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1. 发明授权

US4780724A Antenna with integral tuning element 失效
标题翻译：带有整体调谐元件的天线
公开(公告)号：US4780724A
公开(公告)日：1988-10-25
申请号：US853739
申请日：1986-04-18
申请人： Arvind K. Sharma , Paul J. Stabile
发明人： Arvind K. Sharma , Paul J. Stabile
IPC分类号： H01Q9/04 , H01Q1/38
CPC分类号： H01Q9/0442
摘要： A patch antenna, which may be one element of an antenna array, is formed on one broad surface of a semiconductor plate. A ground plane is formed on the second broad surface. This semiconductor is doped in regions near a periphery of the patch to define a semiconductor PN junction have electrode contacts to the patch and to the ground plane. The junction has capacitance which tunes the patch antenna. The characteristics of the junction are controlled by bias to selectively tune the patch antenna. The bias is a direct voltage in one embodiment of the invention. In another embodiment, the junction work function itself provides a bias which is controlled by temperature control of the diode.
摘要翻译：可以是天线阵列的一个元件的贴片天线形成在半导体板的一个宽表面上。在第二宽表面上形成接地平面。该半导体掺杂在贴片周边附近的区域中以限定半导体PN结，具有与贴片和接地平面的电极接触。接点具有调谐贴片天线的电容。通过偏置来控制结的特性以选择性地调整贴片天线。在本发明的一个实施例中，偏压是直流电压。在另一个实施例中，接合功能本身提供由二极管的温度控制来控制的偏压。

2. 发明授权

US4777490A Monolithic antenna with integral pin diode tuning 失效
标题翻译：整体式二极管调谐的单片天线
公开(公告)号：US4777490A
公开(公告)日：1988-10-11
申请号：US859032
申请日：1986-04-22
申请人： Arvind K. Sharma , Paul J. Stabile
发明人： Arvind K. Sharma , Paul J. Stabile
IPC分类号： H01Q9/04 , H01Q21/00 , H01Q19/06
CPC分类号： H01Q9/0442 , H01Q21/0093
摘要： Antennas chiefly intended for microwave and millimeter-wave use include geometric-shaped conductive patches on one broad surface of a planar semiconductor substrate. The other broad side of the substrate bears a conductive ground plane. Monolithic PIN diodes are formed by doping the substrate at various points between the conductive patch and the ground plane. Biasing arrangements affect the conduction of the PIN diodes thereby affecting or tuning the optimum operating frequency, the radiation pattern, and/or the impedance of the antenna. In a particularly advantageous configuration, the PIN diodes have lateral dimensions greater than or equal to one-tenth wavelength (.lambda./10) at the operating frequency. Distributed diodes have lower resistance and reactance than discrete or discrete monolithic diodes, thereby providing improved radiating characteristics, and have a relatively large power-handling capability which makes them useful for power transmission.
摘要翻译：主要用于微波和毫米波使用的天线包括在平面半导体衬底的一个宽表面上的几何形状的导电贴片。衬底的另一侧面具有导电接地平面。通过在导电贴片和接地平面之间的各个点处掺杂衬底来形成单片PIN二极管。偏置布置影响PIN二极管的导通，从而影响或调谐天线的最佳工作频率，辐射方向图和/或阻抗。在特别有利的配置中，PIN二极管在工作频率处具有大于或等于十分之一波长（λ/ 10）的横向尺寸。分散二极管比离散或分立的单片二极管具有更低的电阻和电抗，从而提供改进的辐射特性，并且具有相对较大的功率处理能力，使得它们对于功率传输是有用的。

3. 发明授权

US06320481B1 Compact phase shifter circuit using coupled lines 有权
标题翻译：使用耦合线路的紧凑型移相器电路
公开(公告)号：US06320481B1
公开(公告)日：2001-11-20
申请号：US09330679
申请日：1999-06-11
申请人： Arvind K. Sharma
发明人： Arvind K. Sharma
IPC分类号： H03H720
CPC分类号： H01P1/18
摘要： The present invention provides a switched-line phase shifter (300) for creating a differential phase shift between switched transmission paths (302, 304). A switched-line phase shifter (300) incorporates Schiffman sections (306, 308) of lengths which are non-integer multiples of quarter-wavelength. The lengths of the Schiffman sections (306, 308) are chosen such that no isolation points, which result from frequencies at which the effective electrical length of one of the transmission paths (302, 304) is an integer multiple of &lgr;/2, occur over the operating frequency range of the phase shifter (300). The present invention also provides a space-efficient implementation of a switched-line phase shifter (600) which utilizes switches (640, 642, 644) between Schiffman subsections (610, 630) to alternately combine and isolate the Schiffman subsections (610, 630) thereby alternately creating effective Schiffman sections of greater and lesser length respectively.
摘要翻译：本发明提供一种用于在切换传输路径（302,304）之间产生差分相移的开关线路移相器（300）。开关线相移器（300）包括长度为四分之一波长的非整数倍的长度的希夫曼（306）308。选择希夫曼部分（306,308）的长度，使得不产生由一个传输路径（302,304）的有效电长度为lambd / 2的整数倍的频率产生的隔离点超过移相器（300）的工作频率范围。本发明还提供了一种切换线路移相器（600）的空间效率实现，其利用希夫曼子段（610,630）之间的开关（640,642,644）交替地组合并隔离希夫曼子部分（610,630 ），从而分别交替地产生更大和更小长度的有效希夫曼部分。

