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1. 发明申请

US20080193882A1 PATTERN FORMATION METHOD 有权
标题翻译：模式形成方法
公开(公告)号：US20080193882A1
公开(公告)日：2008-08-14
申请号：US11958661
申请日：2007-12-18
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/20
CPC分类号： G03F7/0035 , G03F7/2041
摘要： After forming a lower layer film, an intermediate layer film and a first resist film on a substrate, a first resist pattern is formed by performing first exposure. Then, after a first intermediate layer pattern is formed by transferring the first resist pattern onto the intermediate layer film, a second resist film is formed thereon, and a second resist pattern is formed by performing second exposure. Thereafter, a second intermediate layer pattern is formed by transferring the second resist pattern onto the intermediate layer film. After removing the second resist film, the lower layer film is etched by using the second intermediate layer pattern as a mask, so as to form a lower layer pattern.
摘要翻译：在基板上形成下层膜，中间层膜和第一抗蚀剂膜之后，通过进行第一曝光来形成第一抗蚀剂图案。然后，在通过将第一抗蚀剂图案转印到中间层膜上形成第一中间层图案之后，在其上形成第二抗蚀剂膜，并通过进行第二曝光形成第二抗蚀剂图案。此后，通过将第二抗蚀剂图案转印到中间层膜上来形成第二中间层图案。在除去第二抗蚀剂膜之后，通过使用第二中间层图案作为掩模来蚀刻下层膜，以形成下层图案。

2. 发明授权

US07338743B2 Resist material and pattern formation method 有权
标题翻译：抗蚀材料和图案形成方法
公开(公告)号：US07338743B2
公开(公告)日：2008-03-04
申请号：US11197296
申请日：2005-08-05
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03C1/76 , G03C1/492 , G03C1/494 , G03C5/00
CPC分类号： G03F7/0392 , G03F7/0395 , G03F7/0397
摘要： A resist material includes a first polymer in which part of alkali-soluble groups are protected by an acid labile group labilized by an acid; a second polymer in which substantially all alkali-soluble groups are protected by an acid labile group labilized by an acid; and an acid generator.
摘要翻译：抗蚀剂材料包括第一聚合物，其中碱溶性基团的一部分被酸酸化的酸不稳定基团保护; 其中基本上所有的碱溶性基团都被被酸化的酸不稳定基团保护的第二聚合物; 和酸发生剂。

3. 发明授权

US07273820B2 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07273820B2
公开(公告)日：2007-09-25
申请号：US10399755
申请日：2001-10-09
申请人： Hideo Nakagawa , Masaru Sasago , Masayuki Endo , Yoshihiko Hirai
发明人： Hideo Nakagawa , Masaru Sasago , Masayuki Endo , Yoshihiko Hirai
IPC分类号： H01L21/469
CPC分类号： H01L21/76819 , H01L21/31051
摘要： After a fluid film is formed by supplying a material with fluidity to the surface of a substrate formed with a stepped layer, the fluid film is pressed against the substrate by a pressing member having a planar pressing surface so that the surface of the fluid film is planarized. The fluid film is heated in this state and thereby solidified to form a solidified film having a planar surface.
摘要翻译：在通过向形成有阶梯层的基板的表面供给流动性的材料形成流体膜之后，通过具有平面的按压面的按压部件将流体膜压在基板上，使得流体膜的表面为平面化在该状态下加热流体膜，由此固化，形成具有平坦表面的固化膜。

