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1. 发明申请

US20100062149A1 METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS 审中-公开
标题翻译：在原子层沉积过程中调节沉积速率的方法
公开(公告)号：US20100062149A1
公开(公告)日：2010-03-11
申请号：US12465471
申请日：2009-05-13
申请人： Paul Ma , Joseph F. Aubuchon , Jiang Lu , Mei Chang
发明人： Paul Ma , Joseph F. Aubuchon , Jiang Lu , Mei Chang
IPC分类号： B05D5/12
CPC分类号： H01L21/76841 , C23C16/45534 , C23C16/52
摘要： Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA).
摘要翻译：本发明的实施例提供了在诸如原子层沉积（ALD）工艺的气相沉积工艺期间将材料沉积在处理室内的衬底上的方法。在一个实施例中，提供了一种方法，其包括在ALD工艺期间将衬底沉积到衬底上的同时将衬底依次暴露于第一前体气体和至少第二前体气体，并且连续地或周期地将衬底暴露于处理气体之前到和/或在ALD过程期间。可以通过改变暴露于衬底的处理气体的量来控制被沉积的材料的沉积速率。在一个实例中，氮化钽沉积在衬底上，并且烷基氨基金属前体气体包含钽前体，例如五（二甲基氨基）钽（PDMAT）），第二前体气体含有氮前体如氨，并且处理气体含有二甲胺（DMA）。

2. 发明授权

US09418890B2 Method for tuning a deposition rate during an atomic layer deposition process 有权
标题翻译：在原子层沉积过程中调整沉积速率的方法
公开(公告)号：US09418890B2
公开(公告)日：2016-08-16
申请号：US14279260
申请日：2014-05-15
申请人： Paul Ma , Joseph F. Aubuchon , Jiang Lu , Mei Chang
发明人： Paul Ma , Joseph F. Aubuchon , Jiang Lu , Mei Chang
IPC分类号： H01L21/768 , C23C16/455 , C23C16/52
CPC分类号： H01L21/76841 , C23C16/45534 , C23C16/52
摘要： Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA).
摘要翻译：本发明的实施例提供了在诸如原子层沉积（ALD）工艺的气相沉积工艺期间将材料沉积在处理室内的衬底上的方法。在一个实施例中，提供了一种方法，其包括在ALD工艺期间将衬底沉积到衬底上的同时将衬底依次暴露于第一前体气体和至少第二前体气体，并且连续地或周期地将衬底暴露于处理气体之前到和/或在ALD过程期间。可以通过改变暴露于衬底的处理气体的量来控制被沉积的材料的沉积速率。在一个实例中，氮化钽沉积在衬底上，并且烷基氨基金属前体气体包含钽前体，例如五（二甲基氨基）钽（PDMAT）），第二前体气体含有氮前体如氨，并且处理气体含有二甲胺（DMA）。

3. 发明申请

US20090053426A1 COBALT DEPOSITION ON BARRIER SURFACES 有权
标题翻译：铜棒沉积在阻挡层表面上
公开(公告)号：US20090053426A1
公开(公告)日：2009-02-26
申请号：US12201976
申请日：2008-08-29
申请人： JIANG LU , Hyoung-Chan Ha , Paul Ma , Seshadri Ganguli , Joseph F. Aubuchon , Sang Ho Yu , Murali K. Narasimhan
发明人： JIANG LU , Hyoung-Chan Ha , Paul Ma , Seshadri Ganguli , Joseph F. Aubuchon , Sang Ho Yu , Murali K. Narasimhan
IPC分类号： B05D5/12 , B05D3/06
CPC分类号： H01L21/76871 , C23C16/16 , C23C16/18 , C23C16/42 , C23C16/56 , H01L21/28556 , H01L21/28562 , H01L21/28568 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L21/76873
摘要： Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.
摘要翻译：本发明的实施方案提供了在阻挡层上沉积钴层并随后在其上沉积诸如铜或铜合金的导电材料的方法。在一个实施例中，提供了一种在衬底表面上沉积材料的方法，其包括在衬底上形成阻挡层，将衬底暴露于六羰基丁基乙炔二钴（CCTBA）和氢，以在气相沉积期间在阻挡层上形成钴层工艺（例如，CVD或ALD），以及在钴层上沉积导电材料。在一些实例中，阻挡层和/或钴层可以在诸如热处理，原位等离子体处理或远程等离子体处理的处理过程中暴露于气体或试剂。

