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    • 2. 发明授权
    • Cleaving process to fabricate multilayered substrates using low implantation doses
    • 使用低植入剂量制造多层底物的切割过程
    • US07378330B2
    • 2008-05-27
    • US11392452
    • 2006-03-28
    • Francois J. HenleyMichael A. BryanWilliam G. En
    • Francois J. HenleyMichael A. BryanWilliam G. En
    • H01L21/76H01L21/4763H01L29/00H01L23/44
    • H01L21/76251H01L21/26506H01L21/76254
    • A method of forming substrates, e.g., silicon on insulator, silicon on silicon. The method includes providing a donor substrate, e.g., silicon wafer. The method also includes forming a cleave layer on the donor substrate that contains the cleave plane, the plane of eventual separation. In a specific embodiment, the cleave layer comprising silicon germanium. The method also includes forming a device layer (e.g., epitaxial silicon) on the cleave layer. The method also includes introducing particles into the cleave layer to add stress in the cleave layer. The particles within the cleave layer are then redistributed to form a high concentration region of the particles in the vicinity of the cleave plane, where the redistribution of the particles is carried out in a manner substantially free from microbubble or microcavity formation of the particles in the cleave plane. That is, the particles are generally at a low dose, which is defined herein as a lack of microbubble or microcavity formation in the cleave plane. The method also includes providing selected energy to the donor substrate to cleave the device layer from the cleave layer at the cleave plane, whereupon the selected energy is applied to create a controlled cleaving action to remove the device layer from a portion of the cleave layer in a controlled manner.
    • 一种形成衬底的方法,例如绝缘体上的硅,硅上的硅。 该方法包括提供施主衬底,例如硅晶片。 该方法还包括在供体基底上形成含有切割平面的切割层,最终分离的平面。 在具体实施方案中,包含硅锗的切割层。 该方法还包括在切割层上形成器件层(例如外延硅)。 该方法还包括将颗粒引入裂解层以在切割层中增加应力。 然后将切割层内的颗粒重新分布以形成在解理面附近的颗粒的高浓度区域,其中颗粒的再分布以基本上不含微孔中的微泡或微腔形成的方式进行 劈平面 也就是说,颗粒通常为低剂量,其在本文中定义为在解理面中缺乏微泡或微腔形成。 该方法还包括向施主衬底提供所选择的能量以在解理面从裂解层切割器件层,由此施加所选择的能量以产生受控的切割作用,以将器件层从切割层的一部分去除 受控的方式。
    • 3. 发明授权
    • Layer materials and planar optical devices
    • 层材料和平面光学器件
    • US06788866B2
    • 2004-09-07
    • US09931977
    • 2001-08-17
    • Michael A. Bryan
    • Michael A. Bryan
    • G02B610
    • G02B6/132G02B6/105G02B6/12004G02B6/122G02B6/134
    • Structures include a substrate with a release layer on the surface of the substrate and a uniform material over the release layer. The release layer generally includes powders or partly sintered powders. In some embodiments the uniform material is an optical material, which can be a glass. The optical material can be mechanically decoupled fro the substrate such that the optical material is stress free. The release layer can function as a transfer layer for transferring the uniform material to another substrate of separating the uniform material to create a freestanding structure. The release layer can be formed by the deposition of a material with a higher sintering temperature than powders used to form the uniform material. In other embodiments, a heating step is performed to preserve the release layer while consolidating powders on top into the uniform material.
    • 结构包括在基材表面上具有剥离层的基材和在脱模层上的均匀材料。 释放层通常包括粉末或部分烧结的粉末。 在一些实施例中,均匀的材料是可以是玻璃的光学材料。 光学材料可以被机械地从衬底分离,使得光学材料是无应力的。 释放层可以用作转移层,用于将均匀的材料转移到分离均匀材料的另一个基底以产生独立结构。 释放层可以通过沉积具有比用于形成均匀材料的粉末更高的烧结温度的材料形成。 在其他实施方案中,进行加热步骤以保持释放层,同时将粉末顶部固定在均匀材料中。