4. 发明授权

US4782346A Finline antennas 失效
标题翻译： Finline天线
公开(公告)号：US4782346A
公开(公告)日：1988-11-01
申请号：US838583
申请日：1986-03-11
申请人： Arvind K. Sharma
发明人： Arvind K. Sharma
IPC分类号： H01Q13/08 , H01Q1/38
CPC分类号： H01Q13/085
摘要： An antenna includes a truncated waveguide capable of supporting propagation of electromagnetic energy having an electric field component. A dielectric plate is located partially within and partially without the waveguide of the truncation, and is oriented parallel to the E field and the longitudinal axis of the waveguide. An upper half of one side of the dielectric plate bears a conductor pattern defining half of a finline. The lower half of the other side of the dielectric plate bears a second conductor pattern defining the other half of a finline. In the region without the waveguide, the finline diverges to form a radiating portion with high gain. In another embodiment, a finline is formed on both sides of the dielectric plate.
摘要翻译：天线包括能够支持具有电场分量的电磁能的传播的截头波导。电介质板部分位于并且部分地不具有截头的波导，并且平行于E波段和波导的纵向轴线定向。电介质板的一侧的上半部具有限定金属线一半的导体图案。电介质板的另一侧的下半部具有限定金属线另一半的第二导体图案。在没有波导的区域中，鳍线发散以形成具有高增益的辐射部分。在另一个实施例中，在电介质板的两侧上形成金属线。

5. 发明授权

US4761625A Tunable waveguide bandpass filter 失效
标题翻译：可调波导带通滤波器
公开(公告)号：US4761625A
公开(公告)日：1988-08-02
申请号：US876487
申请日：1986-06-20
申请人： Arvind K. Sharma
发明人： Arvind K. Sharma
IPC分类号： H01P1/207 , H01P1/16 , H01P1/208 , H01P7/00
CPC分类号： H01P1/2016 , H01P1/207
摘要： A waveguide bandpass filter includes a fenestrated conductive septum which may be printed on a dielectric circuit board. The center frequency is tuned by a dielectric plate parallel with the septum and contiguous with the fenestrations which is movable in a direction orthogonal to the septum.
摘要翻译：波导带通滤波器包括可以印刷在介质电路板上的开窗式导电隔膜。中心频率由与隔膜平行的电介质板调节，并且与可在与隔膜正交的方向上移动的窗孔相邻。

6. 发明授权

US4616196A Microwave and millimeter wave switched-line type phase shifter including exponential line portion 失效
标题翻译：微波和毫米波开关线型移相器包括指数线部分
公开(公告)号：US4616196A
公开(公告)日：1986-10-07
申请号：US695523
申请日：1985-01-28
申请人： Arvind K. Sharma
发明人： Arvind K. Sharma
IPC分类号： H01P1/18
CPC分类号： H01P1/184
摘要： A switched-line type phase shifter employs a reference, uniform transmission line and a coupled exponential transmission line. The coupled exponential line network provides a different phase shift but provides a phase shift versus frequency characteristic that over a wide frequency band matches the reference line.
摘要翻译：开关线型移相器采用参考均匀传输线和耦合指数传输线。耦合指数线网络提供不同的相移，但是提供了在宽频带上匹配参考线的相移与频率特性。

