专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080206963A1 Cleaving process to fabricate multilayered substrates using low implantation doses 审中-公开
公开(公告)号：US20080206963A1
公开(公告)日：2008-08-28
申请号：US12148318
申请日：2008-04-18
申请人： Francois J. Henley , Michael A. Bryan , William G. En
发明人： Francois J. Henley , Michael A. Bryan , William G. En
IPC分类号： H01L21/304
CPC分类号： H01L21/26506 , H01L21/2658 , H01L21/76251 , H01L21/76254
摘要： A method of forming substrates, e.g., silicon on insulator, silicon on silicon. The method includes providing a donor substrate, e.g., silicon wafer. The method also includes forming a cleave layer on the donor substrate that contains the cleave plane, the plane of eventual separation. In a specific embodiment, the cleave layer comprising silicon germanium. The method also includes forming a device layer (e.g., epitaxial silicon) on the cleave layer. The method also includes introducing particles into the cleave layer to add stress in the cleave layer. The particles within the cleave layer are then redistributed to form a high concentration region of the particles in the vicinity of the cleave plane, where the redistribution of the particles is carried out in a manner substantially free from microbubble or microcavity formation of the particles in the cleave plane. That is, the particles are generally at a low dose, which is defined herein as a lack of microbubble or microcavity formation in the cleave plane. The method also includes providing selected energy to the donor substrate to cleave the device layer from the cleave layer at the cleave plane, whereupon the selected energy is applied to create a controlled cleaving action to remove the device layer from a portion of the cleave layer in a controlled manner.

2. 发明授权

US06458723B1 High temperature implant apparatus 有权
标题翻译：高温植入装置
公开(公告)号：US06458723B1
公开(公告)日：2002-10-01
申请号：US09594464
申请日：2000-06-14
申请人： Francois J. Henley , Michael A. Bryan , William G. En
发明人： Francois J. Henley , Michael A. Bryan , William G. En
IPC分类号： H01L2126
CPC分类号： H01L21/67103 , H01J2237/2001 , H01J2237/31701
摘要： An ion implantation apparatus and method. The apparatus has a vacuum chamber and an ion beam generator to generate an ion beam in the vacuum chamber. The apparatus also has an implant wheel (10), in the vacuum chamber, having a plurality of circumferentially distributed substrate holding positions. Each of the substrate holding positions comprises a substrate holder (17), which includes an elastomer overlying the substrate holder (17) and a thermal insulating material (71) (e.g., quartz, silicon, ceramics, and other substantially non-compliant materials) overlying the elastomer (72). The present thermal insulating material increases a temperature of a substrate as it is implanted.
摘要翻译：一种离子注入装置及方法。该装置具有真空室和离子束发生器，以在真空室中产生离子束。该设备还具有植入轮（10），其在真空室中具有多个周向分布的衬底保持位置。每个基板保持位置包括基板保持器（17），其包括覆盖基板保持器（17）的弹性体和绝热材料（例如石英，硅，陶瓷和其他基本上不顺从的材料）覆盖弹性体（72）。本发明的绝热材料在植入时增加了基板的温度。

3. 发明授权

US07378330B2 Cleaving process to fabricate multilayered substrates using low implantation doses 有权
标题翻译：使用低植入剂量制造多层底物的切割过程
公开(公告)号：US07378330B2
公开(公告)日：2008-05-27
申请号：US11392452
申请日：2006-03-28
申请人： Francois J. Henley , Michael A. Bryan , William G. En
发明人： Francois J. Henley , Michael A. Bryan , William G. En
IPC分类号： H01L21/76 , H01L21/4763 , H01L29/00 , H01L23/44
CPC分类号： H01L21/76251 , H01L21/26506 , H01L21/76254
摘要： A method of forming substrates, e.g., silicon on insulator, silicon on silicon. The method includes providing a donor substrate, e.g., silicon wafer. The method also includes forming a cleave layer on the donor substrate that contains the cleave plane, the plane of eventual separation. In a specific embodiment, the cleave layer comprising silicon germanium. The method also includes forming a device layer (e.g., epitaxial silicon) on the cleave layer. The method also includes introducing particles into the cleave layer to add stress in the cleave layer. The particles within the cleave layer are then redistributed to form a high concentration region of the particles in the vicinity of the cleave plane, where the redistribution of the particles is carried out in a manner substantially free from microbubble or microcavity formation of the particles in the cleave plane. That is, the particles are generally at a low dose, which is defined herein as a lack of microbubble or microcavity formation in the cleave plane. The method also includes providing selected energy to the donor substrate to cleave the device layer from the cleave layer at the cleave plane, whereupon the selected energy is applied to create a controlled cleaving action to remove the device layer from a portion of the cleave layer in a controlled manner.
摘要翻译：一种形成衬底的方法，例如绝缘体上的硅，硅上的硅。该方法包括提供施主衬底，例如硅晶片。该方法还包括在供体基底上形成含有切割平面的切割层，最终分离的平面。在具体实施方案中，包含硅锗的切割层。该方法还包括在切割层上形成器件层（例如外延硅）。该方法还包括将颗粒引入裂解层以在切割层中增加应力。然后将切割层内的颗粒重新分布以形成在解理面附近的颗粒的高浓度区域，其中颗粒的再分布以基本上不含微孔中的微泡或微腔形成的方式进行劈平面也就是说，颗粒通常为低剂量，其在本文中定义为在解理面中缺乏微泡或微腔形成。该方法还包括向施主衬底提供所选择的能量以在解理面从裂解层切割器件层，由此施加所选择的能量以产生受控的切割作用，以将器件层从切割层的一部分去除受控的方式。

