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1. 发明授权

US08902561B2 Electrostatic chuck with multi-zone control 有权
标题翻译：静电吸盘多区控制
公开(公告)号：US08902561B2
公开(公告)日：2014-12-02
申请号：US13364463
申请日：2012-02-02
申请人： Chia-Ho Chen , Ming Huei Lien , Shu-Fen Wu , Chih-Tsung Lee , You-Hua Chou
发明人： Chia-Ho Chen , Ming Huei Lien , Shu-Fen Wu , Chih-Tsung Lee , You-Hua Chou
IPC分类号： H01L21/683
CPC分类号： H01L21/6833 , H01L21/6831 , H02N13/00
摘要： An electrostatic chuck for clamping a warped workpiece has a clamping surface comprising a dielectric layer. The dielectric layer has a field and one or more zones formed of differing dielectric materials. One or more electrodes are coupled to a power supply, and a controller controls a clamping voltage supplied to the one or more electrodes via the power supply. An electrostatic attraction force associated with each of the field and one or more zones of the dielectric layer of the electrostatic chuck is induced, wherein the electrostatic attraction force varies based on the dielectric material of each of the field and one or more zones. The electrostatic attraction force is greater in the one or more zones than in the field, therein attracting warped regions of the workpiece to the clamping surface and clamping the warped workpiece to the clamping surface across a surface of the warped workpiece.
摘要翻译：用于夹紧翘曲工件的静电卡盘具有包括电介质层的夹紧表面。电介质层具有由不同介电材料形成的场和一个或多个区域。一个或多个电极耦合到电源，并且控制器经由电源控制提供给一个或多个电极的钳位电压。诱发与静电卡盘的电介质层的场和一个或多个区域中的每一个相关联的静电吸引力，其中静电吸引力基于场和一个或多个区域中的每一个的介电材料而变化。在一个或多个区域中的静电吸引力比现场更大，其中将工件的翘曲区域吸引到夹紧表面，并将经弯曲的工件夹紧到穿过弯曲的工件的表面的夹紧表面。

2. 发明授权

US08796105B2 Method and apparatus for preparing polysilazane on a semiconductor wafer 有权
标题翻译：在半导体晶片上制备聚硅氮烷的方法和装置
公开(公告)号：US08796105B2
公开(公告)日：2014-08-05
申请号：US13558284
申请日：2012-07-25
申请人： You-Hua Chou , Chih-Tsung Lee , Min-Hao Hong , Ming-Huei Lien , Chih-Jen Wu , Chen-Ming Huang
发明人： You-Hua Chou , Chih-Tsung Lee , Min-Hao Hong , Ming-Huei Lien , Chih-Jen Wu , Chen-Ming Huang
IPC分类号： H01L21/76
CPC分类号： H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02323 , H01L21/02337 , H01L21/76227
摘要： A method for depositing a polysilazane on a semiconductor wafer is provided. The method includes steps of disposing a silazane onto the semiconductor wafer, and heating the silazane to form the polysilazane on the semiconductor wafer. An apparatus for preparing a polysilazane on a semiconductor wafer is also provided.
摘要翻译：提供了一种在半导体晶片上沉积聚硅氮烷的方法。该方法包括将硅氮烷置于半导体晶片上，并加热硅氮烷以在半导体晶片上形成聚硅氮烷的步骤。还提供了一种在半导体晶片上制备聚硅氮烷的设备。

3. 发明申请

US20140030866A1 METHOD AND APPARATUS FOR PREPARING POLYSILAZANE ON A SEMICONDUCTOR WAFER 有权
标题翻译：在半导体波长处制备聚硅氧烷的方法和装置
公开(公告)号：US20140030866A1
公开(公告)日：2014-01-30
申请号：US13558284
申请日：2012-07-25
申请人： You-Hua Chou , Chih-Tsung Lee , Min-Hao Hong , Ming-Huei Lien , Chih-Jen Wu , Chen-Ming Huang
发明人： You-Hua Chou , Chih-Tsung Lee , Min-Hao Hong , Ming-Huei Lien , Chih-Jen Wu , Chen-Ming Huang
IPC分类号： H01L21/762 , H01L21/314
CPC分类号： H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02323 , H01L21/02337 , H01L21/76227
摘要： A method for depositing a polysilazane on a semiconductor wafer is provided. The method includes steps of disposing a silazane onto the semiconductor wafer, and heating the silazane to form the polysilazane on the semiconductor wafer. An apparatus for preparing a polysilazane on a semiconductor wafer is also provided.
摘要翻译：提供了一种在半导体晶片上沉积聚硅氮烷的方法。该方法包括将硅氮烷置于半导体晶片上，并加热硅氮烷以在半导体晶片上形成聚硅氮烷的步骤。还提供了一种在半导体晶片上制备聚硅氮烷的设备。

