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1. 发明授权

US09625820B2 Method of patterning a thin film 有权
公开(公告)号：US09625820B2
公开(公告)日：2017-04-18
申请号：US14732774
申请日：2015-06-07
申请人： NATIONAL TSING HUA UNIVERSITY
发明人： Arnold Chang-Mou Yang , Wei-Chun Chen
IPC分类号： G03F7/20
CPC分类号： G03F7/2043 , G03F7/20 , G03F7/2041
摘要： A method of patterning a thin film includes steps as follows. The thin film is formed. The thin film includes a plurality of first molecules, and each of the first molecules has a conjugated structure. A mask is covered on the thin film. The mask includes at least one exposing area, and the exposing area is correspondent to an illuminated region of the thin film. A solvent annealing and illuminating step is conducted, wherein the thin film covered by the mask is illuminated with a light source under an atmosphere of a first solvent, and a wavelength range of the light source is correspondent to an energy enabling the first molecules to reach an excited state. Thus a thickness of the illuminated region of the thin film is increased or decreased so as to form a pattern on the thin film.

2. 发明申请

US20160306279A1 METHOD OF PATTERNING A THIN FILM 有权
标题翻译：绘制薄膜的方法
公开(公告)号：US20160306279A1
公开(公告)日：2016-10-20
申请号：US14732774
申请日：2015-06-07
申请人： NATIONAL TSING HUA UNIVERSITY
发明人： Arnold Chang-Mou YANG , Wei-Chun CHEN
IPC分类号： G03F7/20
CPC分类号： G03F7/2043 , G03F7/20 , G03F7/2041
摘要： A method of patterning a thin film includes steps as follows. The thin film is formed. The thin film includes a plurality of first molecules, and each of the first molecules has a conjugated structure. A mask is covered on the thin film. The mask includes at least one exposing area, and the exposing area is correspondent to an illuminated region of the thin film. A solvent annealing and illuminating step is conducted, wherein the thin film covered by the mask is illuminated with a light source under an atmosphere of a first solvent, and a wavelength range of the light source is correspondent to an energy enabling the first molecules to reach an excited state. Thus a thickness of the illuminated region of the thin film is increased or decreased so as to form a pattern on the thin film.
摘要翻译：图案化薄膜的方法包括以下步骤。形成薄膜。薄膜包括多个第一分子，并且每个第一分子具有共轭结构。薄膜上覆盖着一个面具。掩模包括至少一个曝光区域，并且曝光区域对应于薄膜的照明区域。进行溶剂退火和照明步骤，其中在第一溶剂的气氛下用光源照射由掩模覆盖的薄膜，并且光源的波长范围对应于能够使第一分子达到的能量兴奋的状态。因此，薄膜的照射区域的厚度增加或减小，以便在薄膜上形成图案。

3. 发明申请

US20110293847A1 Particle-Beam Induced Processing Using Liquid Reactants 审中-公开
标题翻译：使用液体反应物的粒子束诱导处理
公开(公告)号：US20110293847A1
公开(公告)日：2011-12-01
申请号：US12789457
申请日：2010-05-28
申请人： Jeffrey Todd Hastings
发明人： Jeffrey Todd Hastings
IPC分类号： C23F17/00 , C23C14/14 , C23C14/06
CPC分类号： G03F7/2043 , C23C18/1204 , C23C18/1208 , C23C18/1245 , C23C18/125 , C23C18/1275 , C23C18/14 , C23C18/1612 , C23C18/1619 , C23C18/1642 , C23C18/1667 , C23C18/1682 , C23C18/1687 , C23C18/31 , C23C18/32 , C23C18/42 , C23C18/48 , H01J37/3002 , H01J37/301 , H01J37/3056 , H01J2237/2003 , H01J2237/31732 , H01J2237/3174 , H01J2237/31749 , H01L21/288 , H01L21/30604 , H01L21/30612 , H01L21/31111 , H01L21/32134
摘要： A system or method of charge particle beam induced materials processing is disclosed. A charged particle beam (electron or ion) is focused at the interface of a substrate and a bulk liquid. The beam induces a localized chemical reaction that results in deposition or etching of deterministic micro- or nano-scale structures. The bulk liquid reactants permit the deposition and etching of metals, semiconductors, and insulators. A charged particle transparent membrane separates the liquid reactant from the vacuum chamber in which the beam is transmitted. In many cases, bulk liquid reactants permit processing of materials with much higher purity that of the prior art and permit processing of materials previously unavailable in charged particle beam processes.
摘要翻译：公开了一种充电粒子束诱导材料处理的系统或方法。带电粒子束（电子或离子）聚焦在基底和大块液体的界面处。光束引起局部化学反应，导致确定性微尺度或纳米尺度结构的沉积或蚀刻。大量液体反应物允许金属，半导体和绝缘体的沉积和蚀刻。带电粒子透明膜将液体反应物与其中传输光束的真空室分离。在许多情况下，散装液体反应物允许加工具有现有技术的纯度高得多的材料，并允许加工先前在带电粒子束工艺中不可用的材料。