4. 发明授权

US07056808B2 Cleaving process to fabricate multilayered substrates using low implantation doses 失效
公开(公告)号：US07056808B2
公开(公告)日：2006-06-06
申请号：US10301234
申请日：2002-11-20
申请人： Francois J. Henley , Michael A. Bryan , William G. En
发明人： Francois J. Henley , Michael A. Bryan , William G. En
IPC分类号： H01L21/8238 , H01L21/76 , H01L21/46
CPC分类号： H01L21/76251 , H01L21/26506 , H01L21/76254
摘要： A method of forming substrates, e.g., silicon on insulator, silicon on silicon. The method includes providing a donor substrate, e.g., silicon wafer. The method also includes forming a cleave layer on the donor substrate that contains the cleave plane, the plane of eventual separation. In a specific embodiment, the cleave layer comprising silicon germanium. The method also includes forming a device layer (e.g., epitaxial silicon) on the cleave layer. The method also includes introducing particles into the cleave layer to add stress in the cleave layer. The particles within the cleave layer are then redistributed to form a high concentration region of the particles in the vicinity of the cleave plane, where the redistribution of the particles is carried out in a manner substantially free from microbubble or microcavity formation of the particles in the cleave plane. That is, the particles are generally at a low dose, which is defined herein as a lack of microbubble or microcavity formation in the cleave plane. The method also includes providing selected energy to the donor substrate to cleave the device layer from the cleave layer at the cleave plane, whereupon the selected energy is applied to create a controlled cleaving action to remove the device layer from a portion of the cleave layer in a controlled manner.

5. 发明授权

US5790247A Technique for determining defect positions in three dimensions in a transparent structure 失效
标题翻译：用于在透明结构中确定三维缺陷位置的技术
公开(公告)号：US5790247A
公开(公告)日：1998-08-04
申请号：US721332
申请日：1996-09-26
申请人： Francois J. Henley , Michael A. Bryan
发明人： Francois J. Henley , Michael A. Bryan
IPC分类号： G01N21/958 , G01M11/00 , G01N21/88 , G01N21/17
CPC分类号： G01N21/8806 , G01N21/958
摘要： A method (500) for inspecting anomalies, which are likely defects of several types, namely, particles on the surface, scratches into surface, and defects in bulk material, is provided. This inspection method involves two types of illumination, which can be used separately or together. These two types highlight anomalies sufficiently differently to enable the defect monitoring tool to distinguish between defect type and defect location along an inspection axis. The illumination methods are direct internal side illumination (114) where the plate is used as light pipe, and external front-side illumination (117). In direct internal side illumination, a fiber optic feed (115) with flared end arranged as a line source is abutted to an edge (123) of the plate (102). In external side illumination, the source is light directed at an acute angle, preferably a grazing angle, to one of the surfaces (121). Anomalies such as dust particles on the illuminated surface will scatter light much more efficiently with external front-side illumination, than direct internal side lighting, since particles on the surface would otherwise scatter light only through weak evanescent coupling via the internal side lighting.
摘要翻译：提供了用于检查异常的方法（500），其可能是几种类型的缺陷，即表面上的颗粒，划痕到表面和散装材料中的缺陷。这种检查方法涉及两种类型的照明，可单独使用或一起使用。这两种类型强调异常，使缺陷监测工具能够区分沿着检查轴的缺陷类型和缺陷位置。照明方法是直接内侧照明（114），其中板用作光管和外部前侧照明（117）。在直接内侧照明中，具有布置成线源的喇叭口端的光纤馈电（115）与板（102）的边缘（123）邻接。在外侧照明中，光源以锐角（优选为掠角）指向一个表面（121）。由于表面上的颗粒会通过内侧照明通过弱的渐逝耦合使表面上的颗粒散射光，所以像照明表面上的灰尘颗粒那样的异常将会比外部前侧照明更有效地散射光。