4. 发明申请

US20070082292A1 Water-soluble material, chemically amplified resist and pattern formation method using the same 审中-公开
标题翻译：水溶性材料，化学放大抗蚀剂和使用其的图案形成方法
公开(公告)号：US20070082292A1
公开(公告)日：2007-04-12
申请号：US11602377
申请日：2006-11-21
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03C1/00
CPC分类号： G03F7/11 , G03F7/0045 , G03F7/0392 , G03F7/095
摘要： A water-soluble material used for forming a water-soluble film on a chemically amplified resist film includes a water-soluble polymer, an acid generator and a compound constructing an inclusion compound for incorporating the acid generator. Also, in a pattern formation method, a chemically amplified resist film is formed on a substrate, and a water-soluble film made of a water-soluble material including a water-soluble polymer, an acid generator and a compound constructing an inclusion compound for incorporating the acid generator is formed on the resist film. Thereafter, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the water-soluble film, the resultant resist film is developed and the water-soluble film is removed. Thus, a resist pattern made of the resist film is formed.
摘要翻译：用于在化学放大抗蚀剂膜上形成水溶性膜的水溶性材料包括水溶性聚合物，酸产生剂和构成用于掺入酸产生剂的包合物的化合物。此外，在图案形成方法中，在基板上形成化学放大抗蚀剂膜，以及由水溶性材料构成的水溶性膜，所述水溶性物质包含水溶性聚合物，酸产生剂和构成包合物的化合物，在抗蚀剂膜上形成并入酸产生剂。此后，通过选择性地照射通过水溶性膜曝光光的抗蚀剂膜来进行图案曝光，使得到的抗蚀剂膜显影并除去水溶性膜。因此，形成由抗蚀剂膜制成的抗蚀剂图案。

5. 发明申请

US20070026341A1 Resist protective coating material and patterning process 有权
标题翻译：抵抗保护涂料和图案化过程
公开(公告)号：US20070026341A1
公开(公告)日：2007-02-01
申请号：US11492957
申请日：2006-07-26
申请人： Jun Hatakeyama , Yuji Harada , Yoshio Kawai , Masayuki Endo , Masaru Sasago , Haruhiko Komoriya , Michitaka Ootani , Satoru Miyazawa , Kazuhiko Maeda
发明人： Jun Hatakeyama , Yuji Harada , Yoshio Kawai , Masayuki Endo , Masaru Sasago , Haruhiko Komoriya , Michitaka Ootani , Satoru Miyazawa , Kazuhiko Maeda
IPC分类号： G03C1/00
CPC分类号： G03F7/11 , G03F7/0046 , G03F7/2041 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A resist protective coating material is provided comprising an α-trifluoromethylacrylic acid/norbornene copolymer having cyclic perfluoroalkyl groups as pendant. In a pattern-forming process, the material forms on a resist film a protective coating which is water-insoluble, dissolvable in alkaline developer and immiscible with the resist film, allowing for effective implementation of immersion lithography.
摘要翻译：提供抗蚀剂保护涂层材料，其包含具有环状全氟烷基的α-三氟甲基丙烯酸/降冰片烯共聚物作为侧基。在图案形成过程中，材料在抗蚀剂膜上形成保护性涂层，其是不溶于水的，可溶于碱性显影剂中并且与抗蚀剂膜不混溶，从而有效地实施浸渍光刻。

6. 发明授权

US07166418B2 Sulfonamide compound, polymer compound, resist material and pattern formation method 有权
公开(公告)号：US07166418B2
公开(公告)日：2007-01-23
申请号：US10932316
申请日：2004-09-02
申请人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
发明人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
IPC分类号： G03F7/30
CPC分类号： C08F220/18 , C08F212/02 , C08F228/02 , G03F7/0046 , G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/107 , Y10S430/108 , Y10S430/111
摘要： A base polymer of a resist material includes a unit represented by a general formula of the following Chemical Formula 3: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; and R5 and R6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group, a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid.

7. 发明申请

US20060281025A1 Chemically amplified resist material and pattern formation method using the same 有权
标题翻译：化学放大抗蚀剂材料和使用其的图案形成方法
公开(公告)号：US20060281025A1
公开(公告)日：2006-12-14
申请号：US11409207
申请日：2006-04-24
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03C1/00
CPC分类号： C08L59/00 , C08L2205/02 , G03F7/0392 , G03F7/2041 , Y10S430/106 , C08L2666/16
摘要： In a pattern formation method, a resist film made of a chemically amplified resist material including a first polymer having hemiacetal or hemiketal is formed on a substrate. Then, with a liquid provided on the resist film, pattern exposure is performed by selectively irradiating the resist film with exposing light. After the pattern exposure, the resist film is developed so as to form a resist pattern made of the resist film.
摘要翻译：在图案形成方法中，在基板上形成由包含半缩醛或半缩醛的第一聚合物的化学放大抗蚀剂材料制成的抗蚀剂膜。然后，通过设置在抗蚀剂膜上的液体，通过用曝光光选择性地照射抗蚀剂膜来进行图案曝光。在图案曝光之后，抗蚀剂膜被显影以形成由抗蚀剂膜制成的抗蚀剂图案。