4. 发明授权

US07821616B2 Resist pattern forming method, semiconductor apparatus using said method, and exposure apparatus thereof 有权
标题翻译：抗蚀剂图案形成方法，使用该方法的半导体装置及其曝光装置
公开(公告)号：US07821616B2
公开(公告)日：2010-10-26
申请号：US12385064
申请日：2009-03-30
申请人： Shinichi Ito
发明人： Shinichi Ito
IPC分类号： G03B27/52 , G03B27/32 , G03D5/00
CPC分类号： G03F7/70341 , G03F7/2043 , G03F7/40 , H01L21/30
摘要： In immersion exposure, a resist pattern forming method suppressing resist pattern defects comprises mounting a substrate formed a resist film thereon and a reticle formed a pattern thereon onto an exposure apparatus, supplying a first chemical solution onto the resist film to selectively form a first liquid film in a local area on the resist film and draining the solution, the first liquid film having a flow and being formed between the resist film and a projection optical system, transferring the pattern of the reticle to the resist film through the first liquid film to form a latent image, supplying a second chemical solution onto the resist film to clean the resist film, heating the resist film, and developing the resist film to form a resist pattern from the resist film.
摘要翻译：在浸渍曝光中，抑制抗蚀剂图案缺陷的抗蚀剂图案形成方法包括将形成有抗蚀剂膜的基板和在其上形成图案的掩模版安装在曝光装置上，将第一化学溶液供应到抗蚀剂膜上以选择性地形成第一液膜在抗蚀剂膜上的局部区域中排出溶液，第一液膜具有流动并形成在抗蚀剂膜和投影光学系统之间，通过第一液膜将掩模版的图案转印到抗蚀剂膜上以形成潜像，将第二化学溶液供应到抗蚀剂膜上以清洁抗蚀剂膜，加热抗蚀剂膜，并且使抗蚀剂膜显影以从抗蚀剂膜形成抗蚀剂图案。

5. 发明申请

US20090190114A1 Resist pattern forming method, semiconductor apparatus using said method, and exposure apparatus thereof 有权
公开(公告)号：US20090190114A1
公开(公告)日：2009-07-30
申请号：US12385064
申请日：2009-03-30
申请人： Shinichi Ito
发明人： Shinichi Ito
IPC分类号： G03B27/42
CPC分类号： G03F7/70341 , G03F7/2043 , G03F7/40 , H01L21/30
摘要： In immersion exposure, a resist pattern forming method suppressing resist pattern defects comprises mounting a substrate formed a resist film thereon and a reticle formed a pattern thereon onto an exposure apparatus, supplying a first chemical solution onto the resist film to selectively form a first liquid film in a local area on the resist film and draining the solution, the first liquid film having a flow and being formed between the resist film and a projection optical system, transferring the pattern of the reticle to the resist film through the first liquid film to form a latent image, supplying a second chemical solution onto the resist film to clean the resist film, heating the resist film, and developing the resist film to form a resist pattern from the resist film.

6. 发明授权

US07468238B2 Maskless photolithography for using photoreactive agents 有权
公开(公告)号：US07468238B2
公开(公告)日：2008-12-23
申请号：US11297695
申请日：2005-12-08
申请人： David P. Fries
发明人： David P. Fries
IPC分类号： G03F7/20
CPC分类号： G03F7/2002 , G03F7/2043 , G03F7/70291
摘要： The present invention relates to maskless photolithography using a patterned light generator for creating 2-D and 3-D patterns on objects using photoreactive chemicals. In an embodiment, the patterned light generator uses a micromirror array to direct pattern light on a target object. In an alternate embodiment, the patterned light generator uses a plasma display device to generate and direct patterned light onto a target object. Specifically, the invention provides a maskless photolithography system and method for creating molecular imprinted array devices, integrated microsensors and fluidic networks on a substrate, integrated circuits of conducting polymers, and patterns on substrates using photochemical vapor deposition. For creating molecular imprinted array devices, the invention provides a system and method for applying a photoreactive reagent comprising photopolymer receptors and extractable target compounds, exposing the substrate to patterned light to activate the photopolymer to form molecular imprints of the target compounds corresponding to the pattern of incident light. For creating integrated circuits of conducting polymers, the invention provides a system and method for applying a photoreactive conducting polymer reagent to a substrate, exposing the substrate to patterned light to activate the photoreactive conducting polymer reagent to form integrated circuits corresponding to the circuit pattern of incident light. In an embodiment the substrate is a photoreactive conductive polymer. For creating integrated microsensors and fluidic networks on a substrate, the invention provides a system and method for applying a photoreactive sensor creating compound and a photoreactive fluid channel creating compound to a substrate, exposing the substrate to patterned light to activate the photoreactive compounds to form microsensor arrays and fluidic networks corresponding to the pattern of incident light. For creating patterns on substrates using photochemical vapor deposition, the invention provides a system and method for exposing a substrate to photoreactive gases and patterned light to deposit chemicals on the substrate corresponding to the pattern of incident light.

