公告)日：2013-04-09
申请号：US13097459
申请日：2011-04-29
申请人： Emre Alptekin , Dong-Ick Lee , Viraj Yashawant Sardesai , Cung Do Tran , Jian Yu , Reinaldo Ariel Vega , Rajasekhar Venigalla
发明人： Emre Alptekin , Dong-Ick Lee , Viraj Yashawant Sardesai , Cung Do Tran , Jian Yu , Reinaldo Ariel Vega , Rajasekhar Venigalla
IPC分类号： H01L29/417
CPC分类号： H01L29/7833 , H01L21/28518 , H01L21/76805 , H01L21/76843 , H01L21/76855 , H01L23/485 , H01L29/0847 , H01L29/66636 , H01L29/7834 , H01L2924/0002 , H01L2924/00
摘要： A structure and method for fabricating silicide contacts for semiconductor devices is provided. Specifically, the structure and method involves utilizing chemical vapor deposition (CVD) and annealing to form silicide contacts of different shapes, selectively on regions of a semiconductor field effect transistor (FET), such as on source and drain regions. The shape of silicide contacts is a critical factor that can be manipulated to reduce contact resistance. Thus, the structure and method provide silicide contacts of different shapes with low contact resistance, wherein the silicide contacts also mitigate leakage current to enhance the utility and performance of FETs in low power applications.
摘要翻译：提供了一种用于制造用于半导体器件的硅化物触点的结构和方法。具体地，该结构和方法涉及利用化学气相沉积（CVD）和退火以在半导体场效应晶体管（FET）（例如源极和漏极区域）的区域上选择性地形成不同形状的硅化物接触。硅化物触点的形状是可以被操纵以降低接触电阻的关键因素。因此，该结构和方法提供具有低接触电阻的不同形状的硅化物触点，其中硅化物触点还减轻漏电流以增强低功率应用中的FET的效用和性能。

8. 发明申请

US20120112290A1 CONTROLLED CONTACT FORMATION PROCESS 有权
标题翻译：控制联系方式
公开(公告)号：US20120112290A1
公开(公告)日：2012-05-10
申请号：US12942097
申请日：2010-11-09
申请人： Henry K. Utomo , Unoh Kwon , Dimitri Anastassios Levedakis , Ravikumar Ramachandran , Viraj Yashawant Sardesai , Rajasekhar Venigalla
发明人： Henry K. Utomo , Unoh Kwon , Dimitri Anastassios Levedakis , Ravikumar Ramachandran , Viraj Yashawant Sardesai , Rajasekhar Venigalla
IPC分类号： H01L27/088 , H01L21/336
CPC分类号： H01L21/823807 , H01L21/28518 , H01L21/823814 , H01L21/823842 , H01L21/823871 , H01L29/165 , H01L29/665 , H01L29/6653 , H01L29/66545 , H01L29/66575 , H01L29/66628 , H01L29/66636 , H01L29/7848
摘要： A structure and method for replacement metal gate (RMG) field effect transistors is disclosed. Silicide regions are formed on a raised source-drain (RSD) structure. The silicide regions form a chemical mechanical polish (CMP) stopping layer during a CMP process used to expose the gates prior to replacement. Protective layers are then applied and etched in the formation of metal contacts.
摘要翻译：公开了一种替代金属栅极（RMG）场效应晶体管的结构和方法。硅化物区域形成在升高的源极 - 漏极（RSD）结构上。硅化物区域在用于在更换之前暴露栅极的CMP工艺期间形成化学机械抛光（CMP）停止层。然后在金属触点的形成中施加和蚀刻保护层。