4. 发明授权

US09051641B2 Cobalt deposition on barrier surfaces 有权
标题翻译：阻挡表面上的钴沉积
公开(公告)号：US09051641B2
公开(公告)日：2015-06-09
申请号：US12201976
申请日：2008-08-29
申请人： Jiang Lu , Hyoung-Chan Ha , Paul Ma , Seshadri Ganguli , Joseph F. Aubuchon , Sang Ho Yu , Murali K. Narasimhan
发明人： Jiang Lu , Hyoung-Chan Ha , Paul Ma , Seshadri Ganguli , Joseph F. Aubuchon , Sang Ho Yu , Murali K. Narasimhan
IPC分类号： B05D5/12 , C23C16/16 , C23C16/18 , C23C16/42 , C23C16/56 , H01L21/285 , H01L21/768
CPC分类号： H01L21/76871 , C23C16/16 , C23C16/18 , C23C16/42 , C23C16/56 , H01L21/28556 , H01L21/28562 , H01L21/28568 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L21/76873
摘要： Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.
摘要翻译：本发明的实施方案提供了在阻挡层上沉积钴层并随后在其上沉积诸如铜或铜合金的导电材料的方法。在一个实施例中，提供了一种在衬底表面上沉积材料的方法，其包括在衬底上形成阻挡层，将衬底暴露于六羰基丁基乙炔二钴（CCTBA）和氢，以在气相沉积期间在阻挡层上形成钴层工艺（例如，CVD或ALD），以及在钴层上沉积导电材料。在一些实例中，阻挡层和/或钴层可以在诸如热处理，原位等离子体处理或远程等离子体处理的处理过程中暴露于气体或试剂。

5. 发明授权

US08491967B2 In-situ chamber treatment and deposition process 有权
标题翻译：原位室处理和沉积过程
公开(公告)号：US08491967B2
公开(公告)日：2013-07-23
申请号：US12206705
申请日：2008-09-08
申请人： Paul F. Ma , Joseph F. Aubuchon , Mei Chang , Steven H. Kim , Dien-Yeh Wu , Norman M. Nakashima , Mark Johnson , Roja Palakodeti
发明人： Paul F. Ma , Joseph F. Aubuchon , Mei Chang , Steven H. Kim , Dien-Yeh Wu , Norman M. Nakashima , Mark Johnson , Roja Palakodeti
IPC分类号： B05D5/12
CPC分类号： C23C16/34 , C23C16/4411 , C23C16/45508 , C23C16/45531 , C23C16/45582 , H01L21/28562 , H01L21/76843
摘要： Embodiments of the invention provide a method for treating the inner surfaces of a processing chamber and depositing a material on a during a vapor deposition process, such as atomic layer deposition (ALD) or by chemical vapor deposition (CVD). In one embodiment, the inner surfaces of the processing chamber and the substrate may be exposed to a reagent, such as a hydrogenated ligand compound during a pretreatment process. The hydrogenated ligand compound may be the same ligand as a free ligand formed from the metal-organic precursor used during the subsequent deposition process. The free ligand is usually formed by hydrogenation or thermolysis during the deposition process. In one example, the processing chamber and substrate are exposed to an alkylamine compound (e.g., dimethylamine) during the pretreatment process prior to conducting the vapor deposition process which utilizes a metal-organic chemical precursor having alkylamino ligands, such as pentakis(dimethylamino) tantalum (PDMAT).
摘要翻译：本发明的实施例提供了一种处理室的内表面和在诸如原子层沉积（ALD）或化学气相沉积（CVD））的气相沉积工艺期间沉积材料的方法。在一个实施方案中，处理室和衬底的内表面可以在预处理过程中暴露于试剂，例如氢化配体化合物。氢化配体化合物可以是与在随后的沉积工艺期间使用的金属 - 有机前体形成的游离配体相同的配体。游离配体通常在沉积过程中通过氢化或热解形成。在一个实例中，在进行气相沉积工艺之前，在预处理过程中，处理室和基板暴露于烷基胺化合物（例如二甲胺），其利用具有烷基氨基配体的金属有机化学前体，例如五（二甲基氨基）钽（PDMAT）。