4. 发明申请

US20130320235A1 UV CURING SYSTEM FOR SEMICONDUCTORS 有权
标题翻译：用于半导体的UV固化系统
公开(公告)号：US20130320235A1
公开(公告)日：2013-12-05
申请号：US13486025
申请日：2012-06-01
申请人： Ming Huei LIEN , Chia-Ho CHEN , Shu-Fen WU , Chih-Tsung LEE , You-Hua CHOU
发明人： Ming Huei LIEN , Chia-Ho CHEN , Shu-Fen WU , Chih-Tsung LEE , You-Hua CHOU
IPC分类号： G21K5/08
CPC分类号： H01L21/6776 , H01L21/3105 , H01L21/67115
摘要： Embodiments of an ultraviolet (UV) curing system for treating a semiconductor substrate such as a wafer are disclosed. The curing system generally includes a processing chamber, a wafer support for holding a wafer in the chamber, a UV radiation source disposed above the chamber, and a UV transparent window interspersed between the radiation source and wafer support. In one embodiment, the wafer support is provided by a belt conveyor operable to transport wafers through the chamber during UV curing. In another embodiment, the UV radiation source is a movable lamp unit that travels across the top of the chamber for irradiating the wafer. In another embodiment, the UV transparent window includes a UV radiation modifier that reduces the intensity of UV radiation on portions of the wafer positioned below the modifier. Various embodiments enhance wafer curing uniformity by normalizing UV intensity levels on the wafer.
摘要翻译：公开了用于处理诸如晶片的半导体衬底的紫外（UV）固化系统的实施例。固化系统通常包括处理室，用于在室中保持晶片的晶片支撑件，设置在室上方的UV辐射源，以及散布在辐射源和晶片支撑件之间的UV透明窗口。在一个实施例中，晶片支撑件由带式输送机提供，其可操作以在UV固化期间将晶片传送通过室。在另一个实施例中，UV辐射源是可移动的灯单元，其移动穿过室的顶部以照射晶片。在另一个实施方案中，UV透明窗口包括UV辐射调节剂，其降低位于调节剂下方的晶片部分上的UV辐射强度。各种实施例通过使晶片上的UV强度水平归一化来增强晶片固化均匀性。

5. 发明申请

US20130239889A1 VALVE PURGE ASSEMBLY FOR SEMICONDUCTOR MANUFACTURING TOOLS 审中-公开
标题翻译：用于半导体制造工具的阀门组件
公开(公告)号：US20130239889A1
公开(公告)日：2013-09-19
申请号：US13419835
申请日：2012-03-14
申请人： Ming Huei LIEN , Chia-Ho CHEN , Shu-Fen WU , Chih-Tsung LEE , You-Hua CHOU
发明人： Ming Huei LIEN , Chia-Ho CHEN , Shu-Fen WU , Chih-Tsung LEE , You-Hua CHOU
IPC分类号： C23C16/00 , F24F7/00
CPC分类号： C23C16/54 , C23C16/4405 , C23C16/4408 , H01L21/67126
摘要： A semiconductor manufacturing tool and method for operating the tool are provided. The semiconductor manufacturing tool includes a process chamber in which plasma operations or ion etching operations are carried out and a valve assembly for opening and closing a valve that provides for loading and unloading substrates into and out of, the semiconductor manufacturing tool. While a processing operation is being carried out in the chamber, a valve assembly purge operation also takes place. The valve assembly purge operation involves inert gases being directed to the valve assembly area to prevent the buildup of particles and contaminating films in the valve assembly. Because the valve assembly is maintained in a clean condition, particle contamination is reduced or eliminated.
摘要翻译：提供了一种用于操作该工具的半导体制造工具和方法。半导体制造工具包括其中执行等离子体操作或离子蚀刻操作的处理室和用于打开和关闭提供用于将衬底加载和卸载到半导体制造工具中的阀的阀组件。当在腔室中进行处理操作时，也发生阀组件清洗操作。阀组件清洗操作涉及惰性气体被引导到阀组件区域，以防止阀组件中的颗粒和污染膜的积聚。因为阀组件保持在清洁状态，颗粒污染被减少或消除。