6. 发明授权

US07437047B2 Optical materials with selected index-of-refraction 有权
$Optical materials with selected index-of-refraction$
标题翻译：具有折射率折射率的光学材料
公开(公告)号：US07437047B2
公开(公告)日：2008-10-14
申请号：US11796798
申请日：2007-04-30
申请人： Michael A. Bryan , Nobuyuki Kambe
发明人： Michael A. Bryan , Nobuyuki Kambe
IPC分类号： G02B6/10 , H01L21/00
CPC分类号： G02B6/13 , G02B6/124 , G02B6/125 , Y10T428/25
摘要： Photosensitive optical materials are used for establishing more versatile approaches for optical device formation. In some embodiments, unpatterned light is used to shift the index-of-refraction of planar optical structures to shift the index-of-refraction of the photosensitive material to a desired value. This approach can be effective to produce cladding material with a selected index-of-refraction. In additional embodiments gradients in index-of-refraction are formed using photosensitive materials. In further embodiments, the photosensitive materials are patterned within the planar optical structure. Irradiation of the photosensitive material can selectively shift the index-of-refraction of the patterned photosensitive material. By patterning the light used to irradiate the patterned photosensitive material, different optical devices can be selectively activated within the optical structure.
摘要翻译：光敏光学材料用于建立用于光学器件形成的更通用的方法。在一些实施例中，使用未图案的光来移动平面光学结构的折射率以将感光材料的折射率移动到期望值。这种方法可以有效地生产具有选定的折射率的包层材料。在另外的实施例中，使用光敏材料形成折射率折射率。在另外的实施例中，感光材料在平面光学结构内图案化。感光材料的照射可以选择性地移动图案化感光材料的折射率。通过图案化用于照射图案化感光材料的光，可以在光学结构内选择性地激活不同的光学器件。

7. 发明授权

US07224882B2 Optical materials with selected index-of-refraction 有权
$Optical materials with selected index-of-refraction$
标题翻译：具有折射率折射率的光学材料
公开(公告)号：US07224882B2
公开(公告)日：2007-05-29
申请号：US10620176
申请日：2003-07-15
申请人： Michael A. Bryan , Nobuyuki Kambe
发明人： Michael A. Bryan , Nobuyuki Kambe
IPC分类号： G02B6/00 , H01L21/00
CPC分类号： G02B6/13 , G02B6/124 , G02B6/125 , Y10T428/25
摘要： Photosensitive optical materials are used for establishing more versatile approaches for optical device formation. In some embodiments, unpatterned light is used to shift the index-of-refraction of planar optical structures to shift the index-of-refraction of the photosensitive material to a desired value. This approach can be effective to produce cladding material with a selected index-of-refraction. In additional embodiments gradients in index-of-refraction are formed using, photosensitive materials. In further embodiments, the photosensitive materials are patterned within the planar optical structure. Irradiation of the photosensitive material can selectively shift the index-of-refraction of the patterned photosensitive material. By patterning the light used to irradiate the patterned photosensitive material, different optical devices can be selectively activated within the optical structure.
摘要翻译：光敏光学材料用于建立用于光学器件形成的更通用的方法。在一些实施例中，使用未图案的光来移动平面光学结构的折射率以将感光材料的折射率移动到期望值。这种方法可以有效地生产具有选定的折射率的包层材料。在另外的实施例中，使用感光材料形成折射率折射率。在另外的实施例中，感光材料在平面光学结构内图案化。感光材料的照射可以选择性地移动图案化感光材料的折射率。通过图案化用于照射图案化感光材料的光，可以在光学结构内选择性地激活不同的光学器件。