6. 发明申请

US20100062614A1 IN-SITU CHAMBER TREATMENT AND DEPOSITION PROCESS 有权
标题翻译：现场室处理和沉积过程
公开(公告)号：US20100062614A1
公开(公告)日：2010-03-11
申请号：US12206705
申请日：2008-09-08
申请人： Paul F. Ma , Joseph F. Aubuchon , Mei Chang , Steven H. Kim , Dien-Yeh Wu , Norman M. Nakashima , Mark Johnson , Roja Palakodeti
发明人： Paul F. Ma , Joseph F. Aubuchon , Mei Chang , Steven H. Kim , Dien-Yeh Wu , Norman M. Nakashima , Mark Johnson , Roja Palakodeti
IPC分类号： H01L21/314
CPC分类号： C23C16/34 , C23C16/4411 , C23C16/45508 , C23C16/45531 , C23C16/45582 , H01L21/28562 , H01L21/76843
摘要： Embodiments of the invention provide a method for treating the inner surfaces of a processing chamber and depositing a material on a during a vapor deposition process, such as atomic layer deposition (ALD) or by chemical vapor deposition (CVD). In one embodiment, the inner surfaces of the processing chamber and the substrate may be exposed to a reagent, such as a hydrogenated ligand compound during a pretreatment process. The hydrogenated ligand compound may be the same ligand as a free ligand formed from the metal-organic precursor used during the subsequent deposition process. The free ligand is usually formed by hydrogenation or thermolysis during the deposition process. In one example, the processing chamber and substrate are exposed to an alkylamine compound (e.g., dimethylamine) during the pretreatment process prior to conducting the vapor deposition process which utilizes a metal-organic chemical precursor having alkylamino ligands, such as pentakis(dimethylamino) tantalum (PDMAT).
摘要翻译：本发明的实施例提供了一种处理室的内表面和在诸如原子层沉积（ALD）或化学气相沉积（CVD））的气相沉积工艺期间沉积材料的方法。在一个实施方案中，处理室和衬底的内表面可以在预处理过程中暴露于试剂，例如氢化配体化合物。氢化配体化合物可以是与在随后的沉积工艺期间使用的金属 - 有机前体形成的游离配体相同的配体。游离配体通常在沉积过程中通过氢化或热解形成。在一个实例中，在进行气相沉积工艺之前，在预处理过程中，处理室和基板暴露于烷基胺化合物（例如二甲胺），其利用具有烷基氨基配体的金属 - 有机化学前体，例如五（二甲基氨基）钽（PDMAT）。

7. 发明授权

US07780789B2 Vortex chamber lids for atomic layer deposition 有权
标题翻译：涡流室盖用于原子层沉积
公开(公告)号：US07780789B2
公开(公告)日：2010-08-24
申请号：US11923589
申请日：2007-10-24
申请人： Dien-Yeh Wu , Puneet Bajaj , Xiaoxiong Yuan , Steven H. Kim , Schubert S. Chu , Paul F. Ma , Joseph F. Aubuchon
发明人： Dien-Yeh Wu , Puneet Bajaj , Xiaoxiong Yuan , Steven H. Kim , Schubert S. Chu , Paul F. Ma , Joseph F. Aubuchon
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： C23C16/4404 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45502 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber for processing substrates is provided which includes a chamber lid assembly containing an expanding channel extending along a central axis at a central portion of the chamber lid assembly and a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid assembly. The tapered bottom surface may be shaped and sized to substantially cover the substrate receiving surface. The chamber lid assembly further contains a conduit coupled to a gas passageway, another conduit coupled to another gas passageway, and both gas passageways circumvent the expanding channel. Each of the passageways has a plurality of inlets extending into the expanding channel and the inlets are positioned to provide a circular gas flow through the expanding channel.
摘要翻译：本发明的实施例涉及在原子层沉积工艺期间在衬底上沉积材料的装置和方法。在一个实施例中，提供了一种用于处理衬底的腔室，其包括腔室盖组件，该室盖组件包含沿腔室盖组件的中心部分处的中心轴线延伸的扩张通道，以及从膨胀通道延伸到周边部分的锥形底面室盖组件。锥形底表面的形状和尺寸可以基本上覆盖基板接收表面。腔室盖组件还包括连接到气体通道的导管，另一导管与另一个气体通道连接，两个气体通道绕过扩张通道。每个通道具有延伸到扩张通道中的多个入口，并且入口被定位成提供通过膨胀通道的圆形气流。

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