8. 发明申请

US20060263719A1 Resist material and pattern formation method using the same 有权
标题翻译：抗蚀材料和图案形成方法使用它
公开(公告)号：US20060263719A1
公开(公告)日：2006-11-23
申请号：US11415158
申请日：2006-05-02
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03C1/00
CPC分类号： G03F7/085 , G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/12
摘要： A resist film made of a resist material including 4-pentanelactam, that is, hetero cyclic ketone, is formed on a substrate, and subsequently, pattern exposure is performed by irradiating the resist film with exposing light through a mask. Then, the resist film having been subjected to the pattern exposure is developed, thereby forming a resist pattern.
摘要翻译：在基板上形成由包含4-戊内酰胺的抗蚀剂材料（即杂环酮）制成的抗蚀剂膜，随后通过用掩模曝光光照射抗蚀剂膜来进行图案曝光。然后，对经过图案曝光的抗蚀剂膜进行显影，从而形成抗蚀剂图案。

9. 发明申请

US20060163198A1 Pattern formation method 有权
标题翻译：图案形成方法
公开(公告)号：US20060163198A1
公开(公告)日：2006-07-27
申请号：US11260385
申请日：2005-10-28
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： C23F1/00 , B44C1/22 , H01L21/302 , H01L21/461
CPC分类号： G03F7/0392 , G03F7/0382 , G03F7/0397 , G03F7/40
摘要： In a pattern formation method, a resist film including a lactone ring is formed on a substrate of silicon oxide. Then, pattern exposure is performed by selectively irradiating the resist film with exposing light, and the resist film is developed after the pattern exposure so as to form a resist pattern made of the resist film. Subsequently, the lactone ring included in the resist pattern is opened by exposing the resist pattern to an acrylic acid aqueous solution. Thereafter, with the resist pattern where the lactone ring has been opened used as a mask, the substrate is etched, so as to form a recess in a good shape.
摘要翻译：在图案形成方法中，在氧化硅的基板上形成包含内酯环的抗蚀剂膜。然后，通过用曝光来选择性地照射抗蚀剂膜来进行图案曝光，并且在图案曝光之后使抗蚀剂膜显影，以形成由抗蚀剂膜制成的抗蚀剂图案。随后，通过将抗蚀剂图案暴露于丙烯酸水溶液来打开包含在抗蚀剂图案中的内酯环。然后，利用其中已经打开内酯环的抗蚀剂图案作为掩模，蚀刻基板，以形成良好形状的凹部。

10. 发明授权

US06936401B2 Pattern formation material and pattern formation method 失效
标题翻译：图案形成材料和图案形成方法
公开(公告)号：US06936401B2
公开(公告)日：2005-08-30
申请号：US10610912
申请日：2003-07-02
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027 , G03C1/73
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/0392 , Y10S430/115 , Y10S430/12
摘要： The pattern formation material of this invention is a chemically amplified resist material including a polymer whose solubility in a developer is changed in the presence of an acid; an acid generator for generating an acid through irradiation with exposing light; and a base generator for generating a base through irradiation with the exposing light. The base generator is more photosensitive to longer band light of a wavelength longer than extreme UV than to extreme UV when irradiated, as the exposing light, with the extreme UV and the longer band light at equivalent exposure energy.
摘要翻译：本发明的图案形成材料是一种化学放大抗蚀剂材料，其包括在酸存在下在显影剂中的溶解度改变的聚合物; 用于通过照射曝光而产生酸的酸产生器; 以及用于通过照射曝光光而产生基底的基座发生器。基极发生器对于长于超过紫外线的波长的长波段的光线，比照射时的极端紫外线更为敏感，作为曝光光，具有极端的紫外线和较长波段的光线具有相等的曝光能量。

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