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1. 发明授权

US4359773A Semiconductor lasers with selective driving circuit 失效
标题翻译：具有选择性驱动电路的半导体激光器
公开(公告)号：US4359773A
公开(公告)日：1982-11-16
申请号：US166045
申请日：1980-07-07
申请人： Robert G. Swartz , Ping K. Tien , Bruce A. Wooley
发明人： Robert G. Swartz , Ping K. Tien , Bruce A. Wooley
IPC分类号： H01S5/02 , H01S5/026 , H01S5/062 , H01S5/0683 , H01S5/40 , H04B10/00 , H01S3/10
CPC分类号： H01S5/0683 , H01S5/4031 , H04B10/032 , H01S5/02252 , H01S5/02284 , H01S5/0427 , H01S5/06213 , H01S5/06832
摘要： A plurality of semiconductor lasers (431-434) and a photodetector (120) are mounted on a silicon substrate (100) having an integrated circuit (101) fabricated therein. The integrated circuit includes a biasing circuit (405) for establishing a threshold current level that is dependent on the output of the photodetector and a modulator circuit (404) for providing a modulation current that is dependent on the digital values in an input signal. A semiconductor switch (406) selects only one of the plurality of semiconductor lasers for activation by the biasing and modulator circuits. The integrated circuit also includes a circuit (408) that operates the semiconductor switch so as to selectively activate a different one of the plurality of semiconductor lasers in response to either a predetermined output from said photodetector or in response to an external supervisory signal.
摘要翻译：多个半导体激光器（431-434）和光电检测器（120）安装在其上制造有集成电路（101）的硅衬底（100）上。集成电路包括用于建立取决于光电检测器的输出的阈值电流电平的偏置电路（405）和用于提供取决于输入信号中的数字值的调制电流的调制器电路（404）。半导体开关（406）仅选择多个半导体激光器中的一个来激活偏置和调制电路。集成电路还包括操作半导体开关的电路（408），以响应于来自所述光电检测器的预定输出或响应于外部监控信号来选择性地激活多个半导体激光器中的不同的半导体激光器。

2. 发明授权

US4318752A Heterojunction semiconductor laser fabrication utilizing laser radiation 失效
标题翻译：使用激光辐射的异质结半导体激光制造
公开(公告)号：US4318752A
公开(公告)日：1982-03-09
申请号：US150460
申请日：1980-05-16
申请人： Ping K. Tien
发明人： Ping K. Tien
IPC分类号： H01L21/225 , H01L21/22 , H01L21/263 , H01L21/268 , H01L29/205 , H01S5/00 , H01L21/203
CPC分类号： H01L21/22 , H01L21/268 , H01L29/205 , Y10S148/084
摘要： A stripe geometry is fabricated in a laser-diode structure having a plurality of epitaxial layers, including in tandem an undoped active semiconductor layer (3), a p-doped semiconductor layer (4), a moderately n-doped semiconductor layer (5) and a heavily p.sup.+ -doped layer (6) by focusing laser radiation on the n-doped semiconductor layer (5). The laser radiation is chosen to have a wavelength which passes through the p.sup.+ -doped layer (6) without absorption. When the laser radiation is absorbed in the n-doped layer, heat is generated which causes diffusion of p-dopant from the two adjacent layers to convert the exposed region to p-type. As the laser beam is scanned, a stripe having a forward pn junction for laser action is formed.
摘要翻译：条纹几何形状以具有多个外延层的激光二极管结构制造，包括串联未掺杂的有源半导体层（3），p掺杂半导体层（4），中等掺杂半导体层（5）和通过将激光辐射聚焦在n掺杂半导体层（5）上的重p +掺杂层（6）。选择激光辐射具有穿过p +掺杂层（6）而不吸收的波长。当激光辐射被吸收在n掺杂层中时，产生热量，其引起来自两个相邻层的p掺杂剂的扩散，以将曝光区域转换为p型。当扫描激光束时，形成具有用于激光作用的正向pn结的条纹。

3. 发明授权

US4242419A Epitaxial growth of superconductors such as Nb.sub.3 Ge superconductors 失效
标题翻译：超导体如Nb3Ge超导体的外延生长
公开(公告)号：US4242419A
公开(公告)日：1980-12-30
申请号：US865510
申请日：1977-12-29
申请人： Aly H. Dayem , Theodore H. Geballe , Chandra K. N. Patel , Ping K. Tien
发明人： Aly H. Dayem , Theodore H. Geballe , Chandra K. N. Patel , Ping K. Tien
IPC分类号： H01L39/24 , H01B1/02
CPC分类号： H01L39/2409 , Y10S505/806 , Y10S505/812 , Y10T29/49014 , Y10T428/12812 , Y10T428/12819
摘要： Nb.sub.3 Ge, Nb.sub.3 Al and Nb.sub.3 Si are prepared in A15 structures at the exact stoichiometric ratio with epitaxial growth on selected substrates. The phase diagrams of the materials are altered by this technique and only the A15 phase is stable at the stoichiometric ratios thus permitting attainment of higher and sharper transition temperatures.
摘要翻译： Nb3Ge，Nb3Al和Nb3Si在A15结构中以精确的化学计量比与所选衬底上的外延生长制备。通过该技术改变材料的相图，并且只有A15相以化学计量比稳定，从而可以获得更高和更尖锐的转变温度。

