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    • 4. 发明授权
    • Current limiting device
    • 限流装置
    • US5614881A
    • 1997-03-25
    • US514076
    • 1995-08-11
    • Anil R. DuggalLionel M. LevinsonHarold J. PatchenLarry N. Lewis
    • Anil R. DuggalLionel M. LevinsonHarold J. PatchenLarry N. Lewis
    • H01C7/02H01C7/12H01H9/46H01H87/00H02H9/02H01C7/10
    • H01H9/465H01C7/027H01C7/12H02H9/026H01H2033/163
    • A current limiting device utilizing an electrically conductive composite material and an inhomogeneous distribution of resistance structure is disclosed. The inhomogeneous distribution is typically chosen so that at least one selected thin layer of the current limiting device has much higher resistance than the rest of the current limiting device. In the actual device, pressure is typically exerted on the composite material in a direction normal to the selected thin layer. During a short-circuit, it is believed that adiabatic resistive heating of this selected thin layer is followed by rapid thermal expansion which leads to either a partial or complete physical separation of the current limiting device at the selected thin layer which produces a higher over-all device resistance to electric current flow. Thus the current limiting device limits the flow of current through the short-circuited current path. When the short-circuit is cleared, the current limiting device regains its low resistance state allowing electrical current to flow normally. The current limiting of the present invention is reusable for many such short circuit conditions.
    • 公开了一种使用导电复合材料和电阻结构不均匀分布的限流装置。 通常选择不均匀分布,使得限流装置的至少一个选定的薄层比电流限制装置的其余部分具有高得多的电阻。 在实际的装置中,通常在垂直于所选薄层的方向上对复合材料施加压力。 在短路期间,相信该选择的薄层的绝热电阻加热之后是快速热膨胀,其导致在所选择的薄层处限流器件的部分或完全物理分离,其产生较高的过电压, 所有器件阻抗电流流动。 因此,限流装置限制了通过短路电流路径的电流流动。 当短路被清除时,限流装置恢复其低电阻状态,允许电流正常流动。 本发明的电流限制对于许多这样的短路条件是可重用的。
    • 5. 发明授权
    • Solid state thermal conversion of polycrystalline alumina to sapphire
using a seed crystal
    • 使用晶种将多晶氧化铝固体热转化为蓝宝石
    • US5549746A
    • 1996-08-27
    • US126628
    • 1993-09-24
    • Curtis E. ScottJack M. StrokLionel M. Levinson
    • Curtis E. ScottJack M. StrokLionel M. Levinson
    • C30B1/02C30B29/20C30B33/02
    • C30B1/02C30B29/20
    • A solid state seed crystal process for bulk conversion of a polycrystalline ceramic body to a single crystal body (of the same chemical composition) having the same crystal orientation as the seed crystal. The process comprises heating said body to form a monolithic join between the body and the seed crystal, heating the joined structure to reduce grain growth inhibitors and further heating the joined structure above the minimum temperature required for crystallite growth of the crystalline material, but not hot enough to melt and distort the original shape of the polycrystalline ceramic body during its conversion to a single crystal. This process has been used to convert polycrystalline alumina (PCA) bodies to sapphire having the same crystal orientation as the seed crystal by heating the PCA body, monolithically joined to a sapphire seed crystal, at a temperature above 1700.degree. C. without melting the body.
    • 用于将多晶陶瓷体大量转化成具有与晶种相同的晶体取向的单晶体(相同的化学组成)的固态晶种方法。 该方法包括加热所述主体以在主体和晶种之间形成整体连接,加热接合的结构以减少晶粒生长抑制剂并进一步加热接合结构高于结晶材料微晶生长所需的最低温度,但不热 足以熔化和扭曲多晶陶瓷体在其转变成单晶时的原始形状。 已经使用该方法将多晶氧化铝(PCA)体转变为具有与晶种相同的晶体取向的蓝宝石,通过加热在1700℃以上的温度下单体连接到蓝宝石晶种的PCA体,而不熔化本体 。
    • 6. 发明授权
    • Conversion of polycrystalline material to single crystal material using
bodies having a selected surface topography
    • 使用具有选定表面形貌的主体将多晶材料转化为单晶材料
    • US5540182A
    • 1996-07-30
    • US126830
    • 1993-09-24
    • Lionel M. LevinsonCurtis E. Scott
    • Lionel M. LevinsonCurtis E. Scott
    • C30B1/02C30B1/00C30B29/20
    • C30B1/00C30B29/20
    • A solid step process for convening a polycrystalline body to a single crystal body includes the steps of forming a selected surface topography on the body and then heating the body at a temperature below its melting temperature for a time sufficient to substantially convert the polycrystalline material to single crystal material. The surface topography includes depressions or protrusions from the body having sidewalls of the polycrystalline material that are disposed to intersect one another at junctions forming relatively sharp corners, and the dimensions of the sidewalls are greater than the average grain size of the polycrystalline material. Typically alumina is the polycrystalline material and surface features include grooves or the like. The patterned alumina body with the selected surface topography is heated to a temperature between 1800.degree. and 2000.degree. C. in one or more cycles to convert the polycrystalline alumina to sapphire.
    • 用于将多晶体聚合到单晶体的固体步骤包括以下步骤:在体上形成所选择的表面形貌,然后在低于其熔融温度的温度下加热体,所述时间足以将多晶材料基本上转化为单 水晶材料。 表面形貌包括来自具有多晶材料侧壁的主体的凹陷或突起,所述侧壁设置成在形成相对尖锐的拐角处的接合处彼此相交,并且侧壁的尺寸大于多晶材料的平均晶粒尺寸。 通常,氧化铝是多晶材料,表面特征包括凹槽等。 将具有所选表面形貌的图案化氧化铝体在一个或多个循环中加热至1800℃至2000℃的温度以将多晶氧化铝转化为蓝宝石。