7. 发明授权

US06432317B1 Method to produce masking 失效
标题翻译：产生掩蔽的方法
公开(公告)号：US06432317B1
公开(公告)日：2002-08-13
申请号：US08286106
申请日：1994-08-04
申请人： Monte A. Douglas , Richard A. Stoltz
发明人： Monte A. Douglas , Richard A. Stoltz
IPC分类号： H01L213065
CPC分类号： B82Y30/00 , B82Y10/00 , C23C16/04 , G03C5/58 , G03F7/2043 , Y10S148/105 , Y10S438/945
摘要： This is a method for masking a structure 12 for patterning micron and submicron features, the method comprises: forming at least one monolayer 32 of adsorbed molecules on the structure; prenucleating portions 46,48 of the adsorbed layer by exposing the portions corresponding to a desired pattern 36 of an energy source 42; and selectively forming build-up layers 66,68 over the prenucleated portions to form a mask over the structure to be patterned. Other methods are also disclosed.
摘要翻译：这是用于掩蔽用于图案化微米和亚微米特征的结构12的方法，所述方法包括：在结构上形成吸附分子的至少一个单层32; 通过暴露对应于能量源42的期望图案36的部分，来吸附层的原核部分46,48; 并且在去核部分之上选择性地形成积层66,68以在待图案化的结构上形成掩模。还公开了其它方法。

8. 发明授权

US6156393A Method of molecular-scale pattern imprinting at surfaces 失效
标题翻译：表面分子尺度图案压印方法
公开(公告)号：US6156393A
公开(公告)日：2000-12-05
申请号：US967891
申请日：1997-11-12
申请人： John C. Polanyi , Duncan Rogers
发明人： John C. Polanyi , Duncan Rogers
IPC分类号： G03F1/00 , G01N13/12 , G03F7/00 , G03F7/004 , G03F7/20 , H01L21/027 , H01L21/205 , H01L21/225 , B05D3/06
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/004 , G03F7/2043 , G03F7/2059 , G03F7/2065 , H01L21/0277 , H01L21/2254
摘要： A method for mask-free molecular or atomic patterning of surfaces of reactive solids is disclosed. A molecular-scale pattern of adsorbate molecules is used in place of the conventional macroscopic "mask". Molecules adsorb at surfaces in patterns, governed by the structure of the surface, the chemical nature of the adsorbate, and the adsorbate coverage at the surface. The surface is patterned and then marked or imprinted with the pattern by inducing localized chemical reaction between adsorbate molecules and the surface of the solid, resulting in an imprint being formed in the vicinity of the adsorbate molecules. In one aspect of the invention, photoinduced reaction of the patterned adsorbate leads to patterned photoreaction with the surface. The photoreaction can take the form of patterned photoattachment to the surface (patterned "writing" or "doping") or patterned photoremoval of atoms from the surface ("etching" which takes place in the initial reaction or through subsequent photoirradiation of the photopatterned surface). The adsorbate when irradiated with light, electrons or ions imprints a pattern on the substrate by localised reaction. The new method is exemplified by the case of a silicon substrate and chlorobenzene molecules which first adsorb in a pattern on a silicon crystal, and which when irradiated chlorinate the crystal in a similar pattern to that of the adsorbate. The method is suitable for the writing, doping or etching of molecular-scale features.
摘要翻译：公开了一种用于无反应性固体表面的无掩模分子或原子图案化的方法。使用吸附物分子的分子规模图案代替常规的宏观“掩模”。分子以图案的表面吸附，由表面的结构，被吸附物的化学性质和表面的被吸附物覆盖所决定。表面被图案化，然后通过诱导被吸附物分子和固体表面之间的局部化学反应，以图案标记或印记，导致在吸附物质分子附近形成印记。在本发明的一个方面，图案化的吸附物的光诱导反应导致与表面的图案化光反应。光反应可以采取图案化的光致贴片形式（图案化的“书写”或“掺杂”）或从表面构图的原子光刻（在初始反应中发生的“蚀刻”或通过随后的光图案化表面的光照射）。当用光，电子或离子照射时，被吸附物通过局部反应印迹在基底上。新方法的例子是硅衬底和氯苯分子的情况，其首先以硅晶体的图案吸附，并且当被照射时以类似于被吸附物的图案的方式氯化晶体。该方法适用于分子规模特征的写入，掺杂或蚀刻。