4. 发明授权

US4140362A Forming focusing diffraction gratings for integrated optics 失效
$Forming focusing diffraction gratings for integrated optics$
标题翻译：形成用于集成光学的聚焦衍射光栅
公开(公告)号：US4140362A
公开(公告)日：1979-02-20
申请号：US815721
申请日：1977-07-14
申请人： Ping K. Tien
发明人： Ping K. Tien
IPC分类号： G02B5/18 , G02B5/32 , G02B6/122 , G02B6/13 , G03H1/04 , H01S3/063
CPC分类号： G02B5/32 , H01S3/0635 , Y10S359/90
摘要： An apparatus is disclosed for making unchirped holographic diffraction gratings that are formed from curved lines in a thin film. The gratings so made focus as well as reflect light that is confined to the film incorporating the grating. SUBACKGROUND OF THE INVENTIONGratings have been incorporated in integrated optics devices for several purposes, including the fabrication of distributed feedback lasers, light-wave couplers, and band-rejection filters. Integrated-optics gratings known to the prior art were composed at straight lines, and therefore could not focus the light being processed. Gratings that combine focusing and diffraction were known to be desirable, but the prior art was unable to produce them.The closest prior art that has come to our attention is a method and apparatus for producing curved-line holographic gratings that have unequally spaced, or chirped, lines (U.S. Pat. No. 3,578,845, issued on May 18, 1971 to K. E. Brooks et al). This reference teaches the production of gratings that focus light that propagates into and out of the plane of the grating. It does not teach the relative orientation of laser beams and focal lines that are required in order to produce curved-line gratings that will function in integrated optics devices.SUMMARY OF THE INVENTIONThe invention relates to a method and apparatus for producing unchirped, curved-line, holographic diffraction gratings in a thin film, which gratings will focus as well as diffract light that is confined to the film in which the grating is formed. (In integrated optics, the film containing the light is called the optical waveguide, and the waveguide with a grating in it is called a corrugated waveguide.) The gratings are made by forming an interference pattern in a photosensitive material, fixing the interference pattern so formed and then using the fixed pattern as a mask for ion or chemical etching processes of conventional type to form corrugated waveguides.One feature of the invention is the use of two cylindrically focused beams of coherent optical radiation for writing holographic diffraction gratings, the focal lines of which beams are oriented in a predetermined manner with respect to each other and with respect to the grating being written.Another feature of the invention is the use of coplanar focal lines of the two beams oriented so that the plane which contains the focal lines also contains the axis of the grating, thereby providing uniform spacing between the grating lines.Further features and advantages of the invention will become apparent from a study of the detailed description and of the drawings.
摘要翻译： {PG，1公开了一种用于制造由薄膜中的曲线形成的非激光全息衍射光栅的装置。光栅使得聚焦以及反射限于结合光栅的膜的光。

5. 发明授权

US4136350A Epitaxial growth of dissimilar materials 失效
标题翻译：外来物质的外延生长
公开(公告)号：US4136350A
公开(公告)日：1979-01-23
申请号：US815720
申请日：1977-07-14
申请人： Ping K. Tien
发明人： Ping K. Tien
IPC分类号： H01L33/00 , G02F1/095 , H01L21/20 , H01L21/205 , H01L21/86 , H01L27/12 , H01L27/15 , H01L29/04 , H01L43/04 , H01S5/00 , H01L29/161
CPC分类号： H01L29/04 , G02F1/095 , H01L21/0242 , H01L21/02546 , H01L27/15
摘要： A method of epitaxial crystal growth is disclosed in which the lattice constants of adjacent layers are in the ratios of small integers other than one. This method permits the use of previously incompatible compounds, in particular the combination of magneto optic and electro optic elements on the same substrate.
摘要翻译：一种器件包括在另一材料（11）上外延生长的一种材料的层（12）。这些材料具有的晶格常数是除了单位以外的整数之比。例如，一种材料（12）可以是半导体，另一种是石榴石（11）。因此，磁光（15）和电光（13）器件可以组合在相同的衬底上以形成集成光学器件。

