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    • 2. 发明授权
    • Selective anisotropic reactive ion etching process for polysilicide
composite structures
    • 多晶硅复合结构的选择性各向异性反应离子蚀刻工艺
    • US4528066A
    • 1985-07-09
    • US628558
    • 1984-07-06
    • Robert M. Merkling, Jr.David Stanasolovich
    • Robert M. Merkling, Jr.David Stanasolovich
    • H01L21/302H01L21/28H01L21/3065H01L21/312H01L21/3213H01L21/306B44C1/22C03C15/00C03C25/06
    • H01L21/32137H01L21/312
    • A reactive ion etching technique is disclosed for etching a gate electrode out of layers of tungsten silicide and polycrystalline silicon without etching the underlying layer of silicon dioxide which serves as the gate dielectric and which covers the source and drain regions. The key feature of the invention, wherein the gate, which has been partially etched out of the tungsten silicide and polycrystalline silicon layers, is coated with poly tetra-fluoroethylene (teflon) to protect the sidewalls of the gate from being excessively etched in the lateral direction while the etching continues at the bottom on either side of the gate.The process is especially suitable for formation of tungsten silicide structures since no subsequent thermal steps are required which would otherwise cause a delamination of the tungsten silicide. In addition to eliminating undercutting, the process does not disturb the gate oxide over the source and drain areas, which would otherwise create a leaky device unsuitable for applications such as dynamic RAMs. The entire process can be carried out in a single pump down and therefore contamination levels can be minimized.
    • 公开了一种反应离子蚀刻技术,用于将栅极电极从硅化钨和多晶硅层之外蚀刻,而不会蚀刻用作栅极电介质并覆盖源极和漏极区域的二氧化硅的下层。 本发明的关键特征在于,已经部分地从硅化钨和多晶硅层中蚀刻出的栅极涂覆有聚四氟乙烯(聚四氟乙烯),以保护栅极的侧壁在侧面被过度蚀刻 而蚀刻在栅极的任一侧的底部继续蚀刻。 该方法特别适合于形成硅化钨结构,因为不需要随后的热步骤,否则会导致硅化钨的分层。 除了消除底切之外,该过程不会干扰源极和漏极区域上的栅极氧化物,否则将产生不适合于诸如动态RAM的应用的泄漏装置。 整个过程可以在单个泵中进行,因此污染水平可以最小化。
    • 3. 发明授权
    • Ceria-based polish processes, and ceria-based slurries
    • 二氧化铈抛光工艺和二氧化铈基浆料
    • US07056192B2
    • 2006-06-06
    • US10711369
    • 2004-09-14
    • Rajasekhar VenigallaJames W. HannahTimothy M. McCormackRobert M. Merkling, Jr.
    • Rajasekhar VenigallaJames W. HannahTimothy M. McCormackRobert M. Merkling, Jr.
    • B24D3/00
    • C09K3/1463C09G1/02H01L21/31053
    • By adding silica to ceria-based CMP slurries the polish process starts much faster than without silica thereby eliminating dead time in the polish process and eliminating process instability caused by changes in the dead time with operating conditions. A slurry for performing chemical mechanical polishing (CMP) of patterned oxides (e.g., STI, PMD, ILD) on a substrate, comprises: ceria particles having a concentration of 1.0–5.0 wt % and silica particles having a concentration of 0.1–5.0 wt %. A ratio of ceria concentration to silica concentration (ceria:silica) is from approximately 10:1 to nearly 1:1 by weight. The ceria particles have a particle size of 150–250 nm, and the silica particles have a particle size of greater than 100 nm. The silica may be fumed or colloidal. The slurry has a pH of approximately 9.0.
    • 通过向二氧化铈基CMP浆料中添加二氧化硅,抛光过程比无二氧化硅快得多,从而消除抛光过程中的死区,并消除由于操作条件下死区时间变化引起的过程不稳定性。 用于在基材上进行图案化氧化物(例如STI,PMD,ILD)的化学机械抛光(CMP)的浆料包括:浓度为1.0-5.0重量%的二氧化铈颗粒和浓度为0.1-5.0重量%的二氧化硅颗粒 %。 二氧化铈浓度与二氧化硅浓度(二氧化铈:二氧化硅)的比率为约10:1至约1:1重量比。 二氧化铈粒子的粒径为150〜250nm,二氧化硅粒子的粒径大于100nm。 二氧化硅可以是热解或胶体的。 浆液的pH值约为9.0。