9. 发明申请

US20080248626A1 SHALLOW TRENCH ISOLATION SELF-ALIGNED TO TEMPLATED RECRYSTALLIZATION BOUNDARY 审中-公开
标题翻译： SHOWOW TRENCH ISOLATION自对准至模拟重构边界
公开(公告)号：US20080248626A1
公开(公告)日：2008-10-09
申请号：US11697102
申请日：2007-04-05
申请人： Yaocheng Liu , Zhijiong Luo , Katherine L. Saenger , Chun-Yung Sung , Rajasekhar Venigalla , Haizhou Yin
发明人： Yaocheng Liu , Zhijiong Luo , Katherine L. Saenger , Chun-Yung Sung , Rajasekhar Venigalla , Haizhou Yin
IPC分类号： H01L21/762
CPC分类号： H01L21/26506 , H01L21/02667 , H01L21/187 , H01L21/76224
摘要： A hybrid orientation direct-semiconductor-bond (DSB) substrate with shallow trench isolation (STI) that is self-aligned to recrystallization boundaries is formed by patterning a hard mask layer for STI, a first amorphization implantation into openings in the hard mask layer, lithographic patterning of portions of a top semiconductor layer, a second amorphization implantation into exposed portions of the DSB substrate, recrystallization of the portions of the top semiconductor layer, and formation of STI utilizing the pattern in the hard mask layer. The edges of patterned photoresist for the second amorphization implantation are located within the openings in the patterned hard mask layer. Defective boundary regions formed underneath the openings in the hard mask layer are removed during the formation of STI to provide a leakage path free substrate. Due to elimination of a requirement for increased STI width, device density is increased compared to non-self-aligning process integration schemes.
摘要翻译：通过将STI的硬掩模层图案化，在硬掩模层的开口中进行第一非晶化注入，形成具有与重结晶边界自对准的浅沟槽隔离（STI）的混合取向直接半导体结合（DSB）顶部半导体层的部分的平版印刷图案化，第二非晶化注入到DSB衬底的暴露部分中，顶部半导体层的部分的再结晶，以及利用硬掩模层中的图案形成STI。用于第二非晶化注入的图案化光致抗蚀剂的边缘位于图案化的硬掩模层的开口内。在形成STI期间去除在硬掩模层中形成在开口下面的有缺陷的边界区域，以提供无泄漏路径的衬底。由于消除了对于增加的STI宽度的要求，与非自对准工艺集成方案相比，器件密度增加。

10. 发明授权

US08858300B2 Applying different pressures through sub-pad to fixed abrasive CMP pad 有权
标题翻译：通过子垫将不同的压力施加到固定的磨料CMP垫上
公开(公告)号：US08858300B2
公开(公告)日：2014-10-14
申请号：US12702333
申请日：2010-02-09
申请人： Glenn L. Cellier , Laertis Economikos , Timothy M. McCormack , Rajasekhar Venigalla
发明人： Glenn L. Cellier , Laertis Economikos , Timothy M. McCormack , Rajasekhar Venigalla
IPC分类号： B24B5/00 , B24B37/00 , B24B37/16 , B24B37/24 , B24B37/22
CPC分类号： B24B37/16 , B24B37/22 , B24B37/245
摘要： A chemical mechanical polishing (CMP) system includes a rotating polishing table including a platen providing at least two pressure zones having different pressures; a sub-pad positioned on the platen, the sub-pad including a plurality of openings allowing for transmission of the different pressures therethrough; a fixed abrasive pad positioned on the sub-pad; and a pressure-creating system sealingly coupled to the platen for creating a different pressure in the at least two pressure zones, wherein the different pressures create topography on the fixed abrasive pad. A sub-pad and related method are also provided.
摘要翻译：化学机械抛光（CMP）系统包括旋转抛光台，其包括提供具有不同压力的至少两个压力区的压板; 位于所述压板上的子垫，所述子垫包括允许通过其传递不同压力的多个开口; 定位在子垫上的固定磨料垫; 以及密封地联接到所述压板的压力产生系统，用于在所述至少两个压力区域中产生不同的压力，其中所述不同压力在所述固定磨料垫上产生形貌。还提供了一个子垫和相关方法。

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