9. 发明授权

US6071676A Method of deposition 失效
标题翻译：沉积方法
公开(公告)号：US6071676A
公开(公告)日：2000-06-06
申请号：US170346
申请日：1998-10-13
申请人： James Thomson , James Cairns
发明人： James Thomson , James Cairns
IPC分类号： C07F1/00 , C07F1/12 , C23C16/18 , G03F1/68 , G03F7/004 , G03F7/16 , G03F7/20 , H01L21/027 , H01L21/205 , H01L21/283 , H01L21/285 , G03C5/00
CPC分类号： H01L21/283 , C07F1/00 , C23C16/18 , G03F1/68 , G03F7/0042 , G03F7/16 , G03F7/2043
摘要： There is described a method of chemically depositing a substance. The method is of utility in the direct manufacture of integrated circuits and in the manufacture of a photomask for use in production of integrated circuits. The method involves the use of a compound which degrades into a deposit and a residue when a radiant beam (e.g. a laser beam) or a particle beam (e.g. an electron beam) is applied. The residue and any unreacted compound may be washed off the substrate to which it has been applied. Nanoscale dimensions of the deposit can be achieved. A particularly suitable organometallic compound is tetra-sec butyl diaurum difluoride.
摘要翻译：描述了一种化学沉积物质的方法。该方法在集成电路的直接制造和用于集成电路生产中的光掩模的制造中是有用的。当施加辐射束（例如激光束）或粒子束（例如电子束）时，该方法包括使用降解成沉积物的化合物和残余物。残余物和任何未反应的化合物可以从其已经被施用的基材上洗去。可以实现沉积物的纳米级尺寸。特别合适的有机金属化合物是四仲丁基二氟化二氟。

10. 发明授权

US5981001A Processing method for selectively irradiating a surface in presence of a reactive gas to cause etching 失效
标题翻译：在反应气体存在下选择性地照射表面以引起蚀刻的加工方法
公开(公告)号：US5981001A
公开(公告)日：1999-11-09
申请号：US429289
申请日：1995-04-25
申请人： Toshiyuki Komatsu , Yasue Sato , Shin-Ichi Kawate
发明人： Toshiyuki Komatsu , Yasue Sato , Shin-Ichi Kawate
IPC分类号： C23C16/04 , G03F1/00 , G03F7/00 , G03F7/004 , G03F7/20 , G03F7/26 , G03F7/36 , G03F7/38 , H01L21/02 , H01L21/033 , H01L21/285 , H01L21/308 , H01L21/311 , H01L21/316 , H01L21/32 , H01L21/321 , H01L21/3213 , B05D3/00 , C23C16/48
CPC分类号： H01L21/02071 , C23C16/047 , G03F1/68 , G03F7/2002 , G03F7/201 , G03F7/2022 , G03F7/2043 , G03F7/2053 , G03F7/265 , G03F7/36 , G03F7/38 , G03F7/7005 , G03F7/70841 , G03F7/70866 , G03F7/70875 , G03F7/70991 , H01L21/033 , H01L21/0332 , H01L21/0337 , H01L21/28556 , H01L21/28562 , H01L21/3086 , H01L21/31116 , H01L21/31144 , H01L21/31662 , H01L21/31683 , H01L21/32 , H01L21/321 , H01L21/32139 , G03F7/00 , G03F7/0035 , G03F7/0042
摘要： A processing method comprises:a first step of depositing on a substrate which is a specimen a film of any one of a semiconductor, a metal and an insulator;a second step of subjecting the surface of the film deposited in the first step, to irradiation with a beam having a given energy to produce a physical damage on the surface;a third step of subjecting the film surface on which the physical damage is produced in the second step, to selective irradiation with light to partially cause a photochemical reaction so that a mask pattern depending on the desired device structure is formed on the film surface; anda fourth step of carrying out photoetching using as a shielding member the mask pattern formed in the third step.
摘要翻译：一种处理方法，包括：第一步，在半导体，金属和绝缘体中的任一个的膜上沉积作为样本的基板; 在第一步骤中沉积的膜的表面经受具有给定能量的束照射以在表面上产生物理损伤的第二步骤; 在第二步骤中对产生物理损伤的膜表面进行第三步的选择性照射以部分地引起光化学反应，使得在膜表面上形成根据期望的器件结构的掩模图案; 以及第四步骤，使用在第三步骤中形成的掩模图案作为屏蔽构件进行光刻。

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