7. 发明授权

US6072371A Quenchable VCO for switched band synthesizer applications 失效
标题翻译：用于切换频带合成器应用的可淬火VCO
公开(公告)号：US6072371A
公开(公告)日：2000-06-06
申请号：US876275
申请日：1997-06-16
申请人： Kevin W. Kobayashi , Duncan M. Smith , Aaron K. Oki , Arvind K. Sharma , Barry R. Allen
发明人： Kevin W. Kobayashi , Duncan M. Smith , Aaron K. Oki , Arvind K. Sharma , Barry R. Allen
IPC分类号： H03L7/099 , H03B5/02 , H03B5/18 , H03B5/00 , H03B5/12
CPC分类号： H03B5/1847
摘要： A quenchable VCO that is adapted to be used in switched band synthesizer applications. The VCO may be formed from a heterojunction bipolar transistor (HBT) in a common collector configuration. A quenching circuit which includes a p-i-n diode, is electrically coupled in series with the collector of the HBT. The p-i-n diode is adapted to be monolithically integrated with the HBT. Since the p-i-n diode is electrically connected to the collector of the HBT, as opposed to the base and emitter terminals of the HBT, which forms the main oscillator feedback loop, the Q-factor of the p-i-n diode will have relatively less loading on the phase noise of the HBT oscillator. Moreover, since the p-i-n diode is isolated from the base-emitter junction, the configuration will result in reduced frequency pulling and generation of spurious oscillation and transient effects due to the switching of the p-i-n diode quenched circuit. The use of a p-i-n diode for quenching of VCO also provides other inherent advantages over other types of semi-conductor switches, such as FET, Schottky diodes, PN diodes for quenchable VCO applications because p-i-n diodes are relative insensitive to RF and noise modulation. Because the p-i-n diode can be constructed from existing HBT collector-base MBE epitaxy layers, the quenching circuit can be manufactured relatively inexpensively.
摘要翻译：一种适用于切换频带合成器应用的可淬火VCO。 VCO可以由公共集电器配置中的异质结双极晶体管（HBT）形成。包括p-i-n二极管的淬火电路与HBT的集电器串联电耦合。 p-i-n二极管适于与HBT单片集成。由于pin二极管与HBT的集电极电连接，与形成主振荡器反馈环路的HBT的基极和发射极端子相反，因此pin二极管的Q因子在相位上的负载相对较小 HBT振荡器的噪声。此外，由于p-i-n二极管与基极 - 发射极结隔离，所以由于p-i-n二极管骤冷电路的切换，该结构将导致降低的频率拉动和寄生振荡的产生以及瞬态效应。与其他类型的半导体开关（例如FET，肖特基二极管，用于可淬灭的VCO应用的PN二极管）相比，使用p-i-n二极管来淬灭VCO也具有其他固有的优点，因为p-i-n二极管对RF和噪声调制相对不敏感。因为p-i-n二极管可以由现有的HBT集电极基极MBE外延层构成，所以可以相对廉价地制造淬火电路。

8. 发明授权

US4677393A Phase-corrected waveguide power combiner/splitter and power amplifier 失效
标题翻译：相位校正波导功率合成器/分离器和功率放大器
公开(公告)号：US4677393A
公开(公告)日：1987-06-30
申请号：US789750
申请日：1985-10-21
申请人： Arvind K. Sharma
发明人： Arvind K. Sharma
IPC分类号： H01P5/12 , H03F3/60
CPC分类号： H01P5/12 , H03F3/602
摘要： A waveguide power combiner or splitter (divider) includes a common waveguide having an axis skewed relative to the axes of a line array waveguides. A sectoral parabolic reflector is oriented with its focus at a port of the common waveguide with its axis parallel with the axes of the waveguides of the array for reflecting signals from the focal point to create a locus of constant phase at the ports of the waveguide array, whereby signal power originating at the common waveguide is divided equally among the waveguides of the waveguide array. A waveguide power amplifier includes a power splitter as described above, and an amplifier module located in each waveguide of the waveguide array to amplify the power therein to produce amplified signal in an output waveguide array. The amplified signals from the amplifier modules are combined by a second reflector driven by the output waveguide array and reflected to a common output port.
摘要翻译：波导功率组合器或分离器（分配器）包括具有相对于线阵列波导的轴倾斜的轴的公共波导。扇形抛物面反射器的焦点定位在公共波导的端口处，其轴线与阵列的波导的轴线平行，用于反射来自焦点的信号，以在波导阵列的端口处产生恒定相位的轨迹，由此在波导阵列的波导之间平均分配在公共波导处产生的信号功率。波导功率放大器包括如上所述的功率分配器和位于波导阵列的每个波导中的放大器模块，以放大其中的功率以在输出波导阵列中产生放大的信号。来自放大器模块的放大的信号由由输出波导阵列驱动的第二反射器组合并被反射到公共输出端口。

9. 发明授权

US4568893A Millimeter wave fin-line reflection phase shifter 失效
标题翻译：毫米波鳍线反射移相器
公开(公告)号：US4568893A
公开(公告)日：1986-02-04
申请号：US696748
申请日：1985-01-31
申请人： Arvind K. Sharma
发明人： Arvind K. Sharma
IPC分类号： H01P1/185 , H01P1/18
CPC分类号： H01P1/185
摘要： A millimeter wave reflection phase shifter employs a fin-line structure within a waveguide network which has a central leg and four arms which together form two symmetric Y-junctions. The fin-line forms a septum within the waveguide and includes a conductive layer having a central gap or slot therein which extends along the leg and into each of the arms. Means for shorting the slot arms disposed at one end of the leg controls the phase shift experienced by a signal propagating through the phase shifter. This phase shifter may provide multiple selectable phase shifts.
摘要翻译：毫米波反射移相器在波导网络内采用翅片线结构，其具有中心腿和四个臂，它们一起形成两个对称的Y形结。鳍线在波导内形成隔膜，并且包括其中具有中心间隙或狭槽的导电层，其沿着腿延伸到每个臂中。用于短路设置在腿的一端的槽臂的装置控制由通过移相器传播的信号所经历的相移。该移相器可以提供多个可选择的相移。

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