8. 发明授权

US06211991B1 Modulator manufacturing process and device 失效
标题翻译：调制器制造工艺及装置
公开(公告)号：US06211991B1
公开(公告)日：2001-04-03
申请号：US09098192
申请日：1998-06-16
申请人： Michael A. Bryan
发明人： Michael A. Bryan
IPC分类号： G02F103
CPC分类号： G02F1/1341 , G02F1/0305 , G02F1/061 , G02F1/133365 , G02F1/1334
摘要： An improved method and resulting device 10 for fabricating an electro-optical modulator material. The technique includes providing a substrate 509, which has a top surface. A first layer of electrode material 501 is defined overlying the top surface. The method also includes applying a transfer sheet 400, having an electro-optical material 405, to the first layer of electrode material 501, where the electro-optical material is affixed to the first layer of electrode material. A step of removing (e.g., peeling) 801 the transfer sheet from the electro-optical material is included. The removing step leaves a substantial portion of the electro-optical modulator material intact and affixed to the first layer of electrode material. This method generally uses less steps and provides a higher quality element than pre-existing techniques.
摘要翻译：一种用于制造电光调制器材料的改进方法和所得装置10。该技术包括提供具有顶表面的基底509。电极材料501的第一层被限定在顶表面上。该方法还包括将具有电光材料405的转印片400施加到电极材料501的第一层上，其中电光材料固定在第一层电极材料上。包括从电光材料去除（例如剥离）801转印片的步骤。去除步骤使电光调制器材料的大部分完好无损地固定在第一层电极材料上。该方法通常使用较少的步骤，并提供比先前存在的技术更高质量的元素。

9. 发明授权

US5867404A Method and apparatus for monitoring railway defects 失效
标题翻译：监测铁路缺陷的方法和装置
公开(公告)号：US5867404A
公开(公告)日：1999-02-02
申请号：US828469
申请日：1997-03-31
申请人： Michael A. Bryan
发明人： Michael A. Bryan
IPC分类号： B61K9/08 , B61L23/04 , E01B35/00 , G01S5/02 , G01S5/14 , G01S19/14 , G01S19/51 , H04B7/185
CPC分类号： B61L23/044 , B61K9/08 , B61L23/048 , E01B35/00 , G01S5/0252 , B61L2205/04 , G01S19/14
摘要： A method for monitoring defects in a railway with a computer system, the computer system includes the steps of determining positional data and status data for a railway, comparing historical status data to the status data to determine a defect for the railway, the defect having a defect type, displaying an image of a particular geographic area on a display that includes a location corresponding to the positional data, determining an icon associated with the defect type, and displaying the icon associated with the defect type on the display.
摘要翻译：一种用于利用计算机系统监测铁路缺陷的方法，所述计算机系统包括确定铁路的位置数据和状态数据的步骤，将历史状态数据与状态数据进行比较，以确定铁路的缺陷，所述缺陷具有缺陷类型，在包括与位置数据相对应的位置的显示器上显示特定地理区域的图像，确定与缺陷类型相关联的图标，以及在显示器上显示与缺陷类型相关联的图标。

10. 发明授权

US07164818B2 Integrated gradient index lenses 有权
标题翻译：积分渐变指数镜头
公开(公告)号：US07164818B2
公开(公告)日：2007-01-16
申请号：US10138754
申请日：2002-05-03
申请人： Michael A. Bryan , Elizabeth Anne Nevis
发明人： Michael A. Bryan , Elizabeth Anne Nevis
IPC分类号： G02B6/32
CPC分类号： G02B6/12004 , G02B6/12002 , G02B6/1245 , G02B6/132 , G02B6/32 , G02B2006/12102
摘要： Gradient index lenses are described that are integrated within a planar optical structure. The gradient index lens is optically coupled to a planar optical waveguide. In some embodiments, the gradient index lens with variation in index-of-refraction in one dimension is within an optical fiber. The optical fiber includes cladding at least along the edges of the central plane of the gradient index lens. Methods for forming the integrated structures are described. Further optical structures involving the gradient index lenses are also described.
摘要翻译：描述了集成在平面光学结构内的渐变折射率透镜。梯度折射率透镜光学耦合到平面光波导。在一些实施例中，在一个维度上具有变化的折射率的渐变折射率透镜在光纤内。光纤包括至少沿着渐变折射率透镜的中心平面的边缘的包层。描述形成集成结构的方法。还描述了涉及梯度折射率透镜的其它光学结构。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式