6. 发明申请

US20130201596A1 Electrostatic Chuck with Multi-Zone Control 有权
标题翻译：带多区域控制的静电卡盘
公开(公告)号：US20130201596A1
公开(公告)日：2013-08-08
申请号：US13364463
申请日：2012-02-02
申请人： Chia-Ho Chen , Ming Huei Lien , Shu-Fen Wu , Chih-Tsung Lee , You-Hua Chou
发明人： Chia-Ho Chen , Ming Huei Lien , Shu-Fen Wu , Chih-Tsung Lee , You-Hua Chou
IPC分类号： H01L21/683
CPC分类号： H01L21/6833 , H01L21/6831 , H02N13/00
摘要： An electrostatic chuck for clamping a warped workpiece has a clamping surface comprising a dielectric layer. The dielectric layer has a field and one or more zones formed of differing dielectric materials. One or more electrodes are coupled to a power supply, and a controller controls a clamping voltage supplied to the one or more electrodes via the power supply. An electrostatic attraction force associated with each of the field and one or more zones of the dielectric layer of the electrostatic chuck is induced, wherein the electrostatic attraction force varies based on the dielectric material of each of the field and one or more zones. The electrostatic attraction force is greater in the one or more zones than in the field, therein attracting warped regions of the workpiece to the clamping surface and clamping the warped workpiece to the clamping surface across a surface of the warped workpiece.
摘要翻译：用于夹紧翘曲工件的静电卡盘具有包括电介质层的夹紧表面。电介质层具有由不同介电材料形成的场和一个或多个区域。一个或多个电极耦合到电源，并且控制器经由电源控制提供给一个或多个电极的钳位电压。诱发与静电卡盘的电介质层的场和一个或多个区域中的每一个相关联的静电吸引力，其中静电吸引力基于场和一个或多个区域中的每一个的介电材料而变化。在一个或多个区域中的静电吸引力比现场更大，其中将工件的翘曲区域吸引到夹紧表面，并将经弯曲的工件夹紧到穿过弯曲的工件的表面的夹紧表面。

7. 发明授权

US09287154B2 UV curing system for semiconductors 有权
标题翻译：半导体UV固化系统
公开(公告)号：US09287154B2
公开(公告)日：2016-03-15
申请号：US13486025
申请日：2012-06-01
申请人： Ming Huei Lien , Chia-Ho Chen , Shu-Fen Wu , Chih-Tsung Lee , You-Hua Chou
发明人： Ming Huei Lien , Chia-Ho Chen , Shu-Fen Wu , Chih-Tsung Lee , You-Hua Chou
IPC分类号： H01L21/677 , H01L21/68 , H01L21/67 , H01L21/3105
CPC分类号： H01L21/6776 , H01L21/3105 , H01L21/67115
摘要： Embodiments of an ultraviolet (UV) curing system for treating a semiconductor substrate such as a wafer are disclosed. The curing system generally includes a processing chamber, a wafer support for holding a wafer in the chamber, a UV radiation source disposed above the chamber, and a UV transparent window interspersed between the radiation source and wafer support. In one embodiment, the wafer support is provided by a belt conveyor operable to transport wafers through the chamber during UV curing. In another embodiment, the UV radiation source is a movable lamp unit that travels across the top of the chamber for irradiating the wafer. In another embodiment, the UV transparent window includes a UV radiation modifier that reduces the intensity of UV radiation on portions of the wafer positioned below the modifier. Various embodiments enhance wafer curing uniformity by normalizing UV intensity levels on the wafer.
摘要翻译：公开了用于处理诸如晶片的半导体衬底的紫外（UV）固化系统的实施例。固化系统通常包括处理室，用于在室中保持晶片的晶片支撑件，设置在室上方的UV辐射源，以及散布在辐射源和晶片支撑件之间的UV透明窗口。在一个实施例中，晶片支撑件由带式输送机提供，其可操作以在UV固化期间将晶片传送通过室。在另一个实施例中，UV辐射源是可移动的灯单元，其移动穿过室的顶部以照射晶片。在另一个实施方案中，UV透明窗口包括UV辐射调节剂，其降低位于调节剂下方的晶片部分上的UV辐射强度。各种实施例通过使晶片上的UV强度水平归一化来增强晶片固化均匀性。

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