6. 发明授权

US4955028A Wavelength tunable composite cavity laser 失效
标题翻译：波长可调谐复合腔激光器
公开(公告)号：US4955028A
公开(公告)日：1990-09-04
申请号：US173488
申请日：1988-03-25
申请人： Rodney C. Alferness , Gadi Eisenstein , Uziel Koren , Ping K. Tien , Rodney S. Tucker , Matthew S. Whalen
发明人： Rodney C. Alferness , Gadi Eisenstein , Uziel Koren , Ping K. Tien , Rodney S. Tucker , Matthew S. Whalen
IPC分类号： G02B6/34 , H01S3/08 , H01S3/1055 , H01S5/14
CPC分类号： G02B6/022 , G02B6/02061 , G02B6/02066 , G02B6/02195 , H01S3/08009 , H01S3/1055 , H01S5/141 , H01S5/146
摘要： Wavelength tunability and single frequency output are achieved in a coherent light source employing an adjustably controllable reflector. The light source includes a gain medium coupled to a single-mode fiber having a partially reduced cladding region at a predetermined distance from the gain medium. A Bragg reflector is either formed on the reduced cladding region of the single-mode fiber or formed on an external element in close proximity to the reduced cladding region. A single resonant optical cavity is formed by placing another reflector on the side of the gain medium opposite the gain medium-to-fiber coupling. Wavelength tuning of the light source is accomplished by controllably adjusting the period or the Bragg reflector element.
摘要翻译：波长可调性和单频输出在采用可调节可控反射器的相干光源中实现。光源包括耦合到单模光纤的增益介质，其具有距离增益介质预定距离的部分减小的包层区域。布拉格反射器或者形成在单模光纤的还原包层区域上，或者形成在紧邻还原包层区域的外部元件上。通过在增益介质的相对于增益介质到光纤耦合的一侧放置另一个反射器来形成单个谐振光学腔。通过可控地调节周期或布拉格反射器元件来实现光源的波长调谐。

7. 发明授权

US4488038A Phototransistor for long wavelength radiation 失效
标题翻译：光电晶体管用于长波长辐射
公开(公告)号：US4488038A
公开(公告)日：1984-12-11
申请号：US367177
申请日：1982-04-12
申请人： Thomas R. Harrison , Ping K. Tien
发明人： Thomas R. Harrison , Ping K. Tien
IPC分类号： H01L27/14 , H01L27/144 , H01L27/146 , H01L29/772 , H01L31/10 , H01L31/108 , H01J40/14
CPC分类号： H01L29/7722 , H01L27/1443 , H01L31/108
摘要： A photodetector useful at long wavelengths where silicon normally is transparent. It includes a photodiode stage which comprises a silicide layer forming a Schottky-barrier junction with a silicon substrate and which is integrated with an amplification stage which uses a silicon transistor adapted to amplify the photovoltaic voltage derived by the photodiode stage. In the preferred embodiment, the silicide layer forms the grid of a permeable base transistor.
摘要翻译：一种在硅通常是透明的长波长下有用的光电探测器。它包括光电二极管阶段，其包括与硅衬底形成肖特基势垒结的硅化物层，并且与使用硅晶体管的放大级集成，该硅晶体管适于放大由光电二极管级导出的光电压。在优选实施例中，硅化物层形成可渗透的基极晶体管的栅极。

8. 发明授权

US4073675A Waveguiding epitaxial LiNbO.sub.3 films 失效
标题翻译：波导外延LiNbO {HD 3 {B film
公开(公告)号：US4073675A
公开(公告)日：1978-02-14
申请号：US707309
申请日：1976-07-21
申请人： Albert A. Ballman , Harold Brown , Raymond J. Martin , Ping K. Tien
发明人： Albert A. Ballman , Harold Brown , Raymond J. Martin , Ping K. Tien
IPC分类号： C30B11/00 , C30B19/00 , B01J17/24 , C01G35/00 , C01G1/00
CPC分类号： C30B19/00 , C30B11/00 , C30B29/30 , Y10S117/918
摘要： A process is described for making optical circuits on LiTaO.sub.3 substrates. The process involves putting down an epitaxial layer of LiNbO.sub.3 on the LiTaO.sub.3 substrates. Growth is preferably carried out on certain planes of the LiTaO.sub.3. These optical circuits are unique in that they are smooth, uniform in thickness and have a refractive index significantly larger than that of the substrate. This is advantageous in optical circuitry, since the optical modes in the circuits are quite distinct and can be coupled separately using such light sources as lasers and light emitting diodes.
摘要翻译：描述了在LiTaO 3基板上制造光电路的过程。该工艺包括在LiTaO3衬底上放下LiNbO3的外延层。生长优选在LiTaO 3的某些平面上进行。这些光学电路是独特的，因为它们光滑，厚度均匀且具有显着大于衬底的折射率。这在光学电路中是有利的，因为电路中的光学模式是非常不同的，并且可以使用诸如激光器和发光二极管的光源单独耦合。

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